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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Web base material is being improved with a goal toward obtaining solar cell efficiencies in excess of 18% (AM1). Carrier loss mechanisms in web silicon was investigated, techniques were developed to reduce carrier recombination in the web, and web cells were fabricated using effective surface passivation. The effect of stress on web cell performance was also investigated.
The frequency dependence of the winter anomaly (WA) of radio wave absorption indicates the altitude range where the considered seasonal variation of absorption, L, takes place: 75-95 km. In this height region considerable seasonal variations of ionic composition and effective recombination coefficient, alpha sub e, exist, which can cause seasonal variations of electron concentration, N, and absorption, L. An attempt to render a qualitative estimation of the normal WA, i.e., the increased ratio of winter over summer absorption, L sub w/L sub s, at medium latitudes 40 deg and 50 deg, for solar zenith angles CHi = 60 deg and 75 deg is made. This is compared with existing experimental data.
Equations are presented for the surface-slip (or jump) values of species concentration, pressure, velocity, and temperature in the low-Reynolds number, high-altitude flight regime of a space vehicle. The equations are obtained from closed form solutions of the mass, momentum, and energy flux equations using the Chapman-Enskog velocity distribution function. This function represents a solution of the Boltzmann equation in the Navier-Stokes approximation. The analysis, obtained for nonequilibrium multicomponent air flow, includes the finite-rate surface catalytic recombination and changes in the internal energy during reflection from the surface. Expressions for the various slip quantities were obtained in a form which can be employed in flowfield computations. A consistent set of equations is provided for multicomponent, binary, and single species mixtures. Expression is also provided for the finite-rate, species-concentration boundary condition for a multicomponent mixture in absence of slip.
A steady state model that describes the internal charge distribution of a planar dielectric sample exposed to a uniform electron beam was developed. The model includes the effects of charge deposition and ionization of the beam, separate trap-modulated mobilities for electrons and holes, electron-hole recombination, and pair production by drifting thermal electrons. If the incident beam current is greater than a certain critical value (which depends on sample thickness as well as other sample properties), the steady state solution is non-physical.
A design for silicon solar cells was investigated as an approach to increasing the cell open-circuit voltage and efficiency for flat-plate terrestrial photovoltaic applications. This deviates from past designs, where either the entire front surface of the cell is covered by a planar junction or the surface is textured before junction formation, which results in an even greater (up to 70%) junction area. The heavily doped front region and the junction space charge region are potential areas of high recombination for generated and injected minority carriers. The design presented reduces junction area by spreading equidiameter dot junctions across the surface of the cell, spaced about a diffusion length or less from each other. Various dot diameters and spacings allowed variations in total junction area. A simplified analysis was done to obtain a first-order design optimization. Efficiencies of up to 19% can be obtained. Cell fabrication involved extra masking steps for selective junction diffusion, and made surface passivation a key element in obtaining good collection. It also involved photolithography, with line widths down to microns. A method is demonstrated for achieving potentially high open-circuit voltages and solar-cell efficiencies.
This report develops a basis for the design of a catalyst bed for the recombination of CO and O2 in a closed-cycle CO2 laser system. The catalyst is 1% Pt on SnO2 having a BET surface area of 6.7 sq m/g and a specific void volume of 0.374 cu cm/g. The design conditions are: a catalyst bed temperature of 100 C and a circulating flow rate of 10 lambda/min. Under these conditions, the required quantity of catalyst for prolonged laser operation of 668g. The rat law for the reaction of a stoichiometric mixture of 1% CO + 1/2% O2 in helium was determined to be overall first order; however, additional experiments with non-stoichiometric gas mixtures of CO and O2 are needed to determine the order of the CO concentration and the order of the O2 concentration in the rate law.
The use of Sin sub x grown by plasma enhanced chemical vapor deposition (PECVO) for passivating silicon surfaces was studied. The application of PECVO SiN sub x films for passivations of silicon N+/P or P+/N solar cells is of particular interest. This program has involved the following areas of investigation: (1) Establishment of PECVO system and development of procedures for growth of SiN sub x; (2) Optical characterization of SiN sub x films; (3) Characterization of the SiN sub x/Si interface; (4) Surface recombination velocity deduced from photoresponse; (5) Current-Voltage analyses of silicon N+/P cells; and (6) Gated diode device studies.
