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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,351 records · Page 75
All sourcesNASA NTRSDOE OSTI
NASA NTRS2019

Inclusion of Radiation Environment Variability for Reliability Estimates for SiC Power MOSFETs

Variability of the solar energetic particle environment is investigated for single-event-burnout reliability of silicon-carbide power metal-oxide-semiconductor field effect transistors. A probabilistic assessment of failure evaluates the benefits of de-rating voltage, shielding, and mission length. The Prediction of Solar particle Yields for Characterizing Integrating Circuits code is used to calculate a cumulative density function for the fluence of the environment. The lethal ion method is then used to determine what proportion of the environment will cause single-event-burnout. The operating voltage determines the lowest linear-energy-transfer particle that will cause single-event-burnout and that should be included in the environment distribution. The shielding and mission length also determine the final environment distribution of the mission fluence. Through calculating the reliability for different operating voltages, shielding, and mission length for a specific device, it is shown that shielding thickness and operating voltage have a large effect on reliability and can be traded off during the design.

Heavy ion↗
DOE OSTI2021

Conducting metal oxides integrated with the surface acoustic wave (SAW) sensor platform

One or more embodiments relates a single port surface acoustic wave sensor (SAW) device adapted for use in a wide range of operational temperatures and gas phase chemical species. The device includes a piezoelectric crystal substrate; at least one interdigitated electrode/transducer (IDT) positioned on the piezoelectric crystal substrate; and at least one conducting metal oxide film positioned on the piezoelectric crystal substrate and in communication with at least the IDT.

Ohodnicki, Jr., Paul R.↗
NASA NTRS2008

Logic Gates Made of N-Channel JFETs and Epitaxial Resistors

Prototype logic gates made of n-channel junction field-effect transistors (JFETs) and epitaxial resistors have been demonstrated, with a view toward eventual implementation of digital logic devices and systems in silicon carbide (SiC) integrated circuits (ICs). This development is intended to exploit the inherent ability of SiC electronic devices to function at temperatures from 300 to somewhat above 500 C and withstand large doses of ionizing radiation. SiC-based digital logic devices and systems could enable operation of sensors and robots in nuclear reactors, in jet engines, near hydrothermal vents, and in other environments that are so hot or radioactive as to cause conventional silicon electronic devices to fail. At present, current needs for digital processing at high temperatures exceed SiC integrated circuit production capabilities, which do not allow for highly integrated circuits. Only single to small number component production of depletion mode n-channel JFETs and epitaxial resistors on a single substrate is possible. As a consequence, the fine matching of components is impossible, resulting in rather large direct-current parameter distributions within a group of transistors typically spanning multiples of 5 to 10. Add to this the lack of p-channel devices to complement the n-channel FETs, the lack of precise dropping diodes, and the lack of enhancement mode devices at these elevated temperatures and the use of conventional direct coupled and buffered direct coupled logic gate design techniques is impossible. The presented logic gate design is tolerant of device parameter distributions and is not hampered by the lack of complementary devices or dropping diodes. In addition to n-channel JFETs, these gates include level-shifting and load resistors (see figure). Instead of relying on precise matching of parameters among individual JFETS, these designs rely on choosing the values of these resistors and of supply potentials so as to make the circuits perform the desired functions throughout the ranges over which the parameters of the JFETs are distributed. The supply rails V(sub dd) and V(sub ss) and the resistors R are chosen as functions of the distribution of direct-current operating parameters of the group of transistors used.

