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At least 1,333 records · Page 74

Waves generated in the plasma plume of helicon magnetic nozzle

Experimental measurements have shown that the plasma plume created in a helicon plasma device contains a conical structure in the plasma density and a U-shaped double layer (US-DL) tightly confined near the throat where plasma begins to expand from the source. Recently reported two-dimensional particle-in-cell simulations verified these density and US-DL features of the plasma plume. Simulations also showed that the plasma in the plume develops non-thermal feature consisting of radial ion beams with large densities near the conical surface of the density structure. The plasma waves that are generated by the radial ion beams affecting the structure of the plasma plume are studied here. We find that most intense waves persist in the high-density regions of the conical density structure, where the transversely accelerated ions in the radial electric fields in the plume are reflected setting up counter-streaming. The waves generated are primarily ion Bernstein modes. The nonlinear evolution of the waves leads to magnetic field-aligned striations in the fields and the plasma near the conical surface of the density structure.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Observation of Wakefield Suppression in a Photonic-Band-Gap Accelerator Structure

We report experimental observation of higher order mode (HOM) wakefield suppression in a room-temperature traveling-wave photonic band gap (PBG) accelerating structure at 11.700 GHz. It has been long recognized that PBG structures have potential for reducing long-range wakefields in accelerators. The first ever demonstration of acceleration in a room-temperature PBG structure was conducted in 2005. Since then, the importance of PBG accelerator research has been recognized by many institutions. However, the full experimental characterization of the wakefield spectrum and demonstration of wakefield suppression when the accelerating structure is excited by an electron beam has not been performed to date. We conducted an experiment at the Argonne Wakefield Accelerator (AWA) test facility and observed wakefields excited by a single high charge electron bunch when it passes through a PBG accelerator structure. Lastly, excellent HOM suppression properties of the PBG accelerator were demonstrated in the beam test.

43 PARTICLE ACCELERATORS↗

Nanoscale probing of electron-regulated structural transitions in silk proteins by near-field IR imaging and nano-spectroscopy

Silk protein fibres produced by silkworms and spiders are renowned for their unparalleled mechanical strength and extensibility arising from their high-β-sheet crystal contents as natural materials. Investigation of β-sheet-oriented conformational transitions in silk proteins at the nanoscale remains a challenge using conventional imaging techniques given their limitations in chemical sensitivity or limited spatial resolution. Here, we report on electron-regulated nanoscale polymorphic transitions in silk proteins revealed by near-field infrared imaging and nano-spectroscopy at resolutions approaching the molecular level. The ability to locally probe nanoscale protein structural transitions combined with nanometre-precision electron-beam lithography offers us the capability to finely control the structure of silk proteins in two and three dimensions. Our work paves the way for unlocking essential nanoscopic protein structures and critical conditions for electron-induced conformational transitions, offering new rules to design protein-based nanoarchitectures.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Diffraction imaging of nanocrystalline structures in organic semiconductor molecular thin films

The properties of organic solids depend on their structure and morphology, yet direct imaging using conventional electron microscopy methods is hampered by the complex internal structure of these materials and their sensitivity to electron beams. In this work, we manage to observe the nanocrystalline structure of two organic molecular thin-film systems using transmission electron microscopy by employing a scanning nanodiffraction method that allows for full access to reciprocal space over the size of a spatially localized probe (~2 nm). The morphologies revealed by this technique vary from grains with pronounced segmentation of the structure—characterized by sharp grain boundaries and overlapping domains—to liquid-crystal structures with crystalline orientations varying smoothly over all possible rotations that contain disclinations representing singularities in the director field. Lastly, the results show how structure–property relationships can be visualized in organic systems using techniques previously only available for hard materials such as metals and ceramics.

36 MATERIALS SCIENCE↗

Heteroepitaxial ZnO films on diamond: Optoelectronic properties and the role of interface polarity

We demonstrate the growth of heteroepitaxial ZnO films on (110) diamond substrates by molecular beam epitaxy and report on a major advance in structural quality, as confirmed by XRD and high-resolution TEM measurements. The growth direction is found to be along the polar c-axis with Zn-polarity, deduced from annular bright-field scanning transmission electron microscopy imaging. This is important information, as simulations of the electronic band structure reveal the ZnO polarity to dominate the electronic structure of the interface: the formation of a two-dimensional electron gas on the ZnO side or a two-dimensional hole gas on the diamond side are predicted for Zn- and O-polarity, respectively. In addition, photoluminescence and absorption studies exhibit good optical properties and reveal stimulated emission for optical excitation above a threshold of 30 kW/cm{sup 2}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

The application of the mesh-free method in the numerical simulations of the higher-order continuum structures

