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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,333 records · Page 74
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Autonomous x-ray scattering

Autonomous experimentation (AE) is an emerging paradigm that seeks to automate the entire workflow of an experiment, including—crucially—the decision-making step. Beyond mere automation and efficiency, AE aims to liberate scientists to tackle more challenging and complex problems. We describe our recent progress in the application of this concept at synchrotron x-ray scattering beamlines. We automate the measurement instrument, data analysis, and decision-making, and couple them into an autonomous loop. We exploit Gaussian process modeling to compute a surrogate model and associated uncertainty for the experimental problem, and define an objective function exploiting these. We provide example applications of AE to x-ray scattering, including imaging of samples, exploration of physical spaces through combinatorial methods, and coupling to in situ processing platforms These uses demonstrate how autonomous x-ray scattering can enhance efficiency, and discover new materials.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2023

Deterministic nanoscale quantum spin-defect implantation and diffraction strain imaging

Abstract Local crystallographic features negatively affect quantum spin defects by changing the local electrostatic environment, often resulting in degraded or varied qubit optical and coherence properties. Few tools exist that enable the deterministic synthesis and study of such intricate systems on the nano-scale, making defect-to-defect strain environment quantification difficult. In this paper, we highlight state-of-the-art capabilities from the U.S. Department of Energy’s Nanoscale Science Research Centers that directly address these shortcomings. Specifically, we demonstrate how complementary capabilities of nano-implantation and nano-diffraction can be used to demonstrate the quantum relevant, spatially deterministic creation of neutral divacancy centers in 4H silicon carbide, while investigating and characterizing these systems on the ≤ 25 nm scale with strain sensitivities on the order of 1 × 10 − 6 , relevant to defect formation dynamics. This work lays the foundation for ongoing studies into the dynamics and deterministic formation of low strain homogeneous quantum relevant spin defects in the solid state.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2023

Granular metals with SiN x dielectrics

Understanding and controlling nanoscale interface phenomena, such as band bending and secondary phase formation, is crucial for electronic device optimization. In granular metal (GM) studies, where metal nanoparticles are embedded in an insulating matrix, the importance of interface phenomena is frequently neglected. Here, we demonstrate that GMs can serve as an exemplar system for evaluating the role of secondary phases at interfaces through a combination of x-ray photoemission spectroscopy (XPS) and electrical transport studies. We investigated SiN x as an alternative to more commonly used oxide-insulators, as SiN x -based GMs may enable high temperature applications when paired with refractory metals. Comparing Co-SiN x and Mo-SiN x GMs, we found that, in the tunneling-dominated insulating regime, Mo-SiN x had reduced metal-silicide formation and orders-of-magnitude lower conductivity. XPS measurements indicate that metal-silicide and metal-nitride formation are mitigatable concerns in Mo-SiN x . Given the metal-oxide formation seen in other GMs, SiN x is an appealing alternative for metals that readily oxidize. Furthermore, SiN x provides a path to metal-nitride nanostructures, potentially useful for various applications in plasmonics, optics, and sensing.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2023

Large-area epitaxial growth of InAs nanowires and thin films on hexagonal boron nitride by metal organic chemical vapor deposition

Large-area epitaxial growth of III–V nanowires and thin films on van der Waals substrates is key to developing flexible optoelectronic devices. In our study, large-area InAs nanowires and planar structures are grown on hexagonal boron nitride templates using metal organic chemical vapor deposition method without any catalyst or pre-treatments. The effect of basic growth parameters on nanowire yield and thin film morphology is investigated. Under optimised growth conditions, a high nanowire density of 2.1 x 10 9 cm -2 is achieved. A novel growth strategy to achieve uniform InAs thin film on h-BN/SiO 2 /Si substrate is introduced. The approach involves controlling the growth process to suppress the nucleation and growth of InAs nanowires, while promoting the radial growth of nano-islands formed on the h-BN surface. A uniform polycrystalline InAs thin film is thus obtained over a large area with a dominant zinc-blende phase. The film exhibits near-band-edge emission at room temperature and a relatively high Hall mobility of 399 cm -2 /(Vs). This work suggests a promising path for the direct growth of large-area, low-temperature III–V thin films on van der Waals substrates.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2023

Advanced techniques in automated high-resolution scanning transmission electron microscopy

Scanning transmission electron microscopy is a common tool used to study the atomic structure of materials. It is an inherently multimodal tool allowing for the simultaneous acquisition of multiple information channels. Despite its versatility, however, experimental workflows currently rely heavily on experienced human operators and can only acquire data from small regions of a sample at a time. Here, we demonstrate a flexible pipeline-based system for high-throughput acquisition of atomic-resolution structural data using an all-piezo sample stage applied to large-scale imaging of nanoparticles and multimodal data acquisition. As a result, the system is available as part of the user program of the Molecular Foundry at Lawrence Berkeley National Laboratory.

