MgZnO-Based Negative Capacitance Transparent Thin-Film Transistor Built on Glass
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77 NANOSCIENCE AND NANOTECHNOLOGY↗
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Results for “ThIn”
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Studying the Recrystallization of Cu(InGa)Se 2 Semiconductor Thin Films by Silver Bromide In-situ Treatment
Cu(In,Ga)Se 2 samples were fabricated using a 3-stage thermal co-evaporation process on molybdenum back contact at low temperature. The process of recrystallization was carried out in between the 2 nd and 3 rd stages by flashing 25 mg of AgBr for 2 minutes. A change in morphological structure was observed as small grains transformed into large grains, as confirmed by XRD and SEM measurements. The decrease of the Ga gradient, seen in the SIMS depth profile, suggests Ga interdiffusion due to AgBr treatment. Altogether, the AgBr treatment contributes to a general improvement in device performance as compared to the as-deposited devices.
14 SOLAR ENERGY↗
Correlative nm-Scale Nonuniformity of Active Charge Carriers and Electrical Potential Along Both the Plane-View and Depth Directions in Group-V-Doped CdTe Thin Films: Preprint
We report nanometer-scale imaging on inhomogeneous distributions of active carrier and electrical potential in an As-doped CdTe film along both plane-view and film-depth directions. Despite Se grading, the SCM imaging does not show a clear variation of carrier concentration along the depth of the film. Instead, we observe carrier concentration variations of about 1 order of magnitude (high 1015 to low 1017/cm3) with inhomogeneous spatial regions ranging from a few hundred nm to a few ?m. This nonuniformity is distributed randomly in both the film lateral and vertical directions, independent of grain structure and GBs. We further mapped the surface potential using Kelvin probe force microscopy (KPFM). Higher potential was found on GBs, illustrating positive GB charging but not GB-specific carrier concentration. The results indicate that this suite of techniques can help identify nonuniform carrier concentration and potential fluctuations that can contribute to Voc deficits in GrV-doped CdTe devices.
CdTe thin film photovoltaics↗
Modified atomic layer deposition of MoS 2 thin films
As one of the most attractive transition metal dichalcogenides (TMDs), the growth of molybdenum disulfide (MoS 2 ) with industrial compatibility is of great importance. Atomic layer deposition (ALD) has been shown to be a promising method to achieve the growth of high-quality TMD materials. However, MoS 2 films deposited by ALD often are amorphous with nonideal stoichiometry and require high-temperature post-deposition annealing. Here, we introduce a modified ALD recipe using Mo(CO) 6 and H 2 S, resulting in controllable linear growth behavior, a S-to-Mo ratio of 2:1, and crystalline films at a temperature as low as 190 °C. The growth mechanisms and key factors leading to this improvement are proposed and complemented by kinetics calculations. This newly developed methodology relies on aligning the process time with the reaction kinetics of carbonyl disassociation. The MoS 2 films prepared herein were shown to be active hydrogen evolution reaction catalysts.
2D materials↗
Absolute measurement of vacuum ultraviolet photon flux in an inductively coupled plasma using a Au thin film
A new method for absolute measurement of the vacuum ultraviolet (VUV) photon flux at the edge of a plasma is described. The light produced by the plasma was allowed to strike a negatively biased, gold-coated copper substrate remote from the plasma. The resulting photoelectron emission current was measured, and the absolute photon flux was then found from the known photoelectron yield of Au. The method was used to quantify the amount of VUV light produced by an Ar/He inductively coupled plasma (ICP). Strong emissions at 104.82 and 106.67 nm, corresponding to the 1s 2 and 1s 4 resonant states of Ar, were observed. The maximum, integrated VUV photon flux measured at the remote location was 3.2 × 10 13 photons/cm 2 s. This was estimated to correspond to a flux of 5 × 10 15 photons/cm 2 s at the edge of the ICP, in the range of reported values under similar conditions.
