Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “wafer”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,351 records · Page 75
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

Cross-sectional examination of the damage zone in impacted specimens of carbon/epoxy and carbon/PEEK composites

Drop weight impact testing was utilized to inflict damage on eight-ply bidirectional and unidirectional samples of carbon/epoxy and carbon/PEEK (polyetheretherketone) test specimens with impact energies ranging from 0.80 J to 1.76 J. The impacting tip was of a smaller diameter (4.2-mm) than those used in most previous studies, and the specimens were placed with a diamond wheel wafering saw through the impacted area perpendicular to the outer fibers. Photographs at 12 x magnification were taken of these cross-sections and examined. The results on the bidirectional samples show little damage until 1.13 J, at which point delaminations were seen in the epoxy specimens. The PEEK specimens showed less delamination than the epoxy specimens for a given impact energy level. The unidirectional specimens displayed more damage than the bidirectional samples for a given impact energy, with the PEEK specimens showing much less damage than the epoxy material.

Nettles, A. T.↗
NASA NTRS1989

Germanium Blocked Impurity Band (BIB) detectors

Information is given in viewgraph form. The advantages of the Si blocked impurity band (BIB) detector invented by M. D. Petroff and M. G. Stabelbroek are noted: smaller detection volume leading to a reduction of cosmic ray interference, extended wavelength response because of dopant wavefunction overlap, and photoconductive gain of unity. It is argued that the stated advantages of Si BIB detectors should be realizable for Ge BIB detectors. Information is given on detector development, subtrate choice and preparation, wafer polising, epitaxy, characterization of epi layers, and preliminary Ge BIB detector test results.

Haller, E. E.↗
NASA NTRS1989

Flight worthy infrared bolometers with high throughput and low NEP

This paper describes the features of flight-worthy IR bolometers that were developed to meet the requirements of the Far Infrared Absolute Spectrometer (FIRAS) and the Diffuse Infrared Background Experiment (DIRBE) on the Cosmic Background Explorer of a short time constant, high throughput, and low noise equivalent power (NEP). The new bolometers use small chips of doped and compensated silicon as sensing elements, and diamond wafers coated with thin layers of Cr and Au as the absorbing substrate. The throughput values for the FIRAS bolometers and for DIRBE are 1.28 sr-sq cm, and 0.21 sr-sq cm, respectively. At 1.6, the time constants range from 3 to 40 ms, and their NEP range from 4 x 10 to the -15th to 1 x 10 to the -14th W/sq rt of Hz.

Serlemitsos, Aristides T.↗
NASA NTRS1989

Low-cost DH and quantum well laser array development

The intial results of a program aimed at developing low-cost diode laser arrays for use as solid-state laser pumps are reported. MOCVD is used to demonstrate excellent run-to-run reproducibility in emission wavelength, threshold current density, and quantum efficiency. For this first experimental series, J(th) values of approximately 1310 Amps/sq cm were obtained for broad-area unthinned devices from the growth runs. Differential quantum efficiencies of between 41 percent and 47 percent were measured on the non-facet-coated devices from all four runs. Single quantum well, separate confinement heterostructure lasers fabricated from wafers grown in the same MOCVD reactor exhibited near single-mode emission, with J(th) values of approximately 300 Amps/sq cm. Photoluminescence data confirm quantum well widths of 80 A and 150 A for two different MOCVD growth runs.

Linden, Kurt J.↗
NASA NTRS1990

Columnar growth of CoSi2 on Si(111), Si(100) and Si(110) by molecular beam epitaxy

Codeposition of silicon and cobalt on heated silicon substrates in ratios several times the silicide stoichiometry is found to result in epitaxial columns of CoSi2 surrounded by a matrix of epitaxial silicon. For (111)-oriented wafers, nearly cylindrical columns are formed, where both columns and surrounding silicon are defect free, as deduced from transmission electron microscopy. Independent control of the column diameter and separation is possible, and diameters of 27-135 nm have been demonstrated.

Fathauer, R. W.↗
NASA NTRS1989

Ballistic-electron-emission microscopy of subsurface defects at the Au-GaAs(100) interface

The application of ballistic-electron-emission microscopy (BEEM) to a study of the influence of GaAs(100) substrate conditions on the formation of a multidefect structure at the Au-GaAs(100) Schottky barrier interface is described. Interfaces prepared on both melt-grown GaAs(100) wafer substrates and MBF-deposited GaAs(100) buffer layers are considered. As a comparison to the study of Au-GaAs(100) interfaces, BEEM imaging is performed on Au-Si(100) interfaces. It is noted that Au-GaAs(100) interface formation is relatively insensitive to the effects of substrate surface condition and substrate bulk defect density, and that the combination of BEEM imaging and BEEM spectroscopy indicates that the heterogeneous interface defects are the result of diffusion between the Schottky barrier electrodes.

