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At least 1,351 records · Page 75
All sourcesNASA NTRSDOE OSTI
NASA NTRS1974

Study of critical defects in ablative heat shield systems for the space shuttle

Experimental results are presented for a program conducted to determine the effects of fabrication-induced defects on the performance of an ablative heat shield material. Exposures representing a variety of space shuttle orbiter mission environments-humidity acoustics, hot vacuum and cold vacuum-culuminating in entry heating and transonic acoustics, were simulated on large panels containing intentional defects. Nondestructive methods for detecting the defects, were investigated. The baseline materials were two honeycomb-reinforced low density, silicone ablators, MG-36 and SS-41. Principal manufacturing-induced defects displaying a critical potential included: off-curing of the ablator, extreme low density, undercut (or crushed) honeycomb reinforcements, and poor wet-coating of honeycomb.

Miller, C. C.↗
NASA NTRS1973

Precise measurement of charged defects in III-V compounds (supplement 2)

Experimental methods and related theory which will permit the measurement of low concentrations of vacancies and other defects in III-V compound semiconductors are discussed. Once the nature of these defects has been determined, this information can be incorporated into a transport theory for devices constructed from these materials, and experiments conducted to test the theory. The vacancies and other defects in the III-V compounds are detected by measurement of the nuclear magnetic resonance (NMR) line width. Most of the III-V compounds have at least one isotope with a nuclear quadrupole moment. In a crystal with a cubic crystal field (characteristic of most III-V compounds) there is no quadrupole splitting of the Zeeman resonance line. However, a defect removes the cubic symmetry locally and causes splitting which result in a change of the NMR width. This change can be used to detect the presence of vacancies.

Soest, J. F.↗
NASA NTRS1975

Thermoluminescence and lattice defects in LiF

The principal effect of thermal and optical treatments in an ionic solid is to alter the lattice defect equilibrium, including the concentration and arrangement of ion vacancies, impurities, impurity-vacancy associates, and assorted electrons and holes which may be associated with such defects. This paper examines the relationship between these defects and thermoluminescence in the case of lithium fluoride at and above room temperature. The discussion focuses on lattice defect equilibrium, thermoluminescent trapping centers, the relationship between recombination and luminescence, the supralinearity and sensitization of the dosimetry grade of LiF and activation energy parameters.

Stoebe, T. G.↗
NASA NTRS1978

The impact of defects on the photovoltaic potential of RTR silicon ribbon

Silicon ribbon grown at a high rate by the ribbon-to-ribbon (RTR) method contains a variety of defects and can exhibit an unusual dendritic morphology. This paper is a study of the effect of the defect structure and dendritic morphology on the photovoltaic potential of RTR ribbon. Defects found in RTR ribbon include grain boundaries, twin planes, stacking faults and dislocations. The electrical activity of these defects is investigated by measuring the diffusion length in the ribbon; by fabricating small area diodes on the ribbon and evaluating their photoresponse; and by using a scanning electron microscope in the electron beam induced current mode. It is concluded that although grain boundaries serve very effectively as recombination centers, they do not occur frequently enough in RTR ribbons to significantly affect the generation current. Dislocation densities up to 1,000,000/sq cm can be tolerated without strongly reducing the photoresponse. Similarly, linear boundaries such as twin planes or stacking faults do not affect the cell performance up to densities of 1000/sq cm.

Baghdadi, A.↗
NASA NTRS1980

Effects of thermal annealing on the deep-level defects and I-V characteristics of 200 keV proton irradiated AlGaAs-GaAs solar cells

Detailed characterization of deep-level defects and analysis of dark I-V data in 200 keV proton irradiated AlGaAs-GaAs solar cells have been carried out for several proton fluences (5 x 10 to the 11th, 10 to the 12th, and 10 to the 13th P/sq cm), using DLTS, C-V, and I-V measurement techniques. To study the effect of low temperature thermal annealing on the deep-level defect properties, these irradiated samples were annealed in vacuum at 300 C for one hour. Comparison was then made on the measured defect parameters (i.e., defect energy levels and densities) and the dark I-V characteristics for both the annealed and unannealed samples.

Li, S. S.↗
NASA NTRS1980

Study of radiation induced deep-level defects in proton irradiated AlGaAs-GaAs solar cells

Radiation induced deep-level defects (both electron and hole traps) in proton irradiated AlGaAs-GaAs p-n junction solar cells are investigated along with the correlation between the measured defect parameters and the solar cell performance parameters. The range of proton energies studied was from 50 KeV to 10 MeV and the proton fluence was varied from 10 to the 10th power to 10 to the 13th power P/sq cm. Experimental tools employed include deep-level transient spectroscopy, capacitance-voltage, current voltage, and SEM-EBIC methods. Defect and recombination parameters such as defect density and energy level, capture cross section, carrier lifetimes and effective hole diffusion lengths in n-GaAs LPE layers were determined from these measurements.

