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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,351 records · Page 75
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Analysis of Irradiance Models for Bifacial PV Modules

We describe and compare two methods for modeling irradiance on the back surface of rack-mounted bifacial PV modules: view factor models and ray-tracing simulations. For each method we formulate one or more models and compare each model with irradiance measurements and short circuit current for a bifacial module mounted a fixed tilt rack with three other similarly sized modules. Our analysis illustrates the computational requirements of the different methods and provides insight into their practical applications. We find a level of consistency among the models which indicates that consistent models may be obtained by parameter calibrations.

14 SOLAR ENERGY↗
DOE OSTI2022

Quantum optimization of maximum independent set using Rydberg atom arrays

Realizing quantum speedup for practically relevant, computationally hard problems is a central challenge in quantum information science. Using Rydberg atom arrays with up to 289 qubits in two spatial dimensions, we experimentally investigate quantum algorithms for solving the maximum independent set problem. We use a hardware-efficient encoding associated with Rydberg blockade, realize closed-loop optimization to test several variational algorithms, and subsequently apply them to systematically explore a class of graphs with programmable connectivity. We find that the problem hardness is controlled by the solution degeneracy and number of local minima, and we experimentally benchmark the quantum algorithm’s performance against classical simulated annealing. On the hardest graphs, we observe a superlinear quantum speedup in finding exact solutions in the deep circuit regime and analyze its origins.

Science & Technology - Other Topics↗
DOE OSTI2022

VQE method: a short survey and recent developments

Abstract The variational quantum eigensolver (VQE) is a method that uses a hybrid quantum-classical computational approach to find eigenvalues of a Hamiltonian. VQE has been proposed as an alternative to fully quantum algorithms such as quantum phase estimation (QPE) because fully quantum algorithms require quantum hardware that will not be accessible in the near future. VQE has been successfully applied to solve the electronic Schrödinger equation for a variety of small molecules. However, the scalability of this method is limited by two factors: the complexity of the quantum circuits and the complexity of the classical optimization problem. Both of these factors are affected by the choice of the variational ansatz used to represent the trial wave function. Hence, the construction of an efficient ansatz is an active area of research. Put another way, modern quantum computers are not capable of executing deep quantum circuits produced by using currently available ansatzes for problems that map onto more than several qubits. In this review, we present recent developments in the field of designing efficient ansatzes that fall into two categories—chemistry–inspired and hardware–efficient—that produce quantum circuits that are easier to run on modern hardware. We discuss the shortfalls of ansatzes originally formulated for VQE simulations, how they are addressed in more sophisticated methods, and the potential ways for further improvements.

Fedorov, Dmitry A. (ORCID:0000000316598580)↗
DOE OSTI2020

Combined Environments: Driving multiple loads on Z

Pulsed power drivers such as the Z generator of Sandia National Laboratories typically deliver high current (>20MA) to single experiments. This project is intended to develop and assess ways to simultaneously drive multiple targets on a single pulsed power driver (specifically a neutron and an x-ray producing target driven in a single experiment). The combined x-ray/neutron environment produced will then be used to investigate potential synergistic effects in integrated circuits. A pre-requisite for being able to design and study multiple targets on Z is first adapting simulation tools to be able to model them effectively. This will enable us to assess the tradeoffs between the different ways multiple targets can be combined, and to better understand how existing and future pulsed power machines can be used to generate combined testing environments. This report is limited to documenting the initial development of a parallel load modeling capability that is presently being applied to design experiments to produce combined neutron/x-ray environments on Z.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Short-Depth QAOA circuits and Quantum Annealing on Higher-Order Ising Models (Rev.2)

