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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,333 records · Page 74
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Further reduction of efficiency droop effect by adding a lower-index dielectric interlayer in a surface plasmon coupled blue light-emitting diode with surface metal nanoparticles

Further reduction of the efficiency droop effect and further enhancements of internal quantum efficiency (IQE) and output intensity of a surface plasmon coupled, blue-emitting light-emitting diode (LED) by inserting a dielectric interlayer (DI) of a lower refractive index between p-GaN and surface Ag nanoparticles are demonstrated. The insertion of a DI leads to a blue shift of the localized surface plasmon (LSP) resonance spectrum and increases the LSP coupling strength at the quantum well emitting wavelength in the blue range. With SiO{sub 2} as the DI, a thinner DI leads to a stronger LSP coupling effect, when compared with the case of a thicker DI. By using GaZnO, which is a dielectric in the optical range and a good conductor under direct-current operation, as the DI, the LSP coupling results in the highest IQE, highest LED output intensity, and weakest droop effect.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Field-assisted patterned dissolution of silver nanoparticles in phosphate glass

Phosphate glass samples doped with silver ions through a Na⁺-Ag⁺ ion-exchange process were treated in a hydrogen atmosphere at temperatures near 430°C for durations ranging from 4 to 5 h. Such treatment causes metallic silver precipitation at the surface as well as nanoclustering of silver atoms under the surface under conditions very similar to those used for silicate glasses. The presence of silver clusters resulted in a characteristic coloring of the glass and was verified by the observation of a plasmon resonance peak near 410–420 nm in the absorption spectra. Applying a DC voltage between 1.4 and 2 kV at temperatures between 120 and 130°C led to dissolution of the clusters in the area under the positive electrode, thereby bleaching the glass color. The use of a patterned doped-silicon electrode further led to the formation of a 300 nm thick surface relief on the glass surface and of a volume complex permittivity grating extending at least 4 μm under the surface. Such volume complex refractive index gratings may find applications in passive or active (laser) photonic devices in rare-earth doped phosphate glasses, where conventional bulk grating formation techniques have limited applicability.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Virtually pure near-infrared electroluminescence from exciplexes at polyfluorene/hexaazatrinaphthylene interfaces

Electronic processes at the heterojunction between chemically different organic semiconductors are of special significance for devices such as light-emitting diodes (LEDs) and photovoltaic diodes. Here, we report the formation of an exciplex state at the heterojunction of an electron-transporting material, a functionalized hexaazatrinaphthylene, and a hole-transporting material, poly(9,9-dioctylfluorene-alt-N-(4-butylphenyl)diphenylamine) (TFB). The energetics of the exciplex state leads to a spectral shift of ∼1 eV between the exciton and the exciplex peak energies (at 2.58 eV and 1.58 eV, respectively). LEDs incorporating such bulk heterojunctions display complete quenching of the exciton luminescence, and a nearly pure near-infrared electroluminescence arising from the exciplex (at ∼1.52 eV) with >98% of the emission at wavelengths above 700 nm at any operational voltage.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

A hole accelerator for InGaN/GaN light-emitting diodes

The quantum efficiency of InGaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, and this is caused by the inefficient p-type doping and the low hole mobility. The low hole mobility makes the holes less energetic, which hinders the hole injection into the multiple quantum wells (MQWs) especially when a p-type AlGaN electron blocking layer (EBL) is adopted. In this work, we report a hole accelerator to accelerate the holes so that the holes can obtain adequate kinetic energy, travel across the p-type EBL, and then enter the MQWs more efficiently and smoothly. In addition to the numerical study, the effectiveness of the hole accelerator is experimentally shown through achieving improved optical output power and reduced efficiency droop for the proposed InGaN/GaN LED.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Radioluminescence characterization of in situ x-ray nanodosimeters: Potential real-time monitors and modulators of external beam radiation therapy

