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At least 1,333 records · Page 74

Ion extraction capabilities of two-grid accelerator systems

An experimental investigation into the ion extraction capabilities of two-grid accelerator systems common to electrostatic ion thrusters is described. A large body of experimental data which facilitates the selection of the accelerator system geometries and operating parameters necessary to maximize the extracted ion current is presented. Results suggest that the impingement-limited perveance is not dramatically affected by reductions in screen hole diameter to 0.5 mm. Impingement-limited performance is shown to depend most strongly on grid separation distance, accelerator hole diameter ratio, the discharge-to-total accelerating voltage ratio, and the net-to-total accelerating voltage ratio. Results obtained at small grid separation ratios suggest a new grid operating condition where high beam current per hole levels are achieved at a specified net accelerating voltage. It is shown that this operating condition is realized at an optimum ratio of net-to-total accelerating voltage ratio which is typically quite high.

Rovang, D. C.↗

Characteristics of arc currents on a negatively biased solar cell array in a plasma

The time dependence of the emitted currents during arcing on solar cell arrays is being studied. The arcs are characterized using three parameters: the voltage change of the array during the arc (i.e., the charge lost), the peak current during the arc, and the time constant describing the arc current. This paper reports the dependence of these characteristics on two array parameters, the interconnect bias voltage and the array capacitance to ground. It was found that the voltage change of the array during an arc is nearly equal to the bias voltage. The array capacitance, on the other hand, influences both the peak current and the decay time constant of the arc. Both of these characteristics increase with increasing capacitance.

Snyder, D. B.↗

Advanced in solid state switchgear technology for large space power systems

High voltage solid state remote power controllers (RPC's) and the required semiconductor power switches to provide baseline technology for large, high power distribution systems in the Space Station, all electric airplane and other advanced aerospace applications were developed. The RPC's were developed for dc voltages from 28 to 1200 V and ac voltages of 115, 230, and 440 V at frequencies of 400 Hz to 20 kHz. The benefits and operation of solid state RPC's and highlights of several developments to bring the RPC to technology readiness for future aerospace needs are examined. The 28 V dc Space Shuttle units, three RPC types at 120 V dc, two at 270/300 V dc, two at 230 V ac and several high power RPC models at voltages up to 1200 V dc with current ratings up to 100 A are reviewed. New technology programs to develop a new family of (DI)2 semiconductor switches and 20 kHz, 440 V ac RPC's are described.

Sundberg, G. R.↗

Correcting for Nonlinearity in a Photodetector

Simple positive-feedback circuit varies bias voltage as necessary. Ideal detector biased with constant voltage, detector current proportional to photon flux plus constant offset. Detector connected between inverting input and ground, and feedback from operational amplifier through feedback resistor Rf make voltage at inverting input equal to noninverting input. Bias voltage held constant. Principle applied to linearizing mercury cadmium telluride infrared detectors in Fourier-transform spectrometers and other spectral and imaging instruments.

Schindler, R. A.↗

Method of measuring field funneling and range straggling in semiconductor charge-collecting junctions

Electric-field funneling length is measured while irradiating a semiconductor charge-collecting junction with electron-hole-pair generating charged particles at a first junction bias voltage. The bias voltage is then reduced to a second level in order to reduce the depth of the depletion region such that the total charge can no longer be collected by drift and measured in the energy band previously displayed in the multichannel analyzer. This is representative of the maximum electric field funneling length which may be calculated by measuring the difference at the second bias voltage level of the depletion width and the ion penetration range. The bias voltage is further lowered to a third level at which the particles are collected over a spread of energy levels while at least some of the particles are still collected at the selected energy level. From this the different depths of penetration of the particles are determined while additional effects due to diffusion are minimized.

Zoutendyk, J. A.↗

A mathematical approach for evaluating nickel-hydrogen cells

A mathematical equation is presented which gives a quantitative relationship between time-voltage discharge curves, when a cell's ampere-hour capacity is determined at a constant discharge current. In particular the equation quantifies the initial exponential voltage decay; the rate of voltage decay; the overall voltage shift of the curve and the total capacity of the cell at the given discharge current. The results of 12 nickel-hydrogen boiler plate cells cycled to 80 percent depth-of-discharge (DOD) are discussed in association with these equations.