Krasowski, Michael J.↗
DOE OSTI2022

Precision Tomography of a Three-Qubit Donor Quantum Processor in Silicon

Nuclear spins were among the first physical platforms to be considered for quantum information processing, because of their exceptional quantum coherence and atomic-scale footprint. However, their full potential for quantum computing has not yet been realized, owing to the lack of methods with which to link nuclear qubits within a scalable device combined with multi-qubit operations with sufficient fidelity to sustain fault-tolerant quantum computation. Here we demonstrate universal quantum logic operations using a pair of ion-implanted 31 P donor nuclei in a silicon nanoelectronic device. A nuclear two-qubit controlled-Z gate is obtained by imparting a geometric phase to a shared electron spin, and used to prepare entangled Bell states with fidelities up to 94.2(2.7)%. The quantum operations are precisely characterized using gate set tomography (GST), yielding one-qubit average gate fidelities up to 99.95(2)%, two-qubit average gate fidelity of 99.37(11)% and two-qubit preparation/measurement fidelities of 98.95(4)%. These three metrics indicate that nuclear spins in silicon are approaching the performance demanded in fault-tolerant quantum processors. We then demonstrate entanglement between the two nuclei and the shared electron by producing a Greenberger-Horne-Zeilinger three-qubit state with 92.5(1.0)% fidelity. Because electron spin qubits in semiconductors can be further coupled to other electrons or physically shuttled across different locations, these results establish a viable route for scalable quantum information processing using donor nuclear and electron spins.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2021

Companion Assisted Software Based Remote Attestation in SCADA Networks

Critical infrastructure such as power generation and water distribution systems have become a priority target in cyber warfare because of their recent computerization and introduction to the internet. As a result, Supervisory Control and Data Acquisition (SCADA) system security has become a hot topic in academic and industrial research. Among these topics, Remote Attestation is a security method intended to detect the presence of fileless malware in remote devices as they continue to operate. This allows for the detection of malware in the absence of long-term storage artifacts before symptoms of compromise begin to appear. In general, a trusted device (the verifier) makes a request for evidence of innocence from the untrusted device (the prover). In software-based schemes, the verifier can then measure the delay between its request and the prover’s response. If this delay is greater than the known computational time of the evidence gathering algorithm performed by the prover, then evidence may have been forged. Multi-hop networks often introduce too much network jitter to allow accurate measurement of prover response time, which limits the effectiveness of software based Remote Attestation in a real-world setting. In this work, we introduce a companion device that the verifier can trust to perform a subset of attestation, thereby removing any network jitter. This device is a Field Programmable Gate Array (FPGA) that is physically connected to the prover. We provide a communication protocol between the verifier, prover, and companion. To evaluate our scheme, we simulate it in a common SCADA network environment under normal and heavy traffic loads. Our simulations are performed in the discrete event network simulator NS-3, and we perform statistical analysis over our results to show that our scheme allows for tight timing constraints to be placed on the prover such that the verifier can more easily determine the validity of the evidence that it receives.

Johnson, William A.↗
NASA NTRS1996

Silicon Carbide Epitaxial Films Studied by Atomic Force Microscopy

Silicon carbide (SiC) holds great potential as an electronic material because of its wide band gap energy, high breakdown electric field, thermal stability, and resistance to radiation damage. Possible aerospace applications of high-temperature, high-power, or high-radiation SiC electronic devices include sensors, control electronics, and power electronics that can operate at temperatures up to 600 C and beyond. Commercially available SiC devices now include blue light-emitting diodes (LED's) and high-voltage diodes for operation up to 350 C, with other devices under development. At present, morphological defects in epitaxially grown SiC films limit their use in device applications. Research geared toward reducing the number of structural inhomogeneities can benefit from an understanding of the type and nature of problems that cause defects. The Atomic Force Microscope (AFM) has proven to be a useful tool in characterizing defects present on the surface of SiC epitaxial films. The in-house High-Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research Center not only extended the dopant concentration range achievable in epitaxial SiC films, but it reduced the concentration of some types of defects. Advanced structural characterization using the AFM was warranted to identify the type and structure of the remaining film defects and morphological inhomogeneities. The AFM can give quantitative information on surface topography down to molecular scales. Acquired, in part, in support of the Advanced High Temperature Engine Materials Technology Program (HITEMP), the AFM had been used previously to detect partial fiber debonding in composite material cross sections. Atomic force microscopy examination of epitaxial SiC film surfaces revealed molecular-scale details of some unwanted surface features. Growth pits propagating from defects in the substrate, and hillocks due, presumably, to existing screw dislocations in the substrates, were imaged. Away from local defects, step bunching was observed to yield step heights of hundreds of angstroms, with possible implications for the uniformity of dopants incorporated in SiC devices during fabrication. The quantitative topographic data from the AFM allow the relevant defect information to be extracted, such as the size and distribution of step bunching and the Burgers vector of screw dislocations. These atomic force microscopy results have furthered the understanding of the dynamic epitaxial SiC growth process. A model describing the observed hillock step bunching has been proposed. This cooperation between researchers involved in crystal growth, electronic device fabrication, and surface structural characterization is likely to continue as atomic force microscopy is used to improve SiC films for high-temperature electronic devices for NASA's advanced turbine engines and space power devices, as well as for future applications in the automotive industry.

