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At least 1,351 records · Page 75
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

A Framework to Demonstrate a DNP3 Interface With a CIM-Based Data Integration Platform: Preprint

The contemporary electrical grid is characterized by its complexity and abundance of data. A control-rich environment supported by information and communication technologies within an Advanced Distribution Management System (ADMS) presents a viable and cost-effective option for utility companies aiming to implement advanced real-time analytical schemes for monitoring and remotely controlling distribution feeders. Modular platform-based approaches to distribution operations require a structured framework for acquiring field device measurements, performing analytics, converting the setpoint to the correct protocol, and sending it on the appropriate communications network to the field devices. We present the development and deployment of an application service to integrate an open-source standardsbased platform with an ADMS test bed with field devices using the Distributed Network Protocol (DNP3) for data exchange. The step-by-step procedure for establishing the DNP3-Master service on an open-source distribution platform is outlined, comprehensively explaining the Master setup process. Moreover, sample use case results highlight the capabilities of the DNP3- Master service setup. Results demonstrate the scalability and configurability of the DNP3-Master service, making it adaptable for integration with other relevant applications, thus providing potential opportunities for real-world field trials and real-time assessments.

ADMS↗
DOE OSTI2012

Heavy ion beam probe advances from the first installation of the diagnostic on an RFP (invited)

Heavy ion beam probes have been installed on a variety of toroidal devices, but the first and only application on a reversed field pinch is the diagnostic on the Madison Symmetric Torus. Simultaneous measurements of spatially localized equilibrium potential and fluctuations of density and potential, previously inaccessible in the core of the reversed field pinch (RFP), are now attainable. These measurements reflect the unique strength of the heavy ion beam probe (HIBP) diagnostic. They will help determine the characteristics and evolution of electrostatic fluctuations and their role in transport, and determine the relation of the interior electric field and flows. Many aspects of the RFP present original challenges to HIBP operation and inference of plasma quantities. The magnetic field contributes to a number of the issues: the comparable magnitudes of the toroidal and poloidal fields and edge reversal result in highly three-dimensional beam trajectories; partial generation of the magnetic field by plasma current cause it and hence the beam trajectories to vary with time; and temporal topology and amplitude changes are common. Associated complications include strong ultraviolet radiation and elevated particle losses that can alter functionality of the electrostatic systems and generate noise on the detectors. These complexities have necessitated the development of new operation and data analysis techniques: the implementation of primary and secondary beamlines, adoption of alternative beam steering methods, development of higher precision electrostatic system models, refinement of trajectory calculations and sample volume modeling, establishment of stray particle and noise reduction methods, and formulation of alternative data analysis techniques. These innovative methods and the knowledge gained with this system are likely to translate to future HIBP operation on large scale stellarators and tokamaks.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

AlGaN High Electron Mobility Transistor for High-Temperature Logic

Here we report on AlGaN high electron mobility transistor (HEMT)-based logic development, using combined enhancement- and depletion-mode transistors to fabricate inverters with operation from room temperature up to 500°C. Our development approach included: (a) characterizing temperature-dependent carrier transport for different AlGaN HEMT heterostructures, (b) developing a suitable gate metal scheme for use in high temperatures, and (c) over-temperature testing of discrete devices and inverters. Hall mobility data (from 30°C to 500°C) revealed the reference GaN-channel HEMT experienced a 6.9x reduction in mobility, whereas the AlGaN channel HEMTs experienced about a 3.1x reduction. Furthermore, a greater aluminum contrast between the barrier and channel enabled higher carrier densities in the two-dimensional electron gas for all temperatures. The combination of reduced variation in mobility with temperature and high sheet carrier concentration showed that an Al-rich AlGaN-channel HEMT with a high barrier-to-channel aluminum contrast is the best option for an extreme temperature HEMT design. Three gate metal stacks were selected for low resistivity, high melting point, low thermal expansion coefficient, and high expected barrier height. The impact of thermal cycling was examined through electrical characterization of samples measured before and after rapid thermal anneal. The 200-nm tungsten gate metallization was the top performer with minimal reduction in drain current, a slightly positive threshold voltage shift, and about an order of magnitude advantage over the other gates in on-to-off current ratio. After incorporating the tungsten gate metal stack in device fabrication, characterization of transistors and inverters from room temperature up to 500°C was performed. The enhancement-mode (e-mode) devices’ resistance started increasing at about 200°C, resulting in drain current degradation. This phenomenon was not observed in depletion-mode (d-mode) devices but highlights a challenge for inverters in an e-mode driver and d-mode load configuration.

