Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “switches”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,351 records · Page 75

Differential Processing of Low and High LET Radiation Induced DNA Damage: Investigation of Switch from ATM to ATR Signaling

The members of the phosphatidylinositol kinase-like kinase family of proteins namely ataxia-telangiectasia mutated (ATM) and ATM- and Rad3-related (ATR) are directly responsible for the maintenance of genomic integrity by mounting DDR through signaling and facilitating the recruitment of repair factors at the sites of DNA damage along with coordinating the deployment of cell cycle checkpoints to permit repair by phosphorylating Checkpoint kinase Chk1, Chk2 and p53. High LET radiation from GCR (Galactic Cosmic Rays) consisting mainly of protons and high energy and charged (HZE) particles from SPE (Solar Particle Event) pose a major health risk for astronauts on their space flight missions. The determination of these risks and the design of potential safeguards require sound knowledge of the biological consequences of lesion induction and the capability of the cells to counter them. We here strive to determine the coordination of ATM and ATR kinases at the break sites directly affecting checkpoint signaling and DNA repair and whether differential processing of breaks induced by low and high LET radiation leads to possible augmentation of swap of these damage sensors at the sites of DNA damage. Exposure of cells to IR triggers rapid autophosphorylation of serine-1981 that causes dimer dissociation and initiates monomer formation of ATM. ATM kinase activity depends on the disruption of the dimer, which allows access and phosphorylation of downstream ATM substrates like Chk2. Evidence suggests that ATM is activated by the alterations in higher-order chromatin structure although direct binding of ATM to DSB ends may be a crucial step in its activation. On the other hand, in case of ATR, RPA (replication protein A)-coated ssDNA (single-stranded DNA) generated as a result of stalled DNA replication or during processing of chromosomal lesions is crucial for the localization of ATR to sites of DNA damage in association with ATR-interacting protein (ATRIP). Although the majority of RPA-coated ssDNA is generally present only during DNA replication, ATR activation in G1 and G2-phase might still require formation of RPA-coated ssDNA, probably initiated by the MRN-CtIP complex and then extended by the Exo1- or BLM-dependent mechanisms at the sites of DSBs. Evidence accumulates that activation of ATM and ATR are oppositely regulated by the length of single stranded overhangs generated at the break sites by processes mentioned above and these stretches of single stranded overhangs hold the clue for ATM to ATR switch at broken DNA ends. We irradiated 82-6hTERT human fibroblast cells with low LET gamma-rays and high LET Fe and Si particles. Preliminary results with cells exposed to 1Gy gamma-rays show that the kinetics of pChk2-pT68 foci formation is comparable to that of gamma-H2AX although they appear to recede quicker. The number and intensity of observed foci reaches a maximum at 30 min and 60 min post IR for Chk2-pT68 and gamma-H2AX foci respectively and all Chk2-pT68 foci colocalize with gamma-H2AX foci. The kinetics of Chk1-pS345 and ATRIP are being determined. Results of Chk2-pT68 foci kinetics was also corroborated by western blot experiments, although phosphorylation was detected as early as 10 min and started receding 30 min post IR with 2Gy of gamma-rays. On the other hand, level of ATR-pS428 reached its maximum between 60 and 120 min and was maintained until the last measured time point of 4 hours post IR as determined by western blotting. Experiments performed with high LET Fe and Si particles will be reported.

Saha, Janapriya↗

Pseudorandom Switching for Adding Radar to the AFF Sensor

A document describes the proposed addition of a radar function to the Autonomous Formation Flying Sensor, making possible coarse relative-position control to prevent collisions in the event of failure of one of the spacecraft. According to the proposal, in addition to tracking GPS-like one-way ranging signals transmitted by the other normally functioning spacecraft, each spacecraft could simultaneously track the reflection of its own ranging signal from a disabled, non-transmitting spacecraft. From the round-trip travel time, the approximate distance to the disabled spacecraft could be estimated. To prevent jamming of the receiver by the transmitter on the same spacecraft, the receiver would be switched off during transmission.

Tien, Jeffrey↗

Passively Q-switched side pumped monolithic ring laser

Disclosed herein are systems and methods for generating a side-pumped passively Q-switched non-planar ring oscillator. The method introduces a laser into a cavity of a crystal, the cavity having a round-trip path formed by a reflection at a dielectrically coated front surface, a first internal reflection at a first side surface of the crystal at a non-orthogonal angle with the front, a second internal reflection at a top surface of the crystal, and a third internal reflection at a second side surface of the crystal at a non-orthogonal angle with the front. The method side pumps the laser at the top or bottom surface with a side pump diode array beam and generates an output laser emanating at a location on the front surface. The design can include additional internal reflections to increase interaction with the side pump. Waste heat may be removed by mounting the crystal to a heatsink.

Li, Steven X.↗

A Nanostructured Composites Thermal Switch Controls Internal and External Short Circuit in Lithium Ion Batteries

A document discusses a thin layer of composite material, made from nano scale particles of nickel and Teflon, placed within a battery cell as a layer within the anode and/or the cathode. There it conducts electrons at room temperature, then switches to an insulator at an elevated temperature to prevent thermal runaway caused by internal short circuits. The material layer controls excess currents from metal-to-metal or metal-to-carbon shorts that might result from cell crush or a manufacturing defect

McDonald, Robert C.↗

Graphene Based Reversible Nano-Switch/Sensor Schottky Diode (NANOSSSD) Device

A nanostructure device is provided and performs dual functions as a nano-switching/sensing device. The nanostructure device includes a doped semiconducting substrate, an insulating layer disposed on the doped semiconducting substrate, an electrode formed on the insulating layer, and at least one layer of graphene formed on the electrode. The at least one layer of graphene provides an electrical connection between the electrode and the substrate and is the electroactive element in the device.