Hecht, M. H.↗
NASA NTRS1990

Single-ended output GaAs/AlGaAs single quantum well laser with a dry-etched corner reflector

GaAs/AlGaAs single quantum well lasers with integrated corner reflectors have been fabricated using chemically assisted ion beam etching. The air-GaAs interface is internally totally reflecting, and no coherent radiation is transmitted through the corner reflector. The corner reflector laser was compared with a conventional Fabry-Perot laser cleaved from the same wafer. An 11-percent reduction in threshold current and a reduction of the far-field angle from 4.4 deg to 0.7 deg was measured.

Hagberg, M.↗
NASA NTRS1991

Formation Of Ohmic Gold Contacts On Epitaxial GaAs

New low-temperature procedure used to deposit ohmic gold contacts on gallium arsenide epitaxial films, forming ohmic electrical contacts. Keeping wafer in vacuum until metallization prevents formation of rectifying contacts.

Hecht, Michael H.↗
NASA NTRS1991

Rapid Dry Etching Of Photoresists Without Toxic Gases

Experimental dry etching technique strips photoresists from semiconductor wafers without damaging semiconductor materials. Makes use of afterglow existing downstream from plasma generated by radio-frequency electric field. Constituents of afterglow react with sacrificial polymer to make reactive gases that quickly etch-away photoresist. Strips quickly at room temperature; not necessary to heat substrates. No hazardous or toxic chemicals used.

Lerner, Narcinda R.↗
NASA NTRS1991

Growing Cobalt Silicide Columns In Silicon

Codeposition by molecular-beam epitaxy yields variety of structures. Proposed fabrication process produces three-dimensional nanometer-sized structures on silicon wafers. Enables control of dimensions of metal and semiconductor epitaxial layers in three dimensions instead of usual single dimension (perpendicular to the plane of the substrate). Process used to make arrays of highly efficient infrared sensors, high-speed transistors, and quantum wires. For fabrication of electronic devices, both shapes and locations of columns controlled. One possible technique for doing this electron-beam lithography, see "Making Submicron CoSi2 Structures on Silicon Substrates" (NPO-17736).

Fathauer, Obert W.↗
NASA NTRS1990

Method of fabricating germanium and gallium arsenide devices

A method of semiconductor diode fabrication is disclosed which relies on the epitaxial growth of a precisely doped thickness layer of gallium arsenide or germanium on a semi-insulating or intrinsic substrate, respectively, of gallium arsenide or germanium by either molecular beam epitaxy (MBE) or by metal-organic chemical vapor deposition (MOCVD). The method involves: depositing a layer of doped or undoped silicon dioxide on a germanium or gallium arsenide wafer or substrate, selectively removing the silicon dioxide layer to define one or more surface regions for a device to be fabricated thereon, growing a matched epitaxial layer of doped germanium or gallium arsenide of an appropriate thickness using MBE or MOCVD techniques on both the silicon dioxide layer and the defined one or more regions; and etching the silicon dioxide and the epitaxial material on top of the silicon dioxide to leave a matched epitaxial layer of germanium or gallium arsenide on the germanium or gallium arsenide substrate, respectively, and upon which a field effect device can thereafter be formed.

Jhabvala, Murzban↗
NASA NTRS1990

HgCdTe for NASA EOS missions and detector uniformity benchmarks

Important NASA Earth Observing System (EOS) missions, Atmospheric Infrared Sounder (AIRS) and Moderate Resolution Imaging Spectrometer (MODIS-N), which require detector spectral response in the range of 14 to 17 microns at medium background flux levels and operation in the range of temperatures between 65 to 95 K, will be flown beginning in the next few years. Currently, a prime candidate detector technology for these missions is trapping-mode photoconductive HgCdTe devices. These devices can be tailored to the exact cutoff wavelengths required by those missions, and thus offer the performance advantages of an intrinsic detector which is ideally matched to the mission wavelength. Under the long wavelength-background-temperature conditions of these EOS missions, any detector will at best be thermal generation-recombination noise limited. Photoconductive devices are generally preferred under these circumstances, since at elevated temperatures their performance degrades with n(sub i) while for photovoltaic detectors performance degrades as n sub i(exp 2) n sub i is the intrinsic carrier concentration which is a function of alloy composition and temperature, but not doping. Very high performance trapping-mode photoconductive HgCdTe detectors have been developed which can be reproducibly fabricated. Detectivity (D asterisk) at 80K and 16 micron cutoff wavelength in excess of 10(exp 11) Jones has been measured for these devices. Power dissipation is at least two orders of magnitude less than conventional HgCdTe photoconductors - on the order of 0.12 W/cm(exp 2) compared with 12 W/cm(exp 2). EOS missions define thermal noise limited conditions for the long wavelength operating bands. Trapping-mode photoconductive HgCdTe detectors are linear under such conditions and responsivity is independent of background flux. At lower temperatures or high flux conditions in which background flux limits detector performance, trapping-mode detectors have a responsivity which varies with background flux. Internal calibration must be provided for radiometric measurements under the latter conditions (not an EOS mission concern). Liquid phase epitaxy is used to grow these HgCdTe device structures. This technique has been shown to give control of the cutoff wavelength on the order of 16 plus or minus 1 micron or less, both from run to run and across wafer dimensions of several centimeters on a side.

