Observation of a correlation between twin orientation and substrate step direction in thin GaAs films grown on intentionally misoriented Si (100)
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Rajkumar, K. C.↗
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Infrared response from metallic particles embedded in a single-crystal Si matrix - The layered internal photoemission sensor
Infrared radiation at wavelengths of 1-2 microns has been detected in a new device labeled the layered internal photoemission sensor. The device structure, which is grown by molecular beam epitaxy, incorporates epitaxial CoSi2 particles with dimensions of 10-50 nm. Radiation absorbed by these particles photoexcites carriers into a surrounding single-crystal silicon matrix. A peak quantum efficiency of 1.3 percent is measured, which is approximately six times higher than in planar CoSi2 Schottky diodes with 5-nm silicide thickness.
Fathauer, R. W.↗
High-Power AlGaAs Quantum-Well Lasers On Si Substrates
AlxGa1-xAs lasers of graded-index-of-refraction, separate-confinement-heterostructure, single-quantum-well type fabricated on silicon substrates by migration-enhanced molecular-beam epitaxy followed by metalorganic vapor-phase epitaxy. They are intermediate products of continuing effort to develop low-threshold-current, high-efficiency lasers for parallel optical interconnections between large-scale optoelectronic integrated circuits.
Kim, Jae-Hoon↗
Si(1-x)Ge(x)/Si Infrared Photodiodes
Cutoff wavelengths depend on x and also adjusted somewhat via reverse bias. Si1-xGex photodiodes with cutoff wavelengths in and beyond practically important range of 8 to 12 micrometers made by molecular-beam epitaxy. Compatible (in terms of fabrication processes) with silicon readout circuitry, exhibit long-term stability, manufactured with sufficient uniformity for use in focal-plane arrays; and operate at temperatures approximately greater than 65 K, for which temperatures small, portable refrigerators available.
Lin, True-Lon↗
Heteroepitaxial InP solar cells on Si and GaAs substrates
The characteristics of InP cells processed from thin layers of InP heteroepitaxially grown on GaAs, on silicon with an intervening GaAs layer, and on GaAs with intervening Ga(x)In(1-x)As layers are described, and the factors affecting cell efficiency are discussed. Under 10 MeV proton irradiations, the radiation resistances of the heteroepitaxial cells were superior to that of homoepitaxial InP cells. The superior radiation resistance is attributed to the high dislocation densities present in the heteroepitaxial cells.
Weinberg, Irving↗
Tensile deformation of 2618 and Al-Fe-Si-V aluminum alloys at elevated temperatures
The present study experimentally characterizes the effects of elevated temperature on the uniaxial tensile behavior of ingot metallurgy 2618 Al alloy and the rapidly solidified FVS 0812 P/M alloy by means of two constitutive formulations: the Ramberg/Osgood equation and the Bodner-Partom (1975) incremental formulation for uniaxial tensile loading. The elastoplastic strain-hardening behavior of the ingot metallurgy alloy is equally well represented by either formulation. Both alloys deform similarly under decreasing load after only 1-5 percent uniform tensile strain, a response which is not described by either constitutive relation.
Leng, Y.↗
Effects of radiation of InP cells epitaxially grown on Si and GaAs substrates
The properties of heteroepitaxial InP cells were determined both before and after 10-MeV proton irradiations. Numerical values, obtained for the diffusion and recombination components of the reverse saturation currents, were found to be consistent with the distribution of dislocations. The radiation resistance of the heteroepitaxial cells was significantly greater than that observed for n/p homoepitaxial InP cells. The carrier removal rate, obtained by C-V measurements, was 1800/cm for 10-MeV protons compared with 2.2/cm for 1-MeV electrons. The high carrier removal rate was found to have no significant effect on the cell's series resistance. It was concluded that the heteroepitaxial cell performance is dominated by the high dislocation density attributable to lattice constant mismatch. Although the efficiencies of the present cells are low, the recent achievement of 13.7 percent AM0 efficiencies using a GaAs substrate demonstrates the marked improvement that can be attained using more appropriate transition layers.
Weinberg, I.↗
Effect of Threading Dislocations on GaInP Front- and Rear-Junction Solar Cells Grown on Si
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Brian Li↗
Study of temperature-dependent ultrathin oxide growth on Si(111) using variable-angle spectroscopic ellipsometry
The monolayer-sensitive variable-angle spectroscopic ellipsometry technique was used to study the temperature-dependent growth mechanisms of an ultrathin oxide layer on top of silicon. The oxidation was done in atomic oxygen produced in a pure oxygen plasma and driven by an RF power source. The results have been compared with the recently proposed model of Murali and Murarka for ultrathin oxide growth on top of silicon. The activation energies of different growth parameters associated with the oxide growth have also been determined.