42 ENGINEERING↗
DOE OSTI2019

Development of Irradiation Test Devices for Transient Testing

The Transient Reactor Test facility (TREAT) resumed operations in 2017 in order to reclaim its crucial role in nuclear-heated fuel safety research. TREAT’s historic era of operation (1959-1994) was best known for integral-scale testing of large fuel specimens/bundles under postulated reactor plant accident conditions, but TREAT also supported smaller-scale phenomena identification tests that elucidated fundamental behaviors and paved the way for these integral-scale tests. Advances in modern computational capabilities and a resurgence of interest in novel reactor technologies have created an opportunity for emphasizing modernized science-based and separate effects tests once again at TREAT. An innovative approach to this type of testing has been developed to leverage minor radioactivity built-in during brief TREAT irradiations by arranging smaller fuel specimens in low activation hardware so that they can be easily extracted and shipped for post irradiation examination within weeks. This recently-established capability, termed the Minimal Activation Retrievable Capsule Holder (MARCH) irradiation vehicle system, includes capabilities for cost-effective simplified-environment testing of centimeter-scale fuel samples of various geometries, temperature-controlled irradiations of millimeter-size samples for lower-length-scale model development, liquid-metal bonded heat sink capsules for controlling transient temperature response in fuel rodlets, and an innovative approach to high throughput irradiation of transient sensors and instrumentation. The MARCH system’s capabilities will also set the foundation for fuel safety research performed in larger integral-scale test devices with coolant environments representing reactor plants. Based upon historic approaches, but modernized to meet current nuclear technology needs, these larger irradiation devices include flowing pressurized water (including the ability to depressurize to steam) as well liquid metal cooling loops for various fuel rod and small bundle specimens. Here, this paper describes the recently-established MARCH system and current trajectory to enabling advanced transient science with a suite of irradiation test devices.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2012

From spin induced ferroelectricity to dipolar glasses: Spinel chromites and mixed delafossites

Magnetoelectric multiferroics showing coupling between polarization and magnetic order are attracting much attention. For instance, they could be used in memory devices. Metal-transition oxides are provided several examples of inorganic magnetoelectric multiferroics. In the present short review, spinel and delafossite chromites are described. For the former, an electric polarization is evidenced in the ferrimagnetic state for ACr{sub 2}O{sub 4} polycrystalline samples (A=Ni, Fe, Co). The presence of a Jahn-Teller cation such as Ni{sup 2+} at the A site is shown to yield larger polarization values. In the delafossites, substitution by V{sup 3+} at the Cr or Fe site in CuCrO{sub 2} (CuFeO{sub 2}) suppresses the complex antiferromagnetic structure at the benefit of a spin glass state. The presence of cation disorder, probed by transmission electron microscopy, favors relaxor-like ferroelectricity. The results on the ferroelectricity of ferrimagnets and insulating spin glasses demonstrate that, in this research field, transition-metal oxides are worth to be studied. - Graphical abstract: Electric polarization as a function of temperature is measured up to T{sub C} in three chromite ferrimagnetic spinels. Largest values are reached for spinels with Jahn-Teller cations at the A site (Ni or Fe). Highlights: Black-Right-Pointing-Pointer Electric polarization is evidenced in the ferrimagnetic state of the chromite spinels. Black-Right-Pointing-Pointer Jahn-Teller cations at the A site of these spinels lead to larger polarization values. Black-Right-Pointing-Pointer Vanadium substituted at the Cr (or Fe) site of delafossites changes the antiferromagnetic state to spin glass. Black-Right-Pointing-Pointer Electric polarization is not the result of magnetic ordering but magnetic disordering in Cr or Fe delafossites. Black-Right-Pointing-Pointer Relaxor-type ferroelectricity or spin induced ferroelectricity can be observed in the delafossites.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

