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At least 1,351 records · Page 75
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Thallium bromide (TIBr) semiconductors and devices with extended life apparatus, methods, and system

Various technologies pertaining to formation or treatment of a thallium bromide crystal to improve the operable lifespan of a device that incorporates the thallium bromide crystal are described herein. In exemplary embodiments, treatments including focused ion beam implantation, selective material removal, and buffer layer application are performed on a thallium bromide crystal to inhibit motion of dislocations toward a region at which an electrical contact is desirably installed. In other exemplary embodiments, a thallium bromide crystal is doped with impurities during formation that inhibit the motion of dislocations in the crystal. In still other exemplary embodiments, a thallium bromide crystal is formed by way of processes that inhibit dislocation formation during crystal growth or eliminate dislocations in an existing thallium bromide mass.

36 MATERIALS SCIENCE↗
NASA NTRS1981

Effects of Io ejecta on Europa

The effects of plasma ejected from Io on the nature and evolution of the surface of Europa and on the relative importance of the roles played by the two satellites in the Jupiter magnetosphere are examined. Observations of an ultraviolet absorption feature on the trailing side of Europa are interpreted as due to an equilibrium column density of SO2 in a steady-state model of the implantation of iogenic ions into the surface of Europa and their subsequent sputtering. The observed sulfur column density of 2 x 10 to the 16th/sq cm implies a slow loss of material from Europa, mainly water ice, and indicates that the spectrum of particles sputtered is soft. Considerations of the comparative roles of corotating and energetic heavy ions are shown to suggest that the implantation and sputtering is primarily the result of the proton and light ion component of the plasma. The weakness of Europa as a plasma source resulting from the soft sputtered particle spectrum thus leads to the dominance of Io in contributing to the magnetospheric plasma.

Eviatar, A.↗
DOE OSTI2016

Semi-insulating 4H-SiC layers formed by the implantation of high-energy (53 MeV) argon ions into n-type epitaxial films

It is shown that 9-μm-thick semi-insulating surface layers can be formed in moderately doped n-type silicon carbide (donor concentration 2 × 10{sup 16} cm{sup –3}) via the comparatively low-dose (7 × 10{sup 11} cm{sup –2}) implantation of high-energy (53 MeV) argon ions. The free-carrier removal rate is estimated at ~10{sup 4} cm{sup –1}. The resistivity of the semi-insulator is no less than 7 × 10{sup 12} Ω cm. Analysis of the monopolar current of electron injection into the semi-insulator shows that the impurity-conductivity compensation is due to radiation induced defects pinning the equilibrium Fermi level at a depth of 1.16 eV below the conduction-band bottom. The density of defect states at the Fermi level is 2.7 × 10{sup 16} cm{sup 2} eV{sup –1}.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Defects in Arsenic Implanted р{sup +}–n- and n{sup +}–p- Structures Based on MBE Grown CdHgTe Films

Complex studies of the defect structure of arsenic-implanted (with the energy of 190 keV) Cd{sub x}Hg{sub 1–x}Te (x = 0.22) films grown by molecular-beam epitaxy are carried out. The investigations were performed using secondary-ion mass spectroscopy, transmission electron microscopy, optical reflection in the visible region of the spectrum, and electrical measurements. Radiation donor defects were studied in n{sup +}–p- and n{sup +}–n-structures obtained by implantation and formed on the basis of p-type and n-type materials, respectively, without activation annealing. It is shown that in the layer of the distribution of implanted ions, a layer of large extended defects with low density is formed in the near-surface region followed by a layer of smaller extended defects with larger density. A different character of accumulation of electrically active donor defects in the films with and without a protective graded-gap surface layer has been revealed. It is demonstrated that p{sup +}–n- structures are formed on the basis of n-type material upon activation of arsenic in the process of postimplantation thermal annealing with 100% activation of impurity and complete annihilation of radiation donor defects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Surface-polarity-dependent ferromagnetism in arsenic-implanted ZnO films prepared by MBE

O-polar and Zn-polar ZnO films were prepared by rf-plasma assisted molecular beam epitaxy (MBE) on sapphire substrates. Arsenic ions have been implanted into high quality ZnO with a definite polarity. Substantial temperature-independent ferromagnetism has been observed for both films, with the O-polar film having approximately twice the magnetization as the Zn-polar film. The saturation magnetization is shown to be due to the defects introduced during implantation, rather than to local moments associated with the As ion. Rutherford Backscattering/Channeling and optical absorption measurements confirm that the implantation introduces more defect states in the O-polar films, while X-ray absorption near-edge structure measurements show that the environment of the arsenic ions was similar for both polarities. (C) 2014 Elsevier B.V. All rights reserved.

