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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Circuit offers low switching loss and automatic compensation for failure of ballast resistor. Discrete/PWM ballast-resistor controller improved shunt voltage-regulator circuit designed to supply power from high-resistance source to low-impedance bus. Provides both coarse discrete voltage levels (by switching of ballast resistors) and continuous fine control of voltage via pulse-width modulation.
Spinel-structured LiNi x Mn 2-x O 4 (LNMO), with low-cost earth-abundant constituents, is a promising high-voltage cathode material for lithium-ion batteries. Even though extensive electrochemical investigations have been conducted on these materials, few studies have explored correlations between their loss in performance and associated changes in microstructure. Here, down to the atomic scale, the structural evolution of these materials is investigated upon the progressive cycling of lithium-ion cells. Transgranular cracking is revealed to be a key feature during cycling; this cracking is initiated at the particle surface and leads to the penetration of electrolytes along the crack path, thereby increasing particle exposure to the electrolyte. The lattice structure on the crack surface shows spatial variances, featuring a top layer of rock-salt, a sublayer of a Mn 3 O 4 -like arrangement, and then a mixed-cation region adjacent to the bulk lattice. The transgranular cracking, along with the emergence of local lattice distortion, becomes more evident with extended cycling. Further, phase transformation at primary particle surfaces and void formation through vacancy condensation is found in the cycled samples. All these features collectively contribute to the performance degradation of the battery cells during electrochemical cycling.
Performance of the iron-titanium redox flow cell was studied as a function of acid concentration. Anion permeable membranes separated the compartments. Electrodes were graphite cloth. Current densities ranged up to 25 mA/square centimeter. Open-circuit and load voltages decreased as the acidity was increased on the iron side as predicted. On the titanium side, open-circuit voltages decreased as the acidity was increased in agreement with theory, but load voltages increased due to decreased polarization with increasing acidity. High acidity on the titanium side coupled with low acidity on the iron side gives the best load voltage, but such cells show voltage losses as they are repeatedly cycled. Analyses show that the bulk of the voltage losses are due to diffusion of acid through the membrane.
A critical PECL (positive emitter-coupled logic) interface to Xilinx interface needed to be changed on an existing flight board. The new Xilinx input interface used a CMOS (complementary metal-oxide semiconductor) type of input, and the driver could meet its thresholds typically, but not in worst-case, according to the data sheet. The previous interface had been based on comparison with an external reference, but the CMOS input is based on comparison with an internal divider from the power supply. A way to measure what the exact input threshold was for this device for 64 inputs on a flight board was needed. The measurement technique allowed an accurate measurement of the voltage required to switch a Xilinx input from high to low for each of the 64 lines, while only probing two of them. Directly driving an external voltage was considered too risky, and tests done on any other unit could not be used to qualify the flight board. The two lines directly probed gave an absolute voltage threshold calibration, while data collected on the remaining 62 lines without probing gave relative measurements that could be used to identify any outliers. The PECL interface was forced to a long-period square wave by driving a saturated square wave into the ADC (analog to digital converter). The active pull-down circuit was turned off, causing each line to rise rapidly and fall slowly according to the input s weak pull-down circuitry. The fall time shows up as a change in the pulse width of the signal ready by the Xilinx. This change in pulse width is a function of capacitance, pulldown current, and input threshold. Capacitance was known from the different trace lengths, plus a gate input capacitance, which is the same for all inputs. The pull-down current is the same for all inputs including the two that are probed directly. The data was combined, and the Excel solver tool was used to find input thresholds for the 62 lines. This was repeated over different supply voltages and temperatures to show that the interface had voltage margin under all worst case conditions. Gate input thresholds are normally measured at the manufacturer when the device is on a chip tester. A key function of this machine was duplicated on an existing flight board with no modifications to the nets to be tested, with the exception of changes in the FPGA program.
