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At least 1,351 records · Page 75

InGaN based micro light emitting diodes featuring a buried GaN tunnel junction

GaN tunnel junctions (TJs) are grown by ammonia molecular beam epitaxy. High doping levels are achieved with a net acceptor concentration close to ∼10{sup 20 }cm{sup −3}, thanks to the low growth temperature. This allows for the realization of p-n junctions with ultrathin depletion width enabling efficient interband tunneling. n-p-n structures featuring such a TJ exhibit low leakage current densities, e.g., <5 × 10{sup −5} A cm{sup −2} at reverse bias of 10 V. Under forward bias, the voltage is 3.3 V and 4.8 V for current densities of 20 A cm{sup −2} and 2000 A cm{sup −2}, respectively. The specific series resistance of the whole device is 3.7 × 10{sup −4} Ω cm{sup 2}. Then micro-light emitting diodes (μ-LEDs) featuring buried TJs are fabricated. Excellent current confinement is demonstrated together with homogeneous electrical injection, as seen on electroluminescence mapping. Finally, the I-V characteristics of μ-LEDs with various diameters point out the role of the access resistance at the current aperture edge.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Degradation of (InAlGa)N-based UV-B light emitting diodes stressed by current and temperature

The degradation of the electrical and optical properties of (InAlGa)N-based multiple quantum well light emitting diodes (LEDs) emitting near 308 nm under different stress conditions has been studied. LEDs with different emission areas were operated at room temperature and at constant current densities of 75 A/cm{sup 2}, 150 A/cm{sup 2}, and 225 A/cm{sup 2}. In addition, the heat sink temperature was varied between 15 °C and 80 °C. Two main modes for the reduction of the optical power were found, which dominate at different times of operation: (1) Within the first 100 h, a fast drop of the optical power is observed scaling exponentially with the temperature and having an activation energy of about 0.13 eV. The drop in optical power is accompanied by changes of the current-voltage (I-V) characteristic. (2) For operation times beyond 100 h, the optical power decreases slowly which can be reasonably described by a square root time dependence. Here, the degradation rate depends on the current density, rather than the current. Again, the rate of optical power reduction of the second mode depends exponentially on the temperature with an activation energy of about 0.21 eV. The drop in the optical power is accompanied by an increased reverse-bias leakage current.

36 MATERIALS SCIENCE↗

Possible atomic structures responsible for the sub-bandgap absorption of chalcogen-hyperdoped silicon

Single-crystal silicon was hyperdoped with sulfur, selenium, and tellurium using ion implantation and nanosecond laser melting. The hyperdoping of such chalcogen elements led to strong and wide sub-bandgap light absorption. Annealing the hyperdoped silicon, even at low temperatures (such as 200–400 °C), led to attenuation of the sub-bandgap absorption. To explain the attenuation process, we modeled it as chemical decomposition reaction from an optically absorbing structure to a non-absorbing structure. Attenuation of the experimental absorption coefficient was fit using the Arrhenius equation. From the fitted data, we extracted the reaction activation energies of S-, Se-, and T-hyperdoped silicon as 0.338 ± 0.029 eV, 0.471 ± 0.040 eV, and 0.357 ± 0.028 eV, respectively. We discuss these activation energies in terms of the bond energies of chalcogen–Si metastable bonds, and suggest that several high-energy interstitial sites, rather than substitutional sites, are candidates for the atomic structures that are responsible for the strong sub-bandgap absorption of chalcogen hyperdoped silicon.

36 MATERIALS SCIENCE↗

Analysis of lasers as a solution to efficiency droop in solid-state lighting

This letter analyzes the proposal to mitigate the efficiency droop in solid-state light emitters by replacing InGaN light-emitting diodes (LEDs) with lasers. The argument in favor of this approach is that carrier-population clamping after the onset of lasing limits carrier loss to that at threshold, while stimulated emission continues to grow with injection current. A fully quantized (carriers and light) theory that is applicable to LEDs and lasers (above and below threshold) is used to obtain a quantitative evaluation. The results confirm the potential advantage of higher laser output power and efficiency above lasing threshold, while also indicating disadvantages including low efficiency prior to lasing onset, sensitivity of lasing threshold to temperature, and the effects of catastrophic laser failure. As a result, a solution to some of these concerns is suggested that takes advantage of recent developments in nanolasers.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes

