SEARCH · Engineering Papers

Results for “device”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,351 records · Page 75

All sources NASA NTRS DOE OSTI

DOE OSTI2023

Thin-film TaAs: Developing a platform for Weyl semimetal devices

MX monopnictide compounds (M = Nb,Ta, X = As,P) are prototypical 3D Weyl semimetals (WSMs) that have been shown in bulk single crystal form to have potential for a wide variety of novel devices due to topologically protected band structures and high mobilities. However, very little is known about thin-film synthesis, which is essential to enable device applications. We synthesize TaAs(001) epilayers by molecular beam epitaxy on GaAs(001) and provide an experimental phase diagram illustrating conditions for single-phase, single-crystal-like growth. We investigate the relationship between nanoscale defects and electronic structure using angle-resolved photoemission spectroscopy, kelvin probe force microscopy, and transmission electron microscopy. Our results provide a roadmap and platform for developing 3D WSMs for device applications.

36 MATERIALS SCIENCE↗

DOE OSTI2016

Residual position errors of lymph node surrogates in breast cancer adjuvant radiotherapy: Comparison of two arm fixation devices and the effect of arm position correction

Residual position errors of the lymph node (LN) surrogates and humeral head (HH) were determined for 2 different arm fixation devices in radiotherapy (RT) of breast cancer: a standard wrist-hold (WH) and a house-made rod-hold (RH). The effect of arm position correction (APC) based on setup images was also investigated. A total of 113 consecutive patients with early-stage breast cancer with LN irradiation were retrospectively analyzed (53 and 60 using the WH and RH, respectively). Residual position errors of the LN surrogates (Th1-2 and clavicle) and the HH were investigated to compare the 2 fixation devices. The position errors and setup margins were determined before and after the APC to investigate the efficacy of the APC in the treatment situation. A threshold of 5 mm was used for the residual errors of the clavicle and Th1-2 to perform the APC, and a threshold of 7 mm was used for the HH. The setup margins were calculated with the van Herk formula. Irradiated volumes of the HH were determined from RT treatment plans. With the WH and the RH, setup margins up to 8.1 and 6.7 mm should be used for the LN surrogates, and margins up to 4.6 and 3.6 mm should be used to spare the HH, respectively, without the APC. After the APC, the margins of the LN surrogates were equal to or less than 7.5/6.0 mm with the WH/RH, but margins up to 4.2/2.9 mm were required for the HH. The APC was needed at least once with both the devices for approximately 60% of the patients. With the RH, irradiated volume of the HH was approximately 2 times more than with the WH, without any dose constraints. Use of the RH together with the APC resulted in minimal residual position errors and setup margins for all the investigated bony landmarks. Based on the obtained results, we prefer the house-made RH. However, more attention should be given to minimize the irradiation of the HH with the RH than with the WH.

61 RADIATION PROTECTION AND DOSIMETRY↗

DOE OSTI2018

4D nano-tomography of electrochemical energy devices using lab-based X-ray imaging

Electrochemical energy devices offer a variety of alternate means for low-carbon, multi-scale energy conversion and storage. Reactions in these devices are supported by electrodes with characteristically complex microstructures. To meet the increasing capacity and lifetime demands across a range of applications, it is essential to understand microstructural evolutions at a cell and electrode level which are thought to be critical aspects influencing material and device lifetime and performance. X-ray computed tomography (CT) has become a highly employed method for non-destructive characterisation of such microstructures with high spatial resolution. However, sub-micron resolutions present significant challenges for sample preparation and handling particularly in 4D studies, (three spatial dimensions plus time). Here, microstructural information is collected from the same region of interest within two electrode materials: a solid oxide fuel cell and the positive electrode from a lithium-ion battery. Using a lab-based X-ray instrument, tomograms with sub-micron resolutions were obtained between thermal cycling. The intricate microstructural evolutions captured within these two materials provide model examples of 4D X-ray nano-CT capabilities in tracking challenging degradation mechanisms. Furthermore, this technique is valuable in the advancement of electrochemical research as well as broader applications for materials characterisation.