70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
Desorption characteristics of selenium and tellurium thin films
The temperature-dependent desorption behavior of selenium and tellurium is investigated using a heated quartz crystal microbalance. Prior to heating the quartz crystal microbalance, selenium and tellurium films with varying thickness were deposited using thermal effusion cells in a molecular beam epitaxy system for subsequent determination of temperature-dependent mass loss of the deposited films. The desorption rate for tellurium was found to exhibit one sharp peak around 190°C, indicating the loss of the entire film irrespective of film thickness within a temperature window of 20°C, which was completely evaporated at 200°C. Similar experiments for selenium revealed that the thermal desorption took place via a two-stage process with a smaller portion of the material desorbing within an even narrower temperature window of 5°C at a much lower peak temperature of 65°C, while most selenium desorbed within a temperature range of 10°C around 90°C. This two-stage behavior indicated the presence of at least two chemically distinct selenium species or binding states. The direct and quantitative determination of the chalcogen desorption process provides important insights into the kinetics of chalcogenide-based film growth and is in addition of applied benefit to the research community in the area of Se/Te capping and decapping of air sensitive materials as it provides temperature ranges and rates at which full desorption is achieved. Our work furthermore points toward the need for a more detailed understanding of the chemical composition state of atomic and molecular beams supplied from thermal evaporation sources during growth.
36 MATERIALS SCIENCE↗
Diffusion-assisted molecular beam epitaxy of CuCrO 2 thin films
Using molecular beam epitaxy (MBE) to grow multielemental oxides (MEOs) is generally challenging, partly due to difficulty in stoichiometry control. Occasionally, if one of the elements is volatile at the growth temperature, stoichiometry control can be greatly simplified using adsorption-controlled growth mode. Otherwise, stoichiometry control remains one of the main hurdles to achieving high-quality MEO film growths. Here, in this paper, we report another kind of self-limited growth mode, dubbed diffusion-assisted epitaxy, in which excess species diffuses into the substrate and leads to the desired stoichiometry, in a manner similar to the conventional adsorption-controlled epitaxy. Specifically, we demonstrate that using diffusion-assisted epitaxy, high-quality epitaxial CuCrO 2 films can be grown over a wide growth window without precise flux control using MBE.
36 MATERIALS SCIENCE↗
Impact of high-power impulse magnetron sputtering pulse width on the nucleation, crystallization, microstructure, and ferroelectric properties of hafnium oxide thin films
The impact of the high-power impulse magnetron sputtering (HiPIMS) pulse width on the crystallization, microstructure, and ferroelectric properties of undoped HfO 2 films is investigated. HfO 2 films were sputtered from a hafnium metal target in an Ar/O 2 atmosphere, varying the instantaneous power density by changing the HiPIMS pulse width with fixed time-averaged power and pulse frequency. The pulse width is shown to affect the ion-to-neutral ratio in the depositing species with the shortest pulse durations leading to the highest ion fraction. In situ x-ray diffraction measurements during crystallization demonstrate that the HiPIMS pulse width impacts nucleation and phase formation, with an intermediate pulse width of 110 μ s stabilizing the ferroelectric phase over the widest temperature range. Although the pulse width impacts the grain size with the lowest pulse width resulting in the largest grain size, the grain size does not strongly correlate with the phase content or ferroelectric behavior in these films. In conclusion, these results suggest that precise control over the energetics of the depositing species may be beneficial for forming the ferroelectric phase in this material.
36 MATERIALS SCIENCE↗
Broadband, 920-nm mirror thin film damage competition
This year’s competition proposed to survey the state-of-the-art broadband, near-IR multilayer dielectric (MLD) mirrors designed for ultra-short, pulsed laser applications. The requirements for the coatings were a minimum reflection of 99.5% at 45-degree incidence angle for S-polarization from 830 nm to 1010 nm and group delay dispersion (GDD) < ± 50 fs 2 . The participants in this effort selected the coating materials, coating design, and deposition method. Samples were damage tested at a single testing facility to enable direct comparison among the participants using a 25 ± 5 fs OPCPA laser system operating at 5 Hz. A double blind test assured sample and submitter anonymity. The damage performance results, sample rankings, details of the deposition processes, coating materials and substrate cleaning methods are shared here. We found that multilayer coatings using tantala and/or hafnia as high index materials were top performers within several coating deposition groups. Specifically, dense coatings by ion-beam sputtering (IBS), magnetron sputtering (MS), and electron-beam ion assisted deposition (e-beam IAD) exhibited highest damage initiation onset (LIDT) while e-beam coatings were low performers. In addition, damage growth onset (LDGT) was also examined and the results are reported here for all samples as this performance metric plays an important role in establishing the safe operational conditions for larger aperture, ultrashort pulsed lasers. As a result, not all coating samples in the survey met the GDD requirements stated above and associated measurements are discussed in the context of the present and past competitions focused on similar broadband, near-IR MLD coatings.