The optical polarization of emission from ultraviolet (UV) light emitting diodes (LEDs) based on (0001)-oriented Al{sub x}Ga{sub 1−x}N multiple quantum wells (MQWs) has been studied by simulations and electroluminescence measurements. With increasing aluminum mole fraction in the quantum well x, the in-plane intensity of transverse-electric (TE) polarized light decreases relative to that of the transverse-magnetic polarized light, attributed to a reordering of the valence bands in Al{sub x}Ga{sub 1−x}N. Using k ⋅ p theoretical model calculations, the AlGaN MQW active region design has been optimized, yielding increased TE polarization and thus higher extraction efficiency for bottom-emitting LEDs in the deep UV spectral range. Using (i) narrow quantum wells, (ii) barriers with high aluminum mole fractions, and (iii) compressive growth on patterned aluminum nitride sapphire templates, strongly TE-polarized emission was observed at wavelengths as short as 239 nm.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Interpretation of the photoelectron, ultraviolet, and vacuum ultraviolet photoabsorption spectra of bromobenzene by ab initio configuration interaction and DFT computations

New photoelectron, ultraviolet (UV), and vacuum UV (VUV) spectra have been obtained for bromobenzene by synchrotron study with higher sensitivity and resolution than previous work. This, together with use of ab initio calculations with both configuration interaction and time dependent density functional theoretical methods, has led to major advances in interpretation. The VUV spectrum has led to identification of a considerable number of Rydberg states for the first time. The Franck-Condon (FC) analyses including both hot and cold bands lead to identification of the vibrational structure of both ionic and electronically excited states including two Rydberg states. The UV onset has been interpreted in some detail, and an interpretation based on the superposition of FC and Herzberg-Teller contributions has been performed. In a similar way, the 6 eV absorption band which is poorly resolved is analysed in terms of the presence of two ππ* states of {sup 1}A{sub 1} (higher oscillator strength) and {sup 1}B{sub 2} (lower oscillator strength) symmetries, respectively. The detailed analysis of the vibrational structure of the 2{sup 2}B{sub 1} ionic state is particularly challenging, and the best interpretation is based on equation-of-motion-coupled cluster with singles and doubles computations. A number of equilibrium structures of the ionic and singlet excited states show that the molecular structure is less subject to variation than corresponding studies for iodobenzene. The equilibrium structures of the 3b{sub 1}3s and 6b{sub 2}3s (valence shell numbering) Rydberg states have been obtained and compared with the corresponding ionic limit structures.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Hole injection from the sidewall of V-shaped pits into c-plane multiple quantum wells in InGaN light emitting diodes

The role which the V-shaped pits (V-pits) play in InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs) has been proposed to enable the formation of sidewall MQWs, whose higher bandgap than that of the c-plane MQWs is considered to act as an energy barrier to prevent carriers from reaching the dislocations. Here, with increasing proportion of current flowing via the V-pits, the emission of the c-plane MQWs broadens across the short-wavelength band and shows a blueshift successively. This phenomenon is attributed to hole injection from the sidewall of V-pits into the c-plane MQWs, which is a new discovery in the injection mechanism of InGaN/GaN MQW LEDs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Direct-drive inertial confinement fusion: A review

In this study, the direct-drive, laser-based approach to inertial confinement fusion (ICF) is reviewed from its inception following the demonstration of the first laser to its implementation on the present generation of high-power lasers. The review focuses on the evolution of scientific understanding gained from target-physics experiments in many areas, identifying problems that were demonstrated and the solutions implemented. The review starts with the basic understanding of laser–plasma interactions that was obtained before the declassification of laser-induced compression in the early 1970s and continues with the compression experiments using infrared lasers in the late 1970s that produced thermonuclear neutrons. The problem of suprathermal electrons and the target preheat that they caused, associated with the infrared laser wavelength, led to lasers being built after 1980 to operate at shorter wavelengths, especially 0.35 um—the third harmonic of the Nd:glass laser—and 0.248 um (the KrF gas laser). The main physics areas relevant to direct drive are reviewed. The primary absorption mechanism at short wavelengths is classical inverse bremsstrahlung. Nonuniformities imprinted on the target by laser irradiation have been addressed by the development of a number of beam-smoothing techniques and imprint-mitigation strategies. The effects of hydrodynamic instabilities are mitigated by a combination of imprint reduction and target designs that minimize the instability growth rates. Several coronal plasma physics processes are reviewed. The two-plasmon–decay instability, stimulated Brillouin scattering (together with cross-beam energy transfer), and (possibly) stimulated Raman scattering are identified as potential concerns, placing constraints on the laser intensities used in target designs, while other processes (self-focusing and filamentation, the parametric decay instability, and magnetic fields), once considered important, are now of lesser concern for mainline direct-drive target concepts. Filamentation is largely suppressed by beam smoothing. Thermal transport modeling, important to the interpretation of experiments and to target design, has been found to be non-local in nature. Advances in shock timing and equation-of-state measurements relevant to direct-drive ICF are reported. Room-temperature implosions have provided an increased understanding of the importance of stability and uniformity. The evolution of cryogenic implosion capabilities, leading to an extensive series carried out on the 60-beam OMEGA laser [T. R. Boehly et al., Opt. Commun. 133, 495 (1997)], is reviewed together with major advances in cryogenic target formation. A polar-drive concept has been developed that will enable direct-drive–ignition experiments to be performed on the National Ignition Facility [C. A. Haynam et al., Appl. Opt. 46 (16), 3276 (2007)]. The advantages offered by the alternative approaches of fast ignition and shock ignition and the issues associated with these concepts are described. The lessons learned from target-physics and implosion experiments are taken into account in ignition and high-gain target designs for laser wavelengths of 1/3 μm and 1/4 μm. Substantial advances in direct-drive inertial fusion reactor concepts are reviewed. Overall, the progress in scientific understanding over the past five decades has been enormous, to the point that inertial fusion energy using direct drive shows significant promise as a future environmentally attractive energy source.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Transparent ITO/Ag-Pd-Cu/ITO multilayer cathode use in inverted organic solar cells