In situ electric-field control of ferromagnetic resonance in the low-loss organic-based ferrimagnet V[TCNE] x ∼2

We demonstrate indirect electric-field control of ferromagnetic resonance (FMR) in devices that integrate the low-loss, molecule-based, room-temperature ferrimagnet vanadium tetracyanoethylene (V[TCNE]x∼2) mechanically coupled to PMN-PT piezoelectric transducers. Upon straining the V[TCNE]x films, the FMR frequency is tuned by more than 6 times the resonant linewidth with no change in Gilbert damping for samples with α = 6.5 × 10−5. We show this tuning effect is due to a strain-dependent magnetic anisotropy in the films and find the magnetoelastic coefficient |λs| ∼ (1–4.4) ppm, backed by theoretical predictions from density-functional theory calculations and magnetoelastic theory. Noting the rapidly expanding application space for strain-tuned FMR, we define a new metric for magnetostrictive materials, magnetostrictive agility, given by the ratio of the magnetoelastic coefficient to the FMR linewidth. This agility allows for a direct comparison between magnetostrictive materials in terms of their comparative efficacy for magnetoelectric applications requiring ultra-low loss magnetic resonance modulated by strain. With this metric, we show V[TCNE]x is competitive with other magnetostrictive materials, including YIG and Terfenol-D. This combination of ultra-narrow linewidth and magnetostriction, in a system that can be directly integrated into functional devices without requiring heterogeneous integration in a thin film geometry, promises unprecedented functionality for electric-field tuned microwave devices ranging from low-power, compact filters and circulators to emerging applications in quantum information science and technology.

Materials Science↗
DOE OSTI2017

Chemical Changes in Layered Ferroelectric Semiconductors Induced by Helium Ion Beam

Transitioning to multi-material systems as either interfaced 2D materials or 3D heterostructures can lead to the next generation multi-functional device architectures. Combined direct physical and chemical nanoscale control of these systems offers a new way to tailor material and device functionality as functional structures reach their physical limit. Transition metal thiophosphate (TPS), Cu 1-x In 1+x/3 P 2 S 6 , that have ferroelectric polarization behavior as layered crystals at room temperature and above make them attractive candidates for direct material sculpting of both chemical and functional properties. The bulk material exhibits stable ferroelectric polarization corroborated by domain structures, rewritable polarization, and hysteresis loops. Our previous studies have demonstrated that ferroic order persists on the surface and that spinoidal decomposition of ferroelectric and paraelectric phases occurs in non-stoichiometric Cu/In ratio formulations. Here, we elucidate the chemical changes induced through helium ion irradiation in the TPS family library with varying Cu/In ratio formulations using correlated AFM and ToF-SIMS imaging. We correlate nano- and micro- structures that scale, in area and volume, to the total dose of the helium ion beam, as well as the overall copper concentration in the sample. Furthermore, our ToF-SIMS results show that ion irradiation leads to oxygen penetration as a function of Cu concentration, and proceeds along the Cu domains to the stopping distance of the helium ions in the TPS material. These results opens up new opportunities to understand and implement ferroicly coupled van der Waal devices into an existing framework of 2D heterostructures by locally tuning material chemistry and functionality.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Three Dimensional Dynamics and Fluctuations of DNA-Nanogold Dimers by Individual-Particle Electron Tomography

Over time, organic-inorganic hybridized nanocrystals have been proven as an important additional tool for addressing many emerging challenges biological and material sciences. Nanogold and quantum dot conjugates have been used extensively as biomolecular markers, while DNA base pairing has directed the self-assembly of discrete groupings and arrays of organic and inorganic nanocrystals in formation of a network solid for electronic devices and memory components. The control of DNA-mediated assembly depends crucially upon the ability to exposure three-dimensional (3D) structure of DNA-nanocrystals hybridized building blocks. Current techniques limit in structure determination of flexible and heterogeneous sample. Here, we employed the electron tomography and negative-staining techniques to investigate the 3D structure of DNA-nanogold dimers that were self-assembled from a mixture of an 84-base-pair double-stranded DNA (dsDNA) conjugated with two 5-nm nanogold particles. We reconstructed a total of 14 electron density maps at a resolution of ~2 nm from each individual dsDNA-nanogold particle using the individual-particle electron tomography (IPET) reconstruction method. Using these 3D density maps as constrain, we projected a standard flexible DNA model onto the observed EM density maps and derived 14 conformations of dsDNA by molecular dynamics simulations. By aligning these structures from one distal end nanogold, the distribution showed the DNA fluctuation and flexibility between nanogolds, which providing a blueprint research for studying of DNA-mediated assembly of complex inorganic nanostructures.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2013