25 ENERGY STORAGE↗

DOE OSTI2020

Impact of nuclear reactor radiation on the performance of AlN/sapphire surface acoustic wave devices

The performance of an AlN/sapphire surface acoustic wave (SAW) delay line device was characterized in real time under irradiation inside a nuclear reactor. Both its resonant frequency and transmission efficiency were observed to respond to a change in reactor power. The response follows an exponentially saturating behavior after a step power increase, followed by an exponentially decaying recovery after reactor shutdown. A sensitivity analysis based on the governing electro-mechanical equations shows that the frequency shift can be attributed to the softening of sapphire’s elastic constants under neutron radiation. Additionally, a kinetic rate equation is adopted to interpret device response and describe its microstructural evolution. These results suggest that the AlN/sapphire SAW device remains functional under irradiation, is sensitive to neutron and gamma ray fluxes, and offers an opportunity for remote sensing and in-situ measurement of material properties when exposed to nuclear reactor environment.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

DOE OSTI2017

Plasma edge and plasma-wall interaction modelling: Lessons learned from metallic devices

Robust power exhaust schemes employing impurity seeding are needed for target operational scenarios in present day tokamak devices with metallic plasma-facing components (PFCs). For an electricity-producing fusion power plant at power density P sep /R > 15 MW/m divertor detachment is a requirement for heat load mitigation. 2D plasma edge transport codes like the SOLPS code as well as plasma-wall interaction (PWI) codes are key to disentangle relevant physical processes in power and particle exhaust. With increased quantitative credibility in such codes more realistic and physically sound estimates of the life-time expectations and performance of metallic PFCs can be accomplished for divertor conditions relevant for ITER and DEMO. An overview is given on the recent progress of plasma edge and PWI modelling activities for (carbon-free) metallic devices, that include results from JET with the ITER-like wall, ASDEX Upgrade and Alcator C-mod. It is observed that metallic devices offer an opportunity to progress the understanding of underlying plasma physics processes in the edge. The validation of models can be substantially improved by eliminating carbon from the experiment as well as from the numerical system with reduced degrees of freedom as no chemical sputtering from amorphous carbon layers and no carbon or hydro-carbon transport are present. With the absence of carbon as the primary plasma impurity and given the fact that the physics of the PWI at metallic walls is less complex it is possible to isolate the crucial plasma physics processes relevant for particle and power exhaust. Finally, for a reliable 2D dissipative plasma exhaust model these are: cross-field drifts, complete kinetic neutral physics, geometry effects (including main-chamber, divertor and sub-divertor structures), SOL transport reflecting also the non-diffusive nature of anomalous transport, as well as transport within the pedestal region in case of significant edge impurity radiation affecting pedestal pressure and hence P sep .

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2019

Parametric modelling of a reconfigurable wave energy device

To date, one of the difficulties with wave energy devices is modulating the power transfer from the waves to the generator. In wind turbines, this is achieved by turbine pitch control, leading to the ubiquitous flat power curve. Recently, a wave energy converter, having moveable vanes, has been developed by the National Renewable Energy Laboratory (NREL) in the US. Furthermore, this paper described the development of a compact hydrodynamic model for the NREL device, based on multiple linear hydrodynamic modelling (Murray-Smith and Johansen, 1997), which can be used to model the hydrodynamic behaviour of the device across its full operational spectrum of vane angles. To show the utility of the model, we demonstrate a flat power curve for the WEC, using the vane angles as a control input.

