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At least 1,333 records · Page 74

Interfacial triferroicity in monolayer chromium dihalide

Couplings between different ferroics in two-dimensional (2D) materials, with atomic thickness and van der Waals surface, have been long sought but not yet realized. We show the first-principles evidence of unique triferroic couplings in recently synthesized CrI 2 monolayer. Its ferroelasticity with a low switching barrier stems from the Jahn-Teller effect. When coupled with the interaction of a substrate, a type of interfacial ferroelectricity with direction determined by the ferroelastic states can emerge which can be switched following the same low-barrier pathway of ferroelastic switching. The direction of its striped antiferromagnetism is also governed by its ferroelastic states, leading to a coupling of ferroelasticity, ferroelectricity, and magnetism. Such mechanism of multiferroic couplings, denoted as interfacial Jahn-Teller triferroicity, can be applied to other 2D materials such as CuC l2 and their Janus monolayers, enabling electrical manipulation of spintronics for efficient nonvolatile random-access memories.

36 MATERIALS SCIENCE↗

Elasticity of two-dimensional ferroelectrics across their paraelectric phase transformation

The mechanical behavior of two-dimensional (2D) materials across 2D phase changes is unknown, and the finite temperature (T) elasticity of paradigmatic SnSe monolayers—ferroelectric 2D materials turning paraelectric as their unit cell turns from a rectangle into a square—is described here in a progressive manner. To begin with, their zero–T total energy landscape gives way to (Boltzmann-like) averages from which the elastic behavior is determined. Furthermore, these estimates are complemented with results from the strain-fluctuation method, which employs the energy landscape or ab initio molecular dynamics data. All approaches capture the coalescence of elastic moduli < C 11 (T) > = < C 22 (T) > due to the structural transformation. The broad evolution and sudden changes of elastic parameters < C 11 (T) >, < C 22 (T) >, and < C 12 (T) > of these atomically thin phase-change membranes establishes a heretofore overlooked connection among 2D materials and soft matter.

2-dimensional systems↗

Twistronics of Janus transition metal dichalcogenide bilayers

Twisted multilayers of two-dimensional (2D) materials are an increasingly important platform for investigating quantum phases of matter, and in particular, strongly correlated electrons. The moiré pattern introduced by the relative twist between layers creates effective potentials of long wavelength, leading to electron localization. However, in contrast to the abundance of 2D materials, few twisted heterostructures have been studied until now. Here, in this study, we develop a first-principles continuum theory to study the electronic bands introduced by moire patterns of twisted Janus transition metal dichalcogenide (TMD) homo- and heterobilayers. The model includes lattice relaxation, stacking-dependent effective mass, and Rashba spin-orbit coupling. We then perform a high-throughput generation and characterization of DFT-extracted continuum models for more than a hundred possible combinations of materials and stackings. Our model predicts that the moiré physics and emergent symmetries depend on chemical composition, vertical layer orientation, and twist angle, so that the miniband wave functions can form triangular, honeycomb, and kagome networks. Rashba spin-orbit effects, peculiar of these systems, can dominate the moiré bandwidth at small angles. Our work enables detailed investigation of Janus twisted heterostructures, allowing the discovery and control of novel electronic phenomena.

36 MATERIALS SCIENCE↗

Selective enhancement of Coulomb interactions in planar Weyl fermions

We report on our study of the electron interaction effects in topological two-dimensional (2D) materials placed in a quantizing magnetic field. Taking our cue from a recent experimental report, we consider a particular case of bismuthene monolayer with a strong spin-orbit interaction which can be a Weyl semimetal when placed on a specially tuned substrate. Interestingly, we observe that in some Landau levels of this material, the interaction effects are enhanced compared to those for a conventional 2D system and graphene monolayer. Such an enhancement of electron-electron interactions in these materials is largely due to an anisotropy present in the materials. Additionally, the interaction effects can be tuned by changing the coupling to the substrate and the strongest inter-electron interactions are observed when the system is a Weyl semimetal. Furthermore, the observed enhancement of the interaction effects can therefore be an important signature of the 2D Weyl fermions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Strong anisotropy and magnetostriction in the two-dimensional Stoner ferromagnet Fe 3 GeTe 2