The Quantum Alternating Operator Ansatz (QAOA) and Quantum Annealing (QA) are quantum algorithms that are both based on the adiabatic theorem and both have the goal of sampling the optimal solution(s) of combinatorial optimization problems. Quantum annealing has been physically instantiated on D-Wave devices using superconducting flux qubits, and QAOA can be programmed on digital gate-model quantum computers such as the programmable superconducting transmon qubits devices of the IBMQ series, for instance ibm washington. QAOA and QA address the same types of problems, but it is unclear how they will scale to large problem sizes and to larger and higher-fidelity quantum computers. In this article, we present a direct comparison between QAOA, one and two rounds, run on all 127 qubits of ibm washington and QA run on D-Wave Advantage system4.1 and Advantage system6.1. The problems which allow for this comparison are random Ising model problems whose connectivity matches the heavy hexagonal lattice topology of ibm washington and the Pegasus graph connectivity of the two D-Wave devices. We create two classes of problem instances for this comparison: one with higher order terms (ZZZ variable interactions), linear terms, and quadratic terms, and a separate problem type with only linear and quadratic terms. Our QAOA circuits are novel and extremely short depth, with a CNOT depth of 6 per round, which allows whole chip usage of ibm washington’s heavy hexagonal lattice and can be applied to future heavy-hex chips. We also test the effectiveness of the error suppression technique digital dynamical decoupling on the QAOA circuits. The QAOA circuits compiled to ibm washington are composed of several thousand circuit instructions, approximately 3, 000 depending on the details of the circuit, making these some the largest quantum circuits ever executed on a digital quantum processor. QAOA and QA are compared against the classical heuristic algorithm of simulated annealing and all problem instances are exactly solved using CPLEX in order to evaluate which samplers, if any, correctly found the ground state solution(s) of the problem instances. We find that (i) QA outperforms QAOA on all problem instances, (ii) QAOA samples the problems better than random sampling, and (iii) QAOA angle computation exhibits clear parameter concentration across the ensemble of Ising models.

127 Qubits↗
DOE OSTI2025

Practical Probabilistic Programming

Recent advances in probabilistic programming languages (PPLs) have provided the capability for exact inference: computing a closed-form probability distribution for a given probabilistic program. In particular, the new language Roulette uses a language oriented programming (LOP) approach, wherein analysts build new programming languages on top of a set of primitives provided by Roulette, which then translates these structures into a weighted model counting problem which can be solved by automated reasoning tools. However, because Roulette provides few convenience features, developing these new languages is challenging even for expert users. We developed a standard library of common probability functions for Roulette with the goal of improved usability. This included approximation of continuous probability density functions using discrete probability mass functions. We demonstrated this approach by modeling a cosmic ray striking a RAM controller. We found that Roulette provides a powerful interface for highly expressive probabilistic programs to be generated. In collaboration with the NNSA Advanced Simulation and Computing program, which resulted in development of a tool called Circulette, we were able to model complex circuits expressed in Verilog using probabilistic programs with an expressivity not previously possible. Our research question that motivated the development of a Roulette standard library was to determine whether non-experts could use a PPL to model relevant problems regarding radiation effects on microelectronics. This standard library improved the expressivity of Roulette by implementing common probability density functions, mathematical operators on distributions, and support for empirical distributions. While Roulette is a powerful modeling language, the untyped, LOP approach makes error messages difficult to understand and requires expert aid. We recommend further research on Roulette, especially with its error messages, to enable improved usability. At the same time, this project demonstrated that for users familiar with Roulette and the LOP approach, Roulette provides powerful new capabilities that can be integrated with other Sandia modeling capabilities.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2020

In-Situ Measurement of Power Loss for Crystalline Silicon Modules Undergoing Thermal Cycling and Mechanical Loading Stress Testing

An in-situ method is proposed for monitoring and estimating the power degradation of mc-Si photovoltaic (PV) modules undergoing thermo-mechanical degradation tests that primarily manifest through cell cracking, such as mechanical load tests, thermal cycling and humidity freeze tests. The method is based on in-situ measurement of the module’s dark current-voltage (I-V) characteristic curve during the stress test, as well as initial and final module flash testing on a Sun simulator. The method uses superposition of the dark I-V curve with final flash test module short-circuit current to account for shunt and junction recombination losses, as well as series resistance estimation from the in-situ measured dark I-Vs and final flash test measurements. The method is developed based on mc-Si standard modules undergoing several stages of thermo-mechanical stress testing and degradation, for which we investigate the impact of the degradation on the modules light I-V curve parameters, and equivalent solar cell model parameters. Experimental validation of the method on the modules tested shows good agreement between the in-situ estimated power degradation and the flash test measured power loss of the modules, of up to 4.31 % error (RMSE), as the modules experience primarily junction defect recombination and increased series resistance losses. However, the application of the method will be limited for modules experiencing extensive photo-current degradation or delamination, which are not well reflected in the dark I-V characteristic of the PV module.

