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At least 1,315 records · Page 73

Thin film memory matrix using amorphous and high resistive layers

Memory cells in a matrix are provided by a thin film of amorphous semiconductor material overlayed by a thin film of resistive material. An array of parallel conductors on one side perpendicular to an array of parallel conductors on the other side enable the amorphous semiconductor material to be switched in addressed areas to be switched from a high resistance state to a low resistance state with a predetermined level of electrical energy applied through selected conductors, and thereafter to be read out with a lower level of electrical energy. Each cell may be fabricated in the channel of an MIS field-effect transistor with a separate common gate over each section to enable the memory matrix to be selectively blanked in sections during storing or reading out of data. This allows for time sharing of addressing circuitry for storing and reading out data in a synaptic network, which may be under control of a microprocessor.

Thakoor, Anilkumar P.↗

Mars Crustal Dichotomy: Large Lowland Impact Basins may have Formed in Pre-Thinned Crust

Crater retention ages of large impact basins on Mars suggest most formed in a relatively short time, perhaps in less than 200 million years. Large basins in the lowlands have thinner central regions than similar size basins in the highlands. Large lowland impact basins, which we previously suggested might explain the low topography and thin crust of the northern part of Mars, may have formed in crust already thinned by yet earlier processes.

Frey, H. V.↗

Some Considerations for Precision Metrology of Thin X-Ray Mirrors

Determination of the shape of very thin x-ray mirrors employed in spaced-based telescopes continues to be challenging. The mirrors shapes are not readily deduced to the required accuracy because the mount induced distortions are often larger than the uncertainty tolerable for the mission metrology. In addition to static deformations, dynamic and thermal considerations are exacerbated for this class of mirrors. We report on the performance of one temporary mounting scheme for the thin glass mirrors for the Constellation-X mission and prospects for deducing their undistorted shapes.

Lehan, J. P.↗

Thin, nearly wireless adaptive optical device

A thin, nearly wireless adaptive optical device capable of dynamically modulating the shape of a mirror in real time to compensate for atmospheric distortions and/or variations along an optical material is provided. The device includes an optical layer, a substrate, at least one electronic circuit layer with nearly wireless architecture, an array of actuators, power electronic switches, a reactive force element, and a digital controller. Actuators are aligned so that each axis of expansion and contraction intersects both substrate and reactive force element. Electronics layer with nearly wireless architecture, power electronic switches, and digital controller are provided within a thin-film substrate. The size and weight of the adaptive optical device is solely dominated by the size of the actuator elements rather than by the power distribution system.

Knowles, Gareth↗

Shear Thinning Near the Critical Point of Xenon

We measured shear thinning, a viscosity decrease ordinarily associated with complex liquids, near the critical point of xenon. The data span a wide range of reduced shear rate: 10(exp -3) < gamma-dot tau < 700, where gamma-dot tau is the shear rate scaled by the relaxation time tau of critical fluctuations. The measurements had a temperature resolution of 0.01 mK and were conducted in microgravity aboard the Space Shuttle Columbia to avoid the density stratification caused by Earth's gravity. The viscometer measured the drag on a delicate nickel screen as it oscillated in the xenon at amplitudes 3 mu,m < chi (sub 0) >430 mu, and frequencies 1 Hz < omega/2 pi < 5 Hz. To separate shear thinning from other nonlinearities, we computed the ratio of the viscous force on the screen at gamma-dot tau to the force at gamma-dot tau approximates 0: C(sub gamma) is identical with F(chi(sub 0), omega tau, gamma-dot tau )/F)(chi(sub 0, omega tau, 0). At low frequencies, (omega tau)(exp 2) < gamma-dot tau, C(sub gamma) depends only on gamma-dot tau, as predicted by dynamic critical scaling. At high frequencies, (omega tau)(exp 2) > gamma-dot tau, C(sub gamma) depends also on both x(sub 0) and omega. The data were compared with numerical calculations based on the Carreau-Yasuda relation for complex fluids: eta(gamma-dot)/eta(0)=[1+A(sub gamma)|gamma-dot tau|](exp - chi(sub eta)/3+chi(sub eta)), where chi(sub eta) =0.069 is the critical exponent for viscosity and mode-coupling theory predicts A(sub gamma) =0.121. For xenon we find A(sub gamma) =0.137 +/- 0.029, in agreement with the mode coupling value. Remarkably, the xenon data close to the critical temperature T(sub c) were independent of the cooling rate (both above and below T(sub c) and these data were symmetric about T(sub c) to within a temperature scale factor. The scale factors for the magnitude of the oscillator s response differed from those for the oscillator's phase; this suggests that the surface tension of the two-phase domains affected the drag on the screen below T(sub c).

