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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,351 records · Page 75
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

High Thermoelectric Power Factor and ZT in TbAs:InGaAs Epitaxial Nanocomposite Material

Lanthanide monopnictide (Ln-V) nanoparticles embedded within III–V semiconductors, specifically in In 0.53 Ga 0.47 As, are interesting for thermoelectric applications. The electrical conductivity, Seebeck coefficient, and power factor of co-deposited TbAs:InGaAs over the temperature range of 300–700 K are reported. Using Boltzmann transport theory, it is shown that TbAs nanoparticles in InGaAs matrix give rise to an improved Seebeck coefficient due to an increase in scattering, such as ionized impurity scattering. TbAs nanoparticles act as electron donors in the InGaAs matrix while having minimal effects on electron mobility, and maintain high electrical conductivity. There is further evidence that TbAs nanoparticles act as energy dependent electron scattering sites, contributing to an increased Seebeck coefficient at high temperature. These results show that TbAs:InGaAs nanocomposite thinfilms containing low concentrations, specifically 0.78% TbAs:InGaAs, display high electrical conductivity, reduced thermal conductivity, improved Seebeck coefficient, and demonstrated ZT of power factors as high as 7.1 × 10 -3 W K -2 m -1 and ZT as high as 1.6 at 650 K.

36 MATERIALS SCIENCE↗
DOE OSTI2025

AI‐Driven Robot Enables Synthesis‐Property Relation Prediction for Metal Halide Perovskites in Humid Atmosphere

Materials Acceleration Platforms (MAPs) – also known as self-driving laboratories– present a new paradigm for materials science and promise an order of magnitude accelerated materials discovery compared to the traditional trial-and-error approach. Metal halide perovskites (MHPs) are an emerging class of materials for optoelectronic applications but are plagued by irreproducible optoelectronic quality, particularly for films fabricated in a humid atmosphere. Here, in this work, a machine learning (ML)-guided closed-loop platform is developed with a multimodal data fusion approach to predict synthesis–property relations for the optical quality of MHP thin films in relative humidities (RHs) ranging from 5–55%. The efficiency of this approach is confirmed by the fast-dropping learning rate to 2% after experimentally sampling less than 1% of the possible 5,000+ combinations. The prediction of synthesis–property relations is done by optical and imaging characterizations. In situ photoluminescence characterization revealed the origin of thin film quality variation at different RH. These insights provide an avenue for controlling the MHP crystallization by fine-tuning the synthesis parameters and RH for a given chemistry, thus lifting the need for stringent atmosphere control. The MAP enables an accelerated screening and understanding of the synthesis design space, facilitating rational synthesis recipe choice for a wide range of materials.

AI-driven robot↗
DOE OSTI2018

Universal Scaling of Intrinsic Resistivity in Two-Dimensional Metallic Borophene

Two-dimensional boron sheets (borophenes) have been successfully synthesized in experiments and are expected to exhibit intriguing transport properties. A comprehensive first-principles study is reported of the intrinsic electrical resistivity of emerging borophene structures. The resistivity is highly dependent on different polymorphs and electron densities of borophene. Interestingly, a universal behavior of the intrinsic resistivity is well-described using the Bloch–Grüneisen model. In contrast to graphene and conventional metals, the intrinsic resistivity of borophenes can be easily tuned by adjusting carrier densities, while the Bloch–Grüneisen temperature is nearly fixed at 100 K. Finally, this work suggests that monolayer boron can serve as intriguing platform for realizing tunable two-dimensional electronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Free‐Standing α‐MoO 3 / Ti 3 C 2 MXene Hybrid Electrode in Water‐in‐Salt Electrolytes

