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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,351 records · Page 75
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Study of the generator/motor operation of induction machines in a high frequency link space power system

Static power conversion systems have traditionally utilized dc current or voltage source links for converting power from one ac or dc form to another since it readily achieves the temporary energy storage required to decouple the input from the output. Such links, however, result in bulky dc capacitors and/or inductors and lead to relatively high losses in the converters due to stresses on the semiconductor switches. The feasibility of utilizing a high frequency sinusoidal voltage link to accomplish the energy storage and decoupling function is examined. In particular, a type of resonant six pulse bridge interface converter is proposed which utilizes zero voltage switching principles to minimize switching losses and uses an easy to implement technique for pulse density modulation to control the amplitude, frequency, and the waveshape of the synthesized low frequency voltage or current. Adaptation of the proposed topology for power conversion to single-phase ac and dc voltage or current outputs is shown to be straight forward. The feasibility of the proposed power circuit and control technique for both active and passive loads are verified by means of simulation and experiment.

Lipo, Thomas A.↗
NASA NTRS2006

Silicon Carbide Technology

Silicon carbide based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified.

Neudeck, Philip G.↗
NASA NTRS1998

SiC Technology

Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching [1- 4] for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications [5-7] to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be realized in experimental SiC devices, primarily due to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems [9]. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high temperature and/or high power SiC electronics are identified.

Neudeck, Philip G.↗
DOE OSTI2018

Resonator Stabilization Architecture to Suppress Switching Transient Crosstalk in I-CDM

The ever-increasing sizes of transition-edge sensor (TES) microcalorimeter arrays motivates improved multiplexed readout with large multiplexing factors, low power dissipation, and low levels of crosstalk. Current-summed code division multiplexing (I-CDM) has been proposed as an alternative to flux-summed code division multiplexing (Φ-CDM) because of its lower power dissipation and greater robustness against the failure of individual readout elements. Simulating I-CDM arrays, we find that unswitched circuit components provide a mechanism for crosstalk, the magnitude of which is determined by their inductance. To mitigate this source of crosstalk, we propose a technique called resonator-stabilized I-CDM (RI-CDM), which the simulations predict will reduce crosstalk by an order of magnitude. RI-CDM reads out dc-biased TESs on an amplitude-modulated carrier wave.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Alternating Current Photovoltaic Effect

It is well known that the photovoltaic effect produces a direct current (DC) under solar illumination owing to the directional separation of light-excited charge carriers at the p–n junction, with holes flowing to the p-side and electrons flowing to the n-side. In this study, we found that apart from the DC generated by the conventional p–n photovoltaic effect, there is another new type of photovoltaic effect that generates alternating current (AC) in the nonequilibrium states when the illumination light periodically shines at the junction/interface of materials. The peak current of AC at high switching frequency can be much higher than that from DC. The AC cannot be explained by the established mechanisms for conventional photovoltaics; instead, it is suggested to be a result of the relative shift and realignment between the quasi-Fermi levels of the semiconductors adjacent to the junction/interface under the nonequilibrium conditions, which results in electron flow in the external circuit back and forth to balance the potential difference between two electrodes. By virtue of this effect, the device can work as a high-performance broadband photodetector with extremely high sensitivity under zero bias; it can also work as a remote power source providing extra power output in addition to the conventional photovoltaic effect.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Mechanistic Comparison between Gastric Bypass vs. Duodenal Switch with Sleeve Gastrectomy in Rat Models

Both gastric bypass (GB) and duodenal switch with sleeve gastrectomy (DS) have been widely used as bariatric surgeries, and DS appears to be superior to GB. The aim of this study was to better understand the mechanisms leading to body weight loss by comparing these two procedures in experimental models of rats. Animals were subjected to GB, DS or laparotomy (controls), and monitored by an open-circuit indirect calorimeter composed of comprehensive laboratory animal monitoring system and adiabatic bomb calorimeter. Body weight loss was greater after DS than GB. Food intake was reduced after DS but not GB. Energy expenditure was increased after either GB or DS. Fecal energy content was increased after DS but not GB. GB induced body weight loss by increasing energy expenditure, whereas DS induced greater body weight loss by reducing food intake, increasing energy expenditure and causing malabsorption in rat models.

59 BASIC BIOLOGICAL SCIENCES↗
NASA NTRS1985

Evaluation of semiconductor devices for Electric and Hybrid Vehicle (EHV) ac-drive applications, volume 1

The results of evaluation of power semiconductor devices for electric hybrid vehicle ac drive applications are summarized. Three types of power devices are evaluated in the effort: high power bipolar or Darlington transistors, power MOSFETs, and asymmetric silicon control rectifiers (ASCR). The Bipolar transistors, including discrete device and Darlington devices, range from 100 A to 400 A and from 400 V to 900 V. These devices are currently used as key switching elements inverters for ac motor drive applications. Power MOSFETs, on the other hand, are much smaller in current rating. For the 400 V device, the current rating is limited to 25 A. For the main drive of an electric vehicle, device paralleling is normally needed to achieve practical power level. For other electric vehicle (EV) related applications such as battery charger circuit, however, MOSFET is advantageous to other devices because of drive circuit simplicity and high frequency capability. Asymmetrical SCR is basically a SCR device and needs commutation circuit for turn off. However, the device poses several advantages, i.e., low conduction drop and low cost.

