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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,315 records · Page 73
All sourcesNASA NTRSDOE OSTI
NASA NTRS1979

The Si ribbon crystal for the solar battery using the horizontal pull method

A method utilizing a device to spray noble gases to cool the site of silicon crystal growth is described. The salient points are: (1) soft and uniform cooling was possible, (2) the length of the boundary surface of growth along the growth direction was made long over a wide width compared to the thickness, and (3) this made it possible to effectively remove the heat produced from solification. By using forced gas spraying on the solution surface in contact with the points of crystal growth, growth at the points of growth is enhanced and the rate of growth is speeded up.

Norifuji, H.↗
NASA NTRS1980

Analysis of GaAs and Si solar cell arrays for earth orbital and orbit transfer missions

Silicon and gallium arsenide arrays were studied and compared for low earth orbit (LE), geosynchronous orbit (GEO), and LEO to GEO electric propulsion orbit transfer missions. The sensitivities of total cost to parameters such as mission duration, array cost, cover glass thickness, and concentration ratio were determined along with cost tradeoffs between silicon and gallium arsenide arrays for selected mission classes. Results indicate that development of the technology for low cost, light weight concentrators should be increased and that cost reduction efforts for gallium arsenide cells be pursued.

Jeffries, K. D.↗
NASA NTRS1980

Conceptual design study of concentrator enhanced solar arrays for space applications. 2kW Si and GaAs systems at 1 AU

The effect of concentration level on the specific power for a deployable, thin, gallium arsenide cell array in geosynchronous orbit for 10 years in conjunction with a two dimensional flat plate trough concentrator (V trough) and also with a multiple flat plate concentrator was investigated as well as the effects for a conventional silicon cell array on a rigid substrate. For application to a thin GaAs array at 1 AU for 10 years, the V trough produces a 19% benefit in specific power and a dramatic reduction in array area, while the multiple flat plate collector design is not only of no benefit, but is a considerable detriment. The benefit it achieves by reducing array area is duplicated by the 2D design. For the silicon array on a rigid substrate, improvement in performance due to a concentrator with ordinary mirror coating is quite small: 9% increase in specific power, and 13% reduction in array area. When the concentrator mirrors are coated with an improved cold mirror coating, somewhat more significant results are obtained: 31% specific power improvement; and 27% area reduction. In both cases, a 10 year exposure reduces BOL output by 23%.

Source record↗
NASA NTRS1980

Melting relations and elemental distribution of portion of the system Fe-S-Si-O to 32 KB with planetary application

The melting relations and distribution of K and Cs in portions of the system was determined at high pressures. Ferrosilite is stable as a primary phase at high pressures because of the incongruent melting of ferrosilite to quartz plus liquid and the boundary between the one and two liquid fields on the joint Fe(1-x) O-FeS-SiO2 shifts away from silica with increasing pressures. Potassium K was found to have limited solubility in metal sulfide liquids at pressures up to 45 kb. The speculation that K may dissolve significantly in metal-metal sulfide liquids after undergoing first order isomorphic transition was tested by determining the distribution of Cs between sulfide and silicate liquids as an analogy to K. At 45 kb, 1400 C and 27 kb, 1300 C only limited amounts of Cs were detected in quench sulfide liquids even at pressures beyond the isomorphic transition of Cs.

Huang, W. L.↗
NASA NTRS1980

Conceptual design study of concentrator enhanced solar arrays for space applications. Performance evaluation of 5 KW and 20 KW systems in Si and GaAs at 1 AU employing a flat plate trough concentrator

A simple, efficient and very lightweight preliminary design for a 5 KW and 20 KW BOL output concentrated array evolved and is described by drawings. The relative effectiveness of this design, as compared to an unconcentrated planar array of equal power output, was measured by comparing power to mass performance of and the solar cell area required by each. Improvements in power to mass performance as high as 42% together with array area size reduction of 57% are possible in GaAs systems. By contrast, when the same concentrator design is applied to silicon systems, no improvement in power to mass can be obtained although array area reductions as high as 35% are obtainable.

Source record↗
NASA NTRS1983

Si:Bi switched photoconducttor infrared detector array

A multiplexed infrared detector array is described. The small demonstration prototype consisted of two cryogenically cooled, bismuth doped silicon, extrinsic photoconductor pixels multiplexed onto a single output channel using an on focal plane switch integration sampling technique. Noise levels of the order of 400 to 600 rms electrons per sample were demonstrated for this chip and wire hybrid version.

