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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,315 records · Page 73
All sourcesNASA NTRSDOE OSTI
NASA NTRS2007

Far-Infrared Blocked Impurity Band Detector Development

DRS Sensors & Targeting Systems, supported by detector materials supplier Lawrence Semiconductor Research Laboratory, is developing far-infrared detectors jointly with NASA Langley under the Far-IR Detector Technology Advancement Partnership (FIDTAP). The detectors are intended for spectral characterization of the Earth's energy budget from space. During the first year of this effort we have designed, fabricated, and evaluated pilot Blocked Impurity Band (BIB) detectors in both silicon and germanium, utilizing pre-existing customized detector materials and photolithographic masks. A second-year effort has prepared improved silicon materials, fabricated custom photolithographic masks for detector process, and begun detector processing. We report the characterization results from the pilot detectors and other progress.

Hogue, H. H.↗
NASA NTRS2015

High Precision Metal Thin Film Liftoff Technique

A metal film liftoff process includes applying a polymer layer onto a silicon substrate, applying a germanium layer over the polymer layer to create a bilayer lift off mask, applying a patterned photoresist layer over the germanium layer, removing an exposed portion of the germanium layer, removing the photoresist layer and a portion of the polymer layer to expose a portion of the substrate and create an overhanging structure of the germanium layer, depositing a metal film over the exposed portion of the substrate and the germanium layer, and removing the polymer and germanium layers along with the overlaying metal film.

Brown, Ari D.↗
DOE OSTI2023

Achieving superior mechanical properties: Tailoring multicomponent microstructure in AISI 9254 spring steel through a two-stage Q&P process and nanoscale carbide integration

In the pursuit of lightweight, durable steel, we have successfully developed a multicomponent structure in AISI 9254 spring steel using a two-stage quenching and partitioning (Q&P) process. The primary objective of this process was to engineer an optimized microstructure consisting of nanobainite, martensite, and nano-carbides. Utilizing the insights gained from the results of advanced techniques such as X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and atom probe tomography (APT) performed on the as-received AISI 9254 spring steel, we refined the quenching and partitioning (Q&P) path, leading to the successful establishment of a bainitic transformation for superior mechanical properties. Our tensile tests revealed a high yield strength (≈ 1600 ± 25 MPa) and ultimate tensile strength (≈ 1850 ± 50 MPa), along with considerable elongation (≈ 11.15 ± 0.25%). We also identified that pre-formed martensite lath defects and high silicon content play crucial roles during the Q&P process, preventing carbide coalescence and increasing strain-hardening capacity. Finally, this study demonstrates the potential of a Q&P process to generate high-strength, ductile steel for automotive and aerospace applications.

36 MATERIALS SCIENCE↗
NASA NTRS1978

Silicon solar cells, a manufacturing cost analysis

A detailed cost analysis of solar cell module manufacturing, utilizing process sequences incorporating near-term technology, has been performed. The entire structuring of a factory to manufacture solar cell modules, starting from supplied polycrystalline silicon and other raw materials, was specified. This analysis then formed the basis for a sensitivity analysis of the major cost factors. The results of the cost and sensitivity analyses are presented here.

Grenon, L. A.↗
NASA NTRS1998

Computational Studies of the Interaction of H/H2 with Diamond and Silicon Surfaces

The interaction of hydrogen atoms and molecules with diamond and silicon surfaces is important in several important applications. Two areas that we are interested are: 1) tribology (molecular level friction) and 2) the role of H atoms in silicon chemical vapor deposition (CVD). In the tribology area, H atoms can be used to tie off dangling bonds, which otherwise form bonds between adjacent surfaces, and lead to resistance to sliding the surfaces by each other. Processes which are important in understanding molecular level friction include barriers to addition of H/H2 to the surface and barriers to migration of H atoms on the surface. In the silicon CVD area, we have studied the process of H2 elimination from the 100 surface of silicon. Cluster models for the dime surfaces of diamond are presented. The unrelaxed 100 surface has carbene like surface carbon atoms; however, for the relaxed surface these dimerize to give rows of surface dimers and there is a significant amount of p bonding between the radical orbitals of the dimer. The 110 surface has zig-zag rows of carbon atoms with a dangling bond on each carbon atom. These dangling bonds are hybridized away from each other and thus interact less strongly than for the 100 surface. Finally, the 111 surface has surface C atoms arranged in a triangular pattern and the surface dangling bonds are well separated from each other (second nearest neighbor distance) leading to almost no interaction between adjacent dangling bonds. These qualitative features may be quantified by computing the overlap of adjacent dangling bonds in a GVB(pp) calculation. The overlaps are 0.462, 0.292, and 0.016 for the diamond 100, 110, and 111 surfaces, respectively.