4D-STEM↗
DOE OSTI2023

Mitigating challenges in aberration-corrected electron-beam lithography on electron-opaque substrates

Aberration-corrected electron-beam lithography (AC-EBL) using ultra-thin electron transparent membranes has achieved single-digit nanometer resolution in two widely used electron-beam resists: poly (methyl methacrylate) (PMMA) and hydrogen silsesquioxane. On the other hand, AC-EBL implementation on thick, electron-opaque substrates is appealing for conventional top-down fabrication of quantum devices with nanometer-scale features. To investigate the performance of AC-EBL on thick substrates, we measured the lithographic point spread function of a 200 keV aberration-corrected scanning transmission electron microscope by defining both positive and negative patterns in PMMA thin films, spin-cast on thick SiO 2 /Si substrates. We present the problems encountered during pre-exposure beam focusing and discuss methods to overcome them. In addition, applying some of these methods using commercial 50 nm thick SiN X membranes with thick Si support frames, we printed arrays of holes in PMMA with pitches around 26 nm on SiN X /Si substrates with increasing Si thickness. Here, our results show that proximity effects from even 50 nm thick SiN X membranes limit hole arrays to 20 nm pitch; however, down to this limit, the effect of the substrate thickness on the pattern quality is minimal. These results highlight the need for novel resists less susceptible to proximity effects, or resists which can be used directly, after development, as the dielectric material in periodic gates in 2D quantum devices.

2D quantum devices↗
DOE OSTI2024

Thermal scanning probe and laser lithography for patterning nanowire based quantum devices

Semiconductor nanowire (NW) quantum devices offer a promising path for the pursuit and investigation of topologically-protected quantum states, and superconducting and spin-based qubits that can be controlled using electric fields. Theoretical investigations into the impact of disorder on the attainment of dependable topological states in semiconducting nanowires with large spin–orbit coupling and g-factor highlight the critical need for improvements in both growth processes and nanofabrication techniques. In this work, we used a hybrid lithography tool for both the high-resolution thermal scanning probe lithography and high-throughput direct laser writing of quantum devices based on thin InSb nanowires with contact spacing of 200 nm. Electrical characterization demonstrates quasi-ballistic transport. The methodology outlined in this study has the potential to reduce the impact of disorder caused by fabrication processes in quantum devices based on 1D semiconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Magnetic tunnel junction random number generators applied to dynamically tuned probability trees driven by spin orbit torque

Abstract Perpendicular magnetic tunnel junction (pMTJ)-based true-random number generators (RNGs) can consume orders of magnitude less energy per bit than CMOS pseudo-RNGs. Here, we numerically investigate with a macrospin Landau–Lifshitz-Gilbert equation solver the use of pMTJs driven by spin–orbit torque to directly sample numbers from arbitrary probability distributions with the help of a tunable probability tree. The tree operates by dynamically biasing sequences of pMTJ relaxation events, called ‘coinflips’, via an additional applied spin-transfer-torque current. Specifically, using a single, ideal pMTJ device we successfully draw integer samples on the interval [0, 255] from an exponential distribution based on p -value distribution analysis. In order to investigate device-to-device variations, the thermal stability of the pMTJs are varied based on manufactured device data. It is found that while repeatedly using a varied device inhibits ability to recover the probability distribution, the device variations average out when considering the entire set of devices as a ‘bucket’ to agnostically draw random numbers from. Further, it is noted that the device variations most significantly impact the highest level of the probability tree, with diminishing errors at lower levels. The devices are then used to draw both uniformly and exponentially distributed numbers for the Monte Carlo computation of a problem from particle transport, showing excellent data fit with the analytical solution. Finally, the devices are benchmarked against CMOS and memristor RNGs, showing faster bit generation and significantly lower energy use.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2024

Growth of metal nanoparticles in hydrocarbon atmosphere of arc discharge

A direct current (DC) arc discharge is a widely used method for large-scale production of metal nanoparticles, core–shell particles, and carbon nanotubes. Here, the growth of iron nanoparticles is explored in a modified DC arc discharge. Iron particles are produced by the evaporation of an anode, made from low-carbon steel. Methane admixture into argon gas serves as a carbon source. Electron microscopy and elemental analysis suggest that methane and/or products of its decomposition adhere to iron clusters forming a carbon shell, which inhibits iron particle growth until its full encapsulation, at which point the iron core growth is ceased. Experimental observations are explained using an aerosol growth model. The results demonstrate the path to manipulate metal particle size in a hydrocarbon arc environment.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2020