Voltage pulses in capacitors and insulated wires during low-energy electron irradiation
Recent advances in solar cell technology have led to the development of laboratory cells with efficiencies above 15% and production cells with efficiencies in the area of 13%. The increased output is largely the result of increases in the short-circuit current. The most significant gain in the amount of light entering the cell has been obtained through surface texturing by chemical etching techniques. Sheet resistances resulting from phosphorus diffusion in the 800 C temperature range yield junction depths on the order of 0.1 micrometer, leading to significant increases in the blue region of the cell spectral response. The inclusion of a back surface field in 10 ohm-cm cells has produced an increase in open-circuit voltage of about 50 mV and an increase in the minority carrier lifetime. It appears that a low emitter efficiency of the diffused region is the cause of poor voltages. Future research will be primarily directed toward correcting this deficiency and toward the development of low cost production methods.
Low-inductance, high-capacitance Marx pulse generator provides for minimization of internal inductance and suppression of external electromagnetic radiation. The spark gaps of the generator are enclosed in a pressurized nitrogen atmosphere which allows the charging voltage to be varied by changing the nitrogen pressure.
An optical voltage sensor utilizing an electrooptic polymer is disclosed for application to electric power distribution systems. The sensor, which can be manufactured at low cost in accordance with a disclosed method, measures voltages across a greater range than prior art sensors. The electrooptic polymer, which replaces the optical crystal used in prior art sensors, is sandwiched directly between two high voltage electrodes. Voltage is measured by fiber optical means, and no voltage division is required. The sample of electrooptic polymer is fabricated in a special mold and later mounted in a sensor housing. Alternatively, mold and sensor housing may be identical. The sensor housing is made out of a machinable polymeric material and is equipped with two opposing optical windows. The optical windows are mounted in the bottom of machined holes in the wall of the mold. These holes provide for mounting of the polarizing optical components and for mounting of the fiber optic connectors. One connecting fiber is equipped with a light emitting diode as a light source. Another connecting fiber is equipped with a photodiode as a detector.
Previous research investigated the modeling of a N Wga te constructed of Metal-Ferroelectric- Semiconductor Field-Effect Transistors (MFSFETs) to obtain voltage transfer curves. The NAND gate was modeled using n-channel MFSFETs with positive polarization for the standard CMOS n-channel transistors and n-channel MFSFETs with negative polarization for the standard CMOS p-channel transistors. This paper investigates the MFSFET NAND gate switching time propagation delay, which is one of the other important parameters required to characterize the performance of a logic gate. Initially, the switching time of an inverter circuit was analyzed. The low-to-high and high-to-low propagation time delays were calculated. During the low-to-high transition, the negatively polarized transistor pulls up the output voltage, and during the high-to-low transition, the positively polarized transistor pulls down the output voltage. The MFSFETs were simulated by using a previously developed model which utilized a partitioned ferroelectric layer. Then the switching time of a 2-input NAND gate was analyzed similarly to the inverter gate. Extension of this technique to more complicated logic gates using MFSFETs will be studied.
The design of electrometer circuitry using an integrated circuit operational amplifier with a MOSFET input is described. Input protection against static voltages is provided by a dual ultra low leakage diode or a neon lamp. Factors affecting frequency response leakage resistance, and current stability are discussed, and methods are suggested for increasing response speed and for eliminating leakage resistance and current instabilities. Based on the above, two practical circuits, one having a linear response and the other a logarithmic response, were designed and evaluated experimentally. The design of a sweep circuit to implement mobility measurements using atmospheric probes is presented. A triangular voltage waveform is generated and shaped to contain a step in voltage from zero volts in both positive and negative directions.
Preliminary observations indicate that an ultrasonic scanning technique may be useful as a quick, low cost, nondestructive method for judging the quality of circuit board materials for high voltage applications. Corona inception voltage tests were conducted on fiberglass-epoxy and fiberglass-polyimide high pressure laminates from 20 to 140 C. The same materials were scanned ultrasonically by utilizing the single transducer, through-transmission technique with reflector plate, and recording variations in ultrasonic energy transmitted through the board thickness. A direct relationship was observed between ultrasonic transmission level and corona inception voltage. The ultrasonic technique was subsequently used to aid selection of high quality circuit boards for the Communications Technology Satellite.