Lee, F. C.↗
NASA NTRS2003

Single Event Effects Testing of the Linfinity SG1525A Pulse Width Modulator Controller

Pulse Width Modulator (PWM) Controllers are the heart of switching power supply systems in development today. The PWMs considered here have the same integration advantages as many other controllers but it also includes the interface drivers for the follow-on power Field Effect Transistors (FET). Previous work on these types of devices looked into the required test methodologies [ 11 and the impact of radiation on the soft start and shutdown circuits of typically incorporated in the technology [2]. Taking advantage of this previous work this study was undertaken to determine the single event destructive and transient susceptibility of the Linfinity SG1525A Pulse Width Modulator Controller. The device was monitored for transient interruptions in the output signals and for destructive events induced by exposing it to a heavy ion beam at the Texas A&M University Cyclotron Single Event Effects Test Facility. After exposing these devices to the beam, a new upset mode has been identified that can lead to catastrophic power supply system failure if this event would occur while drive power FETs off the two device outputs. The devices and the test methods used will be described first. This will be followed by a brief description of the data collected to date (not all data can be presented with the length constraints of the summary) and a summary of the key results.

Howard, J. W., Jr.↗
DOE OSTI2021

Low modulation index 3-phase solid state transformer

A solid-state transformer (SST) comprises a transformer core, a primary winding, a secondary winding, a primary-side switch bank, and a secondary-side switch bank. Each of the switch banks includes six 4-quadrant switches. The twelve 4-quadrant switches are toggled on and off over six clock cycles in a repetitive sequence with a period that is a function of a desired operating frequency of the transformer. The sequence is configured such that at any given time, 2 of 3 input and output phases are connected to the primary and secondary windings. The SST further includes L-C filter circuits that are configured to filter high-frequency components of current and voltage waveforms such that these components are not back-fed to the electrical mains or delivered to a load. The SST includes a primary-side filter circuit and a secondary-side filter circuit that can each include respective L-C filters for three input or output phases.

Koplow, Jeffrey P.↗
DOE OSTI2018

Memristive Ion Channel-Doped Biomembranes as Synaptic Mimics

Solid-state neuromorphic systems based on transistors or memristors have yet to achieve the interconnectivity, performance, and energy efficiency of the brain due to excessive noise, undesirable material properties, and nonbiological switching mechanisms. Here in this work, we demonstrate that an alamethicin-doped, synthetic biomembrane exhibits memristive behavior, emulates key synaptic functions including paired-pulse facilitation and depression, and enables learning and computing. Unlike state-of-the-art devices, our two-terminal, biomolecular memristor features similar structure (biomembrane), switching mechanism (ion channels), and ionic transport modality as biological synapses while operating at considerably lower power. The reversible and volatile voltage-driven insertion of alamethicin peptides into an insulating lipid bilayer creates conductive pathways that exhibit pinched current–voltage hysteresis at potentials above their insertion threshold. Moreover, the synapse-like dynamic properties of the biomolecular memristor allow for simplified learning circuit implementations. Finally, low-power memristive devices based on stimuli-responsive biomolecules represent a major advance toward implementation of full synaptic functionality in neuromorphic hardware.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Los Alamos works on a biologically realistic computer network

Brain neuroscientists and computer scientists call this field neuromimetic computing—building computers inspired by how the cerebral cortex of the brain works. Its cortical processes rely on billions of small biological “switches,” called neurons. To learn, they store and process information. Using an approach called neural networks, researchers are developing computers that simulate neurons and their interconnections. Then computers can learn about their surroundings, interpret data, and make predictions based on it. In practice, however, researchers attempting to simulate neural processing at anything close to the scale and complexity of the brain’s cortical circuits have been stymied by limitations on computer memory and computational power. All that has changed with the new Trinity supercomputer at Los Alamos, which became fully operational in mid-2017. Trinity has unique capabilities designed for the stockpile stewardship mission, which includes highly complex nuclear simulations that have replaced the testing of nuclear weapons. All this capability means Trinity allows a fundamentally different approach to large-scale cortical simulations, enabling an unprecedented leap in the ability to model neural processing. To test that capability on a limited-scale problem, computer scientists and neuroscientists at Los Alamos created a “sparse prediction machine” that runs on a neural network on Trinity. A sparse prediction machine is designed to work like the brain: researchers expose it to data—in this case, various videos of a car driving down a road—without labeling the data in any way. Then the program sorts through that data frame by frame, focuses on the important information, and develops a prediction about the car’s motion. With Trinity’s power, the Los Alamos team simulates the way a brain handles information in its neurons but uses the fewest neurons at any given moment to explain the information at hand. That’s the “sparse” part, and it makes the brain very efficient—and, hopefully, a computer more efficient, too.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2010