Zimmerli, Gregory A.↗

Shear Thinning in Xenon

We measured shear thinning, a viscosity decrease ordinarily associated with complex liquids such as molten plastics or ketchup, near the critical point of xenon. The data span a wide range of dimensionless shear rate: the product of the shear rate and the relaxation time of critical fluctuations was greater than 0.001 and was less than 700. As predicted by theory, shear thinning occurred when this product was greater than 1. The measurements were conducted aboard the Space Shuttle Columbia to avoid the density stratification caused by Earth's gravity.

Bergm Robert F.↗

Dual-Input AND Gate From Single-Channel Thin-Film FET

A regio-regular poly(3-hexylthiophene) (RRP3HT) thin-film transistor having a split-gate architecture has been fabricated on a doped silicon/silicon nitride substrate and characterized. RRP3HT is a semiconducting polymer that has a carrier mobility and on/off ratio when used in a field effect transistor (FET) configuration. This commercially available polymer is very soluble in common organic solvents and is easily processed to form uniform thin films. The most important polymer-based device fabricated and studied is the FET, since it forms the building block in logic circuits and switches for active matrix (light-emitting-diode) (LED) displays, smart cards, and radio frequency identification (RFID) cards.

Miranda, F. A.↗

Space Plasma Testing of High-Voltage Thin-Film Solar Arrays with Protective Coatings

This paper gives an overview of the space plasma test program for thin-film photovoltaics (TFPV) technologies developed at the Air Force Research Laboratory (AFRL). The main objective of this program is to simulate the effects of space plasma characteristic of LEO and MEO environments on TFPV. Two types of TFPV, amorphous silicon (a-Si) and copper-indium-gallium-diselenide (CIGS), coated with two types of thin-film, multifunctional coatings were used for these studies. This paper reports the results of the first phase of this program, namely the results of preliminary electrostatic charging, arcing, dielectric breakdown, and collection current measurements carried out with a series of TFPV exposed to simulated space plasma at the NASA Glenn Plasma Interaction Facility. The experimental data demonstrate that multifunctional coatings developed for this program provide effective protection against the plasma environment while minimizing impact on power generation performance. This effort is part of an ongoing program led by the Space Vehicles Directorate at the AFRL devoted to the development and space qualification of TFPV and their protective coatings.

Tlomak, Pawel↗

Apparatus Measures Thermal Conductance Through a Thin Sample from Cryogenic to Room Temperature

An apparatus allows the measurement of the thermal conductance across a thin sample clamped between metal plates, including thermal boundary resistances. It allows in-situ variation of the clamping force from zero to 30 lb (133.4 N), and variation of the sample temperature between 40 and 300 K. It has a special design feature that minimizes the effect of thermal radiation on this measurement. The apparatus includes a heater plate sandwiched between two identical thin samples. On the side of each sample opposite the heater plate is a cold plate. In order to take data, the heater plate is controlled at a slightly higher temperature than the two cold plates, which are controlled at a single lower temperature. The steady-state controlling power supplied to the hot plate, the area and thickness of samples, and the temperature drop across the samples are then used in a simple calculation of the thermal conductance. The conductance measurements can be taken at arbitrary temperatures down to about 40 K, as the entire setup is cooled by a mechanical cryocooler. The specific geometry combined with the pneumatic clamping force control system and the steady-state temperature control approach make this a unique apparatus.

Tuttle, James G.↗

MoO3 Cathodes for High-Temperature Lithium Thin-Film Cells

MoO3 has shown promise as a cathode material that can extend the upper limit of operating temperature of rechargeable lithium thin-film electrochemical cells. Cells of this type are undergoing development for use as energy sources in cellular telephones, wireless medical sensors, and other, similarly sized portable electronic products. The LiCoO2 and LiMn2O4 cathodes heretofore used in these cells exhibit outstanding cycle lives (of the order of hundreds of thousands of cycles) at room temperature, but operation at higher temperatures reduces their cycle lives substantially: for example, at a temperature of 150 C, cells containing LiCoO2 cathodes lose half their capacities in 100 charge/discharge cycles. The superiority of MoO3 as a cathode material was demonstrated in experiments on lithium thin-film cells fabricated on glass slides. Each cell included a layer of Ti (for adhesion to the glass slide), a patterned layer of Pt that served as a cathode current collector, a cathode layer of MoO3, a solid electrolyte layer of Li3.3 PO3.8 N0.22 ("LiPON"), and an anode layer of Li. All the layers were deposited by magnetron sputtering except for the Li layer, which was deposited by thermal evaporation. These cells, along with similar ones containing LiCoO2 cathodes, were subjected to several tests, including measurements of specific capacity in charge/discharge cycling at a temperature of 150 C. The results of these measurements, plotted in the figure, showed that whereas specific capacity of the cells containing LiCoO2 cathodes faded to about half its initial value after only 100 cycles, the specific capacity of the cells containing the MoO3 cathodes faded only slightly during the first few hundred cycles and thereafter not only recovered to its initial value but continued to increase up to at least 5,500 cycles.

