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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,351 records · Page 75
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Wave Tank Testing Report for Controls Validation of a Heaving Point Absorber

The core objectives of this project is to improve the power capture of three different wave energy conversion (WEC) devices by more than 50% using an advanced control system and validate the attained improvements using wave tank and full scale testing. In parallel, we will bring along the development of a wave prediction system that is required to enable effective control and test it at full scale. The purposes of this report are to: 1. Plan and document the 1/25th scale device testing at the wave-tank facility; 2. Document the test article, setup and methodology, sensor and instrumentation, mooring, electronics, wiring, and data flow and quality assurance; 3. Communicate the testing results between the associated members; 4. Facilitate reviews that will help to ensure all aspects (risk, safety, testing procedures, etc.); 5. Provide a systematic guide to setting up, executing and decommissioning the experiment.

16 TIDAL AND WAVE POWER↗
DOE OSTI2015

LaAlO{sub 3} thickness window for electronically controlled magnetism at LaAlO{sub 3}/SrTiO{sub 3} heterointerfaces

Complex-oxide heterostructures exhibit rich physical behavior such as emergent conductivity, superconductivity, and magnetism that are intriguing for scientific reasons as well as for potential technological applications. It was recently discovered that in-plane magnetism at the LaAlO{sub 3}/SrTiO{sub 3} (LAO/STO) interface can be electronically controlled at room temperature. Here, we employ magnetic force microscopy to investigate electronically controlled ferromagnetism at the LAO/STO interface with LAO thickness t varied from 4 unit cell (u.c.) to 40 u.c. Magnetic signatures are observed only within a thickness window 8 u.c. ≤ t ≤ 25 u.c. Within this window, the device capacitance corresponds well to the expected geometric value, while for thicknesses outside this window, the capacitance is strongly suppressed. The ability to modulate electronic and magnetic properties of LAO/STO devices depends on the ability to control carrier density, which is in turn constrained by intrinsic tunneling mechanisms.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Voltage control of magnetism in Fe3-xGeTe2/In2Se3 van der Waals ferromagnetic/ferroelectric heterostructures

Abstract We investigate the voltage control of magnetism in a van der Waals (vdW) heterostructure device consisting of two distinct vdW materials, the ferromagnetic Fe 3- x GeTe 2 and the ferroelectric In 2 Se 3 . It is observed that gate voltages applied to the Fe 3- x GeTe 2 /In 2 Se 3 heterostructure device modulate the magnetic properties of Fe 3- x GeTe 2 with significant decrease in coercive field for both positive and negative voltages. Raman spectroscopy on the heterostructure device shows voltage-dependent increase in the in-plane In 2 Se 3 and Fe 3- x GeTe 2 lattice constants for both voltage polarities. Thus, the voltage-dependent decrease in the Fe 3- x GeTe 2 coercive field, regardless of the gate voltage polarity, can be attributed to the presence of in-plane tensile strain. This is supported by density functional theory calculations showing tensile-strain-induced reduction of the magnetocrystalline anisotropy, which in turn decreases the coercive field. Our results demonstrate an effective method to realize low-power voltage-controlled vdW spintronic devices utilizing the magnetoelectric effect in vdW ferromagnetic/ferroelectric heterostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Will Stochastic Devices Play Nice With Others in Neuromorphic Hardware?: There’s More to a Probabilistic System Than Noisy Devices

Achieving brain-like efficiency in computing requires a co-design between the development of neural algorithms, brain-inspired circuit design, and careful consideration of how to use emerging devices. The recognition that leveraging device-level noise as a source of controlled stochasticity represents an exciting prospect of achieving brain-like capabilities in probabilistic neural algorithms, but the reality of integrating stochastic devices with deterministic devices in an already-challenging neuromorphic circuit design process is formidable. Here, we explore how the brain combines different signaling modalities into its neural circuits as well as consider the implications of more tightly integrated stochastic, analog, and digital circuits. Further, by acknowledging that a fully CMOS implementation is the appropriate baseline, we conclude that if mixing modalities is going to be successful for neuromorphic computing, it will be critical that device choices consider strengths and limitations at the overall circuit level.