While transition‐metal oxides such as α‐MoO 3 provide high capacity, their use is limited by modest electronic conductivity and electrochemical instability in aqueous electrolytes. Two‐dimensional (2D) MXenes, offer metallic conductivity, but their capacitance is limited in aqueous electrolytes. Insertion of partially solvated cations into Ti 3 C 2 MXene from lithium‐based water‐in‐salt (WIS) electrolytes enables charge storage at positive potentials, allowing a wider potential window and higher capacitance. Herein, we demonstrate that α‐MoO 3 /Ti 3 C 2 hybrids combine the high capacity of α‐MoO 3 and conductivity of Ti 3 C 2 in WIS (19.8 m LiCl) electrolyte in a wide 1.8 V voltage window. Cyclic voltammograms reveal multiple redox peaks from α‐MoO 3 in addition to the well‐separated peaks of Ti 3 C 2 in the hybrid electrode. This leads to a higher specific charge and a higher rate capability compared to a carbon and binder containing α‐MoO 3 electrode. These results demonstrate that the addition of MXene to less conductive oxides eliminates the need for conductive carbon additives and binders, leads to a larger amount of charge stored, and increases redox capacity at higher rates. In addition, MXene encapsulated α‐MoO 3 showed improved electrochemical stability, which was attributed to the suppressed dissolution of α‐MoO 3 . The work suggests that oxide/MXene hybrids are promising for energy storage.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Direct Synthesis of Layer-Tunable and Transfer-Free Graphene on Device-Compatible Substrates Using Ion Implantation Toward Versatile Applications

Direct synthesis of layer-tunable and transfer-free graphene on technologically important substrates is highly valued for various electronics and device applications. State of the art in the field is currently a two-step process: a high-quality graphene layer synthesis on metal substrate through chemical vapor deposition (CVD) followed by delicate layer transfer onto device-relevant substrates. Here, we report a novel synthesis approach combining ion implantation for a precise graphene layer control and dual-metal smart Janus substrate for a diffusion-limiting graphene formation to directly synthesize large area, high quality, and layer-tunable graphene films on arbitrary substrates without the post-synthesis layer transfer process. Carbon (C) ion implantation was performed on Cu–Ni film deposited on a variety of device-relevant substrates. A well-controlled number of layers of graphene, primarily monolayer and bilayer, is precisely controlled by the equivalent fluence of the implanted C-atoms (1 monolayer ~4 × 10 15 C-atoms/cm 2 ). Upon thermal annealing to promote Cu-Ni alloying, the pre-implanted C-atoms in the Ni layer are pushed toward the Ni/substrate interface by the top Cu layer due to the poor C-solubility in Cu. As a result, the expelled C-atoms precipitate into a graphene structure at the interface facilitated by the Cu-like alloy catalysis. After removing the alloyed Cu-like surface layer, the layer-tunable graphene on the desired substrate is directly realized. The layer-selectivity, high quality, and uniformity of the graphene films are not only confirmed with detailed characterizations using a suite of surface analysis techniques but more importantly are successfully demonstrated by the excellent properties and performance of several devices directly fabricated from these graphene films. Molecular dynamics (MD) simulations using the reactive force field (ReaxFF) were performed to elucidate the graphene formation mechanisms in this novel synthesis approach. With the wide use of ion implantation technology in the microelectronics industry, this novel graphene synthesis approach with precise layer-tunability and transfer-free processing has the promise to advance efficient graphene-device manufacturing and expedite their versatile applications in many fields.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Valence-band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics

We report valence band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. Degree of oxygen functionalization was controlled by annealing temperatures, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in density of states around the Fermi level upon thermal annealing at ~600 °C. The result indicates that while there is an apparent band gap for GO prior to a thermal reduction, the gap closes after an annealing around that temperature. This trend of band gap closure was correlated with electrical, chemical, and structural properties to determine a set of GO material properties that is optimal for optoelectronics. The results revealed that annealing at a temperature of ~500 °C leads to the desired properties, demonstrated by a uniform and an order of magnitude enhanced photocurrent map of an individual GO sheet compared to as-synthesized counterpart.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Germanium-Assisted Direct Growth of Graphene on Arbitrary Dielectric Substrates for Heating Devices