14 SOLAR ENERGY↗
NASA NTRS1990

Experiments On Active Members In Large Space Structures

Report discusses continuing research on structures including active members, which incorporate sensors, actuators, and electronic circuits to monitor and control vibrations. Describes experiments on two structures with active members, progress in design, testing, and simulation of behavior of active members. Objective is to develop systems to enhance performances of large, flexible structures in space. Also applicable to some terrestrial structures and testing equipment involving close tolerances in feedback control of forces and/or positions.

Fanson, James L.↗
NASA NTRS2005

NASA Tech Briefs, August 2005

Topics include: Hidden Identification on Parts: Magnetic Machine-Readable Matrix Symbols; System for Processing Coded OFDM Under Doppler and Fading; Multipurpose Hyperspectral Imaging System; Magnetic-Flux-Compensated Voltage Divider; High-Performance Satellite/Terrestrial-Network Gateway; Internet-Based System for Voice Communication With the ISS; Stripline/Microstrip Transition in Multilayer Circuit Board; Dual-Band Feed for a Microwave Reflector Antenna; Quadratic Programming for Allocating Control Effort; Range Process Simulation Tool; Simulator of Space Communication Networks; Computing Q-D Relationships for Storage of Rocket Fuels; Contour Error Map Algorithm; Portfolio Analysis Tool; Glass Frit Filters for Collecting Metal Oxide Nanoparticles; Anhydrous Proton-Conducting Membranes for Fuel Cells; Portable Electron-Beam Free-Form Fabrication System; Miniature Laboratory for Detecting Sparse Biomolecules; Multicompartment Liquid-Cooling/Warming Protective Garments; Laser Metrology for an Optical-Path-Length Modulator; PCM Passive Cooling System Containing Active Subsystems; Automated Electrostatics Environmental Chamber; Estimating Aeroheating of a 3D Body Using a 2D Flow Solver; Artificial Immune System for Recognizing Patterns; Computing the Thermodynamic State of a Cryogenic Fluid; Safety and Mission Assurance Performance Metric; Magnetic Control of Concentration Gradient in Microgravity; Avionics for a Small Robotic Inspection Spacecraft; and Simulation of Dynamics of a Flexible Miniature Airplane.

Source record↗
DOE OSTI2025

A Twin Circuit Theory-Based Framework for Oscillation Event Analysis in Inverter-Dominated Power Systems With Case Study for Kaua‘i System

Here, this paper proposes a real-world oscillation event analysis framework for power systems that include inverter-based resources together with synchronous generators. Specifically, the proposed framework combines both measurement-and model-based techniques to readily identify potential oscillation sources, replay the oscillation event with numerical simulation, unveil the underlying oscillation mechanism, and suggest mitigation methods for a wide range of oscillation events. To strengthen the theoretical foundation of our analysis framework, this paper proposes a twin circuit theory that provides theoretical support for one key utilized but not well-proven measurement-based oscillation source identification method-Dissipating Energy Flow. Our twin circuit theory also shows that adopting well-tuned grid-forming inverters can be a potential mitigation method for oscillation events. Finally, the effectiveness of our proposed oscillation event analysis framework is demonstrated by addressing a real-world 18-20 Hz oscillation event in Kaua‘i's power system on November 21, 2021.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2024

Graph Neural Networks for Parameterized Quantum Circuits Expressibility Estimation (Rev.1)