Compact, Interactive Electric Vehicle Charger: Gallium-Nitride Switch Technology for Bi-directional Battery-to-Grid Charger Applications

ADEPT Project: HRL Laboratories is using gallium nitride (GaN) semiconductors to create battery chargers for electric vehicles (EVs) that are more compact and efficient than traditional EV chargers. Reducing the size and weight of the battery charger is important because it would help improve the overall performance of the EV. GaN semiconductors process electricity faster than the silicon semiconductors used in most conventional EV battery chargers. These high-speed semiconductors can be paired with lighter-weight electrical circuit components, which helps decrease the overall weight of the EV battery charger. HRL Laboratories is combining the performance advantages of GaN semiconductors with an innovative, interactive battery-to-grid energy distribution design. This design would support 2-way power flow, enabling EV battery chargers to not only draw energy from the power grid, but also store and feed energy back into it.

ADEPT↗
NASA NTRS2016

Reliability and Maintainability Analysis for the Amine Swingbed Carbon Dioxide Removal System

I have performed a reliability & maintainability analysis for the Amine Swingbed payload system. The Amine Swingbed is a carbon dioxide removal technology that has gone through 2,400 hours of International Space Station on-orbit use between 2013 and 2016. While the Amine Swingbed is currently an experimental payload system, the Amine Swingbed may be converted to system hardware. If the Amine Swingbed becomes system hardware, it will supplement the Carbon Dioxide Removal Assembly (CDRA) as the primary CO2 removal technology on the International Space Station. NASA is also considering using the Amine Swingbed as the primary carbon dioxide removal technology for future extravehicular mobility units and for the Orion, which will be used for the Asteroid Redirect and Journey to Mars missions. The qualitative component of the reliability and maintainability analysis is a Failure Modes and Effects Analysis (FMEA). In the FMEA, I have investigated how individual components in the Amine Swingbed may fail, and what the worst case scenario is should a failure occur. The significant failure effects are the loss of ability to remove carbon dioxide, the formation of ammonia due to chemical degradation of the amine, and loss of atmosphere because the Amine Swingbed uses the vacuum of space to regenerate the Amine Swingbed. In the quantitative component of the reliability and maintainability analysis, I have assumed a constant failure rate for both electronic and nonelectronic parts. Using this data, I have created a Poisson distribution to predict the failure rate of the Amine Swingbed as a whole. I have determined a mean time to failure for the Amine Swingbed to be approximately 1,400 hours. The observed mean time to failure for the system is between 600 and 1,200 hours. This range includes initial testing of the Amine Swingbed, as well as software faults that are understood to be non-critical. If many of the commercial parts were switched to military-grade parts, the expected mean time to failure would be 2,300 hours. Both calculated mean times to failure for the Amine Swingbed use conservative failure rate models. The observed mean time to failure for CDRA is 2,500 hours. Working on this project and for NASA in general has helped me gain insight into current aeronautics missions, reliability engineering, circuit analysis, and different cultures. Prior my internship, I did not have a lot knowledge about the work being performed at NASA. As a chemical engineer, I had not really considered working for NASA as a career path. By engaging in interactions with civil servants, contractors, and other interns, I have learned a great deal about modern challenges that NASA is addressing. My work has helped me develop a knowledge base in safety and reliability that would be difficult to find elsewhere. Prior to this internship, I had not thought about reliability engineering. Now, I have gained a skillset in performing reliability analyses, and understanding the inner workings of a large mechanical system. I have also gained experience in understanding how electrical systems work while I was analyzing the electrical components of the Amine Swingbed. I did not expect to be exposed to as many different cultures as I have while working at NASA. I am referring to both within NASA and the Houston area. NASA employs individuals with a broad range of backgrounds. It has been great to learn from individuals who have highly diverse experiences and outlooks on the world. In the Houston area, I have come across individuals from different parts of the world. Interacting with such a high number of individuals with significantly different backgrounds has helped me to grow as a person in ways that I did not expect. My time at NASA has opened a window into the field of aeronautics. After earning a bachelor's degree in chemical engineering, I plan to go to graduate school for a PhD in engineering. Prior to coming to NASA, I was not aware of the graduate Pathways program. I intend to apply for the graduate Pathways program as positions are opened up. I would like to pursue future opportunities with NASA, especially as my engineering career progresses.