De, Bhola N.↗
Study of the Staebler-Wronski degradation effect in a-Si:H based p-i-n solar cell
Conversion of solar energy into electricity using environmentally safe and clean photovoltaic methods to supplement the ever increasing energy needs has been a cherished goal of many scientists and engineers around the world. Photovoltaic solar cells on the other hand, have been the power source for satellites ever since their introduction in the early sixties. For widespread terrestrial applications, however, the cost of photovoltaic systems must be reduced considerably. Much progress has been made in the recent past towards developing economically viable terrestrial systems, and the future looks highly promising. Thin film solar cells offer cost reductions mainly from their low processing cost, low material cost, and choice of low cost substrates. These are also very attractive for space applications because of their high power densities (power produced per kilogram of solar cell pay load) and high radiation resistance. Amorphous silicon based solar cells are amongst the top candidates for economically viable terrestrial and space based power generation. Despite very low federal funding during the eighties, amorphous silicon solar cell efficiencies have continually been improved - from a low 3 percent to over 13 percent now. Further improvements have been made by the use of multi-junction tandem solar cells. Efficiencies close to 15 percent have been achieved in several labs. In order to be competitive with fossil fuel generated electricity, it is believed that module efficiency of 15 percent or cell efficiency of 20 percent is required. Thus, further improvements in cell performance is imperative. One major problem that was discovered almost 15 years ago in amorphous silicon devices is the well known Staebler-Wronski Effect. Efficiency of amorphous silicon solar cells was found to degrade upon exposure to sunlight. Until now their is no consensus among the scientists on the mechanism for this degradation. Efficiency may degrade anywhere from 10 percent to almost 50 percent within the first few months of operation. In order to improve solar cell efficiencies, it is clear that the cause or causes of such degradation must be found and the processing conditions altered to minimize the loss in efficiency. This project was initiated in 1987 to investigate a possible link between metallic impurities, in particular, Ag, and this degradation. Such a link was established by one of the NASA scientists for the light induced degradation of n+/p crystalline silicon solar cells.
Naseem, H. A.↗
High frequency performance of Si(1-x)Ge(x)/Si(1-y)Ge(y)/Si(1-x)Ge(x) HBTs
The results of a theoretical study of the performance of high speed SiGe HBTs is presented. The study includes a group of SiGe HBTs in which the Ge concentration in the base is 20 percent higher than that in the emitter and collector (i.e., y = x + 0.2). It is shown that the composition dependences of f(T) and the f(max) are nonmonotonic. As the Ge composition in the emitter and collector layers is increased, f(T) and f(max) first decrease, then remain constant and finally increase to attain their highest values.
Rosenfeld, D.↗
Advanced Si IR detectors using molecular beam epitaxy
SiGe/Si heterojunction internal photoemission (HIP) long wavelength infrared (LWIR) detectors have been fabricated by MBE. The SiGe/Si HIP detector offers a tailorable spectral response in the long wavelength infrared regime by varying the SiGe/Si heterojunction barrier. Degenerately doped p(+) SiGe layers were grown using elemental boron, as the dopant source allows a low growth temperature. Good crystalline quality was achieved for boron-doped SiGe due to the reduced growth temperature. The dark current density of the boron-doped HIP detectors was found to be thermionic emission limited. HIP detectors with a 0.066 eV were fabricated and characterized using activation energy analysis, corresponding to a 18 micron cutoff wavelength. Photoresponse of the detectors at wavelengths ranging from 2 to 12 microns has been characterized with corresponding quantum efficiencies of 5 - 0.1 percent.
Lin, T. L.↗
Ceramic fibers from Si-B-C polymer precursors
Non-oxide ceramics such as silicon carbide (SiC), silicon nitride (Si3N4), and silicon borides (SiB4, SiB6) have thermal stability, oxidation resistance, hardness, and varied electrical properties. All these materials can be prepared in a fiber form from a suitable polymer precursor. The above mentioned fibers, when tested over a temperature range from 25 to 1400 C, experience degradation at elevated temperatures. Past work in ceramic materials has shown that the strength of ceramics containing both carbides and borides is sustained at elevated temperatures, with minimum oxidation. The work presented here describes the formation of ceramic fibers containing both elements, boron and silicon, prepared via the polymer precursor route previously reported by the authors, and discusses the fiber mechanical properties that are retained over the temperature range studied.