Dual wavelength operation of the GaSb-based Y-branch distributed Bragg reflector lasers near 2.1 μ m

The GaSb-based diode lasers operating simultaneously at two wavelengths near 2.1 μm have been designed and fabricated. The Y-branch devices used the 6th order distributed Bragg reflectors (DBR) to provide spectrally selective feedback. The laser active region contained two asymmetric quantum wells with allowed optical transitions between two lowest electron (e1 and e2) and top hole (hh1) subbands. The laser emission lines loosely matched the e1-hh1 and e2-hh1 optical transitions with separation corresponding to ~3.1 THz. Finally, the 10 μm wide deeply etched straight ridge DBR lasers demonstrated stable single mode operation with more than 50 mW of output power.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2020

Effects of elastic softening and helium accumulation kinetics on surface morphological evolution of plasma-facing tungsten

Based on a continuous-domain model, capable of accessing the spatiotemporal scales relevant to fuzz formation on the surface of plasma-facing component (PFC) tungsten, we report self-consistent simulation results that elucidate the effects of elastic softening and helium (He) accumulation kinetics on the surface morphological response of PFC tungsten. The model accounts for the softening of the elastic moduli in the near-surface region of PFC tungsten, including both thermal softening at high temperature and softening due to He accumulation upon He implantation. The dependence of the elastic moduli on the He content follows an exponential scaling relation predicted by molecular-dynamics simulations, while the He content in the near-surface region of PFC tungsten evolves according to a first-order saturation kinetics, consistent with experimental and simulation results reported in the literature. We establish that this elastic softening accelerates both nanotendril growth on the PFC surface and the onset of fuzz formation. We also explore the role of the rate of He accumulation to a saturation level in the near-surface region of irradiated tungsten in the onset of fuzz formation. For PFC tungsten surfaces such as W(110) where, under typical irradiation conditions, the characteristic time scale for stress-driven surface diffusion is comparable to the characteristic time scale for He accumulation, we find that accelerating the rate of He accumulation accelerates the growth rate of nanotendrils emanating from the surface. Additionally, we present a systematic parametric study of the PFC surface morphological response to explore its dependence on the He accumulation kinetics that is controlled by the irradiation conditions for low-energy implantation. Finally, we introduce an incubation time for nanotendril growth on the PFC surface, a concept equivalent to that of incubation fluence discussed in the literature, to predict and explain the minimum exposure time required to observe fuzz formation on PFC tungsten surfaces.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Modeling electron transfer from the barrier in InAs/GaAs quantum dot-well structure

We study single electron tunnelling from the barrier in the binary InAs/GaAs quantum structure including quantum well (QW) and quantum dot (QD). The tunneling is described in the terms of localized/delocalized states and their spectral distribution. The modeling is performed by using the phenomenological effective potential approach for InAs/GaAs heterostructures. The results for the two and three-dimensional models are presented. We focus on the effect of QD-QW geometry variations. The relation to the PL experiments is shown.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Beyond the Anderson rule: importance of interfacial dipole and hybridization in van der Waals heterostructures

Vertical stacking of two-dimensional materials with weak van der Waals (vdW) interactions has laid the ground for breakthroughs in physics as well as in technological applications. Although vdW interactions dominate interlayer binding, interlayer electronic coupling may not be negligible and can lead to properties beyond the superposition of constituent monolayers. Here, studying heterobilayers of transition-metal dichalcogenides (MQ 2 ; M = Mo, Ni, Pt; Q = S, Se) by means of density functional theory calculations, we show two mechanisms that influence the band gaps of vdW heterostructures beyond the Anderson rule: (1) interfacial hybridization (mainly involving out-of-plane states, such as chalcogen p z -states), which leads to an upshift in the valence band maxima and accordingly a decrease in the band gap. (2) Formation of an interfacial electric dipole, resulting in an effective gap increase in type-II junctions. While the former is material specific, depending on the proximity of p z -states to each other and the valence band maxima, the latter can be generally described using a model based on the charge density decay outside the monolayers and the pristine band edge positions with respect to the vacuum level, irrespective of junction type.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Effect of niobium doping on excitonic dynamics in MoSe 2

Abstract Transition metal dichalcogenides (TMDs) have emerged as attractive two-dimensional semiconductors for future electronic and optoelectronic applications. Their charge transport properties, such as conductivity and the type of charge carriers, can be effectively controlled by substitutional doping of the transition metal atoms. However, the effects of doping on the excitonic properties, particularly their dynamical properties, have been less studied. Using Nb-doped MoSe 2 as a case study, we experimentally investigate the effect of doping on excitonic dynamics in TMDs. Transient absorption measurements are used to directly compare the dynamical properties of excitons in Nb-doped MoSe 2 across monolayer, bilayer, and bulk flakes with their undoped counterparts. The exciton lifetimes in Nb-doped flakes are significantly shorter than those in their undoped counterparts. This effect is attributed to the trapping of excitons in defect states introduced by Nb impurities. These results reveal an important consequence of Nb doping on excitonic dynamics in TMDs.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2025