Source record↗
NASA NTRS1987

Design and operation of a 100 kW subscale MPD engine

The design and operation of a subscale MPD device is described as part of a program to develop a multimegawatt engine. The device is used as a test bed for component development, primarily the cathode and anode. The first series of exploratory tests have been conducted and the engine has been operated for 8.5 hours in the steady state, over 74 runs, and at a power level as high as 72 kW. A diffuser based vacuum tank pumping scheme has been evaluated with the engine operating at 17 kW and shows a positive result.

King, D. Q.↗
NASA NTRS1987

Neutron radiation tolerance of Au-activated silicon

Double injection devices prepared by the introduction of deep traps, using the Au activation method have been found to tolerate gamma irradiation into the Gigarad (Si) region without significant degradation of operating characteristics. Silicon double injection devices, using deep levels creacted by Au diffusion, can tolerate fast neutron irradiation up to 10 to the 15th n/sq cm. Significant parameter degradation occurs at 10 to the 16th n/sq cm. However, since the actual doping of the basic material begins to change as a result of the transmutation of silicon into phosphorus for neutron fluences greater than 10 to the 17th/sq cm, the radiation tolerance of these devices is approaching the limit possible for any device based on initially doped silicon.

Joyner, W. T.↗
NASA NTRS1984

Some thoughts on the implementation of pilot night vision devices for helicopters

Night vision enhancement devices greatly expand the range and quality of services by extending night operational capabilities. Evolving military tactical concepts for helicopters survivability and battlefield effectiveness necessitate nap-of-the-earth (NOE) flying under both day and night conditions. From a pilot workload standpoint, flying a helicopter NOE in day VFR conditions with minimum clearance between rotors and obstacles is quite demanding. Doing the same job at night is several times more difficult. There are two general categories of night vision devices in operation in helicopter aviation: the Night Vision Goggles (NVG) and forward looking infrared (FLIR) system. The capabilities and limitations of those two devices are discussed.

Tucker, G. E.↗
DOE OSTI2022

Diagnostics for multiple frequency heating and investigation of underlying processes

The development of new facilities routinely challenges ion source designers to build and operate sources that can achieve ever higher beam intensities and energies. As shown in this work, electron cyclotron resonance ion sources have proven to be extremely capable in meeting these challenges through the production of intense beams of medium and high-charge state ions. As performance boundaries are pushed, source stability becomes an issue as does the technology required to meet the challenge. Multiple frequency heating, the simultaneous use of two or more plasma heating frequencies, is a powerful tool in meeting the simultaneous need of intensity and stability. Relatively straightforward to utilize, the technique has been employed at numerous facilities to increase beam current and achievable charge state while also stabilizing the plasma. Its application has expanded the operational boundaries of existing and next generation sources, demonstrating that these devices have not yet achieved their full operational potential. To better understand the underlying physics, the diagnostics used to probe the source operational boundaries and the plasma properties have become increasingly sophisticated. In concert with detailed modeling, they are beginning to provide insight into the heating mechanism and, with that, the prospect of future advances.