Leibecki, H. F.↗

Onset phenomena in MPD thrusters

An experimental study has clarified some aspects of MPD thruster onset phenomena. The steep increase in terminal voltage that occurs as the onset current is approached may have different causes, depending on the propellant injection geometry. For propellant injection at the cathode radius, terminal voltage increase corresponds to a growing anode fall voltage; for injection at a larger radius, the increase is related to the back emf in the near-cathode plasma. The formation of the onset current pattern within the arc has been mapped experimentally as the thruster responds to an input current step which rises from below onset to the onset value. The appearance of terminal voltage hash at onset correlates with the extension into the exhaust region of a significant fraction of the arc current.

Barnett, J. W.↗

Test results of a 60 volt bipolar nickel-hydrogen battery

In July, l986, a high-voltage nickel-hydrogen battery was assembled at the NASA Lewis Research Center. This battery incorporated bipolar construction techniques to build a 50-cell stack with approximately 1.0 A-hr capacity (C) and an open-circuit voltage of 65 V. The battery was characterized at both low and high current rates prior to pulsed and nonpulsed discharges. Pulse discharges at 5 and 10 C were performed before placing the battery on over 1400, 40% depth-of-discharge, low-earth-orbit cycles. The successful demonstration of a high-voltage bipolar battery in one containment vessel has advanced the technology to where nickel-hydrogen high-voltage systems can be constructed of several modules instead of hundreds of individual cells.

Cataldo, Russell L.↗

Parametric and cycle tests of a 40-AH bipolar nickel-hydrogen battery

The performance of a 12 V, 40 ampere-hour bipolar battery during various charge current, discharge current, temperature, and pressure operating conditions is investigated. The cell voltages, temperatures, ampere-hours, and watt-hours derived from the charge/discharge cycle tests are studied. Consideration is given to battery voltage and discharge capacity as a function of discharge current, the correlation between energy delivered on a discharge and battery temperature, battery voltage response to pulse discharges, and the voltage-temperature relationship. The data reveal that the bipolar Ni-H battery is applicable to high power systems.

Cataldo, R. L.↗

A study of charged particles/radiation damage to VLSI device materials

Future spacecraft systems such as the manned space station will be subjected to low-dose long term radiation particles. Most electronic systems are affected by such particles. There is therefore a great need to understand device physics and failure mechanisms affected by radiation and to design circuits that would be less susceptible to radiation. Using 2 MeV electron radiation and bias temperature aging, it was found that MOS capacitors that were prepositively biased have lower flatband voltage shift and lesser increase in density of surface state charge than those that were not prepositively biased. In addition, it was shown that there is continued recovery of flatband voltage and density of state charge in irradiated capacitors during both room temperature anneal and 137 degree anneal. When nMOS transistors were subjected to 1 MeV proton radiation, charge pumping and current versus voltage measurements indicated that transconductance degradation, threshold voltage shifts and changes in interface states density may be the primary cause of nMOS transistor failure after radiation. Simulation studies using SPICE were performed on CMOS SRAM cells of various transistor sizes. It is shown that transistor sizing affects the noise margins of CMOS SRAM cells, and that as the beta ratio of the transistors of the CMOS SRAM cell decreases, the effective noise margin of the SRAM cell increases. Some suggestions were made in connection with the design of CMOS SRAMS that are hardened against single event upsets.

Okyere, John G.↗

Test results of a 60 volt bipolar nickel-hydrogen battery

In July 1986, a high-voltage nickel-hydrogen battery was assembled at the NASA Lewis Research Center. This battery incorporated bipolar construction techniques to build a 50-cell stack with approximately 1.0 A-hr capacity (C) and an open-circuit voltage of 65 V. The battery was characterized at both low and high current rates prior to pulsed and nonpulsed discharges. Pulse discharges at 5 and 10 C were performed before placing the battery on over 1400, 40-percent depth-of-discharge, low-earth-orbit cycles. The successful demonstration of a high-voltage bipolar battery in one containment vessel has advanced the technology to where nickel-hydrogen high-voltage systems can be constructed of several modules instead of hundreds of individual cells.