Computationally characterizing magnetic properies of novel two-dimensional (2D) materials serves as an important first step of exploring possible applications. Using density-functional theory, we show that single-layer Fe 3 GeTe 2 is a potential 2D material with sufficiently low formation energy to be synthesized by mechanical exfoliation from the bulk phase with a van der Waals layered structure. In addition, we calculated the phonon dispersion demonstrating that single-layer Fe 3 GeTe 2 is dynamically stable. Furthermore, we find that similar to the bulk phase, 2D Fe 3 GeTe 2 exhibits amagnetic moment that originates from a Stoner instability. In contrast to other 2D materials, we find that single-layer Fe 3 GeTe 2 exhibits a significant uniaxial magnetocrystalline anisotropy energy of 920μ eV per Fe atom originating from spin-orbit coupling. In conclusion, we show that applying biaxial tensile strains enhances the anisotropy energy, which reveals strong magnetostriction in single-layer Fe 3 GeTe 2 with a sizable magneostrictive coefficient. Our results indicate that single-layer Fe 3 GeTe 2 is potentially useful for magnetic storage applications.

36 MATERIALS SCIENCE↗

Interplay between intercalated oxygen superstructures and monolayer h -BN on Cu(100)

The confinement effect of intercalated atoms in van der Waals heterostructures can lead to interesting interactions between the confined atoms or molecules and the overlaying two-dimensional (2D) materials. In this paper, we report the formation of ordered Cu(100) p(2×2) oxygen superstructures by oxygen intercalation under the monolayer hexagonal boron nitride (h-BN) on Cu after annealing. By using scanning tunneling microscopy and x-ray photoelectron spectroscopy, we identify the superstructure and reveal its roles in passivating the exposed Cu surfaces, decoupling h-BN and Cu, and disintegrating h-BN monolayers. The oxygen superstructure appears as a 2D pattern on the exposed Cu surface or quasi-1D stripes of paired oxygen intercalated in the interface of h-BN and Cu predominantly oriented along the moiré modulations. The oxygen superstructure is shown to etch the overlaying h-BN monolayer in a thermal annealing process. After extended annealing, the h-BN monolayer disintegrates into nanoislands with zigzag edges. Finally, we discuss the implications of these findings on the stability and oxidation resistance of h-BN and relate them to challenges in process integration and 2D heterostructures.

36 MATERIALS SCIENCE↗

Competition between Kondo effect and RKKY physics in graphene magnetism

The cooperative behavior of quantum impurities on two-dimensional (2D) materials, such as graphene and bilayer graphene, is characterized by a nontrivial competition between screening (Kondo effect) and Ruderman-Kittel-Kasuya-Yosida (RKKY) magnetism. In addition, due to the small density of states at the Fermi level, impurities may not couple to the conduction electrons at all, behaving as free moments. Employing a recently developed exact numerical method to study multi-impurity lattice systems, we obtain nonperturbative results that dramatically depart from expectations based on the conventional RKKY theory. At half filling and for weak coupling, impurities remain in the local moment regime when they are on opposite sublattices, up to a critical value of the interactions when they start coupling antiferromagnetically with correlations that decay very slowly with interimpurity distance. At finite doping, away from half filling, ferromagnetism is completely absent and the physics is dominated by a competition between antiferromagnetism and Kondo effect. In bilayer graphene, impurities on opposite layers behave as free moments, unless the interaction is of the order of the hopping or larger.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Two-dimensional ferroelectric topological insulators in functionalized atomically thin bismuth layers

We introduce a class of two-dimensional (2D) materials that possess coexisting ferroelectric and topologically insulating orders. Such ferroelectric topological insulators (FETIs) occur in noncentrosymmetric atomic layer structures with strong spin-orbit coupling (SOC). Here, we showcase a prototype 2D FETI in an atomically thin bismuth layer functionalized by CH 2 OH, which exhibits a large ferroelectric polarization that is switchable by a ligand molecule rotation mechanism and a strong SOC that drives a band inversion leading to the topologically insulating state. An external electric field that switches the ferroelectric polarization also tunes the spin texture in the underlying atomic lattice. Moreover, the functionalized bismuth layer exhibits an additional quantum order driven by the valley splitting at the K and K' points in the Brillouin zone stemming from the symmetry breaking and strong SOC in the system, resulting in a remarkable state of matter with the simultaneous presence of the quantum spin Hall and quantum valley Hall effect. These phenomena are predicted to exist in other similarly constructed 2D FETIs, thereby offering a unique quantum material platform for discovering novel physics and exploring innovative applications.

2-dimensional systems↗

Hall Effect Study of the kappa-(ET) 2 X Family: Evidence for Mott-Anderson Localization.