Photocarrier dynamics at the interface between WS 2 and ozone-irradiated graphene

We investigate the photocarrier properties of heterostructures (HSs) formed by WS 2 and ozone-irradiated graphene (OI-graphene), with a focus on the impact of ozone irradiation. Photoluminescence and Raman spectroscopy reveal a pronounced doping effect induced by ozone irradiation on the graphene layer. Transient absorption measurements demonstrate a substantial suppression of charge transfer efficiency across the interface in the presence of ozone molecules. Spatially resolved pump-probe measurements further show a significant reduction in the diffusion coefficient of photocarriers in WS 2 on OI-graphene compared to that of individual WS 2 monolayers. The slower diffusion suggests enhanced spatial separation of electrons and holes in the WS 2 layer, induced by a built-in electric field at the interface. This effect arises from the combined influences of doping and dielectric property changes caused by ozone molecules. These findings highlight the critical influence of ozone irradiation on graphene and HS interfaces, offering valuable insights for the design of future graphene-based two-dimensional HSs.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2020

Hierarchical and scalable integration of nanostructures for energy and environmental applications: a review of processing, devices, and economic analyses

Hierarchical nanostructure, an engineered nanostructure with a higher assembly-level of constituents by low dimensional nano-building blocks, has received extensive attentions in the latest advancements in nanomaterial science and nanotechnology development. The ordered hierarchical nanostructures could offer merits such as more active sites, synergistic properties owing to their geometric complexity and building blocks variation, as well as the resultant multi-functional capabilities. In this review, we specifically focus on the integration approaches that may be feasible for large-scale production and manufacturing of engineered nanomaterials for various industrial applications, and the design criteria of hierarchical nanostructures targeted at various sustainable energy and environmental applications. In addition to chemical synthesis and integration methods, the development and application of hierarchical nanostructures are surveyed in energy conversion, generation, storage, utilization, and sensing devices. Meanwhile, a much-needed survey is also touched upon the techno-economic analyses of engineered nanomaterials, proposing the need of establishing various standard protocols on various factors and parameters that could be envisaged as a guide toward the viable transition to the practices in the future nano-industries.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Large aperture and durable glass-engraved optical metasurfaces using nanoparticle etching masks: prospects and future directions

Abstract Metasurfaces (MSs), or surfaces consisting of engineered spatially oriented sub-wavelength elements—also known as meta-atoms—are quickly becoming a burgeoning field of interest due to their seemingly unparalleled control over the propagation of light. This article will discuss the emergence of a MS technology that is based on dewetting thin metal films to form dry etching masks for MS fabrication. The novelty this process presents is the ability to spatially vary mask features—which translates into spatially varying index of the finished surface—in a way that, rather than writing subwavelength elements one-by-one, writes entire areas at once to provide a route to easily scale the process up to meter-sized optics. Glass-engraved MSs have shown to be laser damage resistant, with damage thresholds close to the parent substrate damage thresholds. Furthermore, these surfaces have proven to be mechanically durable and capable of handling normal loads two orders of magnitude higher than that of an average fingerprint pressure. This indicates that accidental handling contact is not detrimental to the MS optical performance. Also discussed are the foreseeable technological challenges, potential solutions for those obstacles, and some currently unexplored directions for future efforts.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Direct fabrication and characterization of vertically stacked Graphene/h-BN/Graphene tunnel junctions

We have used a lithography free technique for the direct fabrication of vertically stacked two-dimensional (2D) material-based tunnel junctions and characterized by Raman, AFM, XPS. We fabricated Graphene/h-BN/Graphene devices by direct deposition of graphene (bottom layer), h-BN (insulating barrier) and graphene (top layer) sequentially using a plasma enhanced chemical vapor deposition on Si/SiO 2 substrates. The thickness of the h-BN insulating layer was varied by tuning the plasma power and the deposition time. Samples were characterized by Raman, AFM, and XPS. The I-V data follows the barrier thickness dependent quantum tunneling behavior for equally doped graphene layers. The resonant tunneling behavior was observed at room temperature for oppositely doped graphene layers where hydrazine and ammonia were used for n-doping of one of the graphene layers. The resonance with negative differential conductance occurs when the band structures of the two electrodes are aligned. The doping effect of the resonant peak is observed for varying doping levels. The results are explained according to the Bardeen tunneling model.

2D-materials↗