This paper attempts to study the application of mesh-free method in the numerical simulations of the higher-order continuum structures. A high-order bending beam considers the effect of the third-order derivative of deflections, and can be viewed as a one-dimensional higher-order continuum structure. The moving least-squares method is used to construct the shape function with the high-order continuum property, the curvature and the third-order derivative of deflections are directly interpolated with nodal variables and the second- and third-order derivative of the shape function, and the mesh-free computational scheme is establish for beams. The coupled stress theory is introduced to describe the special constitutive response of the layered rock mass in which the bending effect of thin layer is considered. The strain and the curvature are directly interpolated with the nodal variables, and the mesh-free method is established for the layered rock mass. The good computational efficiency is achieved based on the developed mesh-free method, and some key issues are discussed.

97 MATHEMATICS AND COMPUTING↗

High Electron Mobility SiGe/Si Transistor Structures on Sapphire Substrates

SiGe/Si n-type modulation doped field effect structures and transistors (n-MODFETs) have been fabricated on r-plane sapphire substrates. The structures were deposited using molecular beam epitaxy, and antimony dopants were incorporated via a delta doping process. Secondary ion mass spectroscopy (SIMS) indicates that the peak antimony concentration was approximately 4 x 10(exp 19) per cubic centimeter. At these two temperatures, the electron carrier densities were 1.6 and 1.33 x 10(exp 12) per square centimeter, thus demonstrating that carrier confinement was excellent. Shubnikov-de Haas oscillations were observed at 0.25 K, thus confirming the two-dimensional nature of the carriers. Transistors, with gate lengths varying from 1 micron to 5 microns, were fabricated using these structures and dc characterization was performed at room temperature. The saturated drain current region extended over a wide source-to-drain voltage (V (sub DS)) range, with V (sub DS) knee voltages of approximately 0.5 V and increased leakage starting at voltages slightly higher than 4 V.

Alterovitz, Samuel A.↗

Electron Beam Freeform Fabrication in the Space Environment

The influence of reduced gravitational forces (in space and on the lunar or Martian surfaces) on manufacturing processes must be understood for effective fabrication and repair of structures and replacement parts during long duration space missions. The electron beam freeform fabrication (EBF3) process uses an electron beam and wire to fabricate metallic structures. The process efficiencies of the electron beam and the solid wire feedstock make the EBF3 process attractive for use in-space. This paper will describe the suitability of the EBF3 process in the space environment and will highlight preliminary testing of the EBF3 process in a zero-gravity environment.

Hafley, Robert A.↗

Scaling effects in the impact response of graphite-epoxy composite beams

In support of crashworthiness studies on composite airframes and substructure, an experimental and analytical study was conducted to characterize size effects in the large deflection response of scale model graphite-epoxy beams subjected to impact. Scale model beams of 1/2, 2/3, 3/4, 5/6, and full scale were constructed of four different laminate stacking sequences including unidirectional, angle ply, cross ply, and quasi-isotropic. The beam specimens were subjected to eccentric axial impact loads which were scaled to provide homologous beam responses. Comparisons of the load and strain time histories between the scale model beams and the prototype should verify the scale law and demonstrate the use of scale model testing for determining impact behavior of composite structures. The nonlinear structural analysis finite element program DYCAST (DYnamic Crash Analysis of STructures) was used to model the beam response. DYCAST analysis predictions of beam strain response are compared to experimental data and the results are presented.

Jackson, Karen E.↗

Optics Studies for Multipass Energy Recovery at CEBAF: ER@CEBAF

Energy recovery linacs (ERLs), focus on recycling the kinetic energy of electron beam for the purpose of accelerating a newly injected beam within the same accelerating structure. The rising developments in the super conducting radio frequency technology, ERL technology has achieved several noteworthy milestones over the past few decades. In year 2003, Jefferson Lab has successfully demonstrated a single pass energy recovery at the CEBAF accelerator. Furthermore, they conducted successful experiments with IR-FEL demo and upgrades, as well as the UV FEL driver. This multi-pass, multi-GeV range energy recovery demonstration proposed to be carried out at CEBAF accelerator at Jefferson Lab focuses on demonstrating highest energy recovery in super conducting linac in the low-current range. Continuous electron beam accelerate up to 7.5 GeV within 5-passes and decelerate in the next 5-passes recovering RF energy and dumps at a low energy dump. The beamline optics design for recirculating linacs require special attention to avoid beam instabilities due to RF wakefields. Usually, multi-pass linac beam lines require stronger focusing at lower energies as that is necessary to avoid beam breakup (BBU) instabilities, even with this small beam current. The CEBAF linac optics optimization is focused on balancing over-focusing at higher energies and beta excursions at lower energies. The race-track-shaped geometry of CEBAF accelerator allows its linacs to accommodate multiple energy beams simultaneously, while individual recirculating arcs transporting one beam energy, are shared between accelerating/decelerating beams. For the linac optics optimization process, an extended strategy is used that is originally used in 6-pass Recirculating Linac design of the LHeC, to represent the ten passes through a single linac. Using proper mathematical expressions, linac optics optimization can be achieved with evolutionary genetic algorithms, with Multi-Objective optimization. This thesis introduces a CEBAF optics redesign tailored to accommodates the ER@CEBAF multi-pass ER scheme. The isochronous arcs were retuned to match into optics solutions for optimized 10-pass linacs. Within this work, a single bunch particle tracking analysis presented here focuses on the further improvements of the beamline and beam transportation.