Doped ZnO↗
NASA NTRS1978

The use of an ion-beam source to alter the surface morphology of biological implant materials

An electron-bombardment ion-thruster was used as a neutralized-ion-beam sputtering source to texture the surfaces of biological implant materials. The materials investigated included 316 stainless steel; titanium-6% aluminum, 4% vanadium; cobalt-20% chromium, 15% tungsten; cobalt-35% nickel, 20% chromium, 10% molybdenum; polytetrafluoroethylene; polyoxymethylene; silicone and polyurethane copolymer; 32%-carbon-impregnated polyolefin; segmented polyurethane; silicone rubber; and alumina. Scanning electron microscopy was used to determine surface morphology changes of all materials after ion-texturing. Electron spectroscopy for chemical analysis was used to determine the effects of ion-texturing on the surface chemical composition of some polymers. Liquid contact angle data were obtained for ion-textured and untextured polymer samples. Results of tensile and fatigue tests of ion-textured metal alloys are presented. Preliminary data of tissue response to ion-textured surfaces of some metals, polytetrafluoroethylene, alumina, and segmented polyurethane have been obtained.

Weigand, A. J.↗
DOE OSTI2010

Role of interfaces i nthe design of ultra-high strength, radiation damage tolerant nanocomposites

The combination of high strength and high radiation damage tolerance in nanolaminate composites can be achieved when the individual layers in these composites are only a few nanometers thick and contain special interfaces that act both as obstacles to slip, as well as sinks for radiation-induced defects. The morphological and phase stabilities and strength and ductility of these nano-composites under ion irradiation are explored as a function of layer thickness, temperature and interface structure. Magnetron sputtered metallic multilayers such as Cu-Nb and V-Ag with a range of individual layer thickness from approximately 2 nm to 50 nm and the corresponding 1000 nm thick single layer films were implanted with helium ions at room temperature. Cross-sectional Transmission Electron Microscopy (TEM) was used to measure the distribution of helium bubbles and correlated with the helium concentration profile measured vis ion beam analysis techniques to obtain the helium concentration at which bubbles are detected in TEM. It was found that in multilayers the minimum helium concentration to form bubbles (approximately I nm in size) that are easily resolved in through-focus TEM imaging was several atomic %, orders of magnitude higher than that in single layer metal films. This observation is consistent with an increased solubility of helium at interfaces that is predicted by atomistic modeling of the atomic structures of fcc-bcc interfaces. At helium concentrations as high as 7 at.%, a uniform distribution of I nm diameter bubbles results in negligible irradiation hardening and loss of deformability in multi layers with layer thicknesses of a few nanometers. The control of atomic structures of interfaces to produce high helium solubility at interfaces is crucial in the design of nano-composite materials that are radiation damage tolerant. Reduced radiation damage also leads to a reduction in the irradiation hardening, particularly at layer thickness of approximately 5 run and below. The strategies for design of radiation-tolerant structural materials based on the knowledge gained from this work will be discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Silicon Quantum Dots with Counted Antimony Donor Implants

Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. A focused ion beam is used to implant close to quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of ions implanted can be counted to a precision of a single ion. Regular coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization, are observed in devices with counted implants.

Singh, Meenakshi↗
DOE OSTI2016

Spectroscopic analysis of the NIR emission in Tm implanted Al{sub x}Ga{sub 1-x}N layers

Al{sub x}Ga{sub 1-x}N samples, with different AlN molar fractions, x = 0, 0.15, 0.77, and 1, grown by halide vapor phase epitaxy were implanted with Tm ions. Photoluminescence (PL) measurements revealed that after thermal annealing all the samples exhibit intraionic Tm{sup 3+} luminescence. In samples with x > 0, the low temperature emission is dominated by the lines that appear in the near infrared (NIR) spectral region, corresponding to the overlapped {sup 1}G{sub 4} → {sup 3}H{sub 5} and {sup 3}H{sub 4} → {sup 3}H{sub 6} multiplet transitions. A detailed spectroscopic analysis of NIR emission of the thulium implanted and annealed Al{sub x}Ga{sub 1-x}N layers is presented by using temperature dependent steady-state PL, room temperature PL excitation, and time resolved PL. The results indicate that the excitonic features sensitive to the alloy disorder are involved in the excitation population processes of the Tm{sup 3+} luminescence and the highest thermal stability for the NIR emission occurs for the AlN:Tm sample.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