16 TIDAL AND WAVE POWER↗

DOE OSTI2017

Effect of ferroelectricity on charge conduction in a PCBM/perovskite device structure

The ferroelectricity in hybrid perovskite solar cells has attracted much attention and its effect on the device transport and photovoltaic properties is still under debate. Here in this paper, we investigate theoretically the effect of ferroelectricity on the redistribution of charge in a PCBM/perovskite device through the Poisson equation. The spontaneous polarization is set to be a hyperbolic tangent function of applied electrical field. The carriers in both the layers are assumed to be in quasi-equilibrium, and the (dark) current stems from the recombination at the PCBM/perovskite interface. The electrostatic potential profiles throughout the device and the current-bias (I-V) curves are obtained numerically. It is found that for the bias forward scan, larger potential drop will be on the PCBM layer, and for the bias reverse scan larger potential drop will be on the perovskite layer. The hysteresis of curves is also obtained. Lastly, these results shed new light on the effect of ferroelectricity in hybrid perovskite materials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2022

Impact of ferromagnetic electrode length and thickness on Magnetic Tunnel Junction-Based Molecular Spintronic Devices (MTJMSD)

A knowledge gap exists about the impact of variation in length and thickness of ferromagnetic(FM) electrodes on molecular spintronics devices’ ability to manifest molecular coupling impact. Magnetic Tunnel Junction-Based Molecular Spintronic Devices (MTJMSDs) are potential candidates for inventing highly correlated materials and devices and investigating the fundamental science of organic spintronics. This paper reports our experi- mental observations providing the dramatic impact of variation in ferromagnetic electrode length and thickness on paramagnetic molecule-based MTJMSD. Room temperature transport studies were performed to investigate the effect of FM electrode thickness. On the other hand, magnetic force microscopy measurements were con- ducted to understand the effect of FM electrode length extending beyond the molecular junction area, i.e., the site where paramagnetic molecules bridged between two FM. In the strong molecular coupling regime, transport study suggested thickness variation caused ~1000 to million-fold differences in junction conductivity. MFM study revealed near-zero magnetic contrast for pillar-shaped MTJMSD without any extended FM electrode. However, MFM images showed a multitude of microscopic magnetic phases on cross junction shaped MTJMSD where FM electrodes extended beyond the junction area. To understand the intriguing experimental results, we conducted an in-depth theoretical study using Monte Carlo Simulation (MCS) approach. MCS study utilized a Heisenberg atomic model of cross junction shaped MTJMSD to gain insights about room temperature transport and MFM experimental observations of microscopic MTJMSD. To make this study applicable for a wide variety of MTJMSDs, we systematically studied the effect of variation in molecular coupling strength between magnetic molecules and ferromagnetic (FM) electrodes of various dimensions. Here, our theoretical results suggest 25 atoms thick FM electrode show very weak molecular coupling impact and of the same order of experimentally studied FM electrode dimensions showing weak effect. Also, MCS results agree with experimentally observed multiple magnetic phases on lengthy FM electrodes of an MTJMSD.

42 ENGINEERING↗

DOE OSTI2017

A review on design and performance of thermomagnetic devices

Thermomagnetic energy harvesting technology has not received significant attention despite great potential for generating electricity from low thermal gradient near room temperature. Here this review summarizes the findings reported in literature covering the broad topical areas within thermomagnetic energy harvesting and provides perspective on the potential applications of this technology. The information has been organized chronologically in order to provide systematic understanding of the concepts and evolution of the device designs. Both, active and passive types of thermomagnetic energy harvesters have been included in the paper. The selection of suitable thermomagnetic material is key towards achieving an efficient energy generation device. Therefore, various material compositions have been discussed and their thermomagnetic behavior has been elucidated to provide guidance for their implementation in future devices.