Neththikumara, Isurumali↗

Bending of beams of thin sections

The tendency toward economy of material and lightness of structure has long since led to the increased application of beams having large ratios of moment of area W to cross-sectional area F. This paper tries to provide an answer to how thin the beams can be.

Huber, Maximilian T↗

The truss-beam and space technology

A method is presented herein to determine the dynamic characteristics of truss-beam systems for both planar and space structures. Results from this approach are compared with those of the finite element method and test results. The truss-beam model is based on the assumptions of negligible web contribution, i.e., very large flexible structures. Future experimental evaluation of the plane truss-system is planned at North Carolina Agricultural and Technical State University and this experimental program is described.

Abu-Saba, Elias G.↗

High Electron Mobility SiGe/Si Transistor Structures on Sapphire Substrates

SiGe/Si n-type modulation doped field effect structures and transistors (n-MODFETs) have been fabricated on r-plane sapphire substrates. The structures were deposited using molecular beam epitaxy, and antimony dopants were incorporated via a delta doping process. Secondary ion mass spectroscopy (SIMS) indicates that the peak antimony, concentration was approximately 4 x 10(exp19) per cubic cm. The electron mobility was over 1,200 and 13,000 sq cm/V-sec at room temperature and 0.25 K, respectively. At these two temperatures, the electron carrier densities were 1.6 and 1.33 x 10(exp 12) per sq cm, thus demonstrating that carrier confinement was excellent. Shubnikov-de Haas oscillations were observed at 0.25 K, thus confirming the two-dimensional nature of the carriers. Transistors, with gate lengths varying from 1 micron to 5 microns, were fabricated using these structures and dc characterization was performed at room temperature. The saturated drain current region extended over a wide source-to-drain voltage (V(sub DS)) range, with (V(sub DS)) knee voltages of approximately 0.5 V and increased leakage starting at voltages slightly higher than 4 V.

Alterovitz, Samuel A.↗

A nuclear physics program at the Rare Isotope Beams Accelerator Facility in Korea

This paper outlines the new physics possibilities that fall within the field of nuclear structure and astrophysics based on experiments with radioactive ion beams at the future Rare Isotope Beams Accelerator facility in Korea. This ambitious multi-beam facility has both an Isotope Separation On Line (ISOL) and fragmentation capability to produce rare isotopes beams (RIBs) and will be capable of producing and accelerating beams of wide range mass of nuclides with energies of a few to hundreds MeV per nucleon. The large dynamic range of reaccelerated RIBs will allow the optimization in each nuclear reaction case with respect to cross section and channel opening. The low energy RIBs around Coulomb barrier offer nuclear reactions such as elastic resonance scatterings, one or two particle transfers, Coulomb multiple-excitations, fusion-evaporations, and direct capture reactions for the study of the very neutron-rich and proton-rich nuclides. In contrast, the high energy RIBs produced by in-flight fragmentation with reaccelerated ions from the ISOL enable to explore the study of neutron drip lines in intermediate mass regions. The proposed studies aim at investigating the exotic nuclei near and beyond the nucleon drip lines, and to explore how nuclear many-body systems change in such extreme regions by addressing the following topics: the evolution of shell structure in areas of extreme proton to neutron imbalance; the study of the weak interaction in exotic decay schemes such as beta-delayed two-neutron or two-proton emission; the change of isospin symmetry in isobaric mirror nuclei at the drip lines; two protons or two neutrons radioactivity beyond the drip lines; the role of the continuum states including resonant states above the particle-decay threshold in exotic nuclei; and the effects of nuclear reaction rates triggered by the unbound proton-rich nuclei on nuclear astrophysical processes.