X-Ray Diagnostics of Microstructure Defects of Silicon Crystals Irradiated by Hydrogen Ions

Features of formation and transformation of radiation defects in near-surface layers of silicon plates that are implanted with hydrogen ions are studied. Using the method of high-resolution double-crystal X-ray diffractometry, values of the main parameters, such as mean effective thickness L{sub eff} and mean relative deformation Δa/a of a doped layer, are determined depending on the implantation dose and substrate temperature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Radiation induced hardening of beryllium during low temperature He implantation

The effect of ion irradiation on evolution of microstructure and hardening of beryllium with different impurity levels was investigated using TEM and nanoindentation. High purity S-65 grade and less-pure S-200-F grade were implanted by helium ions at temperatures of 50°C and 200°C. 11 different energies were used, so as to create a quasi-homogeneous 3 µm irradiated layer with average radiation damage of 0.1 dpa and average He content of 2000 appm.Nanoindentation experiments demonstrated that before irradiation, the S-200-F and S-65 grades have an average hardness of 3.7$\pm$0.8 GPa and 3.4$\pm$0.8 GPa correspondently. After implantation the hardness of both grades increased by about 60% for the 200°C irradiation and 100% for the 50°C irradiation. The crystallographic analysis of indented grains demonstrated that in the as-received materials the hardness is about 2.5 times higher when the indentation direction is close to the [0001] c-axis of beryllium compared to indentation perpendicular to [0001]. Hardness anisotropy significantly decreased after irradiation: the “soft orientation” was most sensitive to irradiation-induced hardening, with hardness increasing by about 140% after irradiation at 50°C and 100% after irradiation at 200°C, compared to about 15 - 20% for the “hard” orientation at both irradiation temperatures. The higher purity grade had smaller increase of the “soft orientation” hardness: 2.5$\pm$0.3 GPa for the S-65 and 2.9$\pm$0.2 GPa for the S-200-F.At both temperatures in both grades, under TEM investigation the radiation damage appears as “black dots” which are likely to be small dislocation loops with the number density of ~ 10 22 m -3 . No bubbles were observed by TEM inside grains and at grain boundaries. Analysis of the possible hardening contribution demonstrated that the observed “black dots” could be responsible for up to half of the measured hardening, while the rest of the hardening should originate from helium bubbles with the size below the TEM resolution (at or below 1.5 nm).

36 MATERIALS SCIENCE↗
DOE OSTI2011

In situ optimization of co-implantation and substrate temperature conditions for Nv-center formation in single crystal diamonds

We present first results from in situ characterization of NV-formation in single crystal diamonds following implantation of low energy nitrogen ions (7.7 keV), co-implantation of hydrogen, helium and carbon ions and in situ annealing. Diamond samples were implanted at room temperature or at a temperature of 780{degree} C during the implantation steps. We find that dynamic annealing during co-implantation enhances NV-center formation by up to 25%.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Machine Learning for Predictive Performance Analysis in Charged Particle Beam Tools

Imaging methods driven by probes, electrons, and ions have played a dominant role in modern science and engineering. Opportunities for machine vision and AI that focus on consumer problems like driving and feature recognition, are now presenting themselves for automating aspects of the scientific processes. This proposal aims to enable and drive discovery in ultra-low energy implantation by taking advantage of faster processing, flexible control and detection methods, and architecture-agnostic workflows that will result in higher efficiency and shorter scientific development cycles. Custom microscope control, collection and analysis hardware will provide a framework for conducting novel in situ experiments revealing unprecedented insight into surface dynamics at the nanoscale. Ion implantation is a key capability for the semiconductor industry. As devices shrink, novel materials enter the manufacturing line, and quantum technologies transition to being more mainstream. Traditional implantation methods fall short in terms of energy, ion species, and positional precision. Here we demonstrate 1 keV focused ion beam Au implantation into Si and validate the results via atom probe tomography. We show the Au implant depth at 1 keV is 0.8 nm and that identical results for low energy ion implants can be achieved by either lowering the column voltage, or decelerating ions using bias – while maintaining a sub-micron beam focus. We compare our experimental results to static calculations using SRIM and dynamic calculations using binary collision approximation codes TRIDYN and IMSIL. A large discrepancy between the static and dynamic simulation is found that is due to lattice enrichment with high stopping power Au and surface sputtering. Additionally, we demonstrate how model details are particularly important to the simulation of these low-energy heavy-ion implantations. Finally, we discuss how our results pave a way to much lower implantation energies, while maintaining high spatial resolution.