Direct growth of graphene on dielectric substrates is a prerequsite for the development of graphene-based electronic and optoelectronic devices. However, the current graphene synthesis directly on dielectric substrates always involves metal contamination problem, and the direct production of graphene patterns still remains unattainable and challenging. We propose herein a semiconducting Ge-assisted chemical vapor deposition approach to directly grow monolayer graphene on arbitrary dielectric substrates. By pre-patterning of catalytic Ge layer, the graphene with desired pattern can be achieved with extreme ease. Due to the catalysis of Ge, monolayer graphene is able to form on Ge covered dielectric substrates including SiO 2 /Si, quartz glass and sapphire substrates. Optimization of the process parameters leads to the complete sublimation of catalytic Ge layer during or immediately after monolayer graphene formation, thus resulting in direct deposition of large-area continuous graphene on dielectric substrates. The large-area, highly conductive graphene synthesized on transparent dielectric substrate using the proposed approach has exhibited wide applications, e.g., in defogger and in thermochromic displays, with both devices possessing excellent performances.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Combinatorial Growth of Vertically Aligned Nanocomposite Thin Films for Accelerated Exploration in Composition Variation

Combinatorial growth is capable of creating a compositional gradient for thin film materials and thus has been adopted to explore composition variation mostly for metallic alloy thin films and some dopant concentrations for ceramic thin films. This study uses a combinatorial pulsed laser deposition method to successfully fabricate two‐phase oxide–oxide vertically aligned nanocomposite (VAN) thin films of La 0.7 Sr 0.3 MnO 3 (LSMO)‐NiO with variable composition across the film area. The LSMO‐NiO compositional gradient across the film alters the two‐phase morphology of the VAN through varying nanopillar size and density. Additionally, the magnetic anisotropy and magnetoresistance properties of the nanocomposite thin films increase with increasing NiO composition. This demonstration of a combinatorial method for VAN growth can increase the efficiency of nanocomposite thin film research by allowing all possible compositions of thin film materials to be explored in a single deposition.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Determining elastic anisotropy of textured polycrystals using resonant ultrasound spectroscopy

Abstract Polycrystalline materials can have complex anisotropic properties depending on their crystallographic texture and crystal structure. In this study, we use resonant ultrasound spectroscopy (RUS) to nondestructively quantify the elastic anisotropy in extruded aluminum alloy 1100-O, an inherently low-anisotropy material. Further, we show that RUS can be used to indirectly provide a description of the material’s texture, which in the present case is found to be transversely isotropic. By determining the entire elastic tensor, we can identify the level and orientation of the anisotropy originated during extrusion. The relative anisotropy of the compressive (c 11 /c 33 ) and shear (c 44 /c 66 ) elastic constants is 1.5% ± 0.5% and 5.7% ± 0.5%, respectively, where the elastic constants (five independent elastic constants for transversely isotropic) are those associated with the extrusion axis that defines the symmetry of the texture. These results indicate that the texture is expected to have transversely isotropic symmetry. This finding is confirmed by two additional approaches. First, we confirm elastic constants and the degree of elastic anisotropy by direct sound velocity measurements using ultrasonic pulse echo. Second, neutron diffraction (ND) data confirm the symmetry of the bulk texture consistent with extrusion-induced anisotropy, and polycrystal elasticity simulations using the elastic self-consistent model with input from ND textures and aluminum single-crystal elastic constants render similar levels of polycrystal elastic anisotropy to those measured by RUS. We demonstrate the ability of RUS to detect texture-induced anisotropy in inherently low-anisotropy materials. Therefore, as many other common materials have intrinsically higher elastic anisotropy, this technique should be applicable for similar levels of texture, providing an efficient general diagnostic and characterization tool.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Using defects as a ‘fossil record’ to help interpret complex processes during additive manufacturing: as applied to raster-scanned electron beam powder bed additively manufactured Ti–6Al–4V