43 PARTICLE ACCELERATORS↗

Study of structural properties of cubic InN films on GaAs(001) substrates by molecular beam epitaxy and migration enhanced epitaxy

InN epitaxial films with cubic phase were grown by rf-plasma-assisted molecular beam epitaxy (RF-MBE) on GaAs(001) substrates employing two methods: migration-enhanced epitaxy (MEE) and conventional MBE technique. The films were synthesized at different growth temperatures ranging from 490 to 550 Degree-Sign C, and different In beam fluxes (BEP{sub In}) ranging from 5.9 Multiplication-Sign 10{sup -7} to 9.7 Multiplication-Sign 10{sup -7} Torr. We found the optimum conditions for the nucleation of the cubic phase of the InN using a buffer composed of several thin layers, according to reflection high-energy electron diffraction (RHEED) patterns. Crystallographic analysis by high resolution X-ray diffraction (HR-XRD) and RHEED confirmed the growth of c-InN by the two methods. We achieved with the MEE method a higher crystal quality and higher cubic phase purity. The ratio of cubic to hexagonal components in InN films was estimated from the ratio of the integrated X-ray diffraction intensities of the cubic (002) and hexagonal (1011) planes measured by X-ray reciprocal space mapping (RSM). For MEE samples, the cubic phase of InN increases employing higher In beam fluxes and higher growth temperatures. We have obtained a cubic purity phase of 96.4% for a film grown at 510 Degree-Sign C by MEE.

36 MATERIALS SCIENCE↗

Structure and composition of zirconium carbide thin-film grown by ion beam sputtering for optical applications

Thin film of compound material ZrC was deposited on Si (100) wafer using ion beam sputtering method. The deposition was carried out at room temperature and at base pressure of 3×10{sup −5} Pa. X-ray photoelectron spectroscopy (XPS) measurements were performed for determining the surface chemical compositions. Grazing incidence x-ray reflectivity (GIXRR) measurements were performed to study the film thickness, roughness and density. From GIXRR curve roughness value of the film was found less than 1 nm indicating smooth surface morphology. Films density was found 6.51 g/cm{sup 3}, which is close to bulk density. Atomic force microscopy (AFM) measurements were performed to check the surface morphology. AFM investigation showed that the film surface is smooth, which corroborate the GIXRR data. Figure 2 of the original article PDF file, as supplied to AIP Publishing, contained a PDF processing error. This article was updated on 12 May 2014 to correct that error.

36 MATERIALS SCIENCE↗

Ion beam irradiation of ABO4 compounds with the fergusonite, monazite, scheelite, and zircon structures

The effects of irradiation on CaWO4, SrWO4, BaWO4, YVO4, LaVO4, YNbO4, and LaNbO4 were investigated on thin crystals using 1.0 MeV Kr ions at 50-1000 K. All of the ABO4 compounds can be amorphized with calculated damage cross sections (σa = 1/Fc0) in the range of ~0.30-1.09 × 10-14 cm2 ion-1 at zero Kelvin. The analysis of fluence-temperature data returned critical temperatures for amorphization (Tc) of 311 ± 1, 358 ± 90, 325 ± 19, 415 ± 17, 541 ± 6, 636 ± 26, and 1012 ± 1 K, respectively, for the compounds listed above. Compared with previous in situ irradiation of ABO4 orthophosphate samples using 0.8 MeV Kr ions, the Tc values of LaVO4 and YVO4 are higher than those of LaPO4 and YPO4 by 82 K and 124 K, respectively. The Tc values of the three scheelite structures, CaWO4, SrWO4, and BaWO4, indicate that they are the most radiation tolerant compounds under these conditions. The A-B cation anti-site energies, EfAB, determined by DFT range from 2.48 to 10.58 eV and are highly correlated with the A-B cation ionic radius ratio, rA/rB, but are not correlated with Tc across the different structure types, suggesting that the formation and migration energies of Frenkel defects play a more important role in damage recovery in these compounds. We also discuss the role of cation and anion charge/iconicity as determined by DFT. ABO4 compounds with the zircon structure and B = P or V have a distinct advantage over those with B = Si as the damaged regions do not appear to be significantly affected by polymerization of (PO4) 3- or (VO4) 3- groups which might stabilize the amorphous fraction and ultimately lead to phase separation as observed in zircon (ZrSiO4).

amorphization↗

Laser and optical transport line for laser-based ion beam diagnostics and control in the SNS linear accelerator

We report our recent upgrade of the laser and optical transport line for the laser-based ion beam diagnostics (laser wire) system at the linear accelerator (linac) of the Spallation Neutron Source (SNS). A new light source based on diodepumped solid-state laser amplifiers has been developed to provide near diffraction-limited laser beam with a variety of pulse structures. The free-space optical transport line has been modified to include image relay optics with remote control, which greatly improved the laser beam quality and position stability at individual measurement stations. The upgraded system enables novel beam diagnostics/control capabilities including longitudinal profile measurement and high-energy proton beam extraction from the SNS linac.

Liu, Yun↗