Eakin, C. E.↗
NASA NTRS1983

Techniques for improving the Si-SiO2 interface characterization

The two techniques which have provided most of the information on interface states in MIS-C (metal-insulator-semiconductor-capacitor) structures are the 'quasi-static method' and the 'conductance method'. Sher et al. (1979) and Su et al. (1980) have suggested a number of improvements concerning these methods. The present investigation has the objective to extend the earlier results and to offer a new tentative interpretation of the data. A critical review is conducted of the data collection and reduction techniques for the quasi-static method, taking into account the sample, the quasi-static capacitance, and the surface potential. In connection with a discussion of the conductance method, attention is given to parallel conductance and capacitance measurements, interface-state densities, time constants, and measurements on a (110) surface orientation.

Sher, A.↗
NASA NTRS1984

Radial SI latches vibration test data review

Dynamic testing of the Space Telescope Scientific Instrument Radial Latches was performed as specified by the designated test criteria. No structural failures were observed during the test. The alignment stability of the instrument simulator was within required tolerances after testing. Particulates were discovered around the latch bases, after testing, due to wearing at the B and C latch interface surfaces. This report covers criteria derivation, testing, and test results.

Harrison, P. M.↗
NASA NTRS1984

The friction behavior of semiconductors Si and GaAs in contact with pure metals

The friction behavior of the semiconductors silicon and gallium arsenide in contact with pure metals was studied. Five transition and two nontransition metals, titanium, tantalum, nickel, palladium, platinum, copper, and silver, slid on a single crystal silicon (111) surface. Four metals, indium, nickel, copper and silver, slid on a single crystal gallium arsenide (100) surface. Experiments were conducted in room air and in a vacuum of 10 to the minus 7th power N/sq cm (10 to the minus 9th power torr). The results indicate that the sliding of silicon on the transition metals exhibits relatively higher friction than for the nontransition metals in contact with silicon. There is a clear correlation between friction and Schottky barrier height formed at the metal silicon interface for the transition metals. Transition metals with a higher barrier height on silicon had a lower friction. The same effect of barrier height was found for the friction of gallium arsenide in contact with metals.

Mishina, H.↗
NASA NTRS1984

Carbides in iron-rich Fe-Mn-Cr-Mo-Al-Si-C systems

The optimization of high carbon iron-base superalloy properties with duplex microstructure gamma + M7C3 carbide requires analysis in the context of a seven-component system. Data are first provided here for the Fe-Mn-Cr-Mo-C quinary system, at 30 at. pct carbon. A characterization of competing carbides, according to a pseudoternary phase diagram at 35 wt pct iron, is made from isothermal sections. It is noted that while M7C3 and M3C carbides' occurrences are respectively favored at the Cr and Mn corners, the M2C carbide and molybdenum cementite are predominant with increasing amounts of Mo. Lattice parameters are reported for the various carbides.

Lemkey, F. D.↗
NASA NTRS1984

Detection of narrow C 4 and Si 4 absorption features in spectra of stars within 200 pc f the Sun

Detection of narrow (Beta lambda 0.5 A) absorption features in C 4 at lambda lambda 1548 and 1550 have been made in the spectra of 4 late B dwarfs within 200 pc of the Sun; the Si4 doublet at lambda lambda 1393 and 1403 shows up in two of them. It is argued that it is difficult to account for the strengths, widths, shapes, and C IV/Si IV ratios in terms consistent with a circumstellar origin except possibly for an asymmetric C IV component in one star (HD 185037). The most probable source is semi-torrid gas in the 50,000 K range forming the interfaces between cooler H 1 clouds and the ambient medium at coronal temperatures. Late B rapid rotators are used for local interstellar medium probing of this kind.

Molaro, P.↗
NASA NTRS1983

Silicon superlattices. 2: Si-Ge heterostructures and MOS systems

Five main areas were examined: (1) the valence-and conduction-band-edge electronic structure of the thin layer ( 11 A) silicon-superlattice systems; (2) extension of thin-layer calculations to layers of thickness 11 A, where most potential experimental interest lies; (3) the electronic structure of thicker-layer (11 to 110 A) silicon superlattices; (4) preliminary calculations of impurity-scattering-limited electron mobility in the thicker-layer superlattices; and (5) production of the fine metal lines that would be required to produce on MOS superlattice.

Moriarty, J. A.↗
NASA NTRS1985

The mean ionic charges of N, Ne, MG, SI and S in solar energetic particle events

The mean ionic charges of nitrogen, neon, magnesium, silicon, and sulfur in solar flare particle events were determined for 12 flares during the time interval from September 1978 to September 1979. The observations were carried out with the MPI/UoMd ULEZEQ Sensor on the ISEE-3 satellite comparing the results with mean charge states established in a hot coronal plasma under equilibrium conditions, different temperatures for different elements are discussed. These range from approx. 2 million K to 7 million K in a single flare. From flare to flare the variation in temperature for each element is less than the variation between different ion species.

Luhn, A.↗