30 DIRECT ENERGY CONVERSION↗

DOE OSTI2024

Patterned dielectric back contact design for GaAs thermophotovoltaic devices

-Patterned-dielectric back contact structures in optoelectronic devices are designed to boost the reflectance of light from the device back surface while retaining a low-resistance pathway for electrical conductance. Their reduced light absorption at near- and sub-bandgap photon energies leads to improved luminescence in light-emitting diodes, greater photon recycling, voltage, and efficiency in photovoltaic cells, and greater recuperation of unabsorbed sub-bandgap light in thermophotovoltaic (TPV) systems. However, diffraction from the patterned features can deflect incident light in propagation directions that lead to light trapping and parasitic absorption in the cell. Here, in this article, we use rigorous coupled-wave analysis (RCWA) to study three-dimensional diffractive scattering of electromagnetic waves by periodic metal point-contact gratings on 1.42-eV GaAs TPV cells, to analyze their effect on unwanted sub-bandgap absorption in order to achieve higher TPV system efficiency. Solutions of Maxwell's equations calculated using RCWA are compared to measured sub-bandgap reflectance in experimental GaAs TPV devices with varying metal point-contact diameters and spacing. Modeling and experiments indicate decreased total reflectance due to these diffractive effects for a small point contact diameter of 1 μm, and this effect is much stronger at higher contact coverage fractions.

14 SOLAR ENERGY↗

DOE OSTI2024

Simulating nonlinear optical processes on a superconducting quantum device

Simulating plasma physics on quantum computers is difficult because most problems of interest are nonlinear, but quantum computers are not naturally suitable for nonlinear operations. In weakly nonlinear regimes, plasma problems can be modelled as wave–wave interactions. In this paper, we develop a quantization approach to convert nonlinear wave–wave interaction problems to Hamiltonian simulation problems. We demonstrate our approach using two qubits on a superconducting device. Unlike a photonic device, a superconducting device does not naturally have the desired interactions in its native Hamiltonian. Nevertheless, Hamiltonian simulations can still be performed by decomposing required unitary operations into native gates. To improve experimental results, we employ a range of error-mitigation techniques. Apart from readout error mitigation, we use randomized compilation to transform undiagnosed coherent errors into well-behaved stochastic Pauli channels. Moreover, to compensate for stochastic noise, we rescale exponentially decaying probability amplitudes using rates measured from cycle benchmarking. We carefully consider how different choices of product-formula algorithms affect the overall error and show how a trade-off can be made to best utilize limited quantum resources. This study provides an example of how plasma problems may be solved on near-term quantum computing platforms.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2025

Particle-based modelling of axisymmetric tandem mirror devices

In this work, we describe the use of a 1D-2V quasi-neutral hybrid electrostatic PIC with Monte-Carlo Coulomb collisions and non-uniform magnetic field to model the parallel transport and confinement in an axisymmetric tandem mirror device. End-plugs, based on simple-mirrors, are positioned at each end of the device and fueled with neutral beams (25 and 100 keV) to produce a sloshing ion population and increase the density of the end-plugs relative to the central cell. Results show the formation of a potential difference barrier between the central cell and the end-plugs. This potential confines a large fraction of the low energy thermal ions in the central cell which would otherwise be lost in a simple mirror, demonstrating the advantage of the beam-driven tandem mirror configuration relative to simple mirrors. In addition, we explore the effect of end-plug electron temperature on the confinement time of the device and compare it with theoretical estimates. Finally, we discuss the limitations of the code in its present form and describe the next logical steps to improve its predictive capability such as a fully nonlinear Fokker–Planck collision operator, multiply nested flux surface solutions and modeling the exhaust region up to the wall.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2020

Accessing Atomic-scale Phosphorus Dopant Distribution in Precise Silicon Devices by Advanced STEM Imaging and Spectroscopy

The structural and chemical characterization at the atomic-scale plays a critical role in understanding the structure-property relationship in precise electrical devices such as those produced by atomic-precision advanced manufacturing (APAM). APAM, utilizing hydrogen lithography in a scanning tunneling microscope, offers a potential pathway to ultra-efficient transistors, and has been developed to produce phosphorus (P)-based donor devices integrated into bare Si substrates. Structural characterization of the buried, Si with P dopant (Si:P) delta-layer in the devices by scanning transmission electron microscopy (STEM), however, is a challenge due to similar atomic number and low concentration of the P dopants. In this paper, we describe several efforts of utilizing advanced STEM imagining and spectroscopic techniques to quantify the Si:P deltalayers. STEM imaging combining low-angle and high-angle annular dark-field (LAADF, HAADF) detectors as well as atomic-scale elemental mapping using energy-dispersive X-ray spectroscopy (EDS) are used to reveal the P and defect distribution across the delta-layer processed under various thermal conditions.