Dunbar, Tyler↗
DOE OSTI2024

Modular DC circuit breaker with integrated energy storage for future DC networks

A T-breaker is an all-in-one solution for dc microgrid fault protection, power flow control, and power quality improvement. A T-breaker features a modular multilevel “T” structure with integrated energy storage devices. The two horizontal arms of the T-breaker realize fault current breaking, load voltage compensation, and power flow control; and the vertical arm of the T-breaker realizes shunt compensation. The configuration provides excellent voltage scalability and relaxes the requirements on the switching signal synchronization during fault transients. The local energy storage in sub-modules eases the fault energy dissipation requirement placed on the traditionally-adopted surge arrestors. The modular multilevel structure also offers immense control flexibility for all types of targeted functions of the provided T-breaker.

Wang, Jin↗
NASA NTRS2004

Development of Electronic Load Controllers for Free-Piston Stirling Convertors Aided by Stirling Simulation Model

The free-piston Stirling convertor end-to-end modeling effort at the NASA Glenn Research Center has produced a software-based test bed in which free-piston Stirling convertors can be simulated and evaluated. The simulation model includes all the components of the convertor: the Stirling cycle engine, heat source, linear alternator, controller, and load. So far, it has been used in evaluating the performance of electronic controller designs. Three different controller design concepts were simulated using the model: 1) Controllers with parasitic direct current loading. 2) Controllers with parasitic alternating current loading. 3) Controllers that maintain a reference current. The free-piston Stirling convertor is an electromechanical device that operates at resonance. It is the function of the electronic load controller to ensure that the electrical load seen by the machine is always great enough to keep the amplitude of the piston and alternator oscillation at the rated value. This is done by regulating the load on the output bus. The controller monitors the instantaneous voltage, regulating it by switching loads called parasitic loads onto the bus whenever the bus voltage is too high and removing them whenever the voltage is too low. In the first type of controller, the monitor-ing and switching are done on the direct-current (dc) bus. In the second type, the alternating current bus is used. The model allows designers to test a controller concept before investing time in hardware. The simulation code used to develop the model also offers detailed models of digital and analog electronic components so that the resulting designs are realistic enough to translate directly into hardware circuits.

Regan, Timothy F.↗
NASA NTRS2025

System for Long-Duration Electrical Testing of SiC IC Generation 12 Chips at 500 °C

The system described in this report is an improved testing rig designed to enhance measurement flexibility, provide a compact oven footprint, and reduce costs for parallel oven-testing silicon carbide (SiC) integrated circuit devices at 500 °C for long durations (greater than 100 h). The testing rig design was characterized in terms of the ovens’ internal and external temperatures, system noise, and the leakage properties of their substrate/inner boards, where the devices under test (DUTs) reside. The test rig employs a National Instruments (NI) Peripheral Component Interconnect eXtensions for Instrumentation (PXI) measurement system, room-temperature pin-switching/customizing boards, and high-temperature compact ovens.

Stephanie Booth↗
DOE OSTI2024

Unraveling the Highly Plastic Behavior of ALD-Aluminum Oxide Encapsulations by Small-Scale Tensile Testing

We present a study directly measuring the electron-beam-induced plasticity of amorphous Al 2 O 3 coatings. Core–shell nanostructures are employed as small-scale model systems for two-dimensional coatings made by atomic layer deposition (ALD). Copper nanowires (NWs) are used as substrates for ALD deposition, representing a model system for interconnects commonly found in integrated circuits. Experiments are performed in situ in a transmission electron microscope (TEM) and further analyzed with electron energy loss spectroscopy (EELS). Our in situ TEM tensile experiments reveal the highly plastic behavior of the ALD shell, which withstands a maximum strain of 188%. Comparable samples under beam-off conditions show a brittle fracture, which underlines the effect of electron irradiation. The electron-beam-activated bond switching within the amorphous network enables compensation of the applied tensile strain, leading to viscous flow. By incorporating an intermediate nanocrystalline layer within the Al 2 O 3 shell, the plasticity is suppressed and brittle fracture occurs. This work directly demonstrates the tuning of mechanical properties in amorphous ALD structures through electron irradiation.

36 MATERIALS SCIENCE↗
NASA NTRS1974

Voltage-spike analysis for a free-running parallel inverter

Unwanted and sometimes damaging high-amplitude voltage spikes occur during each half cycle in many transistor saturable-core inverters at the moment when the core saturates and the transistors switch. The analysis shows that spikes are an intrinsic characteristic of certain types of inverters even with negligible leakage inductance and purely resistive load. The small but unavoidable after-saturation inductance of the saturable-core transformer plays an essential role in creating these undesired thigh-voltage spikes. State-plane analysis provides insight into the complex interaction between core and transistors, and shows the circuit parameters upon which the magnitude of these spikes depends.

Lee, F. C. Y.↗