Formation of ncl-Si in the Amorphous Matrix a-SiO{sub x}:H Located near the Anode and on the Cathode, Using a Time-Modulated DC Plasma with the (SiH{sub 4}–Ar–O{sub 2}) Gas Phase (C{sub O{sub 2}} = 21.5 mol %)
The formation of ncl-Si in the amorphous matrix a-SiO{sub x}:H using a time-modulated DC plasma at an elevated oxygen content of C{sub O{sub 2}} = 21.5 mol % in a gas mixture of (SiH{sub 4}–Ar–O{sub 2}) is investigated. Plasma modulation implies the repeated (n = 180) switching on (for t{sub on} = 5, 10, 15 s) and switching off (for t{sub off} = 5, 10, 15 s) of the magnet coil of the DC magnetron. The effect of self-induction is used to enhance the processes of SiH{sub 4} dissociation, the formation of Si nanoparticles, and the ionization of oxygen and ncl-Si flows towards the electrodes. The samples are located both on an electrically isolated substrate holder near the anode and on the cathode (beyond its erosion zone). These experiments show that the shape of the dependences of the photoluminescence intensity I{sub PL}{sup ncl−Si} on the wavelength Λ are identical for all pairs of samples on the anode and cathode. When the t{sub on} value is small (t{sub on} = 5 s), the difference in the sample location only slightly affects the infrared (IR) spectra. At longer times t{sub on} (≥10 s) and a short time t{sub off} (5 s), the amorphous matrix located on the cathode is enriched with oxygen (as compared with that near the anode). The optimal plasma-modulation parameters are found to be t{sub off}/t{sub on} = 5, 10, 15/10 and t{sub off}/t{sub on} = 5, 10/15; under these conditions, the amorphous matrix has a “perfect structure” and is transparent to radiation, and the I{sub PL}{sup ncl−Si} value is the largest in the range λ ≈ 0.75–0.9 μm.