Norton, Paul R.↗
NASA NTRS1990

Method and apparatus for determining time, direction, and composition of impacting space particles

A space particle collector for recording the time specific particles are captured, and its direction at the time of capture, utilizes an array of targets, each comprised of an MOS capacitor on a chip charged from an external source and discharged upon impact by a particle through a tab on the chip that serves as a fuse. Any impacting particle creates a crater, but only the first will cause a discharge of the capacitor. A substantial part of the metal film around the first crater is burned off by the discharge current. The time of the impulse which burns the tab, and the identification of the target, is recorded together with data from flight instruments. The metal film is partitioned into pie sections to provide a plurality of targets on each of an array of silicon wafers, thus increasing the total number of identified particles that can be collected. It is thus certain which particles were captured at what specific times.

Kinard, William H.↗
NASA NTRS1990

Surface modification using low energy ground state ion beams

A method of effecting modifications at the surfaces of materials using low energy ion beams of known quantum state, purity, flux, and energy is presented. The ion beam is obtained by bombarding ion-generating molecules with electrons which are also at low energy. The electrons used to bombard the ion generating molecules are separated from the ions thus obtained and the ion beam is directed at the material surface to be modified. Depending on the type of ion generating molecules used, different ions can be obtained for different types of surface modifications such as oxidation and diamond film formation. One area of application is in the manufacture of semiconductor devices from semiconductor wafers.

Chutjian, Ara↗
NASA NTRS1991

Silicon carbide, a semiconductor for space power electronics

After many years of promise as a high temperature semiconductor, silicon carbide (SiC) is finally emerging as a useful electronic material. Recent significant progress that has led to this emergence has been in the areas of crystal growth and device fabrication technology. High quality single-crystal SiC wafers, up to 25 mm in diameter, can now be produced routinely from boules grown by a high temperature (2700 K) sublimation process. Device fabrication processes, including chemical vapor deposition (CVD), in situ doping during CVD, reactive ion etching, oxidation, metallization, etc. have been used to fabricate p-n junction diodes and MOSFETs. The diode was operated to 870 K and the MOSFET to 770 K.

Powell, J. Anthony↗
NASA NTRS1991

Progress toward the development of dual junction GaAs/Ge solar cells

Large area GaAs/Ge cells offer substantial promise for increasing the power output from existing silicon solar array designs and for providing an enabled technology for missions hitherto impossible using silicon. Single junction GaAs/Ge cells offer substantial advantages in both size, weight, and cost compared to GaAs cells but the efficiency is limited to approximately 19.2 to 20 percent AMO. The thermal absorptance of GaAs/Ge cells is also worse than GaAs/GaAs cells (0.88 vs 0.81 typ.) due to the absorption in the Ge substrate. On the other hand dual junction GaAs/Ge cells offer efficiencies up to ultimately 24 percent AMO in sizes up to 8 x 8 cm but there are still technological issues remaining to achieve current matching in the GaAs and Ge cells. This can be achieved through tuned antireflection (AR) coatings, improved quality of the GaAs growth, improved quality Ge wafers and the use of a Back Surface Field (BSF)/Back Surface Reflector (BSR) in the Ge cell. Although the temperature coefficients of efficiency and voltage are higher for dual junction GaAs/Ge cells, it has been shown elsewhere that for typical 28 C cell efficiencies of 22 percent (dual junction) vs 18.5 percent (single junction) there is a positive power tradeoff up to temperatures as high as 120 C. Due to the potential ease of fabrication of GaAs/Ge dual junction cells there is likely to be only a small cost differential compared to single junction cells.

Lillington, D. R.↗
NASA NTRS1991

Tandem concentrator solar cells with 30 percent (AMO) power conversion efficiency

Very high efficiency concentrator solar panels are envisioned as economical and reliable electrical power subsystems for space based platforms of the future. GaAs concentrator cells with very high efficiencies and good sub-bandgap transmissions can be fabricated on standard wafers. GaSb booster cell development is progressing very well; performance characteristics are still improving dramatically. Consistent GaAs/GaSb stacked cell AMO efficiencies greater than 30 percent are expected.

Avery, J. E.↗
NASA NTRS1991

High temperature NASP engine seal development

Key to the development of advanced hypersonic engines such as those being considered for the National Aerospace Plane (NASP) is the development and evaluation of high temperature, flexible seals that must seal the many feet of gaps between the articulating and stationary engine panels. Recent seal progress made at NASA-Lewis is reviewed in the areas of seal concept maturation, test rig development, and performance tests. A test fixture was built at NASA capable of subjecting candidate 3 ft long seals to engine simulated temperatures (up to 1500 F), pressures (up to 100 psi), and engine wall distortions (up to 0.15 in only 18 in span). Leakage performance test results at high temperatures are presented for an innovative high temperature, flexible ceramic wafer seal. Also described is a joint Pratt and Whitney/NASA planned test program to evaluate thermal performance of a braided rope seal under engine simulated heat flux rates (up to 400 Btu/sq ft s), and supersonic flow conditions. These conditions are produced by subjecting the seal specimen to hydrogen oxygen rocket exhaust that flows tangent to the specimen.

Steinetz, Bruce M.↗