Parameterized quantum circuits (PQCs) are fundamental to quantum machine learning (QML), quantum optimization, and variational quantum algorithms (VQAs). The expressibility of PQCs is a measure that determines their capability to harness the full potential of the quantum state space. It is thus a crucial guidepost to know when selecting a particular PQC ansatz. However, the existing technique for expressibility computation through statistical estimation requires a large number of samples, which poses significant challenges due to time and computational resource constraints. This paper introduces a novel approach for expressibility estimation of PQCs using Graph Neural Networks (GNNs). We demonstrate the predictive power of our GNN model with a dataset consisting of 25,000 samples from the noiseless IBM QASM Simulator and 12,000 samples from three distinct noisy quantum backends. The model accurately estimates expressibility, with root mean square errors (RMSE) of 0.05 and 0.06 for the noiseless and noisy backends, respectively. We compare our model’s predictions with reference circuits from Sim et al. and IBM Qiskit’s hardwareefficient ansatz sets to further evaluate our model’s performance. Our experimental evaluation in noiseless and noisy scenarios reveals a close alignment with ground truth expressibility values, highlighting the model’s efficacy. Moreover, our model exhibits promising extrapolation capabilities, predicting expressibility values with low RMSE for out-of-range qubit circuits trained solely on only up to 5-qubit circuit sets. This work thus provides a reliable means of efficiently evaluating the expressibility of diverse PQCs on noiseless simulators and hardware.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2026

Using Quantum Sensors to Probe the Quasiparticle Excess in Quantum Circuits due to Ionizing Radiation

This project quantified natural ionizing radiation as a source of excess quasiparticles in superconducting quantum circuits. Thermal Kinetic Inductance Detectors (TKIDs) were developed and deployed to measure event‑by‑event energy deposition in silicon substrates at millikelvin temperatures. Measurements and radiation transport simulations showed strong agreement across keV–MeV energies, providing validated background models and design guidance to mitigate radiation‑induced decoherence in superconducting qubits and detectors.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2026

Pathfinding quantum simulations of neutrinoless double- β decay

We present results from co-designed quantum simulations of the neutrinoless double- β decay of a simple nucleus in 1+1D quantum chromodynamics using IonQ’s Forte-generation trapped-ion quantum computers. Electrons, neutrinos, and up and down quarks are distributed across two lattice sites and mapped to 32 qubits, with an additional 4 qubits used for flag-based error mitigation. A four-fermion interaction is used to implement weak interactions, and lepton-number violation is induced by a neutrino Majorana mass. Quantum circuits that prepare the initial nucleus and time evolve with the Hamiltonian containing the strong and weak interactions are executed on IonQ Forte Enterprise. Enabled by tuned model parameters, lepton-number violation is observed in real time, providing a clear signal of neutrinoless double- β decay. This was made possible by co-designing the simulation to maximally utilize the all-to-all connectivity and native gate-set available on IonQ’s quantum computers. Quantum circuit compilation techniques and co-designed error-mitigation methods, informed from executing benchmarking circuits with up to 2,356 two-qubit gates, enabled observables to be extracted with high precision. We discuss the potential of future quantum simulations to provide yocto-second resolution of the reaction pathways in these, and other, nuclear processes.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
NASA NTRS1983

Annual Conference on Nuclear and Space Radiation Effects, Gatlinburg, TN, July 18-21, 1983, Proceedings

Topics discussed include radiation effects in devices; the basic mechanisms of radiation effects in structures and materials; radiation effects in integrated circuits; spacecraft charging and space radiation effects; hardness assurance for devices and systems; and radiation transport, energy deposition and charge collection. Papers are presented on the mechanisms of small instabilities in irradiated MOS transistors, on the radiation effects on oxynitride gate dielectrics, on the discharge characteristics of a simulated solar cell array, and on latchup in CMOS devices from heavy ions. Attention is also given to proton upsets in orbit, to the modeling of single-event upset in bipolar integrated circuits, to high-resolution studies of the electrical breakdown of soil, and to a finite-difference solution of Maxwell's equations in generalized nonorthogonal coordinates.