We investigate the dc resistivity and Hall effect of the quasi-two-dimensional organic materials κ-(ET) 2 X, where X = Ag 2 (CN) 3 and B(CN) 4 and compare them with the results for X = Cu-2(CN) 3 . All three compounds are considered to be quantum-spin-disordered Mott insulators. Despite high similarities in chemical composition and crystal structure, large differences in the dc resistivity and Hall coefficient are found. While around room temperature the dc transport properties are dominantly determined by the strength of the electron correlations, upon reducing the temperature, dc transport happens by hopping due to inherent disorder. The most disordered compound with X = Cu 2 (CN) 3 turns out to have the lowest dc resistivity and the highest charge carrier density, i.e., in the phase diagram it is located closest to the metal-insulator transition. The least disordered compound with X = B(CN) 4 shows the highest resistivity and the lowest carrier density, i.e., lies farthest from the metal-insulator transition. We explain such counterintuitive behavior within the theory of Mott-Anderson localization as a consequence of disorder-induced localized states within the correlation gap.

Culo, M.↗

Magnetic borophenes from an evolutionary search

A computational methodology based on ab initio evolutionary algorithms and spin-polarized density functional theory was developed to predict two-dimensional magnetic materials. Its application to a model system borophene reveals an unexpected rich magnetism and polymorphism. A metastable borophene with nonzero thickness is an antiferromagnetic semiconductor from first-principles calculations, and can be further tuned into a half-metal by finite electron doping. In this borophene, the buckling and coupling among three atomic layers are not only responsible for magnetism, but also result in an out-of-plane negative Poisson's ratio under uniaxial tension, making it the first elemental material possessing auxetic and magnetic properties simultaneously.

2-dimensional systems↗

Topological Phase Transitions in the Photonic Spin Hall Effect

The recent synthesis of two-dimensional staggered materials opens up burgeoning opportunities to study optical spin-orbit interactions in semiconducting Dirac-like systems. In this work, we unveil topological phase transitions in the photonic spin Hall effect in the graphene family materials. It is shown that an external static electric field and a high frequency circularly polarized laser allow for active on-demand manipulation of electromagnetic beam shifts. The spin Hall effect of light presents a rich dependence with radiation degrees of freedom, and material properties, and features nontrivial topological properties. Finally, we discover that photonic Hall shifts are sensitive to spin and valley properties of the charge carriers, providing an unprecedented pathway to investigate spintronics and valleytronics in staggered 2D semiconductors.

36 MATERIALS SCIENCE↗

Quantum Noise Spectroscopy of Dynamical Critical Phenomena

The transition between distinct phases of matter is characterized by the nature of fluctuations near the critical point. We demonstrate that noise spectroscopy can not only diagnose the presence of a phase transition, but can also determine fundamental properties of its criticality. In particular, by analyzing a scaling collapse of the decoherence profile, one can directly extract the critical exponents of the transition and identify its universality class. Our approach naturally captures the presence of conservation laws and distinguishes between classical and quantum phase transitions. In the context of quantum magnetism, our proposal complements existing techniques and provides a novel toolset optimized for interrogating two-dimensional magnetic materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

First-principles engineering of charged defects for two-dimensional quantum technologies

Charged defects in two-dimensional (2D) materials have emerging applications in quantum technologies such as quantum emitters and quantum computation. The advancement of these technologies requires a rational design of ideal defect centers, demanding reliable computation methods for the quantitatively accurate prediction of defect properties. Here, we present an accurate, parameter-free, and efficient procedure to evaluate the quasiparticle defect states and thermodynamic charge transition levels of defects in 2D materials. Importantly, we solve critical issues that stem from the strongly anisotropic screening in 2D materials, that have so far precluded the accurate prediction of charge transition levels in these materials. Using this procedure, we investigate various defects in monolayer hexagonal boron nitride (h-BN) for their charge transition levels, stable spin states, and optical excitations. We identify C B V N (nitrogen vacancy adjacent to carbon substitution of boron) to be the most promising defect candidate for scalable quantum bit and emitter applications.