42 ENGINEERING↗
DOE OSTI2014

Enhanced Confinement Scenarios Without Large Edge Localized Modes in Tokamaks: Control, Performance, and Extrapolability Issues for ITER

Large edge localized modes (ELMs) typically accompany good H-mode confinement in fusion devices, but can present problems for plasma facing components because of high transient heat loads. Here the range of techniques for ELM control deployed in fusion devices is reviewed. The two baseline strategies in the ITER baseline design are emphasized: rapid ELM triggering and peak heat flux control via pellet injection, and the use of magnetic perturbations to suppress or mitigate ELMs. While both of these techniques are moderately well developed, with reasonable physical bases for projecting to ITER, differing observations between multiple devices are also discussed to highlight the needed community R & D. In addition, recent progress in ELM-free regimes, namely Quiescent H-mode, I-mode, and Enhanced Pedestal H-mode is reviewed, and open questions for extrapolability are discussed. Finally progress and outstanding issues in alternate ELM control techniques are reviewed: supersonic molecular beam injection, edge electron cyclotron heating, lower hybrid heating and/or current drive, controlled periodic jogs of the vertical centroid position, ELM pace-making via periodic magnetic perturbations, ELM elimination with lithium wall conditioning, and naturally occurring small ELM regimes.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

Gate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices

We present an analysis method for GaN-based metal-insulator-semiconductor (MIS) devices by using capacitance-frequency-temperature (C-f-T) mapping to evaluate the gate-control efficiency and the interface state density, both exhibiting correlations with the linear-region intrinsic transconductance. The effectiveness of the method was exemplified by application to AlN/AlGaN/GaN MIS devices to elucidate the properties of AlN-AlGaN interfaces depending on their formation processes. Using the C-f-T mapping, we extract the gate-bias-dependent activation energy with its derivative giving the gate-control efficiency, from which we evaluate the AlN-AlGaN interface state density through the Lehovec equivalent circuit in the DC limit. It is shown that the gate-control efficiency and the interface state density have correlations with the linear-region intrinsic transconductance, all depending on the interface formation processes. In addition, we give characterization of the AlN-AlGaN interfaces by using X-ray photoelectron spectroscopy, in relation with the results of the analysis.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Voltage-controllable generator of pure spin current: A three-terminal model

Three-terminal devices have been frequently proposed to generate the pure spin current. However, the controllability and stability of pure spin current still needs to be improved. In this paper, a three-terminal device, composed of a ferromagnetic metallic lead and two nonmagnetic semiconductor leads coupled with a quantum dot, is employed to study the properties of electron spin transport. The results show that when the external voltage on one of nonmagnetic semiconductor leads is adjusted to a proper range, a pure spin current plateau or a fully spin-polarized current plateau appears in another nonmagnetic semiconductor lead. In a wide range of external voltage, the pure spin current or the spin-polarized current is kept unchanged. Since the change of temperature may considerably influence the spin-polarization of current and is inevitable actually, we studied the corresponding compensation to keep the pure spin current unchanged. Furthermore, the effect of device parameters on the pure spin current is also investigated.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

A Reference Governor for Plasma-Shape Control in Tokamaks

Tokamaks are torus-shaped devices where a high-temperature, ionized gas (i.e. a plasma) is confined by means of helical magnetic fields. The ultimate goal of tokamaks is producing net electrical energy by means of nuclear-fusion reactions within the plasma. The shape of the plasma inside the tokamak is closely related with its confinement characteristics and, therefore, with the produced fusion power. In order to achieve and maintain plasma shapes that maximize the fusion yield, feedback controllers have been successfully developed during the years. However, machine-protection and plasma-stability requirements impose hard constraints on the plasma-shape targets that can be safely achieved by a feedback controller. In this work, a reference governor is proposed to provide, in real time, plasma-shape targets that fulfill the aforementioned safety requirements. The reference governor calculates such plasma-shape targets in response to changes in the state of the closed-loop system, as well as disturbances in the plasma energy and current. Here, the reference-governor design is based on a dynamical model of the plasma electromagnetic response. Simulation tests of the reference governor have been carried out for different plasma scenarios in the DIII-D tokamak to emulate realistic cases where safety may be compromised.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2013

Multilayer Microfluidic Devices Created From A Single Photomask

The time and expense associated with high quality photomask production can discourage the creation of multilayer microfluidic devices, as each layer currently requires a separate photomask. Here we describe an approach in which multilayer microfabricated devices can be created from a single photomask. The separate layers and their corresponding alignment marks are arranged in separate halves of the mask for two layer devices or quadrants for four layer devices. Selective exposure of the photomask features and rotation of the device substrate between exposures result in multiple copies of the devices on each wafer. Subsequent layers are aligned to patterned features on the substrate with the same alignment accuracy as when multiple photomasks are used. We demonstrate this approach for fabricating devices employing multilayer soft lithography (MSL) for pneumatic valving. MSL devices containing as many as 5 layers (4 aligned fluidic layers plus a manually aligned control layer) were successfully created using this approach. Device design is also modularized, enabling the presence or absence of features as well as channel heights to be selected independently from one another. The use of a single photomask to create multilayer devices results in a dramatic savings of time and/or money required to advance from device design to completed prototype.