47 OTHER INSTRUMENTATION↗
DOE OSTI2026

A Benchmark Suite for Evaluating Scientific AI Workloads on GPUs

AI applications have been steadily increasing in the allocation portfolio among leadership computing facilities. These applications depend on deep learning frameworks with hardware acceleration and underlying software systems. With the rapid development of applications, software stacks, and hardware devices, it is essential to evaluate the performance of core operations in AI workloads for direction of optimizations and procurement of next-generation high-performance computing (HPC) infrastructures. Currently, most benchmarks lack scientific AI workloads. So, we present DeepKernelBench and the experimental results of evaluating the benchmark suite for early observations and performance comparisons on datacenter GPUs using representative workloads for scientific AI, including Attentions, General matrix multiplications, Geometrics and Fourier neural operations.

Jin, Zheming [Advanced Micro Devices (AMD)]↗
DOE OSTI2025

Real-Time Lifetime Prediction of Semiconductor Devices Using Hardware-in-the-Loop

This paper presents a unique approach to enable real-time lifespan prediction of semiconductor power modules using a Hardware-in-the-Loop (HIL) system. By integrating the module's overall loss characteristics-specifically switching and conduction losses-with a thermoelectric model of the thermal management system, this research demonstrates that the model can dynamically estimates the junction temperature profile of the semiconductor devices in response to a changing torque demand profile for the motor drive system. This capability enables continuous monitoring of the module's operational time and cumulative stress induced on the devices to compute accumulated remaining lifetime or time-to-failure (TTF). This study provides an architectural framework for the HIL system with high-fidelity component models of multiple physical domains, allowing simulation of dynamic behaviors of a closely-coupled motor drive system. The advanced real-time computation and measurement functionalities of the HIL system allow for both dynamic lifetime calculations based on simulated data and aggregate lifetime predictions utilizing historical data. Moreover, this paper details an algorithm that not only computes cumulative damage but also synthesizes these data into a comprehensive aggregated lifetime metric. This methodology can enhance the maintenance scheduling strategies and operational reliability of semiconductor devices in critical applications, ultimately extending their service life while optimizing performance.

hardware-in-the-loop (HIL)↗
NASA NTRS1994

Low-Voltage Bypass Device

Improved bypass device provides low-resistance current shunt around low-voltage power cell when cell fails in open-circuit condition during operation. In comparison with older bypass devices for same application, this one weighs less, generates less heat, and has lower voltage drop (less resistance). Bypass device connected in parallel with power cell. Draws very little current during normal operation of cell.

Wilson, J. P.↗
NASA NTRS2008

Computational Investigation of the NASA Cascade Cyclonic Separation Device

Devices designed to replace the absent buoyancy separation mechanism within a microgravity environment are of considerable interest to NASA as the functionality of many spacecraft systems are dependent on the proper sequestration of interpenetrating gas and liquid phases. Inasmuch, a full multifluid Euler-Euler computational fluid dynamics investigation has been undertaken to evaluate the performance characteristics of one such device, the Cascade Cyclonic Separator, across a full range of inlet volumetric quality with combined volumetric injection rates varying from 1 L/min to 20 L/min. These simulations have delimited the general modes of operation of this class of devices and have proven able to describe the complicated vortex structure and induced pressure gradients that arise. The computational work has furthermore been utilized to analyze design modifications that enhance the overall performance of these devices. The promising results indicate that proper CFD modeling may be successfully used as a tool for microgravity separator design.

Hoyt, Nathaniel C.↗
NASA NTRSDate not supplied

Surface Instability of Liquid Propellants in Microgravity During Pulsed Settling Operations