42 ENGINEERING↗
A new era of ferroelectric thin films for nonvolatile memories
Ferroelectric films have potential applications in nonvolatile memory devices. In addition to the well-established perovskite-structure oxide ferroelectrics, hafnia- and wurtzite-based ferroelectrics have recently attracted considerable attention because of the improved scalability of the ferroelectric response (down to nanometer thicknesses), their compatibility with silicon fabrication processes, and the availability of deposition methods that realize three-dimensional structures. Furthermore, due to their high compatibility with silicon processes, these are also expected to be used in emerging energy-efficient applications, such as neuromorphic computing and reservoir computing. In this article, we review the fundamentals of hafnia- and wurtzite-based ferroelectrics and their advantages and issues for developing in nonvolatile memory devices. Then, possible emerging applications are discussed.
36 MATERIALS SCIENCE↗
Materials Data on ThIN by Materials Project
ThNI crystallizes in the tetragonal P4/nmm space group. The structure is two-dimensional and consists of one ThNI sheet oriented in the (0, 0, 1) direction. Th4+ is bonded in a 4-coordinate geometry to four equivalent N3- and four equivalent I1- atoms. All Th–N bond lengths are 2.35 Å. All Th–I bond lengths are 3.54 Å. N3- is bonded to four equivalent Th4+ atoms to form a mixture of corner and edge-sharing NTh4 tetrahedra. I1- is bonded in a 4-coordinate geometry to four equivalent Th4+ atoms.
36 MATERIALS SCIENCE↗
Delayed Critical Highly Enriched Uranium Metal Cylinders with Thin Graphite Top and Bottom Reflectors
Nine 7, 11, and 15 in. diam highly enriched uranium (HEU, 93.15 wt % 235 U) metal cylinders were assembled on the vertical assembly machine in the Oak Ridge Critical Experiments Facility (ORCEF) and had 1, 2, or 3 in. thick HLM graphite reflectors on the top and bottom. The experiments, which were performed between April 3, 1970, and February 18, 1971, used 23 operational days at ORCEF. Before those experiments were carried out, unreflected and unmoderated, graphite- and polyethylene-reflected, and polyethylene-moderated HEU metal cylinders had been assembled to obtain delayed criticality at ORCEF in the 1960s and reported by the International Criticality Safety Benchmark Evaluation Project (ICSBEP) at the Nuclear Energy Agency (NEA)*. The data from the nine critical experiments are acceptable for use as criticality safety benchmark experiments for the NEA’s ICSBEP once the uncertainty analysis is completed. Based on previous ICSBEP benchmarks with HEU metal at ORCEF, the uncertainties in k eff are expected to be as low as ±0.0004.
11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
Bridging the Gap Between Pure and Mixed-Gas Performance of Thin-Film Composite Membranes
This study examines the influence of cell design on mixed-gas testing with PolyActive™ TFC membranes, featuring pure-gas CO₂ permeance of 1700–3100 GPU, representative of state-of-the-art CO₂/N₂ separation membranes. By designing and 3D-printing a counter-current permeation cell with optimized flow efficiency, we achieved a 33–41% increase in mixed-gas CO₂ permeance compared to traditional cells. Additionally, a comparison of sweep-gas and vacuum permeation methods revealed that vacuum operation mitigates downstream polarization, enhancing mixed-gas CO₂ permeance by 41%. These results underscore the critical role of permeation cell design and testing methods in accurately evaluating membrane performance, with significant implications for scaling up TFC membranes and optimizing industrial processes.