Cataldo, Robert L.↗

Characteristics of annealed p/n junctions between GaAs and Si(100)

Electrical characteristics of a GaAs(p)/Si(n) interface were determined from capacitance-voltage, current-voltage, and secondary ion mass spectroscopy (SIMS) measurements and compared to those on GaAs(p) epitaxial layers on GaAs(n) substrates. The comparison was made between the junctions as grown, and after an anneal at 850 C for 20 min in 10 percent forming gas under an As overpressure. For the GaAs/Si junction the ideality factor changed from 2 or larger to 1.5 and the apparent intercept voltage changed from 2.5 to 1.3 V after annealing. For the GaAs homojunction, the intercept voltage increased from 1.1 to 1.3 V. In addition, the excess current in the forward and reverse bias conditions dropped drastically in the heterojunction. No movement of the metallurgical junction was discernible to within the resolution capability of SIMS. The junction properties obtained by annealing suggest an atomic restructuring of the Si(100) interface during growth or annealing. These new results raise the possibility that the GaAs/Si interface can be made into an electrically viable junction and incorporated into active devices.

Unlu, M. S.↗

Effect of field-aligned potential drop in a global magnetosphere-ionosphere coupling model

Effects of field-aligned potential drops on the magnetosphere-ionosphere coupling in a steady state are studied on a global ionospheric scale. It is shown that a constant-current generator can support a larger field-aligned potential drop than a constant voltage generator under similar conditions. The magnetospheric convection pattern is distorted more in the constant current generator case than in the constant voltage generator case. The main difference between a constant current generator and a constant voltage generator is found to lie in their ability to adjust the vorticity of the magnetospheric convection. The results show that a constant current generator allows the vorticity of the magnetospheric convection to adjust so that the field-aligned current can be kept constant under the loading influence of the field-aligned potential. On the other hand, a constant voltage generator by definition cannot adjust the vorticity of the magnetospheric convection to maintain the field-aligned current under the loading influence of the field-aligned potential.

Kan, J. R.↗

Power-Supply-Conditioning Circuit

Fluctuations of voltage suppressed in power supplies for precise radio-frequency circuits. Circuit suppresses both periodic and random deviations of dc supply voltage from desired steady level. Highly-stable feedback voltage regulator, conditioner intended in conjunction with conventional power-supply circuit to provide constant voltage to atomic frequency standard or other precise oscillator. Without conditioners, outputs of most commercial power supplies contain fluctuations causing unacceptably-large phase and amplitude modulation of precise oscillators.

Primas, L. E.↗

Synchronous Half-Wave Rectifier

Synchronous rectifying circuit behaves like diode having unusually low voltage drop during forward-voltage half cycles. Circuit particularly useful in power supplies with potentials of 5 Vdc or less, where normal forward-voltage drops in ordinary diodes unacceptably large. Fabricated as monolithic assembly or as hybrid. Synchronous half-wave rectifier includes active circuits to attain low forward voltage drop and high rectification efficiency.

Rippel, Wally E.↗

Variable speed induction motor operation from a 20-kHz power bus

Induction motors are recognized for their simple rugged construction. To date, however, their application to variable speed or servo drives was hampered by limitations on their control. Induction motor drives tend to be complex and to display troublesome low speed characteristics due in part to nonsinusoidal driving voltages. A technique was developed which involves direct synthesis of sinusoidal driving voltages from a high frequency power bus and independent control of frequency and voltages. Separation of frequency and voltage allows independent control of rotor and stator flux, full four quadrant operation, and instantaneous torque control. Recent test results, current status of the technology, and proposed aerospace applications will be discussed.

Hansen, Irving G.↗

A versatile power converter for high-frequency link systems

A single-phase HF link appears to be an attractive alternative to the dc link commonly used in power conversion systems. Here, a power converter suitable for one-step conversion of the single-phase HF link voltage to the three-phase LF voltages typically required for interfacing with system sources and loads is proposed. The converter utilizes zero-voltage switching principles to minimize switching losses and an easy-to-implement technique of pulse-density modulation for the control of the amplitude, frequency, and waveshape of the synthesized LF signals. Adaptation of the proposed topology for power conversion to single-phase ac and dc voltage or current outputs is shown to be straightforward. The feasibility of the proposed power circuit and the control technique has been experimentally verified.

Sood, Pradeep K.↗

The physics of positively biased conductors surrounded by dielectrics in contact with a plasma

The physics of a positively biased conductor surrounded by dielectrics in contact with plasma is investigated. It is shown that because of the presence of secondary emission from the surrounding dielectrics, the voltage of the surfaces near the conductor has three solutions. The high- and low-voltage solutions are stable, while the intermediate-voltage solution is unstable. This theory is applied to explain the snapover effect observed on high-voltage solar arrays that involve the use of highly biased surfaces in contact with the space environment.

Hastings, Daniel E.↗