The characteristics of transparent ITO/Ag-Pd-Cu (APC)/ITO multilayer cathodes were investigated for use in inverted organic solar cells (IOSCs). The insertion of an APC interlayer into the ITO film effectively led to crystallization of the top ITO layer, unlike that in the Ag interlayer, and resulted in a low sheet resistance of 6.55 Ohm/square and a high optical transmittance of 84.14% without post annealing. In addition, the alloying of the Pd and Cu elements into Ag prevented agglomeration and oxidization of the metal interlayer and led to more stable ITO/APC/ITO films under ambient conditions. The microstructure and interfacial structure of the transparent ITO/APC/ITO cathode in the IOSCs were examined in detail by synchrotron X-ray scattering and high resolution transmission electron microscopy. Furthermore, we suggested a possible mechanism to explain the lower PCE of the IOSCs with an ITO/APC/ITO cathode than that of a reference IOSC with a crystalline ITO cathode using the external quantum efficiency of the IOSCs.

36 MATERIALS SCIENCE↗

A step-wise steerable source of illumination for low-noise “Violin-Mode” shadow sensors, intended for use in interferometric gravitational wave detectors

A steerable low-noise source of illumination is described for shadow-sensors having a displacement sensitivity of ∼100 pm (rms)/√Hz, at 500 Hz, over a measuring span of at least ±0.5 mm. These sensors were designed to detect lateral “Violin-Mode” resonances in the highly tensioned fused-silica suspension fibres of the test-masses/mirrors for the Advanced Laser Interferometer Gravitational Wave Observatory gravitational wave detectors. The shadow sensors—one intended for each of the four fibres in a suspension—comprised a source of Near InfraRed (NIR) radiation (emitter) and a differential shadow-displacement sensor (detector), these bracketing the fibre under test. The suspension fibres themselves were approximately 600 mm long by 0.4 mm in diameter, and when illuminated from the side, they cast narrow, vertical, shadows onto their respective detectors—these being located at an effective distance of 50 fibre diameters behind the axes of the fibres themselves. The emitter described here was designed to compensate for a significant degree of mechanical drift or creep over time in the mean position of its suspension fibre. This was achieved by employing five adjacent columns of 8 × miniature NIR LEDs (Light Emitting Diodes, λ = 890 nm), with one column being activated at a time. When used in conjunction with a “reverse Galilean” telescope, the LED sources allowed the collimated beam from the emitter to be steered azimuthally in fine angular increments (0.65°), causing the fibre’s shadow to move laterally, in a step-wise manner, across the plane of its facing detector. Each step in shadow position was approximately 0.23 mm in size, and this allowed the fibre’s shadow to be re-centred, so as to bridge once again both elements of its photodiode detector—even if the fibre was off-centred by as much as ±0.5 mm. Re-centring allowed Violin-Mode vibrations of the fibre to be sensed once again as differential AC photocurrents, these flowing in anti-phase in the two elements of the “split-photodiode” detector.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Spectral optimization simulation of white light based on the photopic eye-sensitivity curve