West, William↗

Thin nearly wireless adaptive optical device

A thin nearly wireless adaptive optical device capable of dynamically modulating the shape of a mirror in real time to compensate for atmospheric distortions and/or variations along an optical material is provided. The device includes an optical layer, a substrate, at least one electronic circuit layer with nearly wireless architecture, an array of actuators, power electronic switches, a reactive force element, and a digital controller. Actuators are aligned so that each axis of expansion and contraction intersects both substrate and reactive force element. Electronics layer with nearly wireless architecture, power electronic switches, and digital controller are provided within a thin-film substrate. The size and weight of the adaptive optical device is solely dominated by the size of the actuator elements rather than by the power distribution system.

Knowles, Gareth J.↗

Electrical Switching of Perovskite Thin-Film Resistors

Electronic devices that exploit electrical switching of physical properties of thin films of perovskite materials (especially colossal magnetoresistive materials) have been invented. Unlike some related prior devices, these devices function at room temperature and do not depend on externally applied magnetic fields. Devices of this type can be designed to function as sensors (exhibiting varying electrical resistance in response to varying temperature, magnetic field, electric field, and/or mechanical pressure) and as elements of electronic memories. The underlying principle is that the application of one or more short electrical pulse(s) can induce a reversible, irreversible, or partly reversible change in the electrical, thermal, mechanical, and magnetic properties of a thin perovskite film. The energy in the pulse must be large enough to induce the desired change but not so large as to destroy the film. Depending on the requirements of a specific application, the pulse(s) can have any of a large variety of waveforms (e.g., square, triangular, or sine) and be of positive, negative, or alternating polarity. In some applications, it could be necessary to use multiple pulses to induce successive incremental physical changes. In one class of applications, electrical pulses of suitable shapes, sizes, and polarities are applied to vary the detection sensitivities of sensors. Another class of applications arises in electronic circuits in which certain resistance values are required to be variable: Incorporating the affected resistors into devices of the present type makes it possible to control their resistances electrically over wide ranges, and the lifetimes of electrically variable resistors exceed those of conventional mechanically variable resistors. Another and potentially the most important class of applications is that of resistance-based nonvolatile-memory devices, such as a resistance random access memory (RRAM) described in the immediately following article, Electrically Variable Resistive Memory Devices (MFS-32511-1).

Liu, Shangqing↗

Fabrication and Testing of a Thin-Film Heat Flux Sensor for a Stirling Convertor

The NASA Glenn Research Center (GRC) has been testing high-efficiency free-piston Stirling convertors for potential use in radioisotope power systems since 1999. Stirling convertors are being operated for many years to demonstrate a radioisotope power system capable of providing reliable power for potential multiyear missions. Techniques used to monitor the convertors for change in performance include measurements of temperature, pressure, energy addition, and energy rejection. Micro-porous bulk insulation is used in the Stirling convertor test setup to minimize the loss of thermal energy from the electric heat source to the environment. The insulation is characterized before extended operation, enabling correlation of the net thermal energy addition to the convertor. Aging micro-porous bulk insulation changes insulation efficiency, introducing errors in the correlation for net thermal energy addition. A thin-film heat flux sensor was designed and fabricated to directly measure the net thermal energy addition to the Stirling convertor. The fabrication techniques include slipcasting and using Physical Vapor Deposition (PVD). One-micron-thick noble metal thermocouples measure temperature on the surface of an alumina ceramic disk and heat flux is calculated. Fabrication, integration, and test results of a thin-film heat flux sensor are presented.

Wilson, Scott D.↗

Hyperspectrally-Resolved Surface Emissivity Derived Under Optically Thin Clouds

Surface spectral emissivity derived from current and future satellites can and will reveal critical information about the Earth s ecosystem and land surface type properties, which can be utilized as a means of long-term monitoring of global environment and climate change. Hyperspectrally-resolved surface emissivities are derived with an algorithm utilizes a combined fast radiative transfer model (RTM) with a molecular RTM and a cloud RTM accounting for both atmospheric absorption and cloud absorption/scattering. Clouds are automatically detected and cloud microphysical parameters are retrieved; and emissivity is retrieved under clear and optically thin cloud conditions. This technique separates surface emissivity from skin temperature by representing the emissivity spectrum with eigenvectors derived from a laboratory measured emissivity database; in other words, using the constraint as a means for the emissivity to vary smoothly across atmospheric absorption lines. Here we present the emissivity derived under optically thin clouds in comparison with that under clear conditions.