Source record↗
DOE OSTI2018

Design and Optimization of Amorphous Based on Highly Efficient HIT Solar Cell

The objective of this paper is to improve the power conversion efficiency of HIT solar cell using amorphous materials. A high efficiency amorphous material based on two dimensional heterojunction solar cell with thin intrinsic layer is designed and simulated at the research level using Synopsys/RSOFT-Solar Cell utility. The HIT structure composed of TCO/a-Si:H(p)/a-Si:H(i)/c-Si(n)/a-Si:H(i)/a-Si:H(n{sup +})/Ag is created by using of RSOFT CAD. Optical characterization of the cell is performed by Diffract MOD model based on RCWA (rigorous coupled wave analysis) algorithm. Electrical characterization of the cell is done by Solar cell utility using based on Ideal diode method. In addition, optimization of the different layer thickness in the HIT structure is executed to improve the absorption and thereby the photocurrent density. The proposed HIT solar cell structure resulted in an open circuit voltage of 0.751 V, a short circuit current density of 36.37 mA/cm{sup 2} and fill factor of 85.37% contributing to the total power conversion efficiency of 25.91% under AM1.5G. Simulation results showed that the power conversion efficiency is improved by 1.21% as compared to the reference HIT solar cell. This improvement in high efficiency is due to reduction of resistive losses, recombination losses at the hetero junction interface between intrinsic a-Si and c-Si, and optimization of the thicknesses in a-Si and c-Si layers.

14 SOLAR ENERGY↗
NASA NTRS1991

Bench-level characterization of a CMOS standard-cell D-latch using alpha-particle sensitive test circuits

A methodology is described for predicting the SEU susceptibility of a standard-cell D-latch using an alpha-particle sensitive SRAM, SPICE critical charge simulation results, and alpha-particle interaction physics. Measurements were made on a 1.6-micron n-well CMOS 4-kb test SRAM irradiated with an Am-241 alpha-particle source. A collection depth of 6.09 micron was determined using these results and TRIM computer code. Using this collection depth and SPICE derived critical charge results on the latch design, an LET threshold of 34 MeV sq cm/mg was predicted. Heavy ion tests were then performed on the latch and an LET threshold of 41 MeV sq cm/mg was determined.

Blaes, B. R.↗
DOE OSTI2016

Structure of the Photo-catalytically Active Surface of SrTiO 3

A major goal of energy research is to use visible light to cleave water directly, without an applied voltage, into hydrogen and oxygen. Although SrTiO 3 requires ultraviolet light, after four decades, it is still the "gold standard" for the photo-catalytic splitting of water. It is chemically robust and can carry out both hydrogen and oxygen evolution reactions without an applied bias. While ultrahigh vacuum surface science techniques have provided useful insights, we still know relatively little about the structure of these electrodes in contact with electrolytes under operating conditions. Here, we report the surface structure evolution of a n-SrTiO 3 electrode during water splitting, before and after "training" with an applied positive bias. Operando high-energy X-ray reflectivity measurements demonstrate that training the electrode irreversibly reorders the surface. Scanning electrochemical microscopy at open circuit correlates this training with a 3-fold increase of the activity toward the photo-induced water splitting. A novel first-principles joint density functional theory simulation, constrained to the X-ray data via a generalized penalty function, identifies an anatase-like structure as the more active, trained surface.

36 MATERIALS SCIENCE↗
DOE OSTI2014

A 4H Silicon Carbide Gate Buffer for Integrated Power Systems

A gate buffer fabricated in a 2-mu m 4H silicon carbide (SiC) process is presented. The circuit is composed of an input buffer stage with a push-pull output stage, and is fabricated using enhancement mode N-channel FETs in a process optimized for SiC power switching devices. Simulation and measurement results of the fabricated gate buffer are presented and compared for operation at various voltage supply levels, with a capacitive load of 2 nF. Details of the design including layout specifics, simulation results, and directions for future improvement of this buffer are presented. In addition, plans for its incorporation into an isolated high-side/low-side gate-driver architecture, fully integrated with power switching devices in a SiC process, are briefly discussed. This letter represents the first reported MOSFET-based gate buffer fabricated in 4H SiC.

Ericson, N↗