3D printing↗
High throughput screening of ultra-thin electrocaloric materials enabled by additive manufacturing
Current HVAC systems can constitute as much as half of a building’s total energy consumption, depending on its use. More specifically cooling, particularly in hotter climates or for energy intensive applications, like data centers, can comprise between 10-30% of the total energy use. These cooling systems are largely comprised of compressor-based direct expansion systems and chilled water systems that use refrigerants or water, respectively, to reject heat. . Electrocaloric (EC) cycles present an eco-friendly alternative to these conventional processes.
36 MATERIALS SCIENCE↗
Structural, Optical and Mechanical Properties of Nanocrystalline Molybdenum Thin Films Deposited under Variable Substrate Temperature
Molybdenum (Mo), which is one among the refractory metals, is a promising material with a wide variety of technological applications in microelectronics, optoelectronics, and energy conversion and storage. However, understanding the structure–property correlation and optimization at the nanoscale dimension is quite important to meet the requirements of the emerging nanoelectronics and nanophotonics. In this context, we focused our efforts to derive a comprehensive understanding of the nanoscale structure, phase, and electronic properties of nanocrystalline Mo films with variable microstructure and grain size. Molybdenum films were deposited under varying temperature (25–500 °C), which resulted in Mo films with variable grain size of 9–22 nm. The grazing incidence X-ray diffraction analyses indicate the (110) preferred growth behavior the Mo films, though there is a marked decrease in hardness and elastic modulus values. In particular, there is a sizable difference in maximum and minimum elastic modulus values; the elastic modulus decreased from ~460 to 260–280 GPa with increasing substrate temperature from 25–500 °C. The plasticity index and wear resistance index values show a dramatic change with substrate temperature and grain size. Additionally, the optical properties of the nanocrystalline Mo films evaluated by spectroscopic ellipsometry indicate a marked dependence on the growth temperature and grain size. This dependence on grain size variation was particularly notable for the refractive index where Mo films with lower grain size fell in a range between ~2.75–3.75 across the measured wavelength as opposed to the range of 1.5–2.5 for samples deposited at temperatures of 400–500 °C, where the grain size is relatively higher. The conductive atomic force microscopy (AFM) studies indicate a direct correlation with grain size variation and grain versus grain boundary conduction; the trend noted was improved electrical conductivity of the Mo films in correlation with increasing grain size. The combined ellipsometry and conductive AFM studies allowed us to optimize the structure–property correlation in nanocrystalline Mo films for application in electronics and optoelectronics.
36 MATERIALS SCIENCE↗
Electrical Behavior of Combinatorial Thin-Film Zr x Ta 1−x O y
Combinatorial magnetron sputtering and electrical characterization were used to systematically study the impact of compositional changes in the resistive switching of transition metal oxides, specifically the Zr x Ta 1−x O y system. Current-voltage behavior across a range of temperatures provided insights into the mechanisms that contribute to differences in the electrical conductivity of the pristine Ta 2 O 5 and ZrO 2 , and mixed Zr x Ta 1−x O y devices. The underlying conductive mechanism was found to be a mixture of charge trapping and ionic motion, where charge trapping/emission dictated the short-term cycling behavior while ion motion contributed to changes in the conduction with increased cycling number. ToF-SIMS was used to identify the origin of the “wake-up” behavior of the devices, revealing an ionic motion contribution. This understanding of how cation concentration affects conduction in mixed valence systems helps provide a foundation for a new approach toward manipulating resistive switching in these active layer materials.
36 MATERIALS SCIENCE↗
Data for "High dopant activation in arsenic doped single-crystal CdTe thin films: Insights from MBE growth and rapid thermal processing"
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14 SOLAR ENERGY↗
Fiber Pumped Ho:Sesquioxide Ceramic Materials for Short Pulse Thin disk Lasers (Final Report)
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36 MATERIALS SCIENCE↗