Walch, Stephen P.↗
DOE OSTI2016

Microwave irradiation induced band gap tuning of MoS{sub 2}-TiO{sub 2} nanocomposites

The MoS{sub 2}-TiO{sub 2} nanocomposites have been synthesized by sol-gel method and characterized by different microscopic and spectroscopic techniques. The crystallinity of these nanocomposites has been confirmed by X-ray diffraction (XRD) analysis. The Raman spectrum of MoS{sub 2}-TiO{sub 2} nanocomposites consists of three distinct peaks (E{sup 1} {sub g}, E{sup 1} {sub 2g} and A{sub 1g}) which are associated with TiO{sub 2} and MoS{sub 2}. The morphological study is carried out by scanning electron microscope. The effect of microwave irradiation on the band gap of MoS{sub 2}-TiO{sub 2} nanocomposites has been investigated; it is observed that the microwave irradiation causes decrease in the band gap of MoS{sub 2}-TiO{sub 2} nanocomposites. The microwave treated MoS{sub 2}-TiO{sub 2} thin films offers a novel process route in treating thin films for commercial applications.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2018

Shell-Protective Secondary Silicon Nanostructures as Pressure-Resistant High-Volumetric-Capacity Anodes for Lithium-Ion Batteries

Here, the nanostructure design of a prereserved hollow space to accommodate 300% volume change of silicon anodes has created exciting promises for high-energy batteries. However, challenges with weak mechanical stability during the calendering process of electrode fabrication and poor volumetric energy density remain to be solved. Here we fabricated a pressure-resistant silicon structure by designing a dense silicon shell coating on secondary micrometer particles, each consisting of many silicon nanoparticles. The silicon skin layer significantly improves mechanical stability, while the inner porous structure efficiently accommodates the volume expansion. Such a structure can resist a high pressure of over 100 MPa and is well-maintained after the calendering process, demonstrating a high volumetric capacity of 2041 mAh cm–3. In addition, the dense silicon shell decreases the surface area and thus increases the initial Coulombic efficiency. With further encapsulation with a graphene cage, which allows the silicon core to expand within the cage while retaining electrical contact, the silicon hollow structure exhibits a high initial Coulombic efficiency and fast rise of later Coulombic efficiencies to >99.5% and superior stability in a full-cell battery.

25 ENERGY STORAGE↗
DOE OSTI2022

Environmentally Sound One-Step Solar Silicon From Natural Quartzite

This project aimed to demonstrate a new molten salt electrodeposition process to go straight from low-cost silica at $200/tonne ($40¢/kg Si basis) to polysilicon in a single step using less than 30 kWh/kg. This would eliminate the carbothermic reduction step and all direct greenhouse emissions, along with 90% of the energy. It would also eliminate the chemical hazards of chlorosilane handling which have resulted in multiple fatalities in the polysilicon industry – in Japan, the US and China. This project had the following major accomplishments: Stakeholder engagement indicated that the solar silicon market is very sensitive to price, provided quality is sufficient. The most important measure of silicon quality is not purity but carrier lifetime, as many impurities can reduce performance at concentrations too small to measure; Experiments set a baseline of current efficiency which is too low for commercial application (~3%), with electronic current ruled out as a mechanism for reduced current efficiency; A scale-up plant narrative narrative described a potential plant and formed the basis for the TEA components; TEA showed that current efficiency, large cell size, and zirconia membrane lifetime are key factors which determine capital and operating costs for the process.

14 SOLAR ENERGY↗
DOE OSTI2025

Schrödinger cat states of a nuclear spin qudit in silicon

High-dimensional quantum systems are a valuable resource for quantum information processing. They can be used to encode error-correctable logical qubits, which has been demonstrated using continuous-variable states in microwave cavities or the motional modes of trapped ions. For example, high-dimensional systems can be used to realize ‘Schrödinger cat’ states, which are superpositions of widely displaced coherent states that can be used to illustrate quantum effects at large scales. Recent proposals have suggested encoding qubits in high-spin atomic nuclei, which are finite-dimensional systems that can host hardware-efficient versions of continuous-variable codes. Here, in this study, we demonstrate the creation and manipulation of Schrödinger cat states using the spin-7/2 nucleus of an antimony atom embedded in a silicon nanoelectronic device. We use a multi-frequency control scheme to produce spin rotations that preserve the symmetry of the qudit, and we constitute logical Pauli operations for qubits encoded in the Schrödinger cat states. Our work demonstrates the ability to prepare and control non-classical resource states, which is a prerequisite for applications in quantum information processing and quantum error correction, using our scalable, manufacturable semiconductor platform.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS2000