47 OTHER INSTRUMENTATION↗
DOE OSTI2019

Cache-based communication between execution threads of a data processing system

A virtual link buffer provides communication between processing threads or cores. A first cache is accessible by a first processing device and a second cache accessible by a second processing device. An interconnect structure couples between the first and second caches and includes a link controller. A producer cache line in the first cache stores data produced by the first processing device and the link controller transfers data in the producer cache line to a consumer cache line in the second cache. Each new data element is stored at a location in the producer cache line indicated by a store position or tail indicator that is stored at a predetermined location in the same cache line. Transferred data are loaded from a location in the consumer cache line indicated by a load position or head indicator that is stored at a predetermined location in the same consumer cache line.

Beard, Jonathan Curtis↗
DOE OSTI2020

Topological materials by molecular beam epitaxy

Topology appears across condensed matter physics to describe a wide array of phenomena which could alter, augment, or fundamentally change the functionality of many technologies. Linking the basic science of topological materials to applications requires producing high-quality thin films. This will enable combining dissimilar materials while utilizing dimensionality, symmetry, and strain to create or control the electronic phase, as well as platforms to fabricate novel devices. Yet, one of the longstanding challenges in the field remains understanding and controlling the basic material properties of epitaxial thin films. Here, we discuss how understanding the fundamental properties of topological materials grown by molecular beam epitaxy (MBE) is key to deepening the knowledge of the basic physics, while developing a new generation of topological devices. A focus will be on the MBE growth of intrinsic materials, creation, and control of superconducting and magnetic topological phases. Addressing these questions in the coming decade will undoubtedly uncover many surprises as new materials are discovered and their growth as high-quality thin films is refined.

2d quantum materials↗
DOE OSTI2016

Reproducible and controllable induction voltage adder for scaled beam experiments

A reproducible and controllable induction adder was developed using solid-state switching devices and Finemet cores for scaled beam compression experiments. A gate controlled MOSFET circuit was developed for the controllable voltage driver. The MOSFET circuit drove the induction adder at low magnetization levels of the cores which enabled us to form reproducible modulation voltages with jitter less than 0.3 ns. Preliminary beam compression experiments indicated that the induction adder can improve the reproducibility of modulation voltages and advance the beam physics experiments.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Localized strain profile in surface electrode array for programmable composite multiferroic devices

In this work, we investigate localized in-plane strains on the microscale, induced by arrays of biased surface electrodes patterned on piezoelectrics. Particular focus is given to the influence that adjacent electrode pairs have on one another to study the impact of densely packed electrode arrays. We present a series of X-ray microdiffraction studies to reveal the spatially resolved micrometer-scale strain distribution. The strain maps with micrometer-scale resolution highlight how the local strain profile in square regions up to 250 x 250 lm 2 in size is affected by the surface electrodes that are patterned on ferroelectric single-crystal [Pb(Mg 1/3 Nb 2/3 )O 3 ] x -[PbTiO 3 ] 1-x . The experimental measurements and simulation results show the influence of electrode pair distance, positioning of the electrode pair, including the angle of placement, and neighboring electrode pair arrangements on the strength and direction of the regional strain. Our findings are relevant to the development of microarchitected strain-mediated multiferroic devices. The electrode arrays could provide array-addressable localized strain control for applications including straintronic memory, probabilistic computing platforms, microwave devices, and magnetic-activated cell sorting platforms.