Concurrent determination of bisphenol A pharmacokinetics in maternal and fetal rhesus monkeys

Bisphenol A (BPA) is an important industrial chemical used as the monomer for polycarbonate plastic and in epoxy resins for food can liners. Worldwide biomonitoring studies consistently find a high prevalence of BPA conjugates in urine (> 90%) in amounts consistent with aggregate exposure at levels below 1 μg/kg bw/d. The current study used LC/MS/MS to measure concurrently the pharmacokinetics of aglycone (active) and conjugated (inactive) deuterated BPA (d6) in maternal and fetal rhesus monkey serum, amniotic fluid, and placenta following intravenous injection in the dam (100 μg/kg bw). Internal exposures of the fetus to aglycone d6-BPA (serum AUC) were attenuated by maternal, placental, and fetal Phase II metabolism to less than half that in the dam. Levels of aglycone and conjugated d6-BPA measured in whole placenta were consistent with a role in metabolic detoxification. The monotonic elimination of aglycone d6-BPA from the fetal compartment accompanied by persistent conjugate levels provides further evidence arguing against the hypothesis that BPA conjugates are selectively deconjugated by either the placenta or fetus. These results also provide benchmarks to guide the interpretation of human cord blood, amniotic fluid, and placenta sampling and measurement strategies as a basis for estimating fetal exposures to BPA. This study in a non-human primate model provides additional pharmacokinetic data for use in PBPK modeling of perinatal exposures to BPA from food contact, medical devices, and other environmental sources. - Highlights: ► Maternal, placental, and fetal Phase II metabolism attenuate fetal exposure to BPA. ► Serum AUC for aglycone BPA in fetal monkeys is less than half of that in the dam. ► BPA profiles in monkey fetus rule out selective deconjugation and accumulation. ► BPA levels in monkey placenta are similar to other metabolically active tissues. ► Some published human cord blood data for BPA are inconsistent with these measurements.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2017

Semiconducting Single-Walled Carbon Nanotubes in Solar Energy Harvesting

Semiconducting single-walled carbon nanotubes (s-SWCNTs) represent a tunable model one-dimensional system with exceptional optical and electronic properties. High-throughput separation and purification strategies have enabled the integration of s-SWCNTs into a number of optoelectronic applications, including photovoltaics (PVs). In this Perspective, we discuss the fundamental underpinnings of two model PV interfaces involving s-SWCNTs. We first discuss s-SWCNT-fullerene heterojunctions where exciton dissociation at the donor-acceptor interface drives solar energy conversion. Next, we discuss charge extraction at the interface between s-SWCNTs and a photoexcited perovskite active layer. In each case, the use of highly enriched semiconducting SWCNT samples enables fundamental insights into the thermodynamic and kinetic mechanisms that drive the efficient conversion of solar photons into long-lived separated charges. As a result, these model systems help to establish design rules for next-generation PV devices containing well-defined organic semiconductor layers and help to frame a number of important outstanding questions that can guide future studies.