Fracture Tests of Etched Components Using a Focused Ion Beam Machine

Many optical MEMS device designs involve large arrays of thin (0.5 to 1 micron components subjected to high stresses due to cyclic loading. These devices are fabricated from a variety of materials, and the properties strongly depend on size and processing. Our objective is to develop standard and convenient test methods that can be used to measure the properties of large numbers of witness samples, for every device we build. In this work we explore a variety of fracture test configurations for 0.5 micron thick silicon nitride membranes machined using the Reactive Ion Etching (RIE) process. Testing was completed using an FEI 620 dual focused ion beam milling machine. Static loads were applied using a probe. and dynamic loads were applied through a piezo-electric stack mounted at the base of the probe. Results from the tests are presented and compared, and application for predicting fracture probability of large arrays of devices are considered.

Kuhn, Jonathan, L.↗
NASA NTRS2015

Concept Demonstration of Dopant Selective Reactive Etching (DSRIE) in Silicon Carbide

Accurate quantification of combustor pressure dynamics for the primary purpose of experimental validation of computational fluid dynamics (CFD) codes requires the use of robust, reliable and sensitive pressure sensors that can resolve sub--pound-per-square-inch pressure levels in high temperature environments (i.e., combustor). The state of the art microfabricated piezoresistive silicon carbide (SiC) pressure sensors that we have developed are capable of operating reliably at 600 degrees Centigrade. This technology was used in support of the ARMD ISRP-ERA (NASA's Aeronautics Research Mission Directorate, Integrated System Research Project - Environmentally Responsible Aviation) program to quantify combustor thermoacoustic instabilities. The results showed that while the SiC pressure sensors survived the high temperature and measured instabilities, the diaphragm (force collector) was not thin enough to be sensitive in resolving sub-pound-per-square-inch pressures; 30 meters is the thinnest diaphragm achievable with conventional reactive ion etching (RIE) processes. Therefore, this precludes its use for sub-pound-per-square-inch pressure measurement with high fidelity. In order to effectively resolve sub-pound-per-square-inch pressures, a thinner more sensitive diaphragm (10 meters) is needed. To achieve this would require a new and innovative fabrication process technique.

static↗
DOE OSTI2016

Laser material processing with tightly focused cylindrical vector beams

We demonstrate a comprehensive modification study of silica glass, crystalline silicon, and amorphous silicon film, irradiated by tightly focused cylindrical vector beams with azimuthal and radial polarizations. The evidence of the longitudinal field associated with radial polarization is revealed by second harmonic generation in z-cut lithium niobate crystal. Despite the lower threshold of ring-shaped modification of silicon materials, the modification in the center of single pulse radially polarized beam is not observed. The phenomenon is interpreted in terms of the enhanced reflection of longitudinal component at the interface with high-index contrast, demonstrating that the longitudinal component is inefficient for the flat surface modification. Enhanced interaction of the longitudinal light field with silicon nanopillar structures produced by the first pulse of double-pulse irradiation is also demonstrated.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

A Survey on the Design, Detection, and Prevention of Pre-Silicon Hardware Trojans

The complexity of the semiconductor design lifecycle and globalized manufacturing process creates concern over the threat of deliberate malicious alterations, or hardware Trojans, being inserted into microelectronic designs. This has resulted in a significant corpus of hardware Trojan research including Trojan design and benchmarking efforts and development of corresponding metrics and detection and prevention techniques, over the last two decades. In this survey, we first highlight efforts in Trojan design and benchmarking, followed by a cataloging of seminal and recent works in Trojan detection and prevention and their accompanied metrics. Given the volume of literature in this field, this survey considers only pre-silicon techniques. We make this distinction between pre- and post-silicon to properly scope and provide appropriate context into the capabilities of existing hardware Trojan literature. Each major section (design, prevention, and detection) is accompanied by insights, and common pitfalls, which we highlight can be addressed by future research.