Europium-doped yttrium oxide (Y{sub 2}O{sub 3}:Eu) has garnered considerable interest recently for its use as a highly efficient, red phosphor in a variety of lighting applications that include fluorescent lamps, plasma, and field emission display panels, light emitting diodes (LEDs), and lasers. In the present work, we describe the development of Y{sub 2}O{sub 3}:Eu nanoparticles for a very different application: in situ, in vivo x-ray dosimetry. Spectroscopic analyses of these nanoparticles during x-ray irradiation reveal surprisingly bright and stable radioluminescence at near-infrared wavelengths, with markedly linear response to changes in x-ray flux and energy. Monte Carlo modeling of incident flux and broadband, wide-field imaging of mouse phantoms bearing both Y{sub 2}O{sub 3}:Eu nanoparticles and calibrated LEDs of similar spectral emission demonstrated significant transmission of radioluminescence, in agreement with spectroscopic studies; with approximately 15 visible photons being generated for every x-ray photon incident. Unlike the dosimeters currently employed in clinical practice, these nanodosimeters can sample both dose and dose rate rapidly enough as to provide real-time feedback for x-ray based external beam radiotherapy (EBRT). The technique's use of remote sensing and absence of supporting structures enable perturbation-free dosing of the targeted region and complete sampling from any direction. With the conjugation of pathology-targeting ligands onto their surfaces, these nanodosimeters offer a potential paradigm shift in the real-time monitoring and modulation of delivered dose in the EBRT of cancer in situ.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Enhancing optical power of GaN-based light-emitting diodes by nanopatterning on indium tin oxide with tunable fill factor using multiple-exposure nanosphere-lens lithography

In this study, the multiple-exposure nanosphere-lens lithography method utilizing the polystyrene nanospheres with focusing behavior is investigated and introduced to fabricate diverse photonic crystals (PCs) on indium tin oxide to enhance the optical output power of GaN-based light-emitting diode (LED). Simulated results indicate that the focused light intensity decreases with increasing tilted angle due to the shadow effect introduced by adjacent nanospheres. The fill factor of nanopattern is tunable by controlling tilted angles and exposure times. To attain quadruple PC without overlapping patterns, mathematical calculation model is used to define the optimum range of tilted angles. Angular emission patterns and three-dimensional finite-difference time domain simulated results indicate that the enhanced light extraction of PC LEDs results mainly from diffused scattering effects, and the diffraction effects of PC on light extracted efficiency increase with the increase of fill factor. Furthermore, it is confirmed that the multiple PC can extract more light from GaN into air than common PC with same period and fill factor.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Influence of carrier overflow on the forward-voltage characteristics of InGaN-based light-emitting diodes

We investigate the influence of carrier overflow on the forward-voltage characteristics of the InGaN-based blue light-emitting-diode (LED) by comparing the temperature-dependent characteristics of the electroluminescence (EL) efficiency, the EL spectra, and the current-voltage relation over a wide range of temperature (50–300 K). Based on these experimental results, we demonstrate that the simple ohmic potential drop in the Shockley diode equation is not sufficient to explain the experimental data when the severe carrier overflow to the p-(Al)GaN layer induces the efficiency droop in the LED device. The anomalous relation between current and voltage at cryogenic temperatures is explained by the space-charge-limited current formed by the overflown electrons, rather than by the increase of a constant series resistance in the p-(Al)GaN layer.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Enhanced emission from mid-infrared AlInSb light-emitting diodes with p-type contact grid geometry

We report on the impact of lateral current spreading on light emission from aluminium indium antimonide (AlInSb) mid-infrared p-i-n light-emitting diodes (LEDs) grown by molecular beam epitaxy on a GaAs substrate. Due to the high effective mass of holes in Al{sub x}In{sub 1−x}Sb, the resistivity of p-type material determines the 3-D distribution of current flow in the devices. This work shows that maximum light emission, as measured by electroluminescence, and 3-times wall-plug efficiency improvement were obtained at room temperature from devices with a p-type contact grid geometry with a spacing of twice the current spreading length in the p-type material, which was measured by spatially resolved photocurrent. The LED with the optimal contact geometry exhibits improved performance at high injection current levels thanks to the more uniform carrier distribution across the device area.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Titanium-dioxide nanotube p-n homojunction diode