Pulsing reaction control system (RCS) thrusters, vent valves, or other propulsion devices can preserve propellant resources in space, but this operation also effectively introduces a vibration to the vehicle. When the vibration is perpendicular to the liquid propellant surface, Faraday waves may be generated at the liquid-vapor interface. These Faraday instabilities can perturb or break up the liquid surface of cryogenic tanks, leading to inefficiencies in thermal management or even ullage collapse. Drawing from theory and experiments, an engineering model defining the allowable design regions for pulsed settling in microgravity was assembled and verified with computational fluid dynamics (CFD) simulations. A traditional settling metric, the Bond number, was also overlaid in the model to indicate which duty cycles were insufficient to overcome surface tension and aggregate propellant. Mission planners and engineers can consult the tool to rapidly evaluate the stability of a liquid-vapor interface given the pulse frequency and the excitation acceleration. Expressions developed for Faraday waves induced by a sinusoidal forcing input at standard gravity were found to provide excellent predictive capabilities for pulsed, or rectangular, waveforms in the absence of a consistent gravitational acceleration. This study extends the usage of these equations to an alternative forcing function and microgravity environments for the purpose of estimating natural frequencies, surface mode shapes, surface wave amplitudes, and the onset of droplet ejection. CFD simulations with the Loci/STREAM-VoF (Volume of Fluid) solver were initially validated against experimental results in standard gravity. Discrete points on the design map were then investigated with CFD and confirmed that the engineering model reliably indicates surface stability and most Faraday wave characteristics without requiring higher-fidelity tools. The engineering model is highly extensible and can be adapted for various propellant fill fractions, fluid properties, and tank sizes.

Faraday Waves↗
NASA NTRSDate not supplied

Surface Instability of Liquid Propellants in Microgravity During Pulsed Settling Operations

Pulsing reaction control system (RCS) thrusters, vent valves, or other propulsion devices can preserve propellant resources in space, but this operation also effectively introduces a vibration to the vehicle. When the vibration is perpendicular to the liquid propellant surface, Faraday waves may be generated at the liquid-vapor interface. These Faraday instabilities can perturb or break up the liquid surface of cryogenic tanks, leading to inefficiencies in thermal management or even ullage collapse. Drawing from theory and experiments, an engineering model defining the allowable design regions for pulsed settling in microgravity was assembled and verified with computational fluid dynamics (CFD) simulations. A traditional settling metric, the Bond number, was also overlaid in the model to indicate which duty cycles were insufficient to overcome surface tension and aggregate propellant. Mission planners and engineers can consult the tool to rapidly evaluate the stability of a liquid-vapor interface given the pulse frequency and the excitation acceleration. Expressions developed for Faraday waves induced by a sinusoidal forcing input at standard gravity were found to provide excellent predictive capabilities for pulsed, or rectangular, waveforms in the absence of a consistent gravitational acceleration. This study extends the usage of these equations to an alternative forcing function and microgravity environments for the purpose of estimating natural frequencies, surface mode shapes, surface wave amplitudes, and the onset of droplet ejection. CFD simulations with the Loci/STREAM-VoF (Volume of Fluid) solver were initially validated against experimental results in standard gravity. Discrete points on the design map were then investigated with CFD and confirmed that the engineering model reliably indicates surface stability and most Faraday wave characteristics without requiring higher-fidelity tools. The engineering model is highly extensible and can be adapted for various propellant fill fractions, fluid properties, and tank sizes.

Faraday Waves↗
DOE OSTI2020

Structural and spectral dynamics of single-crystalline Ruddlesden-Popper phase halide perovskite blue light-emitting diodes

Achieving perovskite-based high–color purity blue-emitting light-emitting diodes (LEDs) is still challenging. Here, we report successful synthesis of a series of blue-emissive two-dimensional Ruddlesden-Popper phase single crystals and their high–color purity blue-emitting LED demonstrations. Although this approach successfully achieves a series of bandgap emissions based on the different layer thicknesses, it still suffers from a conventional temperature-induced device degradation mechanism during high-voltage operations. To understand the underlying mechanism, we further elucidate temperature-induced device degradation by investigating the crystal structural and spectral evolution dynamics via in situ temperature-dependent single-crystal x-ray diffraction, photoluminescence (PL) characterization, and density functional theory calculation. The PL peak becomes asymmetrically broadened with a marked intensity decay, as temperature increases owing to [PbBr 6 ] 4- octahedra tilting and the organic chain disordering, which results in bandgap decrease. This study indicates that careful heat management under LED operation is a key factor to maintain the sharp and intense emission.

36 MATERIALS SCIENCE↗