Spectral optimization simulation of white light is studied to boost maximum attainable luminous efficacy of radiation at high color-rendering index (CRI) and various color temperatures. The photopic eye-sensitivity curve V(λ) is utilized as the dominant portion of white light spectra. Emission spectra of a blue InGaN light-emitting diode (LED) and a red AlInGaP LED are added to the spectrum of V(λ) to match white color coordinates. It is demonstrated that at the condition of color temperature from 2500 K to 6500 K and CRI above 90, such white sources can achieve spectral efficacy of 330–390 lm/W, which is higher than the previously reported theoretical maximum values. We show that this eye-sensitivity-based approach also has advantages on component energy conversion efficiency compared with previously reported optimization solutions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Mechanism of hole injection enhancement in light-emitting diodes by inserting multiple hole-reservoir layers in electron blocking layer

In this study, gallium nitride (GaN) based light-emitting diodes (LEDs) with single and multiple hole-reservoir layers (HRLs) inserted in the electron-blocking layer (EBL) have been investigated numerically and experimentally. According to simulation results, a better electron confinement and a higher hole injection level can be achieved by the multiple HRLs inserted in the EBL region. To further reveal the underlying mechanism of hole injection enhancement experimentally, the active regions were intentionally designed to emit photons with three different wavelengths of 440 nm, 460 nm, and 480 nm, respectively. Based on the experimental results of photoluminescence (PL) and time-resolved PL (TRPL) measurements conducted at 298 K, the remarkable enhancement (148%) of PL intensities and significant increase in the decay times of the quantum wells close to p-GaN can be obtained. Therefore, the mechanism is proposed that carriers are able to reserve in the EBL region with multiple HRLs for a much longer time. Meanwhile, carriers could diffuse into the active region by tunnelling and/or thermo-electronic effect and then recombine efficiently, leading to the better carrier reservoir effect and higher hole injection in LEDs. As a result, by inserting multiple HRLs in the EBL region instead of single HRL, the experimental external quantum efficiency is enhanced by 19.8%, while the serious droop ratio is markedly suppressed from 37.0% to 27.6% at the high current injection of 100 A/cm{sup 2}.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Improved performance in vertical GaN Schottky diode assisted by AlGaN tunneling barrier

In a vertical GaN Schottky barrier diode, the free electron concentration n in the 6-μm-thick drift layer was found to greatly impact the diode reverse leakage current, which increased from 2.1 × 10{sup −7} A to 3.9 × 10{sup −4} A as n increased from 7.5 × 10{sup 14 }cm{sup −3} to 6.3 × 10{sup 15 }cm{sup −3} at a reverse bias of 100 V. By capping the drift layer with an ultrathin 5-nm graded AlGaN layer, reverse leakage was reduced by more than three orders of magnitude with the same n in the drift layer. We attribute this to the increased Schottky barrier height with the AlGaN at the surface. Meanwhile, the polarization field within the graded AlGaN effectively shortened the depletion depth, which led to the formation of tunneling current at a relatively small forward bias. The turn-on voltage in the vertical Schottky diodes was reduced from 0.77 V to 0.67 V—an advantage in reducing conduction loss in power switching applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Investigation of spin-gapless semiconductivity and half-metallicity in Ti{sub 2}MnAl-based compounds

The increasing interest in spin-based electronics has led to a vigorous search for new materials that can provide a high degree of spin polarization in electron transport. An ideal candidate would act as an insulator for one spin channel and a conductor or semiconductor for the opposite spin channel, corresponding to the respective cases of half-metallicity and spin-gapless semiconductivity. Our first-principle electronic-structure calculations indicate that the metallic Heusler compound Ti{sub 2}MnAl becomes half-metallic and spin-gapless semiconducting if half of the Al atoms are replaced by Sn and In, respectively. These electronic structures are associated with structural transitions from the regular cubic Heusler structure to the inverted cubic Heusler structure.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Near infrared emission of TbAG:Ce{sup 3+},Yb{sup 3+} phosphor for solar cell applications