Application of semiconductors in functional optoelectronic devices requires precise control over their doping and formation of junction between p- and n-doped semiconductors. While doped thin films have led to several semiconductor devices, need for high-surface area nanostructured devices for photovoltaic, photoelectrochemical, and photocatalytic applications has been hindered by lack of desired doping in nanostructures. Here, we show titanium-dioxide (TiO{sub 2}) nanotubes doped with nitrogen (N) and niobium (Nb) as acceptors and donors, respectively, and formation of TiO{sub 2} nanotubes p-n homojunction. This TiO{sub 2}:N/TiO{sub 2}:Nb homojunction showed distinct diode-like behaviour with rectification ratio of 1115 at ±5 V and exhibited good photoresponse for ultraviolet light (λ = 365 nm) with sensitivity of 0.19 A/W at reverse bias of −5 V. These results can have important implications for development of nanostructured metal-oxide solar-cells, photodiodes, LED's, photocatalysts, and photoelectrochemical devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Luminescent properties of Eu{sup 2+}-doped BaGdF{sub 5} glass ceramics a potential blue phosphor for ultra-violet light-emitting diode

Eu{sup 2+} doped transparent oxyfluoride glass ceramics containing BaGdF{sub 5} nanocrystals were successfully fabricated by melt-quenching technique under a reductive atmosphere. The structure of the glass and glass ceramics were investigated by differential scanning calorimetry, X-ray diffraction (XRD), and transmission electron microscopy (TEM). The luminescent properties were investigated by transmission, excitation, and emission spectra. The decay time of the Gd{sup 3+} ions at 312 nm excited with 275 nm were also investigated. The results of XRD and TEM indicated the existence of BaGdF5 nanocrystals in the transparent glass ceramics. The excitation spectra of Eu{sup 2+} doped glass ceramics showed an excellent overlap with the main emission region of an ultraviolet light-emitting diode (UV-LED). Compared with the as-made glass, the emission of glass ceramics is much stronger by a factor of increasing energy transfer efficiency from Gd{sup 3+} to Eu{sup 2+} ions, the energy transfer efficiency from Gd{sup 3+} to Eu{sup 2+} ions was discussed. In addition, the chromaticity coordinates of glass and glass ceramics specimens were also discussed, which indicated that the Eu{sup 2+} doped BaGdF{sub 5} glass ceramics may be used as a potential blue-emitting phosphor for UV-LED.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Tunability of the circadian action of tetrachromatic solid-state light sources

An approach to the optimization of the spectral power distribution of solid-state light sources with the tunable non-image forming photobiological effect on the human circadian rhythm is proposed. For tetrachromatic clusters of model narrow-band (direct-emission) light-emitting diodes (LEDs), the limiting tunability of the circadian action factor (CAF), which is the ratio of the circadian efficacy to luminous efficacy of radiation, was established as a function of constraining color fidelity and luminous efficacy of radiation. For constant correlated color temperatures (CCTs), the CAF of the LED clusters can be tuned above and below that of the corresponding blackbody radiators, whereas for variable CCT, the clusters can have circadian tunability covering that of a temperature-tunable blackbody radiator.

43 PARTICLE ACCELERATORS↗
DOE OSTI2015

High efficiency single Ag nanowire/p-GaN substrate Schottky junction-based ultraviolet light emitting diodes

We report a high efficiency single Ag nanowire (NW)/p-GaN substrate Schottky junction-based ultraviolet light emitting diode (UV-LED). The device demonstrates deep UV free exciton electroluminescence at 362.5 nm. The dominant emission, detectable at ultralow (<1 μA) forward current, does not exhibit any shifts when the forward current is increased. External quantum efficiency (EQE) as high as 0.9% is achieved at 25 μA current at room temperature. Experiments and simulation analysis show that devices fabricated with thinner Ag NWs have higher EQE. However, for very thin Ag NWs (diameter < 250 nm), this trend breaks down due to heat accumulation in the NWs. Our simple device architecture offers a potentially cost-effective scheme to fabricate high efficiency Schottky junction-based UV-LEDs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