2D materials↗

Dimensionally driven crossover from semimetal to direct semiconductor in layered SbAs

Two-dimensional (2D) materials have attracted a great deal of attention because they exhibit intriguing physical and chemical properties with great potential applications in electronic and optoelectronic devices, and even energy conversion. Due to the high anisotropy and unique crystal structure of layered materials, the properties can be effectively tuned by simply reducing dimensions to 2D. In this work, a unique 2D semiconductor, namely, monolayered SbAs, with high stability and indirect band gap, is predicted on the basis of first-principles calculations together with cluster expansion and Monte Carlo simulations. Interestingly, although the bulk antimony arsenide compound SbAs is known to exhibit semimetallic behavior, our calculations find that it is transformed into a direct semiconductor with a band gap of 1.28 eV when thinned down to a single atomic layer. The monolayer with antisite defects is transformed from indirect into a direct band-gap semiconductor. Such dramatic changes in the electronic structure could pave the way for SbAs to play a role in electronic device applications. Moreover, we find that the interlayer interactions in SbAs lead to a higher exfoliation energy than typical transition metal dichalcogenides such as MoS 2 , and hence we suggest that chemical deposition methods might be better than mechanical exfoliation methods for obtaining monolayer samples.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Growth and stability of Pb intercalated phases under graphene on SiC

Graphene intercalation is a novel way to control graphene's band structure and generate two-dimensional quantum materials with unusual spintronic and electronic properties. In spite of its importance, information about the intercalation mechanism is lacking, especially the role of low density domain boundaries between regions of graphene of different thickness. With high resolution surface diffraction we have systematically studied Pb intercalation on epi-graphene grown on SiC, with domain boundaries between buffer and single layer graphene. By examining the evolution of different diffraction spots as a function of tempertature, the location of Pb and stability of the intercalated phases underneath were determined.

36 MATERIALS SCIENCE↗

Monolayer 2D semiconducting tellurides for high-mobility electronics

Discovery and design of two-dimensional (2D) materials with suitable band gaps and high carrier mobility are of vital importance for the photonics, optoelectronics, and high-speed electronics. In this work, based on first principles calculations using density functional theory with Perdew-Burke-Ernzerhof and Heyd-Scuseria-Ernzerhoffunctionals, we introduce a family of monolayer isostructural semiconducting tellurides MNTe 4 , with M={Ti,Zr,Hf} and N={Si,Ge}. We find that these compounds have been identified to possess direct band gaps from 1.0 to 1.31 eV, which are well suited for photonics and optoelectronics applications. Additionally, anisotropic in-plane transport behavior is observed, and small electron and hole (0.11–0.15m e ) effective masses are identified along the dominant transport direction. Ultrahigh carrier mobility is predicted for this family of 2D compounds, which host great promise for potential applications in high-speed electronic devices. Furthermore, detailed analysis of electronic structures reveals the origins of the promising properties of this unique class of 2D telluride materials.

2-dimensional systems↗

Water dynamics in pristine and porous Ti 3 C 2 T x MXene as probed by quasielastic neutron scattering

MXenes are a novel class of two-dimensional (2D) materials whose applications in energy-storage systems have attracted substantial attention. Still, the rate performance of these materials is often diminished by sheet restacking, which is attenuated via controlled etching in H 2 SO 4 solution. With this process, micropores are formed in MXene sheets that allow transport across 2D layers. As a result, the intercalation and diffusivity of ions are facilitated resulting in improved capacitance retention at high charge-discharge rates. In the present work, we used quasielastic neutron scattering to evaluate the potential changes in water dynamics as a consequence of this mechanism by assessing the behavior of weakly and strongly confined water populations in pristine and porous MXenes. First, we have found that the porous sample accommodates a noticeably higher content of both water populations. Additionally, the fraction of mobile molecules is higher either under strong or weak confinement. Interestingly, regardless of the abundance of weakly confined water in the porous sample, no considerable changes in the dynamical behavior were detected in comparison with the dynamics measured in the pristine material. Finally, for the strongly confined populations of water, our results show that water is able to permeate the micropores introduced by etching and perform unlocalized motions.

36 MATERIALS SCIENCE↗

Out-of-plane polarization and topological magnetic vortices in multiferroic CrPSe 3

Two-dimensional multiferroic materials are ideal systems for exploring new coupling mechanisms between different ferroic orders and producing novel quantum phenomena with potential applications. Here we employ first-principles density functional theory calculations to discover intrinsic ferroelectric and antiferroelectric phases of Cr⁢P⁢Se 3 , which show ferromagnetic order and compete with the centrosymmetric phase with an antiferromagnetic order. Our analysis shows that the electrical dipoles of such type-I multiferroic phases come from the out-of-plane displacements of phosphorus ions due to the stereochemically active lone pairs. The coupling between polar and magnetic orders creates the opportunity for tuning the magnetic ground state by switching from the centrosymmetric to the ferroelectric phase using an out-of-plane electric field. In ferroelectric and antiferroelectric phases, the combination of easy-plane anisotropy and Dzyaloshinskii-Moriya interactions indicates that they can host topological magnetic vortices such as meron pairs.

36 MATERIALS SCIENCE↗