Riccitiello, S. R.↗
Using Si Diodes To Detect H2 Liquid/Vapor Interfaces
Commercially available silicon-diode temperature sensors used to detect interfaces between hydrogen liquid and hydrogen vapor at steady-state saturation conditions. Sensors mounted at short intervals along rod to form rake-like array. Array inserted in tank with rod oriented vertically, where it senses level of liquid hydrogen to resolution equal to interval between sensors. Basic idea to measure voltage across sensor while supplying small electric current that heats sensor. Because vapor cools sensor less effectively than liquid does, sensor's steady-state temperature greater when sensor surrounded by vapor than when immersed in liquid. Voltage output decreases as temperature increases for silicon diodes. Thus, temperature (voltage) reading used to determine whether liquid level above or below sensor.
Dempsey, Paula Jean↗
Investigation of the radiation resistance of triple-junction a-Si:H alloy solar cells irradiated with 1.00 MeV protons
The effect of 1.00 MeV proton irradiation on hydrogenated amorphous silicon alloy triple-junction solar cells is reported for the first time. The cells were designed for radiation resistance studies and included 0.35 cm(sup 2) active areas on 1.0 by 2.0 cm(sup 2) glass superstrates. Three cells were irradiated through the bottom contact at each of six fluences between 5.10E12 and 1.46E15 cm(sup -2). The effect of the irradiations was determined with light current-voltage measurements. Proton irradiation degraded the cell power densities from 8.0 to 98 percent for the fluences investigated. Annealing irradiated cells at 200 C for two hours restored the power densities to better than 90 percent. The cells exhibited radiation resistances which are superior to cells reported in the literature for fluences less than 1E14 cm(sup -2).
Lord, Kenneth R., II↗
Molecular abundances and low-mass star formation. 1: Si- and S-bearing species toward IRAS 16293-2422
Results from millimeter and submillimeter spectral line surveys of the protobinary source Infrared Astronomical Satellite (IRAS) 16293-2422 are presented. Here we outline the abundances of silicon- and sulfur-containing species. A combination of rotation diagram and full statistical equilibrium/radiative transfer calculations is used to constrain the physical conditions toward IRAS 16293 and to construct its beam-averaged chemical composition over a 10 to 20 sec (1600 to 3200 AU) scale. The chemical complexity as judged by species such as SiO, OCS, and H2S, is intermediate between that of dark molecular clouds such as L134N and hot molecular cloud cores such as Orion KL. From the richness of the spectra compared to other young stellar objects of similar luminosity, it is clear that molecular abundances do not scale simply with mass; rather, the chemistry is a strong function of evolutionary state, i.e., age.
Blake, Geoffrey A.↗
IR Interference Filters Made Of Al Patterns On Si Substrates
Filters relatively thin and better accommodate convergent infrared beams. Infrared (IR) interference filters with pass bands centered at wavelength of about 70 micrometer made in form of aluminum patterns 1,000 Angstrom thick on both sides of silicon substrates 12 to 15 micrometer thick. Substrates, in turn, mounted on silicon frames 0.2 millimeter thick. Prototypes of class of miniature band-pass infrared filters small enough to be bonded to, and cooled with, infrared detectors.
Ksendzov, Alexander↗
Three-color resonance ionization spectroscopy of Zr in Si
As our society becomes technologically more complex, computers are being used in greater and greater numbers of high consequence systems. Giving a machine control over the lives of humans can be disturbing, especially if the software that is run on such a machine has bugs. Formal reasoning is one of the most powerful techniques available to demonstrate the correctness of a piece of software. When reasoning about software and its development, one frequently encounters expressions that contain partial functions. As might be expected, the presence of partial functions introduces an additional dimension of difficulty to the reasoning framework. This difficulty produces an especially strong impact in the case of high consequence systems. An ability to use formal methods for constructing software is essential if we want to obtain greater confidence in such systems through formal reasoning. This is only reasonable under automation of software development and verification. However, the ubiquitous presence of partial functions prevents a uniform application to software of any tools not specifically accounting for partial functions. In this paper we will describe a framework for reasoning about software, based on the nonstrict explicit domain approach, that is applicable to a large class of software/hardware systems. In this framework the Hoare triples containing partial functions can be reasoned about automatically in a well-defined and uniform manner.
Hansen, C. S.↗