Abstract Defects in parts produced by additive manufacturing, instead of simply being perceived as deleterious, can act as important sources of information associated with the complex physical processes that occur during materials deposition and subsequent thermal cycles. Indeed, they act as materials-state ‘fossil’ records of the dynamic AM process. The approach of using defects as epoch-like records of prior history has been developed while studying additively manufactured Ti–6Al–4V and has given new insights into processes that may otherwise remain either obscured or unquantified. Analogous to ‘epochs,’ the evolution of these defects often is characterized by physics that span across a temporal length scale. To demonstrate this approach, a broad range of analyses including optical and electron microscopy, X-ray computed tomography, energy-dispersive spectroscopy, and electron backscatter diffraction have been used to characterize a raster-scanned electron beam Ti–6Al–4V sample. These analysis techniques provide key characteristics of defects such as their morphology, location within the part, complex compositional fields interacting with the defects, and structures on the free surfaces of defects. Observed defects have been classified as banding, spherical porosity, and lack of fusion. Banding is directly related to preferential evaporation of Al, which has an influence on mechanical properties. Lack-of-fusion defects can be used to understand columnar grain growth, fluid flow of melt pools, humping, and spattering events. Graphical abstract

36 MATERIALS SCIENCE↗
DOE OSTI2021

Submonolayer Quantum-Dot Based Saturable Absorber for Femtosecond Pulse Generation

Semiconductor saturable absorber mirrors (SESAMs) enable passive modelocking of several ultrafast solid-state lasers. Conventionally, SESAMs in the 1-µm wavelength range have employed InGaAs quantum wells (QWs) as absorbers. Here we demonstrate a SESAM based on InAs/GaAs submonolayer quantum dots (SML QDs) capable of generating femtosecond pulses by passively modelocking a vertical-external-cavity surface-emitting laser (VECSEL). Structural measurements are carried out to verify the quality and composition of the QDs. Modelocking experiments with a VECSEL and the QD SESAM in a ring cavity configuration yield pulses as short as 185 fs at 1025 nm. Compared to a traditional QW absorber, SML QD SESAMs exhibit ~ 25% faster recovery times. This also translates to slower power degradation rates or higher damage thresholds in SML QD SESAMs.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Interface-Driven Plasticity in Metal–Ceramic Nanolayered Composites: Direct Validation of Multiscale Deformation Modeling via In Situ Indentation in TEM

Here, we present in situ indentation in a transmission electron microscope on Al-TiN multilayers with individual layer thicknesses of 50 nm and 2.7 nm to explore the effect of length scales on the plastic co-deformability of a metal and a ceramic. At 50 nm, plasticity was confined to the Al layers with brittle fracture in the TiN layers. At 5 nm and below, cracking in TiN was suppressed with co-deformation evident in both layers. The in situ transmission electron microscopy (TEM) straining results demonstrate a profound size effect in enhancing plastic co-deformability in nanoscale metal-ceramic multilayers, as well as direct validation of ex situ and 3-D elastic–plastic deformation models.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Intergranular Strain Evolution During Biaxial Loading: A Multiscale FE-FFT Approach

Predicting the macroscopic and microscopic mechanical response of metals and alloys subjected to complex loading conditions necessarily requires a synergistic combination of multiscale material models and characterization techniques. This article focuses on the use of a multiscale approach to study the difference between intergranular lattice strain evolution for various grain families measured during in situ neutron diffraction on dog bone and cruciform 316L samples. At the macroscale, finite element simulations capture the complex coupling between applied forces and gauge stresses in cruciform geometries. The predicted gauge stresses are used as macroscopic boundary conditions to drive a mesoscale full-field elasto-viscoplastic fast Fourier transform crystal plasticity model. The results highlight the role of grain neighborhood on the intergranular strain evolution under uniaxial and equibiaxial loading.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Low-Field Alignment of Anisotropic Bonded Magnets for Additive Manufacturing of Permanent Magnet Motors

Additive manufacturing techniques for fabricating bonded magnets have the potential to reduce manufacturing cost and time-to-market of products and address the criticality of rare-earth elements (REEs), which is a concern for economic design of dependent applications such as permanent magnet machines. We investigated the magnetic alignment of anisotropic bonded magnet material comprising 65 vol.% Nd-Fe-B in nylon-12 produced by extrusion in a 20-W brushless direct current surface permanent magnet motor for submersible water pump application using finite element analysis. The results predict that sufficient alignment for this application could be obtained at low alignment fields (μoH ≤ 1 T) with a reduction in the volume of critical materials by up to 40% compared with isotropic permanent magnets. Furthermore, this demonstrates the economic feasibility of incorporating a magnetic alignment field source into additive manufacturing systems for bonded magnets, and the potential of aligned anisotropic bonded magnets to address REE criticality.

