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At least 1,351 records · Page 75
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

High-efficiency single-junction p-i-n GaAs solar cell on roll-to-roll epi-ready flexible metal foils for low-cost photovoltaics

We demonstrate the fabrication and characterization of high-efficiency, single-junction p-i-n GaAs solar cells, on flexible metal foil with epi-ready buffer via roll-to-roll fabrication. Single-junction p-i-n GaAs solar cells were fabricated using metal–organic chemical vapor deposition (MOCVD). Furthermore, an efficiency greater than 13% was obtained at 1 sun, which is the highest reported efficiency on GaAs photovoltaics directly deposited on metal tapes. This exceeds our previously reported study showcasing 11.5% efficiency on single-junction p-n solar cell structure. Improved morphology of p-i-n structure compared with p-n is explained by atomic force microscopy (AFM), scanning electron microscopy (SEM), and helium ion microscopy (HIM) measurements. Time-of-flight secondary ion mass spectrometry (TOF-SIMS) analysis showed reduced Zn diffusion in p-i-n cell compared with the p-n cell. We attribute the improvement in efficiency of p-i-n cells on flexible metal tapes to the quality of the junction, surface morphology, controlled diffusion of species within the active layers, and increase in absorption due to the optimized intrinsic layer thickness.

14 SOLAR ENERGY↗
NASA NTRS1980

New mounting improves solar-cell efficiency

Method boosts output by about 20 percent by trapping and redirecting solar radiation without increasing module depth. Mounted solar-cell array is covered with internally reflecting plate. Plate is attached to each cell by transparent adhesive, and space between cells is covered with layer of diffusely reflecting material. Solar energy falling on space between cells is diffused and reflected internally by plate until it is reflected onto solar cell.

Shepard, N. F., Jr.↗
NASA NTRS1980

OM-VPE grown materials for high efficiency solar cells

Organometallic sources are available for all the III-V elements and a variety of dopants; thus it is possible to use the technique to grow a wide variety of semiconductor compounds. AlGaAsSb and AlGaInAs alloys for multijunction monolithic solar cells were grown by OM-VPE. While the effort concentrated on terrestrial applications, the success of OM-VPE grown GaAs/AlGaAs concentrator solar cells (23% at 400 suns) demonstrates that OM-VPE is suitable for growing high efficiency solar cells in large quantities for space applications. In addition, OM-VPE offers the potential for substantial cost reduction of photovoltaic devices with scale up and automation and due to high process yield from reproducible, uniform epitaxial growths with excellent surface morphology.

Saxena, R.↗
NASA NTRS1973

Development of gallium arsenide solar cells

The potential of ion implantation as a means of developing gallium arsenide solar cells with high efficiency performance was investigated. Computer calculations on gallium arsenide cell characteristics are presented to show the effects of surface recombination, junction space-charge recombination, and built-in fields produced by nonuniform doping of the surface region. The fabrication technology is summarized. Electrical and optical measurements on samples of solar cells are included.

Source record↗
NASA NTRS1976

On the determination of series resistance and diode quality factor of solar cells

The series resistance and diode quality factor are used for evaluation of solar cell performance. These parameters are normally deduced from the terminal I-V characteristics under forward bias. The method produces a smaller series resistance and a larger value for diode quality factor than appropriate for the device when operating as a solar cell. It is suggested that the diode quality factor be determined from measured saturated photocurrent, open circuit voltage characteristics and the series resistance be measured with an r-f bridge or calculated from a measurement of the surface sheet resistance.

Anderson, R. L.↗
DOE OSTI2022

Investigation of long-term light stability of negative charge injected into oxide-nitride-oxide passivation stack of crystalline silicon solar cells

A negatively charged oxide-nitride-oxide stack for field-effect passivation of crystalline silicon solar cells is discussed. The negative charge was injected into the stack by a plasma charge injection technology. Charge stability was studied by exposing samples to AM1.5 simulation visible light and full-spectrum light at temperatures ranging from 55 to 78 °C for up to 300 h. Charge injection and loss were quantified based on shifts in the flatband voltage of capacitance–voltage curves measured with a mercury probe. The most probable mechanism of charge loss was found to be diffusion of negative charged hydrogen atoms through nitride and bottom oxide. The optimum recipe for each layer of the stack was investigated to minimize the loss of injected charge. The flatband voltage decay of the optimized stack was found to fit a power-law trend, suggesting the dispersive transport of hydrogen atoms with a dispersion parameter of ~0.06–0.07. The optimized stack is projected to maintain a negative charge density of about 3.6 × 10 12 cm –2 or more after 25 years of field operation in an environment such as Arizona, which would be sufficient for field-effect passivation under one-sun illumination. Furthermore, the high stability of the negative injected charge makes the plasma charging technology a safer and lower cost alternative to Al 2 O 3 -passivation technology commonly used to passivate p-type surfaces.