14 SOLAR ENERGY↗
DOE OSTI2015

Photoconductive terahertz near-field detector with a hybrid nanoantenna array cavity

Nanoscale structuring of optical materials leads to modification of their properties and can be used for improving efficiencies of photonic devices and for enabling new functionalities. In ultrafast optoelectronic switches for generation and detection of terahertz (THz) radiation, incorporation of nanostructures allows us to overcome inherent limitations of photoconductive materials. We propose and demonstrate a nanostructured photoconductive THz detector for sampling highly localized THz fields, down to the level of λ/150. The nanostructure that consists of an array of optical nanoantennas and a distributed Bragg reflector forms a hybrid cavity, which traps optical gate pulses within the photoconductive layer. The effect of photon trapping is observed as enhanced absorption at a designed wavelength. This optically thin photoconductive THz detector allows us to detect highly confined evanescent THz fields coupled through a deeply subwavelength aperture as small as 2 μm (λ/150 at 1 THz). As a result, by monolithically integrating the THz detector with apertures ranging from 2 to 5 μm we realize higher spatial resolution and higher sensitivity in aperture-type THz near-field microscopy and THz time-domain spectroscopy.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2019

Measurement of carrier lifetime in micron-scaled materials using resonant microwave circuits

The measurement of minority carrier lifetimes is vital to determining the material quality and operational bandwidth of a broad range of optoelectronic devices. Typically, these measurements are made by recording the temporal decay of a carrier-concentration-dependent material property following pulsed optical excitation. Such approaches require some combination of efficient emission from the material under test, specialized collection optics, large sample areas, spatially uniform excitation, and/or the fabrication of ohmic contacts, depending on the technique used. In contrast, here we introduce a technique that provides electrical readout of minority carrier lifetimes using a passive microwave resonator circuit. We demonstrate >10 5 improvement in sensitivity, compared with traditional photoemission decay experiments and the ability to measure carrier dynamics in micron-scale volumes, much smaller than is possible with other techniques. The approach presented is applicable to a wide range of 2D, micro-, or nano-scaled materials, as well as weak emitters or non-radiative materials.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Visible light emission and energy transfer processes in Sm-doped nitride films

Even though the great interest in studying the near-infrared light emission due to Er{sup 3+} ions for telecommunication purposes, efficient visible radiation can be achieved from many different rare-earth (RE) ions. In fact, visible and/or near-infrared light emission takes place in RE-doped wide bandgap semiconductors following either photon or electron excitation, suggesting their technological potential in devices such as light-emitting diodes (LED's) and flat-panel displays, for example. Taking into consideration these aspects, the present contribution reports on the investigation of AlN, BeN, GeN, and SiN thin films doped with samarium. The samples were prepared by sputtering and as a result of the deposition method and conditions they present an amorphous structure and Sm concentrations in the low 0.5 at. %. After deposition, the samples were submitted to thermal annealing treatments and investigated by different spectroscopic techniques. A detailed examination of the experimental data allowed to identify optical transitions due to Sm{sup 3+} and Sm{sup 2+} ions as well as differences in their mechanisms of photon excitation and recombination. Moreover, it is shown that the Sm-related spectral features and emission intensity are susceptible, respectively, to the atomic environment the Sm{sup 3+}/Sm{sup 2+} ions experience and to the presence of non-radiative recombination centers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Computed tomography image using sub-terahertz waves generated from a high-T{sub c} superconducting intrinsic Josephson junction oscillator

A computed tomography (CT) imaging system using monochromatic sub-terahertz coherent electromagnetic waves generated from a device constructed from the intrinsic Josephson junctions in a single crystalline mesa structure of the high-T{sub c} superconductor Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+δ} was developed and tested on three samples: Standing metallic rods supported by styrofoam, a dried plant (heart pea) containing seeds, and a plastic doll inside an egg shell. The images obtained strongly suggest that this CT imaging system may be useful for a variety of practical applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Accelerated carrier recombination by grain boundary/edge defects in MBE grown transition metal dichalcogenides

Defect-carrier interaction in transition metal dichalcogenides (TMDs) plays important roles in carrier relaxation dynamics and carrier transport, which determines the performance of electronic devices. With femtosecond laser time-resolved spectroscopy, we investigated the effect of grain boundary/edge defects on the ultrafast dynamics of photoexcited carrier in molecular beam epitaxy (MBE)-grown MoTe 2 and MoSe 2 . We found that, comparing with exfoliated samples, the carrier recombination rate in MBE-grown samples accelerates by about 50 times. We attribute this striking difference to the existence of abundant grain boundary/edge defects in MBE-grown samples, which can serve as effective recombination centers for the photoexcited carriers. We also observed coherent acoustic phonons in both exfoliated and MBE-grown MoTe 2 , indicating strong electron-phonon coupling in this materials. Our measured sound velocity agrees well with the previously reported result of theoretical calculation. Our findings provide a useful reference for the fundamental parameters: carrier lifetime and sound velocity and reveal the undiscovered carrier recombination effect of grain boundary/edge defects, both of which will facilitate the defect engineering in TMD materials for high speed opto-electronics.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Computational discovery of two-dimensional rare-earth iodides: promising ferrovalley materials for valleytronics