47 OTHER INSTRUMENTATION↗

DOE OSTI2018

Multivariate Analysis To Quantify Species in the Presence of Direct Interferents: Micro-Raman Analysis of HNO 3 in Microfluidic Devices

Microfluidic devices are a growing field with significant potential for application to small scale processing of solutions. Much like large scale processing, fast, reliable, and cost effective means of monitoring the streams during processing are needed. Here we apply a novel Micro-Raman probe to the on-line monitoring of streams within a microfluidic device. For either macro or micro scale process monitoring via spectroscopic response, there is the danger of interfering or confounded bands obfuscating results. By utilizing chemometric analysis, a form of multivariate analysis, species can be accurately quantified in solution despite the presence of overlapping or confounded spectroscopic bands. This is demonstrated on solutions of HNO 3 and NaNO 3 within micro-flow and microfluidic devices.

Lines, Amanda M.↗

DOE OSTI2018

Micro-Raman technology to interrogate two-phase extraction on a microfluidic device

Microfluidic devices provide ideal environments to study solvent extraction. When droplets form and generate plug flow down the microfluidic channel, the device acts as a microreactor in which the kinetics of chemical reactions and interfacial transfer can be examined. Among the many benefits of microreactors is the ability to maintain small sample volumes, which is especially important when studying solvent extraction in harsh environments, such as in separations related to the nuclear fuel cycle. In solvent extraction, the efficiency of the process depends on complex formation and rates of transfer in biphasic systems. Thus, it is important to understand the kinetic parameters in an extraction system to maintain a high efficiency and effectivity of the process. Here we present a methodology that combines chemometric analysis with on-line micro-Raman spectroscopy to monitor biphasic extractions within a microfluidic device. This monitoring provided concentration measurements in both organic and aquoeus plugs as they flowed through the microfluidic channel. The biphasic system studied was comprised of HNO3 as the aqueous phase and 30 % (v/v) tributyl phosphate in n-dodecane comprised the organic phase, which simulated the Plutonium Uranium Redox EXtraction (PUREX) process. Using pre-equilibrated solutions (post extraction) the validity of the technique and methodology is illustrated. Following this validation, solutions that were not equilibrated were examined and the kinetics of interfacial mass transfer within the biphasic system were established. Results were compared to kinetics already determined on a macro scale to prove the efficacy of the technique

extraction, interfacial transport, liquid:liquid e↗

DOE OSTI2020

Quantitative Specifications to Avoid Degradation during E-Beam and Induced Current Microscopy of Halide Perovskite Devices

Degradation due to electron beam exposure has posed a challenge in the use of electron microscopy to probe halide perovskite materials and devices. Herein, the interaction between the electron beam and the perovskite across acceleration voltages and at low probe currents is investigated in a scanning electron microscope (SEM) by monitoring the electron-beaminduced current (EBIC) response in perovskite solar cells in a planview configuration. SEM probe conditions are identified where dozens of repeated scans over a single region of the perovskite solar cell induce minimal electronic degradation. Overall, the induced current response of the perovskite device is found to strongly depend upon the beam condition: rapid decay occurs at high beam powers, the current activates at the lowest beam powers, and a newfound quasi-steady response is revealed at intermediate beam conditions. A quantitative window for the successful conduction of e-beam studies with minimal electronic degradation is revealed by evaluating induced current response over a wide range of perovskite devices, which invites broader use of SEM-based characterization techniques, including EBIC, as powerful techniques for correlative microscopy investigations.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2021