42 ENGINEERING↗
DOE OSTI2024

Microfabricated Ion Traps on Sapphire for Larger Trap Areas and Higher Qubit Count

Surface ion traps are a promising platform for quantum computing due to their potential to store large numbers of ions that can be addressed by electrical and optical control signals in order to implement quantum algorithms. Increasing the power of the quantum computer requires increasing the number of ions, but this poses a significant challenge in that it leads to a non-linear increase in on-chip power dissipation. The primary contributor to this power scaling in current devices is the capacitance between the radio frequency (RF) electrode and the metal plane that shields the silicon substrate from the RF signals applied to it. Silicon has traditionally been chosen for the substrate material for compatibility with the processing required for multi-metal-level traps. In this work, we address these capacitance and fabrication challenges by replacing the commonly used silicon substrate with an insulating sapphire substrate to fabricate a multi-metal-level ion trap, while still employing common semiconductor manufacturing techniques. This change in substrate allows the design to remove the metal shielding from the device design, reducing the capacitance of the RF electrode. The electrical characteristics of these traps were measured, specifically trap impedance, capacitance, and voltage breakdown, and compared to nearly identical silicon trap devices. Finally, we used laser cutting techniques to shape a sapphire wafer into bowtie shapes matching silicon traps previously fabricated at Sandia National Labs to explore solutions for integrating sapphire substrates into non-rectangular ion trap designs.

97 MATHEMATICS AND COMPUTING↗
NASA NTRS2004

RFID and Memory Devices Fabricated Integrally on Substrates

Electronic identification devices containing radio-frequency identification (RFID) circuits and antennas would be fabricated integrally with the objects to be identified, according to a proposal. That is to say, the objects to be identified would serve as substrates for the deposition and patterning of the materials of the devices used to identify them, and each identification device would be bonded to the identified object at the molecular level. Vacuum arc vapor deposition (VAVD) is the NASA derived process for depositing layers of material on the substrate. This proposal stands in contrast to the current practice of fabricating RFID and/or memory devices as wafer-based, self-contained integrated-circuit chips that are subsequently embedded in or attached to plastic cards to make smart account-information cards and identification badges. If one relies on such a chip to store data on the history of an object to be tracked and the chip falls off or out of the object, then one loses both the historical data and the means to track the object and verify its identity electronically. Also, in contrast is the manufacturing philosophy in use today to make many memory devices. Today s methods involve many subtractive processes such as etching. This proposal only uses additive methods, building RFID and memory devices from the substrate up in thin layers. VAVD is capable of spraying silicon, copper, and other materials commonly used in electronic devices. The VAVD process sprays most metals and some ceramics. The material being sprayed has a very strong bond with the substrate, whether that substrate is metal, ceramic, or even wood, rock, glass, PVC, or paper. An object to be tagged with an identification device according to the proposal must be compatible with a vacuum deposition process. Temperature is seldom an issue as the substrate rarely reaches 150 F (66 C) during the deposition process. A portion of the surface of the object would be designated as a substrate for the deposition of the device. By use of a vacuum arc vapor deposition apparatus, a thin electrically insulating film would first be deposited on the substrate. Subsequent layers of materials would then be deposited and patterned by use of known integrated-circuit fabrication techniques. The total thickness of the deposited layers could be much less than the 100- m thickness of the thinnest state-of-the-art self-contained microchips. Such a thin deposit could be readily concealed by simply painting over it. Both large vacuum chambers for production runs and portable hand-held devices for in situ applications are available.

Schramm, Harry F.↗
NASA NTRS1982

Photovoltaic module encapsulation design and materials selection, volume 1

Encapsulation material system requirements, material selection criteria, and the status and properties of encapsulation materials and processes available are presented. Technical and economic goals established for photovoltaic modules and encapsulation systems and their status are described. Available encapsulation technology and data are presented to facilitate design and material selection for silicon flat plate photovoltaic modules, using the best materials available and processes optimized for specific power applications and geographic sites. The operational and environmental loads that encapsulation system functional requirements and candidate design concepts and materials that are identified to have the best potential to meet the cost and performance goals for the flat plate solar array project are described. Available data on encapsulant material properties, fabrication processing, and module life and durability characteristics are presented.

Cuddihy, E.↗
NASA NTRS1987

High-temperature electronics

In recent years, there was a growing need for electronics capable of sustained high-temperature operation for aerospace propulsion system instrumentation, control and condition monitoring, and integrated sensors. The desired operating temperature in some applications exceeds 600 C, which is well beyond the capability of currently available semiconductor devices. Silicon carbide displays a number of properties which make it very attractive as a semiconductor material, one of which is the ability to retain its electronic integrity at temperatures well above 600 C. An IR-100 award was presented to NASA Lewis in 1983 for developing a chemical vapor deposition process to grow single crystals of this material on standard silicon wafers. Silicon carbide devices were demonstrated above 400 C, but much work remains in the areas of crystal growth, characterization, and device fabrication before the full potential of silicon carbide can be realized. The presentation will conclude with current and future high-temperature electronics program plans. Although the development of silicon carbide falls into the category of high-risk research, the future looks promising, and the potential payoffs are tremendous.

Seng, Gary T.↗