Two-dimensional Ferrovalley materials with intrinsic valley polarization are rare but highly promising for valley-based nonvolatile random access memory and valley filter devices. These ferromagnetic materials exhibit valleys at or near the Fermi level with intrinsic magnetism. The strong coupling between magnetism and spin–orbit coupling induces intrinsic valley polarization. Using Kinetically Limited Minimization, an unconstrained crystal structure prediction algorithm, and prototype sampling based on first-principles calculations, we have discovered new Ferrovalley materials, rare-earth iodides RI 2 , where R is a rare-earth element belonging to Sc, Y, or La-Lu, and I is Iodine. The rare-earth iodides are layered and demonstrate either 2H, 1T, or 1T d phase as the ground state in bulk, analogous to transition metal dichalcogenides (TMDCs). The calculated exfoliation energy of monolayers (MLs) is comparable to that of graphene and TMDCs, suggesting possible experimental synthesis. The MLs in the 2H phase exhibit ferromagnetism due to unpaired electrons in d and f orbitals. Throughout the rare-earth series, d bands have valley polarization at K and $\overline{K}$ points in the Brillouin zone in the vicinity of the Fermi level. Large intrinsic valley polarization in the range of 15–143 meV without external stimuli is observed in these Ferrovalley materials, which can be enhanced further by applying an in-plane bi-axial strain. These valleys can selectively be probed and manipulated for information storage and processing, potentially offering superior performance beyond conventional electronics and spintronics. Here we further show that the 2H ferromagnetic phase of RI 2 MLs possesses non-zero Berry curvature and exhibits anomalous valley Hall effect with considerable anomalous Hall conductivity. Our work will incite exploratory synthesis of the predicted Ferrovalley materials and their application in valleytronics and beyond.

2D materials↗
DOE OSTI2023

Kondo interaction of quantum spin Hall edge channels with charge puddles

Under time-reversal symmetry, quantum spin Hall edge channels are protected against elastic backscattering. However, even for samples which exhibit conductance quantization due to the quantum spin Hall effect, reproducible fluctuations shape the quantization plateau when the chemical potential is tuned through the bulk gap. Here, we examine those fluctuations in micron-sized HgTe quantum well devices. By performing temperature- and gate-dependent measurements, we conclude that “charge puddles” in the narrow-gap material have a Kondo-type interaction with the edge channels resulting in the observed conductance fluctuations. Our results provide insight into the underlying mechanisms of scattering in quantum spin Hall edge channels.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Confinement-Induced Chiral Edge Channel Interaction in Quantum Anomalous Hall Insulators

In quantum anomalous Hall (QAH) insulators, the interior is insulating but electrons can travel with zero resistance along one-dimensional (1D) conducting paths known as chiral edge channels (CECs). These CECs have been predicted to be confined to the 1D edges and exponentially decay in the two-dimensional (2D) bulk. Here, in this Letter, we present the results of a systematic study of QAH devices fashioned in a Hall bar geometry of different widths under gate voltages. At the charge neutral point, the QAH effect persists in a Hall bar device with a width of only ~7⁢2 nm, implying the intrinsic decaying length of CECs is less than ~3⁢6 nm. In the electron-doped regime, we find that the Hall resistance deviates quickly from the quantized value when the sample width is less than 1 μ⁢m. Our theoretical calculations suggest that the wave function of CEC first decays exponentially and then shows a long tail due to disorder-induced bulk states. Therefore, the deviation from the quantized Hall resistance in narrow QAH samples originates from the interaction between two opposite CECs mediated by disorder-induced bulk states in QAH insulators, consistent with our experimental observations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