Switching and conduction behavior of amorphous semiconductor diodes
Phenomenology theory on conduction and switching behavior of amorphous semiconductor diodes
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Phenomenology theory on conduction and switching behavior of amorphous semiconductor diodes
Amorphous polymers thermal conductivity measured at 0.4-4 K, observing similar temperature dependences
Amorphous boron arsenide films deposited on Si substrates, measuring current voltage characteristics
Amorphous film formation and crystallization, discussing thermal stability
Optical properties of amorphous polymers, considering one state calculations for flexible polypeptides in solution and disordered regions of films or proteins
Specific heat of amorphous polymethyl methacrylate and polystyrene by pulse method below 4 K, comparing Debye and acoustic values
Electrical properties of metallic layers implanted in amorphous oxide glass
Electron and hole drift mobilities in photoconducting amorphous selenium
Measuring instrument for amorphous and polycrystalline materials resistivity and Seebeck coefficient as function of temperature and pressure
Coulomb interaction effect between charged traps in amorphous semiconductor, noting state density reduction at Fermi energy
Electron micrographs have been obtained which clearly show the existence of a void network in amorphous Ge films formed at substrate temperatures of 25 and 150 C, and the absence of a void network in films formed at higher substrate temperatures of 200 and 250 C. These results correlate quite well with density measurements and predictions of void densities by indirect methods.
Measurement of low-field and high-field resistivity in amorphous Ge in both the planar and transverse directions on the same samples, whose thickness ranged from 0.4 to 4 microns. No anisotropy was found, suggesting that the voids recently described by Galeener (1971) may not play a significant role in these transport processes.
The suggestion of Bibring et al. (1971) that the low albedos and reddish spectra observed in some lunar fines are caused by a low density amorphous substance which coats the fines is disputed. It is shown that these coatings have only a marginal effect on lunar reflectivity.
An enhanced residual conductivity which persists long after cessation of illumination has been observed in amorphous germanium at 77 K. The effect may be thermally quenched by heating to 120 K, returning the sample to its initial condition.
Investigation of the irreversible chemisorption of water, formic acid and acetic acid on a thin amorphous aluminum oxide film, using inelastic tunneling spectroscopy. All of the tunnel junctions employed were Al-Al2O3-Pb junctions with the adsorbate on the Al2O3 surface between the Al2O3 and the Pb electrode. The results obtained include the finding that all Al2O3 surfaces prepared by oxidation of Al have free CH groups present on them.
Dynamic mechanical spectra of amorphous stereoregular poly(methyl methacrylate)s and poly(t-butyl methacrylate)s with assigned microtacticities are presented and discussed. An intermolecular argument is invoked to account for the higher glass transition temperature of syndiotactic vis a vis isotactic PMMA, in spite of the higher density of the latter at 30 C. An argument is presented to show that the ratio of glassy-region relaxation temperature to glass transition temperature is not only a measure of the degree of coupling of the beta and glass transition processes, but also of the degree to which intermolecular factors influence these processes. The greater extent of the low-temperature irreversibilities observed in the thermomechanical spectra of poly(t-butyl methacrylate)s is attributed to the brittle character induced by the bulky side groups which presumably weaken cohesive forces.
Saturnian rings and icy satellites may be covered with amorphous rather than crystalline ice. Its likely source is water molecules sputtered by particles in the radiation belts, it may be stable, and its presence could be deduced from the rate of temperature drop in a shadow. Observation of this effect is, however, difficult, especially for the rings. A possible relation to the brightness anisotropy of ring A is pointed out.
Strongly adhering films of silicon are deposited directly on such materials as Pyrex and Vycor (or equivalent materials) and aluminum by a non-equilibrium plasma jet. Amorphous silicon films are formed by decomposition of silicon tetrachloride or trichlorosilane in the plasma. Plasma-jet technique can also be used to deposit an adherent silicon film on aluminum from silane and to dope such films with phosphorus. Ability to deposit silicon films on such readily available, inexpensive substrates could eventually lead to lower cost photovoltaic cells.