Zhou, Daniel K.↗

l/f Noise in the Superconducting Transition of a MgB2 Thin Film

The noise voltage spectral density in the superconducting transition of a MgB2 thin film on a SiN-coated Si thick substrate was measured over the frequency range 1 Hz-to-1 KHz. Using established bolometer noise theory the theoretical noise components due to Johnson, 1/f(excess) and phonon noise are modeled to the measured data. It is shown that for the case of a MgB2 thin film in the vicinity of the mid-point of transition, coupled to a heat sink via a fairly high thermal conductance (approximately equal to 10(sup -1) W/K)) that the measured noise voltage spectrum is 1/f limited and exhibits lit dependence with a varying between 0.3 and 0.5 in the measured frequency range. At a video frame rate frequency of 30 Hz the measured noise voltage density in the film is approximately equal to 61 nV /the square root of HZ, using this value an upper limit of electrical NEP approximately equal to 0.67pW / the square root of Hz is implied for a practical MgB2 bolometer operating at 36.1 K.

Lakew, B.↗

Techniques for Connecting Superconducting Thin Films

Several improved techniques for connecting superconducting thin films on substrates have been developed. The techniques afford some versatility for tailoring the electronic and mechanical characteristics of junctions between superconductors in experimental electronic devices. The techniques are particularly useful for making superconducting or alternatively normally conductive junctions (e.g., Josephson junctions) between patterned superconducting thin films in order to exploit electron quantum-tunneling effects. The techniques are applicable to both low-Tc and high-Tc superconductors (where Tc represents the superconducting- transition temperature of a given material), offering different advantages for each. Most low-Tc superconductors are metallic, and heretofore, connections among them have been made by spot welding. Most high-Tc superconductors are nonmetallic and cannot be spot welded. These techniques offer alternatives to spot welding of most low-Tc superconductors and additional solutions to problems of connecting most high-Tc superconductors.

Mester, John↗

Thickening and Thinning of Antarctic Ice Shelves and Tongues and Mass Balance Estimates

Previous analysis of elevation changes for 1992 to 2002 obtained from measurements by radar altimeters on ERS-l and 2 showed that the shelves in the Antarctic Peninsula (AP) and along the coast of West Antarctica (WA), including the eastern part of the Ross Ice Shelf, were mostly thinning and losing mass whereas the Ronne Ice shelf also in WA was mostly thickening. The estimated total mass loss for the floating ice shelves and ice tongues from ice draining WA and the AP was 95 Gt/a. In contrast, the floating ice shelves and ice tongues from ice draining East Antarctica (EA), including the Filchner, Fimbul, Amery, and Western Ross, were mostly thickening with a total estimated mass gain of 142 Gt/a. Data from ICESat laser altimetry for 2003-2008 gives new surface elevation changes (dH/dt) with some similar values for the earlier and latter periods, including -27.6 and -26.9 cm a-Ion the West Getz ice shelf and -42.4 and - 27.2 cm/a on the East Getz ice shelf, and some values that indicate more thinning in the latter period, including -17.9 and -36.2 cm/a on the Larsen C ice shelf, -35.5 and -76.0 cm/a on the Pine Island Glacier floating, -60.5 and -125.7 .cm/a on the Smith Glacier floating, and -34.4 and -108.9 cm/a on the Thwaites Glacier floating. Maps of measured dH/dt and estimated thickness change are produced along with mass change estimates for 2003 - 2008.

Zwally, H. Jay↗

PVD Silicon Carbide as a Thin Film Packaging Technology for Antennas on LCP Substrates for Harsh Environments

This paper describes an effort to develop a thin film packaging technology for microfabricated planar antennas on polymeric substrates based on silicon carbide (SiC) films deposited by physical vapor deposition (PVD). The antennas are coplanar waveguide fed dual frequency folded slot antennas fabricated on liquid crystal polymer (LCP) substrates. The PVD SiC thin films were deposited directly onto the antennas by RF sputtering at room temperature at a chamber pressure of 30 mTorr and a power level of 300 W. The SiC film thickness is 450 nm. The return loss and radiation patterns were measured before and after the SiC-coated antennas were submerged into perchloric acid for 1 hour. No degradation in RF performance or physical integrity of the antenna was observed.

Scardelletti, Maximilian C.↗