14 SOLAR ENERGY↗
NASA NTRS1971

Radiation damage and annealing of lithium-doped silicon solar cells

Evidence has been presented that a lithium-diffused crucible-grown silicon solar cell can be made with better efficiency than the flight-quality n p 10 ohms-cm solar cell. When this lithium cell is exposed to a continuous radiation evironment at 60 C (electron spectrum from gamma rays) it has a higher power output than the N/P cell after a fluence equivalent to 1 MeV. A comparison of annealing of proton- and electron-damage in this lithium cell reveals a decidedly faster rate of recovery and higher level of recoverable power from the proton effects. Therefore, the lithium cell shows a good potential for many space missions where the proton flux is a significant fraction of the radiation field to be encountered.

Statler, R. L.↗
NASA NTRS1982

Robot End Effector To Place and Solder Solar Cells

Encapsulated in robot end effector is RF induction-heating coil for heating solar cell while in transit. Holes in encapsulant permit end of unit to act as vacuum pickup to grip solar cell. Use of RF induction heating allows cell to be heated without requiring direct mechanical and thermal contact of bonding tool such as soldering iron.

Hagerty, J. J.↗
DOE OSTI2025

The influence of ambient light spectrum (LED, INC, CFL, Xenon…) on the efficiency of perovskite indoor photovoltaic solar cells for Internet of Things (IoT) applications

This record provides a numerical investigation of a MAGeI₃-based perovskite solar cell with the structure FTO/TiO₂/MAGeI₃/Spiro-OMeTAD, evaluated for both outdoor and indoor light-harvesting applications using the SCAPS-1D simulator. Device performance is analyzed under AM 1.5G sunlight and several artificial light sources, including LED, incandescent, compact fluorescent lamp (CFL), flashlight, and xenon illumination. The study reports initial and optimized power conversion efficiencies and examines the influence of absorber layer thickness and bandgap on device performance under different lighting conditions. The results highlight the potential of MAGeI₃-based perovskite solar cells for indoor energy harvesting and low-power Internet of Things (IoT) applications.

14 SOLAR ENERGY↗
NASA NTRS1985

Two years of on-orbit gallium arsenide performance from the LIPS solar cell panel experiment

The LIPS on-orbit performance of the gallium arsenide panel experiment was analyzed from flight operation telemetry data. Algorithms were developed to calculate the daily maximum power and associated solar array parameters by two independent methods. The first technique utilizes a least mean square polynomial fit to the power curve obtained with intensity and temperature corrected currents and voltages; whereas, the second incorporates an empirical expression for fill factor based on an open circuit voltage and the calculated series resistance. Maximum power, fill factor, open circuit voltage, short circuit current and series resistance of the solar cell array are examined as a function of flight time. Trends are analyzed with respect to possible mechanisms which may affect successive periods of output power during 2 years of flight operation. Degradation factors responsible for the on-orbit performance characteristics of gallium arsenide are discussed in relation to the calculated solar cell parameters. Performance trends and the potential degradation mechanisms are correlated with existing laboratory and flight data on both gallium arsenide and silicon solar cells for similar environments.

Francis, R. W.↗
NASA NTRS1977

Comparative performance of silicon and gallium arsenide solar cells on a high altitude sounding rocket

The use of sounding rockets for calibrating solar cells offers two principal advantages: (1) there is no effect due to the terrestrial atmosphere, and (2) the cells are recoverable immediately after the calibration. On March 30, 1976, 29 n/p silicon and four p/n gallium arsenide solar cells were calibrated in space and successfully recovered from a NASA-Astrobee F rocket that reached a peak altitude of 230 km. Approximately 75 IV characteristic curves were generated for 32 of the cells to an accuracy of plus or minus 0.2 ma and plus or minus 0.2 mV.