A hole modulator for InGaN/GaN light-emitting diodes

The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ∼332 meV to ∼294 meV at 80 A/cm{sup 2} and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Origins of low energy-transfer efficiency between patterned GaN quantum well and CdSe quantum dots

For hybrid light emitting devices (LEDs) consisting of GaN quantum wells and colloidal quantum dots, it is necessary to explore the physical mechanisms causing decreases in the quantum efficiencies and the energy transfer efficiency between a GaN quantum well and CdSe quantum dots. This study investigated the electro-luminescence for a hybrid LED consisting of colloidal quantum dots and a GaN quantum well patterned with photonic crystals. It was found that both the quantum efficiency of colloidal quantum dots on a GaN quantum well and the energy transfer efficiency between the patterned GaN quantum well and the colloidal quantum dots decreased with increases in the driving voltage or the driving time. Under high driving voltages, the decreases in the quantum efficiency of the colloidal quantum dots and the energy transfer efficiency can be attributed to Auger recombination, while those decreases under long driving time are due to photo-bleaching and Auger recombination.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode

In this work, by using an on-chip integrated Schottky-on-heterojunction light-emitting diode (SoH-LED) which is seamlessly integrated with the AlGaN/GaN high electron mobility transistor (HEMT), we studied the effect of on-chip light illumination on the de-trapping processes of electrons from both surface and bulk traps. Surface trapping was generated by applying OFF-state drain bias stress, while bulk trapping was generated by applying positive substrate bias stress. The de-trapping processes of surface and/or bulk traps were monitored by measuring the recovery of dynamic on-resistance R{sub on} and/or threshold voltage V{sub th} of the HEMT. The results show that the recovery processes of both dynamic R{sub on} and threshold voltage V{sub th} of the HEMT can be accelerated by the on-chip SoH-LED light illumination, demonstrating the potentiality of on-chip hybrid opto-HEMTs to minimize the influences of traps during dynamic operation of AlGaN/GaN power HEMTs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Light extraction enhancement of 265 nm deep-ultraviolet light-emitting diodes with over 90 mW output power via an AlN hybrid nanostructure

Deep-ultraviolet (DUV) aluminum gallium nitride-based light-emitting diodes (LEDs) on transparent aluminum nitride (AlN) substrates with high light extraction efficiency and high power are proposed and demonstrated. The AlN bottom side surface configuration, which is composed of a hybrid structure of photonic crystals and subwavelength nanostructures, has been designed using finite-difference time-domain calculations to enhance light extraction. We have experimentally demonstrated an output power improvement of up to 196% as a result of the use of the embedded high-light-extraction hybrid nanophotonic structure. The DUV-LEDs produced have demonstrated output power as high as 90 mW in DC operation at a peak emission wavelength of 265 nm.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Acoustoelectric photoresponse in graphene

The acoustoelectric current in graphene has been investigated as a function of illumination, using blue (450 nm) and red (735 nm) light-emitting diodes (LEDs), and surface acoustic wave (SAW) intensity and frequency. The measured acoustoelectric current increases with illumination, more than the measured change in the conductivity of the graphene, whilst retaining a linear dependence on the SAW intensity. The latter is consistent with the interaction between the carriers and SAWs being described by a relatively simple classical relaxation model suggesting that the change in the acoustoelectric current is caused by the effect of the illumination on the electronic properties of the graphene. The increase in the acoustoelectric current is greatest under illumination with the blue LED, consistent with the creation of a hot electron distribution.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

How to decide between competing efficiency droop models for GaN-based light-emitting diodes

GaN-based light-emitting diodes (LEDs) exhibit a strong efficiency droop with higher current injection, which has been mainly attributed to Auger recombination and electron leakage, respectively. Thus far, the few reports on direct measurements of these two processes do not confirm their dominating influence on the droop unambiguously. Advanced numerical simulations of experimental characteristics are shown to validate one or the other explanation by variation of uncertain material parameters. We finally demonstrate how the comparative simulation of temperature effects enables a clear distinction between both models. Contrary to common assumptions, the consistently measured efficiency reduction of blue LEDs with higher ambient temperature eliminates electron leakage as primary cause of the efficiency droop in these devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