Luminescent materials doped with rare earth ions are used for many devices such as optical amplifiers in telecommunication, phosphors for white light emitting diodes (LEDs), displays, and so on. Recently, they also have attracted a great interest for photovoltaic applications to improve solar cell efficiency by modifying solar spectrum. Crystal silicon (c-Si) solar cells most effectively convert photons of energy close to the semiconductor band gap. The mis-match between the incident solar spectrum and the spectral response of solar cells is one of the main reasons to limit the cell efficiency. The efficiency limit of the c-Si has been estimated to be 29% by Shockley and Queisser. However, this limit is estimated to be improved up to 38.4% by modifying the solar spectrum by a quantum cutting (down converting) phosphor which converts one photon of high energy into two photons of lower energy. The phenomenon such as the quantum cutting or the down conversion of rare earth ions have been investigated since Dexter reported the possibility of a luminescent quantum yield greater than unity in 1957. In the past, the quantum cutting from a vacuum ultraviolet photon to visible photons for Pr{sup 3+}, Gd{sup 3+},Gd{sup 3+}–Eu{sup 3+}, and Er{sup 3+}–Tb{sup 3+} had been studied. Recently, a new quantum cutting phenomenon from visible photon shorter than 500 nm to two infrared photons for Tb{sup 3+}–Yb{sup 3+}, Pr{sup 3+}–Yb{sup 3+}, and Tm{sup 3+}–Yb{sup 3+} has been reported. The Yb{sup 3+} ion is suitable as an acceptor and emitter because luminescent quantum efficiency of Yb{sup 3+} is close to 100% and the energy of the only excited level of Yb{sup 3+} (1.2 eV) is roughly in accordance with the band gap of Si (1.1 eV). In addition, the Ce{sup 3+}-doped Tb{sub 3}Al{sub 5}O{sub 12} (TbAG), used as a phosphor for white LED, has broad absorption bands in the range of 300–500 nm due to strong ligand field and high luminescent quantum efficiency. Therefore, the Ce{sup 3+} ions in the TbAG can be suitable as an excellent sensitizing donor for down conversion materials of Si solar cells. In this paper, Ce{sup 3+} –Yb{sup 3+}-codoped TbAG ceramics were prepared and the energy transfer (ET) including down conversion mechanism in Ce{sup 3+} – Yb{sup 3+} codoped TbAG ceramics have been evaluated by the photoluminescence (PL), the photoluminescence excitation (PLE), the lifetime and the quantum yield (QY), which was measured directly using an integrating sphere.

36 MATERIALS SCIENCE↗

Overshoot effects of electron on efficiency droop in InGaN/GaN MQW light-emitting diodes

To evaluate electron leakage in InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs), analytic models of ballistic and quasi-ballistic transport are developed. With this model, the impact of critical variables effecting electron leakage, including the electron blocking layer (EBL), structure of multiple quantum wells (MQWs), polarization field, and temperature are explored. The simulated results based on this model shed light on previously reported experimental observations and provide basic criteria for suppressing electron leakage, advancing the design of InGaN/GaN LEDs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

The near vacuum hohlraum campaign at the NIF: A new approach

The near vacuum campaign on the National Ignition Facility has concentrated its efforts over the last year on finding the optimum target geometry to drive a symmetric implosion at high convergence ratio (30x). As the hohlraum walls are not tamped with gas, the hohlraum is filling with gold plasma and the challenge resides in depositing enough energy in the hohlraum before it fills up. Hohlraum filling is believed to cause symmetry swings late in the pulse that are detrimental to the symmetry of the hot spot at high convergence. This paper describes a series of experiments carried out to examine the effect of increasing the distance between the hohlraum wall and the capsule (case to capsule ratio) on the symmetry of the hot spot. These experiments have shown that smaller Case to Capsule Ratio (CCR of 2.87 and 3.1) resulted in oblate implosions that could not be tuned round. Larger CCR (3.4) led to a prolate implosion at convergence 30x implying that inner beam propagation at large CCR is not impeded by the expanding hohlraum plasma. A Case to Capsule ratio of 3.4 is a promising geometry to design a round implosion but in a smaller hohlraum where the hohlraum losses are lower, enabling a wider cone fraction range to adjust symmetry.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

External modes in quantum dot light emitting diode with filtered optical feedback

This research reports a theoretical investigation on the role of filtered optical feedback (FOF) in the quantum dot light emitting diode (QD-LED). The underlying dynamics is affected by a sidle node, which returns to an elliptical shape when the wetting layer (WL) is neglected. Both filter width and time delay change the appearance of different dynamics (chaotic and mixed mode oscillations, MMOs). The results agree with the experimental observations. Here, the fixed point analysis for QDs was done for the first time. For QD-LED with FOF, the system transits from the coherence collapse case in conventional optical feedback to a coherent case with a filtered mode in FOF. It was found that the WL washes out the modes which is an unexpected result. This may attributed to the longer capture time of WL compared with that between QD states. Thus, WL reduces the chaotic behavior.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