Li, S. S.↗
NASA NTRS1981

Defect chemistry and characterization of Hg(1-x)Cd(x)Te

Undoped mercury cadmium telluride crystals were subjected to high temperature equilibration at temperatures ranging from 400 C to 655 C in various Hg atmospheres. Hall effect and mobility measurements were carried out on the crystals quenched to room temperature subsequent to the high temperature equilibration. The variation of the hole concentration in the cooled crystals at 77 K as a function of the partial pressure of Hg at the equlibration temperatures, together with a comparison of the hole mobility in the undoped samples with that in the copper and phosphorous doped samples yielded a defect model for the undoped crystals, according to which, the undoped crystals are essentially intrinsic at the equilibration temperatures and the native acceptor defects are doubly ionized. Native donor defects appear to be negligible in concentration, implying that the p to n conversion in these alloys is mainly due to residual foreign donor impurities. The thermodynamic constants for the intrinsic excitation process as well as for the incorporation of the doubly ionized native acceptor defects in the undoped crystals were obtained.

Vydyanath, H. R.↗
NASA NTRS1984

Radiation damage and defect behavior in ion-implanted, lithium counterdoped silicon solar cells

Boron doped silicon n+p solar cells were counterdoped with lithium by ion implanation and the resultant n+p cells irradiated by 1 MeV electrons. The function of fluence and a Deep Level Transient Spectroscopy (DLTS) was studied to correlate defect behavior with cell performance. It was found that the lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. It is concluded that the annealing behavior is controlled by dissociation and recombination of defects. The DLTS studies show that counterdoping with lithium eliminates at least three deep level defects and results in three new defects. It is speculated that the increased radiation resistance of the counterdoped cells is due primarily to the interaction of lithium with oxygen, single vacancies and divacancies and that the lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance.

Weinberg, I.↗
NASA NTRS1984

Defect interactions in GaAs single crystals

The two-sublattice structural configuration of GaAs and deviations from stoichiometry render the generation and interaction of electrically active point defects (and point defect complexes) critically important for device applications and very complex. Of the defect-induced energy levels, those lying deep into the energy band are very effective lifetime ""killers". The level 0.82 eV below the condition band, commonly referred to as EL2, is a major deep level, particularly in melt-grown GaAs. This level is associated with an antisite defect complex (AsGa - VAS). Possible mechanisms of its formation and its annihilation were further developed.

Gatos, H. C.↗
NASA NTRS1984

Radiation damage and defect behavior in ion-implanted, lithium counterdoped silicon solar cells

Boron doped silicon n+p solar cells were counterdoped with lithium by ion implantation and the resuitant n+p cells irradiated by 1 MeV electrons. The function of fluence and a Deep Level Transient Spectroscopy (DLTS) was studied to correlate defect behavior with cell performance. It was found that the lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. It is concluded that the annealing behavior is controlled by dissociation and recombination of defects. The DLTS studies show that counterdoping with lithium eliminates at least three deep level defects and results in three new defects. It is speculated that the increased radiation resistance of the counterdoped cells is due primarily to the interaction of lithium with oxygen, single vacanies and divacancies and that the lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance.

Weinberg, I.↗
NASA NTRS1984

The scattering of ultrasonic third sound from substrate surface defects

The interaction of third sound with isolated surface defects is examined. Phase-inverted reflections are observed to occur at surface defects even when the wavelength of the third sound is much greater than the dimensions of the defect. The origin of the scattering mechanism is believed to be due to the change in the helium film thickness in the vicinity of the topological variations introduced by the presence of the surface defects. Data are obtained for ultrasonic frequencies in the 20-200 kHz range.

Generazio, E. R.↗
NASA NTRS1985

DLTS analysis of radiation-induced defects in one-MeV electron irradiated germanium and Alsub0.17Gasub0.83As solar cells

The radiation-induced deep-level defects in one-MeV electron-irradiated germanium and AlxGal-xAs solar cell materials using the deep-level transient spectroscopy (DLTS) and C-V techniques were investigated. Defect and recombination parameters such as defect density and energy levels, capture cross sections and lifetimes for both electron and hole traps were determined. The germanium and AlGaAs p/n junction cells were irradiated by one-MeV electrons. The DLTS, I-V, and C-V measurements were performed on these cells. The results are summarized as follows: (1) for the irradiated germanium samples, the dominant electron trap was due to the E sub - 0.24 eV level with density around 4x10 to the 14th power 1/cu cm, independent of electron fluence, its origin is attributed to the vacancy-donor complex defect formed during the electron irradiation; (2) in the one-MeV electron irradiated Al0.17Ga0.83 as sample, two dominant electron traps with energies of Ec-0.19 and -0.29 eV were observed, the density for both electron traps remained nearly constant, independent of electron fluence. It is shown that one-MeV electron irradiation creates very few or no new deep-level traps in both the germanium and AlxGa1-xAs cells, and are suitable for fabricating the radiation-hard high efficiency multijunction solar cells for space applications.