Role of Cation Ordering on Device Performance in (Ag,Cu)InSe 2 Solar Cells with KF Post-Deposition Treatment

CuInSe 2 (CIS) has been proposed as an attractive bottom cell candidate in tandem solar cells. However, to justify the coupling with high-performance top cells (e.g., perovskites, GaAs), significant work on improving the efficiency is required. To this extent, several authors have demonstrated the benefits of alkali post-deposition treatments (PDT) to increase device open-circuit voltage (V oc ) in CIS and how Ag alloying - (Ag,Cu)InSe 2 (ACIS) - reduces defect density and enhances current collection in devices. Herein, we present a detailed study of the role that KF-PDT plays on CIS and ACIS absorber composition and structure, and propose an explanation for the decreased V oc observed when silver and potassium coexist in the system (ACIS + KF). Through a suite of synchrotron-based techniques, we investigate the nanoscale chemical distribution of the films and the formation of secondary phases. Through photoluminescence imaging, we observed a high degree of passivation with the addition of KF, and synchrotron-based X-ray diffraction confirmed the absence of a KInSe 2 surface layer usually considered to be a passivating agent. Raman spectroscopy and synchrotron X-ray fluorescence show the increased presence of Cu- and Se-poor clusters in ACIS + KF, which are correlated to significantly reduced X-ray beam-induced current (XBIC). An increase in the intensity of the E/B 2 stretching mode of CIS is attributed to cation ordering near the junction and is found to track inversely to bulk V oc measurements. The cation ordering is hypothesized to arise from the formation and redistribution of defects that normally occur near the surfaces of CIS as a consequence of its polar character. Here, these defects compensate each other, and the overall inhomogeneity of the charge distribution generates electrostatic potential fluctuations that greatly increase the saturation current and hence reduce the open-circuit voltage of the device.

36 MATERIALS SCIENCE↗

DOE OSTI2019

Wide-Bandgap Cu(In,Ga)S 2 Photocathodes Integrated on Transparent Conductive F:SnO 2 Substrates for Chalcopyrite-Based Water Splitting Tandem Devices

Recently, whole-chalcopyrite-based tandem devices for photoelectrochemical (PEC) water splitting have emerged as a promising route for obtaining ~20% solar-to-hydrogen efficiencies. Here we pursue this approach by demonstrating integration of the top cell wide-bandgap (E G ) chalcopyrite onto a transparent conductor, which is a critical step in the realization of tandem devices. We report specifically on our efforts to synthesize photoactive Cu(In,Ga)S 2 thin films on transparent conductive F:SnO 2 (FTO), while preserving the optoelectronic properties of the FTO substrate and preventing the formation of a resistive SnS x interfacial layer. We demonstrate that such attributes can be achieved via close-space sulfurization (CSS) of lower EG Cu(In,Ga)Se 2 precursors, co-evaporated on FTO at low-temperature. Depending on Cu(In,Ga)Se 2 precursors’ Ga and In content, the resulting Cu(In,Ga)S 2 solar absorbers have E G energies spanning 2.05 eV to 2.45 eV. The CSS process, which includes a low-temperature annealing in sulfur vapor followed by a high-temperature crystallization under inert atmosphere, allowed for up to 95% Se substitution with S in the chalcopyrite lattice, tuning both E G and band edge positions that impact PEC performance. Photoelectrochemical measurements performed under AM1.5G illumination in 0.5M H 2 SO 4 on the 2.05 eV CuInGaS 2 photocathode revealed a saturation photocurrent density (J SAT ) of -5.25 mA/cm 2 , a value corresponding to 38% of the absorber’s optical limit. We further concluded that such low J SAT originates from sub-par optical absorption of Cu(In,Ga)S 2 absorbers. Further enhancements of the CSS process are expected to improve material quality towards our end goal of achieving whole-chalcopyrite tandem PEC devices.

08 HYDROGEN↗