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Total Ionizing Dose response (ID) of SDRAM (Synchronous Dynamic Random Access Memory), DDR2 (Double Data Rate2) and DDR3 (Double Data Rate3) memories is reported in static bias, and auto refresh modes. Data analysis reveals some types of memory have significant increases in stuck bits during TID exposure when refreshed.
Total ionizing dose, displacement damage dose, and single-event effect testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include optoelectronics, digital, analog, bipolar devices, and FPGAs.
This data compendium reports single event transient (SET) and total ionizing dose (TID) test results for commonly used commercial-off-the-shelf (COTS) and radiation hardened voltage comparators targeted for possible use in space-based missions. Interesting trends in the variability of the radiation performance of these devices due to differences in lot date codes, manufacturers, circuit design, and test conditions are analyzed herein.
Total ionizing dose, displacement damage dose, and single-event effect testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include optoelectronics, digital, analog, bipolar devices, and FPGAs.
A0.0ircraft dropsonde observations provide the most comprehensive measurements to date of horizontal water vapor transport in atmospheric rivers (AR). The CalWater experimen0 t 0.0recently more than tripled the number of ARs probed with the required measurements. This study uses vertical profiles of water vapor, wind, and pressure obtained from 304 dropsondes across 21 ARs. On average, total water vapor transport (TIVT) in an AR was 4.7108 2108 kg s-1. This magnitude is 2.6 times larger than the average discharge of liquid water from the Amazon River. The mean AR width was 890 270 km. Subtropical ARs contained larger IWV but weaker winds than midlatitude ARs, although average TIVTs were nearly the same. Mean TIVTs calculated by defining the lateral edges of ARs using an IVT-threshold versus an IWV-threshold produced results that differed by less than 10 across all cases, but did vary between midlatitudes and subtropical regions.
Total column measurements of CO2 (XCO2) have been proposed as a possible way to estimate emissions from large urban regions. Using calculations from the Weather Research and Forecasting (WRF) model with a 1km emissions field, we investigate the viability of both real and proposed observing systems consisting of surface and/or column measurements for constraining emission sources of various types and sizes in the San Francisco Bay Area. We find that column observations are best suited for assessing enhancements downwind of very large emissions sources. For smaller sources (such as highways), in situ surface monitors are required to provide sufficient sensitivity. We explore methods for estimating emissions from the real and simulated observations.
The purpose of this test was to characterize the OMH3075 Hall Effects sensor degradation for total dose response. The device samples were exposed to low dose irradiations using gamma radiation. Device parameters such as magnetic operating points, leakage currents, supply currents, and rise and fall times were investigated.
Semicoa's silicon switching transistors, JANTXV2N2222AUB was tested for total ionizing dose (TID) response beginning on November 4, 2019. This test served as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) could be determined.
Total ionizing dose and displacement damage testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.
Analog Devices’ AD654 was tested for total ionizing dose (TID) response beginning on February 13, 2017. This device has the Radiation Effects and Analysis Group Identification (REAG ID) number 16-036. This test served as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) could be determined.
The purpose of this test is to determine the total-ionizing dose (TID) susceptibility of the LTC6268-10 from Linear Technology Corporation.
The purpose of this test was to characterize the Micron 512 GB NAND (MT29F512G08AUCBBH8-6IT:B) flash memory parameter degradation for total dose response. In the test, the device was exposed to high dose rate (HDR) irradiations using gamma radiation. Device parameters such as leakage currents, quantity of upset bits and overall chip and die health were investigated.
The purpose of this testing was to characterize Analog Devices’ AD8065 FastFET amplifier for low-dose rate (LDR) total ionizing dose (TID) response based on the Lucy project requirements and will be used on the L’ORRI instrument being built by Johns Hopkins University Applied Physics Lab. The AD8065 is a voltage feedback amplifier with FET inputs developed with the proprietary eXtra Fast Complementary Bipolar (XFCB) process. The amplifier boasts low noise operation and very high input impedance with a wide supply voltage range.
High dose rate irradiation with hydrogen stress is proposed as an accelerated total dose test method for bipolar linear circuits. The method is validated across process and circuit technologies with five parts that are commonly used in space: a comparator (LM193 from National Semi-conductor), a voltage regulator (HSYE-117 RH from Intersil), a voltage reference (LT1019 from Linear Technology), a JFET input op amp (OP42 from Analog Devices) and a temperature transducer (AD590 from Analog Devices). The testing technique could rapidly establish an upper bound to the low dose rate response of parts in space and help with the part selection process in the design phase of a mission. The technology dependence and the viability of this technique are qualitatively explored using a physical model describing the dose rate response and the effect of hydrogen in bipolar technologies. The model uses four core processes: 1) space charge effects, 2) free electron/hole pair recombination, hole-hydrogen defect reactions in the oxides and 4) proton depassivation of dangling bonds at the Si/SiO2 interface. Radiation hardness assurance implications are discussed.
Total dose tests of six different low dropout voltage regulators show sensitivity to both dose rate and bias during exposure. All devices tested exhibited Enhanced Low Dose Rate Sensitivity (ELDRS) and performed worse for the unbiased irradiation condition. Behavior of critical parameters in different dose rate and bias conditions is compared and the impact to hardness assurance methodology is discussed.
The Global positioning system satellites and a world-wide network of dual-frequency GPS receivers can be use to measure ionspheric total electon content (TEC) on global scales. A new method for generating global TEC maps is described.
Microelectromechanical sensors, ADXL50 and XMMAS40G accelerometers, which are fabricated with surface micromachining techniques are characterized for total dose radiation. An unusual failure mechanism that appears to be associated with the sensor was observed and presented in this paper.
A first-generation CMOS Charged Particle Spectrometer chip [1] was designed at JPL for flight on the STRV-2 spacecraft. These devices will collect electron and proton spectra in low Earth orbit as part of an experiment to demonstrate Active Pixel Sensor (APS) technology in space. This paper presents the results of total dose testing on these chips and, where possible, attempts to extend the results to other Active Pixel Sensors.