Li, S. B.↗
NASA NTRS1986

Rapid thermal processing of Czochralski silicon substrates: Defects, denuded zones, and minority carrier lifetime

Rapid thermal processing (RTP) of Czochralski (Cz) silicon substrates is discussed with its attendant effects on defects, denuded zones, and minority carrier lifetime. Preferential chemical etching and X-ray topography was used to delineate defects which were subsequently correlated with minority carrier lifetime; determined by a pulse metallo-organic decompositon (MOD) test device. The X-ray delineation of grown-in defects was enhanced by a lithium decoration procedure. Results, thus far, show excellent correlation between process-induced defects.

Rozgonyi, G. S.↗
NASA NTRS1986

Cell performance and defect behavior in proton-irradiated lithium-counterdoped n(+)p silicon solar cells

Lithium-counterdoped n(+)p silicon solar cells were irradiated by 10-MeV protons, and their performance was determined as a function of fluence. It was found that the cell with the highest lithium concentration exhibited the higher radiation resistance. Deep-level transient spectroscopy studies of deep-level defects were used to identify two lithium-related defects. Defect energy levels obtained after the present 10-MeV irradiations were found to be markedly different than those observed after previous 1-MeV electron irradiations. However, the present DLTS data are consistent with previous suggestion by Weinberg et al. (1984) of a lithium-oxygen interaction which tends to inhibit formation of an interstitial boron-oxygen defect.

Weinberg, I.↗
NASA NTRS1988

Fatigue behavior of axial and pressure cycled butt and girth welds containing defects

This paper presents the results of a study directed at developing a data base for establishing fitness-for-purpose defect acceptance criteria for welds with defects. The study focused on A106 Grade B steel pipe. Data are presented for flat plate, wall segment, and vessel specimens and actual pipe sections containing either artificial or natural planar or volumetric defects. Defect acceptance criteria developed from the test data are discussed.

Leis, Brian N.↗
NASA NTRS1989

Metastable defects in Be-doped Al(x)Ga(1-x)As

Deep-level transient spectroscopy has been used to study metastable defects in Be-doped Al(x)Ga(1-x)As grown by molecular-beam epitaxy. The metastability manifests itself by the appearance of different spectra depending upon whether the sample is cooled from a high temperature with zero bias or a reverse bias applied to it. The defects are found in concentrations of 10 to the 15th/cu cm in a sample doped with 10 to the 18th Be/cu cm and in much lower concentrations in a 10 to the 17th Be/cu cm sample. Isochronal annealing experiments indicate that the defect is multistable and that it is best modeled as a mobile interstitial which can reside at several sites near acceptor. The activation energies for these defects are between 0.2 and 0.5 eV above the valence band.

Magno, R.↗
NASA NTRS1989

Test Data of Flow Field of Shuttle SRM Nozzle Joint with Bond Defects, Using Unheated Air

The nozzle-to-case joint on the Shuttle SRM (as redesigned after the Challenger accident) features an adhesive sealant filling and bonding the joint, with a wiper O-ring to prevent the adhesive from reaching and disabling the closure O-ring. Flawless implementation of that joint design would ensure that hot, corrosive propellant combustion gases never reach the closure O-ring. However, understanding the flow field related to bonding defects is prudent. A comprehensive test program was conducted to quantify such flow fields and associated heating environments. A two-dimensional, full-scale model represented 65 inches of the nozzle joint, using unheated air as the test medium, in a blowdown mode. Geometry variations modeled RSRM assembly tolerances, and two types of bonding defects: pullaways and blowholes. A range of the magnitude of each type defect was tested. Also a range of operational parameters was tested, representative of the RSRM flow environment, including duplication of RSRM Mach and Reynolds numbers. Extensive instrumentation was provided to quantify pressures, heat rates, and velocities. The resulting data established that larger geometric defects cause larger pressure and larger heating, at the closure O-ring region. Velocity trends were not so straight-forward. Variations in assembly tolerances did not generally affect flow fields or heating. Operational parameters affected flow fields and heating as might be expected, increasing density or velocity increased heating. Complete details of this test effort are presented.

Hair, Leroy M.↗
NASA NTRS1990

Effective actions for bosonic topological defects

A gauge field theory is considered which admits p-dimensional topological defects, expanding the equations of motion in powers of the defect thickness. In this way an effective action and effective equation of motion is derived for the defect in terms of the coordinates of the p-dimensional worldsurface defined by the history of the core of the defect.

Gregory, Ruth↗