47 OTHER INSTRUMENTATION↗
DOE OSTI2015

Cracks and blisters formed close to a silicon wafer surface by He-H co-implantation at low energy

We have studied the effect of reducing the implantation energy towards low keV values on the areal density of He and H atoms stored within populations of blister cavities formed by co-implantation of the same fluence of He then H ions into Si(001) wafers and annealing. Using a variety of experimental techniques, we have measured blister heights and depth from the surface, diameter, areal density of the cracks from which they originate as functions of implantation energy and fluence. We show that there is a direct correlation between the diameters of the cracks and the heights of the associated blisters. This correlation only depends on the implantation energy, i.e., only on the depth at which the cracks are located. Using finite element method modeling, we infer the pressure inside the blister cavities from the elastic deformations they generate, i.e., from the height of the blisters. From this, we demonstrate that the gas pressure within a blister only depends on the diameter of the associated crack and not on its depth position and derive an analytical expression relating these parameters. Relating the pressure inside a blister to the respective concentrations of gas molecules it contains, we deduce the areal densities of He and H atoms contained within the populations of blisters. After low-energy implantations (8 keV He{sup +}, 3 keV H{sup +}), all the implanted He and H atoms contribute to the formation of the blisters. There is no measurable exo-diffusion of any of the implanted gases, in contrast to what was assumed at the state of the art to explain the failure of the Smart-Cut technology when using very low energy ion implantation for the fabrication of ultra-thin layers. Alternative explanations must be investigated.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

The Influence of the Surface Neutralization of Active Impurities on the Field-Electron Emission Properties of p-Type Silicon Crystals

Correlation dependences between variations of the structural-phase composition, morphology characteristics, and field-electron-emission (FEE) properties of surface-structured p-type silicon singlecrystalline (100)-oriented wafers have been studied during their stepwise high-dose carbon-ion-beam irradiation. It is established that the stepwise implantation of carbon decreases the FEE threshold and favors an increase in the maximum FEE-current density by more than two orders of magnitude. Physicochemical mechanisms involved in this modification of the properties of near-surface layers of silicon under carbon-ion implantation are considered.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Correlated characterization of 20 Ne-implanted targets using nuclear reaction analysis, Rutherford backscattering spectrometry, and ion transport modeling

In this article, we present the preparation and characterization of a large sample of implanted noble gas targets for use in precision nuclear astrophysics measurements with intense proton beams. Tantalum and titanium backings were prepared using wet-acid etching, outgassed via resistive heating, and implanted with 20 Ne + beams from differing ion sources. These experimental targets were investigated using both nuclear reaction analysis techniques on the 1169-keV resonance in 20 Ne(p, $\gamma$) 21 Na and Rutherford backscattering spectrometry analysis with 2-MeV α-particle beams. Results from these analyses reveal small target-to-target variations in stoichiometry, while exhibiting excellent agreement independent of ion-beam analysis method. We also present a self-consistent validation of the nuclear reaction analysis results using ion transport simulations in TRIM-2013 that rely on input parameters from SIMNRA scattering-yield fits to Rutherford backscattering spectra. In addition to a complete description of the implantation profile, this analysis method provides an alternate solution for characterizing a large sample of implanted targets when no suitable resonances are available for nuclear reaction analysis.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1986

Lithium counterdoped silicon solar cell

The resistance to radiation damage of an n(+)p boron doped silicon solar cell is improved by lithium counterdoping. Even though lithium is an n-dopant in silicon, the lithium is introduced in small enough quantities so that the cell base remains p-type. The lithium is introduced into the solar cell wafer by implantation of lithium ions whose energy is about 50 keV. After this lithium implantation, the wafer is annealed in a nitrogen atmosphere at 375 C for two hours.

Weinberg, I.↗