Thomas, N. L.↗
DOE OSTI2023

Air-stable ternary organic solar cells achieved by using fullerene additives in non-fullerene acceptor-polymer donor blends

Organic solar cells (OSCs) based on donor–acceptor blends have shown a rapid improvement in power conversion efficiency (PCE) now approaching, for small cells, those of the state-of-the art commercial solar modules. However, performance degradation remains one of the most critical impediments for OSC technology commercialization. Ternary solar cells where a third component, for instance an acceptor, is added to a non-fullerene acceptor–polymer donor blend are an effective approach for improving both OSC efficiency and long-term stability. Here, in this work, we study the role of two fullerene acceptors, ET18 and PCBM, as the third component in P D :Y6 blends. These fullerene derivatives significantly enhance the cell stability, which retained >90% of their initial PCEs (13–14%) even after storage in air for 6 months, compared to only ~20% retention for the binary devices. GIWAXS, AFM, in situ impedance spectroscopy and femtosecond transient absorption spectroscopy measurements reveal that the enhanced stability of the ternary devices results from a more robust blend morphology reducing charge recombination in the ternary devices during aging.

14 SOLAR ENERGY↗
NASA NTRS1979

Solar cell with improved N-region contact and method of forming the same

An improved solar cell, and method of forming the same are disclosed. It is characterized by a semiconductor silicon wafer of P-type material having diffused therein a shallow N-type region. A sintered silver contact is affixed to the surface of the N-type region at the outer surface. The improved solar cell is formulated from silver powder blended with silver metaphosphate for establishing a zone of increased carrier concentration. An aluminum or silver-aluminum alloy contact is affixed to the P-type wafer at the outer surface opposite the N-type region.

Bube, K. R.↗
NASA NTRS1984

A new high-efficiency GaAs solar cell structure using a heterostructure back-surface field

Shallow-homojunction GaAs solar cells are fabricated with a back-surface field (BSF) produced by a GaAs/Al(0.2)Ga(0.8)As heterostructure. These cells exhibit higher open-circuit voltages and conversion efficiencies than control cells made with a p-GaAs/p(+)-GaAs BSF. Conversion efficiencies of over 22 percent (AM1, total area) have been obtained with this new structure. The use of a higher bandgap material below the active region not only provides an enhanced BSF but will also permit the implementation of two solar-cell designs: a GaAs cell with a back-surface reflector and an AlGaAs cell that can be used as the upper cell in tandem configurations.

Gale, R. P.↗
DOE OSTI2021

Comprehensive Performance Calibration Guidance for Perovskites and Other Emerging Solar Cells

Emerging photovoltaic (PV) technologies (e.g., organic, perovskite, and solution processed quantum dot) have attracted remarkable attention with the rapid growth of their efficiencies, and their transition toward commercialization. Accurate and reliable efficiency measurements of these PV technologies are crucial, yet much more complicated than for conventional PV technologies due to the former's pronounced dynamic responses to changes in measurement conditions (e.g., current–voltage (I–V) scan rate and preconditioning) and their susceptibility to degradation. Adjustments to the measurement procedures are therefore necessary so that a reproducible “steady state” is reached during measurement. Furthermore, given the small size of many emerging cells, inappropriate device area definition and solar simulator setup can lead to measurement errors. Here, comprehensive efficiency calibration guidance is offered for emerging solar cells, including area measurement; spectral irradiance translation to standard test conditions; and steady-state electrical performance. The necessity of reporting steady-state efficiency is justified with a statistical performance comparison between conventional and steady-state I–V scans over hundreds of cells the group has received globally for efficiency certifications. The procedures described here do not require specialized measurement instrumentation; what matters most are changes to the measurement protocols. These described changes aim to enable better comparisons between reported efficiencies.

14 SOLAR ENERGY↗
DOE OSTI2023

Nanopinhole Passivating Contact Si Solar Cells Fabricated with Metal-Assisted Chemical Etching

Monocrystalline Si (c-Si) solar cells with passivating contacts based on doped polycrystalline Si (poly-Si) on ≈2.0 nm silicon oxide (SiO x ) require >1000 °C thermal processing to create conducting pinholes in the SiO x layer. However, this high thermal budget can induce bulk defects in the Czochralski c-Si wafers used as the cell absorber layer. We demonstrate that pinholes can instead be created using metal-assisted chemical etching on planar or textured morphologies, at room temperature. This wet process creates up to 200 nm wide conducting pinholes that are directly observed with transmission electron and atomic force microscopies. High-performance hole-selective poly-Si/SiN y /SiO x and electron-selective poly-Si/SiO x passivating contacts are fabricated and implemented in laboratory-scale solar cells. This process development significantly broadens the range of passivation layer materials, their thicknesses, and surface morphologies, which enables the design of poly-Si contacts with superior passivating quality.

14 SOLAR ENERGY↗