36 MATERIALS SCIENCE↗
DOE OSTI2016

On capturing the grain-scale elastic and plastic anisotropy of alpha-Ti with spherical nanoindentation and electron back-scattered diffraction

Here, spherical nanoindentation combined with electron back-scattered diffraction has been employed to characterize the grain-scale elastic and plastic anisotropy of single crystal alpha-Ti of two different compositions (in two different titanium alloys). Data analyses protocols needed to reliably extract the desired properties of interest are extended and demonstrated in this paper. Specifically, the grain-scale mechanical response is extracted in the form of indentation stress-strain curves for commercially pure (CP-Ti) alpha-Ti and alloyed (Ti-64) titanium from measurements on polycrystalline samples. The results are compared with responses of single crystals and nanoindentation tests (hardness and modulus) from the literature, and the measured indentation moduli are validated using crystal-elastic finite element simulations. The results obtained in this study show that (i) it is possible to characterize reliably the elastic and plastic anisotropy of alpha-Ti (hcp) of varying alloying contents with spherical nanoindentation stress-strain curves, (ii) the indentation modulus of alpha-Ti-64 is 5–10% less than CP-Ti, and (iii) the indentation yield strength of alpha-Ti-64 is 50–80% higher than CP-Ti.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Ballistic-diffusive phonon heat transport across grain boundaries

The propagation of a heat pulse in a single crystal and across grain boundaries (GBs) is simulated here using a concurrent atomistic-continuum method furnished with a coherent phonon pulse model. With a heat pulse constructed based on a Bose-Einstein distribution of phonons, this work has reproduced the phenomenon of phonon focusing in single and polycrystalline materials. Simulation results provide visual evidence that the propagation of a heat pulse in crystalline solids with or without GBs is partially ballistic and partially diffusive, i.e., there is a co-existence of ballistic and diffusive thermal transport, with the long-wavelength phonons traveling ballistically while the short-wavelength phonons scatter with each other and travel diffusively. To gain a quantitative understanding of GB thermal resistance, the kinetic energy transmitted across GBs is monitored on the fly and the time-dependent energy transmission for each specimen is measured; the contributions of coherent and incoherent phonon transport to the energy transmission are estimated. Simulation results reveal that the presence of GBs modifies the nature of thermal transport, with the coherent long-wavelength phonons dominating the heat conduction in materials with GBs. In addition, it is found that phonon-GB interactions can result in reconstruction of GBs.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Switchable polar spirals in tricolor oxide superlattices

There are increasing evidences that ferroelectric states at the nanoscale can exhibit fascinating topological structures including polar vortices and skyrmions, akin to those observed in the ferromagnetic systems. Here we report the discovery of a new type of polar topological structure, an ordered array of nanoscale spirals, in the PbTiO 3 /BiFeO 3 /SrTiO 3 tricolor ferroelectric superlattice system obtained via phase-field simulations. This polar spiral structure is composed of fine ordered semi-vortex arrays with vortex cores forming a wavy distribution. It is demonstrated that the tricolor system has an ultrahigh Curie temperature of ~1000 K and a temperature of ~800 K for the phase transformation from spiral structure to in-plane orthorhombic domain structure, demonstrating a great thermal stability. The periodicity phase-diagram is constructed, showing multiple phases from inplane domain, polar spiral, and polar vortex to flux-closure with increasing ferroelectric layer thickness. Moreover, the spiral structure has a net in-plane polarization that could be switched by an experimentally-feasible irrotational in-plane field. The switching process involves a metastable vortex state and is fully reversible. This discovery could open up a new routine to design novel multiferroic topological structures with enhanced stability and tunability towards potential future applications in next-generation electronics.

36 MATERIALS SCIENCE↗