42 ENGINEERING↗
DOE OSTI2019

Oxidation-Induced Polymerization of InP Surface and Implications for Optoelectronic Applications

InP is among the most studied materials for energy-conversion applications including optoelectronics and photoelectrochemical devices. One of the long-standing challenges with this material, and III–V semiconductors more generally, is to understand and control surface oxide formation, which critically impacts device functionality, performance, and durability. In this work, we integrate advanced in situ ambient pressure X-ray photoelectron spectroscopy (APXPS) and ab initio simulations to reveal the mechanism of the oxidation process on the InP(001) surface. By interpreting the APXPS results through direct ab initio spectroscopic calculations of surface models, and by comparing calculated and measured work functions, we provide an unbiased picture of the chemical evolution of the thermal oxide. Furthermore, at low temperatures (<573 K), O 2 exposure leads to predominant formation of cross-linked PO x units dispersed with submonolayer thickness, which grow into an amorphous two-dimensional (2D) film that is kinetically limited to the surface layer. Increased temperature (>573 K) leads to the polymerization of PO x units and the formation of a complex, inhomogeneous 3D network of surface oxide that is progressively indium rich and phosphorus poor toward the surface. Finally, accelerated phosphorus loss via a hitherto unreported coupled charge-transfer isomer transformation mechanism leads to the formation of a thick, amorphous In 2 O 3 -like oxide at 773 K with very different optoelectronic and hot carrier transportation properties. In addition to unraveling complex mechanisms of surface oxidation, our results suggest the possibility of deliberately tuning oxide composition by leveraging competition between thermodynamic and kinetic factors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

Direct 3D Printing of Catalytically Active Structures

3D printing of materials with active functional groups can provide custom-designed structures that promote chemical conversions. Catalytically active architectures were produced by photopolymerizing bifunctional molecules using a commercial stereolithographic 3D printer. Functionalities in the monomers included a polymerizable vinyl group to assemble the 3D structures and a secondary group to provide them with active sites. The 3D-printed architectures containing accessible carboxylic acid, amine, and copper carboxylate functionalities were catalytically active for the Mannich, aldol, and Huisgen cycloaddition reactions, respectively. The functional groups in the 3D-printed structures were also amenable to post-printing chemical modification. And as proof of principle, chemically active cuvette adaptors were 3D printed and used to measure in situ the kinetics of a heterogeneously catalyzed Mannich reaction in a conventional solution spectrophotometer. In addition, 3D-printed millifluidic devices with catalytically active copper carboxylate complexes were used to promote azide-alkyne cycloaddition under flow conditions. The importance of controlling the 3D architecture of the millifluidic devices was evidenced by enhancing reaction conversion upon increasing the complexity of the 3D prints.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

Quantum dynamics of nuclear spins and spin relaxation in organic semiconductors

3D printing of materials with active functional groups can provide custom-designed structures that promote chemical conversions. Herein, catalytically active architectures were produced by photopolymerizing bifunctional molecules using a commercial stereolithographic 3D printer. Functionalities in the monomers included a polymerizable vinyl group to assemble the 3D structures and a secondary group to provide them with active sites. The 3D-printed architectures containing accessible carboxylic acid, amine, and copper carboxylate functionalities were catalytically active for the Mannich, aldol, and Huisgen cycloaddition reactions, respectively. The functional groups in the 3D-printed structures were also amenable to post-printing chemical modification. As proof of principle, chemically active cuvette adaptors were 3D printed and used to measure in situ the kinetics of a heterogeneously catalyzed Mannich reaction in a conventional solution spectrophotometer. In addition, 3D-printed millifluidic devices with catalytically active copper carboxylate complexes were used to promote azide-alkyne cycloaddition under flow conditions. The importance of controlling the 3D architecture of the millifluidic devices was evidenced by enhancing reaction conversion upon increasing the complexity of the 3D prints.

3D printing↗
DOE OSTI2021

Robust hierarchical dispatch for residential distribution network management considering home thermal flexibility and model predictive control

In the transactive energy (TE) paradigm, the devices of participative consumers, or prosumers, may be aggregated and employed to drive operational objectives at the network level. Home heating, ventilation and air-conditioning (HVAC) systems in particular are well-suited to modulate their behaviours based on both home thermal flexibility and requests from the utility grid. This paper develops a robust, hierarchical power dispatch scheme in the context of a residential distribution network. The formulation couples a unique, multiphase linear distribution optimal power flow (OPF) at the upper level with model predictive control (MPC)-based HVAC fleet controllers at the lower level. The proposed approach is tested on nearly 2000 homes with a three-phase distribution network in an intraday market setting, where two major applications are explored and analysed.

24 POWER TRANSMISSION AND DISTRIBUTION↗