Preliminary observations indicate that an ultrasonic scanning technique may be useful as a quick, low cost, nondestructive method for judging the quality of circuit board materials for high voltage applications. Corona inception voltage tests were conducted on fiberglass-epoxy and fiberglass-polyimide high pressure laminates from 20 to 140 C. The same materials were scanned ultrasonically by utilizing the single transducer, through-transmission technique with reflector plate, and recording variations in ultrasonic energy transmitted through the board thickness. A direct relationship was observed between ultrasonic transmission level and corona inception voltage. The ultrasonic technique was subsequently used to aid selection of high quality circuit boards for the Communications Technology Satellite.
Current-voltage measurements have been made on terrestrial solar cell modules of the DOE/JPL Low Cost Silicon Solar Array procurement. Data on short circuit current, open circuit voltage, and maximum power for the four types of modules are presented in normalized form, showing distribution of the measured values. Standard deviations from the mean values are also given. Tests of the statistical significance of the data are discussed.
The behavior of the gain-voltage characteristic of the mid-wavelength infrared cutoff HgCdTe linear mode avalanche photodiode (e-APD) is discussed both experimentally and theoretically as a function of the width of the multiplication region. Data are shown that demonstrate a strong dependence of the gain at a given bias voltage on the width of the n− gain region. Geometrical and fundamental theoretical models are examined to explain this behavior. The geometrical model takes into account the gain-dependent optical fill factor of the cylindrical APD. The theoretical model is based on the ballistic ionization model being developed for the HgCdTe APD. It is concluded that the fundamental theoretical explanation is the dominant effect. A model is developed that combines both the geometrical and fundamental effects. The model also takes into account the effect of the varying multiplication width in the low bias region of the gain-voltage curve. It is concluded that the lower than expected gain seen in the first 2 × 8 HgCdTe linear mode photon counting APD arrays, and higher excess noise factor, was very likely due to the larger than typical multiplication region length in the photon counting APD pixel design. The implications of these effects on device photon counting performance are discussed.
Organic strain gauge and other sensors require high-gain, precision dc amplification to process their low-level output signals. Ideally, amplifiers would be fabricated using organic thin-film field-effect transistors (OTFT's) adjacent to the sensors. However, OTFT amplifiers exhibit low gain and high input-referred dc offsets that must be effectively managed. This paper presents a four-stage, cascaded differential OTFT amplifier utilizing switched capacitor auto-zeroing. Each stage provides a nominal voltage gain of four through a differential pair driving low-impedance active loads, which provide common-mode output voltage control. p-type pentacence OTFT's are used for the amplifier devices and auto-zero switches. Simulations indicate the amplifier provides a nominal voltage gain of 280 V/V and effectively amplifies a 1-mV dc signal in the presence of 500-mV amplifier input-referred dc offset voltages. Future work could include the addition of digital gain calibration and offset correction of residual offsets associated with charge injection imbalance in the differential circuits.
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Gas tungsten arc welds were made on low alloy steel plates to which intentional defects (discontinuities) were imposed. Disruption of shielding gas, welding over surface films, and tack welds produce changes in what is otherwise a relatively uniform voltage signal. The arc voltage was 15 volts + or - 2 volts with 300 mV ripple noise from the power supply. Changes in this steady noise voltage varied from 50 mV to less than one millivolt depending on the severity and the type of change experienced. In some instances the changes were easily detected by analysis of the signal in real time, while in other cases the signal had to transformed to the frequency domain in order to detect the changes. Discontinuities as small as 1.5 mm in length were detected. The ultimate sensitivity and reproducibility of the technique is still being investigated.
Progress made by NASA toward implementation of equipment for the conversion, management, and distribution of voltage power in space applications are reviewed. Work has been carried forward on components such as bipolar transistors, deep impurity semiconductors, conductors, dielectrics, magnetic devices, and rotary power transfer. Specific programs for the high voltage systems have included research on lightweight, low-cost conductors featuring graphite fibers containing electron donor materials for wires and cables with reduced mass and the conductivity of copper. Attention has also been given p-n junction technology for high-speed, high-current, high-voltage materials and diamond-like dielectric films which are hard, have high dielectric strength, and can operate up to 300 C. A transistor has been fabricated with a voltage of 1200 V at 100 A, with a gain of 10 and a 0.5 microsec rise/fall time. A 25 kW transformer has also been built which performs at 20 kHz with an efficiency of 99.2%.