Miranda, Felix A.↗

Switched Systems and Motion Coordination: Combinatorial Challenges

Problems of routing commercial air traffic in a terminal airspace encounter different constraints: separation assurance, aircraft performance limitations, regulations. The general setting of these problems is that of a switched control system. Such a system combines the differentiable motion of the aircraft with the combinatorial choices of choosing precedence when traffic routes merge and choosing branches when the routes diverge. This presentation gives an overview of the problem, the ATM context, related literature, and directions for future research.

terminal airspace↗

Total Ionizing Dose Test of Microsemi's Silicon Switching Transistors JANTXV2N2222AUB and 2N2907AUB

Microsemi's silicon switching transistors, JANTXV2N2222AUB and 2N2907AUB, were tested for total ionizing dose (TID) response beginning on July 11, 2016. This test served as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) could be determined.

total ionizing dose (TID)↗

Polymer Nanofiber Based Reversible Nano-Switch/Sensor Diode (Nanosssd) Device

A nanostructure device is provided and performs dual functions as a nano-switching/sensing device. The nanostructure device includes a doped semiconducting substrate, an insulating layer disposed on the doped semiconducting substrate, an electrode formed on the insulating layer, and at least one polymer nanofiber deposited on the electrode. The at least one polymer nanofiber provides an electrical connection between the electrode and the substrate and is the electroactive element in the device.

Miranda, Felix A.↗

Evaluation of Fast Switching Diode 1N4448 Over a Wide Temperature Range

Electronic parts used in the design of power systems geared for space applications are often exposed to extreme temperatures and thermal cycling. Limited data exist on the performance and reliability of commercial-off-the-shelf (COTS) electronic parts at temperatures beyond the manufacturers specified operating temperature range. This report summarizes preliminary results obtained on the evaluation of automotive-grade, fast switching diodes over a wide temperature range and thermal cycling. The investigations were carried out to establish a baseline on functionality of these diodes and to determine suitability for use outside their recommended temperature limits.

Thermal Cycling↗

Polymer Nanofiber Based Reversible Nano-Switch/Sensor Schottky Diode (Nanosssd) Device

A nanostructure device is provided and performs dual functions as a nano-switching/sensing device. The nanostructure device includes a doped semiconducting substrate, an insulating layer disposed on the doped semiconducting substrate, an electrode formed on the insulating layer, and at least one polymer nanofiber deposited on the electrode. The at least one polymer nanofiber provides an electrical connection between the electrode and the substrate and is the electroactive element in the device.

Miranda, Felix A.↗

Total Ionizing Dose Test of Silicon Switching Transistors JANTXV2N2222AUB

Semicoa's silicon switching transistors, JANTXV2N2222AUB was tested for total ionizing dose (TID) response beginning on November 4, 2019. This test served as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) could be determined.

Campola, M.↗

Terminal Area Size and Switching Technique Analysis for Unmanned Aircraft Systems Operations

Unmanned Aircraft Systems (UAS) need to be able to comply with the Code of Federal Regulations Part 91 ‘see and avoid’ requirement. Detect and avoid (DAA) is an essential enabler for integrating UAS into the National Airspace System. A DAA system is a suite of sensors, trackers, and alerting and guidance algorithms that assists a remote pilot in maintaining separation from airborne traffic. Previous works have focused on operations transiting to and from Class A or special use airspace. More recent efforts have defined DAA system requirements for operations in and around the airport terminal environment. In continuation of this effort, this paper defines the DAA Terminal Area (DTA) size and switching technique for the DAA Well Clear (DWC) volume while transitioning between en route and the terminal area.

Unmanned Aircraft Systems↗

MIRO calibration switch mechanism

The Jet Propulsion Laboratory has design, analyzed, built, and tested a calibration switch mechanism for the MIRO instrument on the ROSETTA spacecraft. MIRO is the Microwave Instrument for the Rosetta Orbiter; this instrument hopes to investigate the origin of the solar system by studying the origin of comets. Specifically, the instrument will be the first to use submillimeter and millimeter wave heterodyne receivers to remotely examine the P-54 Wirtanen comet. In order to calibrate the instrument, it needs to view a hot and cold target. The purpose of the mechanism is to divert the instrument’s field of view from the hot target, to the cold target, and then back into space. This cycle is to be repeated every 30 minutes for the duration of the 1.5 year mission. The paper hopes to explain the development of the mechanism, as well as analysis and testing techniques.

Kubo, Holly↗

Observation of Single-Event Burnout During Inductive Switching

1A power MOSFET demonstrated destructive Single-Event Effect (SEE) during ion irradiation in a switching circuit. Further investigation showed that the inductive load causing a spike in the drain-to-source voltage (VDS) that exceeded the manufacturer’s rating for several nanoseconds was enough to allow SEB. These results indicate that SEB may occur in a very short window and flyback is critical for disciplined power supply design.

Menke, Rob↗