Results of hydrogen-passivated polycrystalline silicon solar cells are summarized. Very small grain or short minority-carrier diffusion length silicon was used. Hydrogenated solar cells fabricated from this material appear to have effective minority-carrier diffusion lengths that are still not very long, as shown by the open-circuit voltages of passivated cells that are still significantly less than those of single-crystal solar cells. The short-circuit current of solar cells fabricated from large-grain cast polycrystalline silicon is nearly equivalent to that of single-crystal cells, which indicates long bulk minority-carrier diffusion length. However, the open-circuit voltage, which is sensitive to grain boundary recombination, is sometimes 20 to 40 mV less. The goal was to minimize variations in open-circuit voltage and fill-factor caused by defects by passivating these defects using a hydrogenation process. Treatments with molecular hydrogen showed no effect on large-grain cast polycrystaline silicon solar cells.
Advanced designs for individual pressure vessel nickel hydrogen cells were conceived which should improve the life cycle at deep depths of discharge and improve thermal management. Features of the designs which are new and not incorporated in either of the contemporary cells (Air Force/Hughes, Comsat) are: (1) the use of alternate methods of oxygen recombination, (2) use of serrated edge separators to facilitate movement of gas within the cell while still maintaining required physical contact with the wall wick, and (3) use of an expandable stack to accommodate some of the nickel electrode expansion. The designs also consider electrolyte volume requirements over the life of the cells, and are fully compatible with the Air Force/Hughes design.
The initial design for the NASA-Lewis advanced nickel-hydrogen battery is discussed. Fabrication of two 10-cell boilerplate battery stacks will soon begin. The test batteries will undergo characterization testing and low Earth orbit life cycling. The design effectively deals with waste heat generated in the cell stack. Stack temperatures and temperature gradients are maintained to acceptable limits by utilizing the bipolar conduction plate as a heat path to the active cooling fluid panel external to the edge of the cell stack. The thermal design and mechanical design of the battery stack together maintain a materials balance within the cell. An electrolyte seal on each cell frame prohibits electrolyte bridging. An oxygen recombination site and electrolyte reservoir/separator design does not allow oxygen to leave the cell in which it was generated.
Advanced designs for individual pressure vessel nickel hydrogen cells were conceived which should improve the life cycle at deep depths of discharge and improve thermal management. Features of the designs which are new and not incorporated in either of the contemporary cells (Air Force/Hughes, Comsat) are: (1) the use of alternate methods of oxygen recombination, (2) use of serrated edge separators to facilitate movement of gas within the cell while still maintaining required physical contact with the wall wick, and (3) use of an expandable stack to accommodate some of the nickel electrode expansion. The designs also consider electrolyte volume requirements over the life of the cells, and are fully compatible with the Air Force/Hughes design.
The best lifetimes attained for bulk crytalline silicon as a function of doping concentrations are analyzed. It is assumed that the dopants which set the Fermi level do not contribute to the recombination traffic which is due to the unknown defect. This defect is assumed to have two charge states: neutral and negative, the neutral defect concentration is frozen-in at some temperature T sub f. The higher doping concentrations should include the band-band Auger effect by using a generalization of the Shockley-Read-Hall (SRH) mechanism. The generalization of the SRH mechanism is discussed. This formulation gives a straightforward procedure for incorporating both band-band and band-trap Auger effects in the SRH procedure. Two related questions arise in this context: (1) it may sometimes be useful to write the steady-state occupation probability of the traps implied by SRH procedure in a form which approximates to the Fermi-Dirac distribution; and (2) the effect on the SRH mechanism of spreading N sub t levels at one energy uniformly over a range of energies is discussed.
The back contact can detract from solar cell performance in a number of ways: high recombination, barrier, photovoltaic, minority carrier collection, resistance. These effects may act in a nonuniform fashion over the cell area, and complicate the analysis of photovoltaic performance aimed at a better understanding of the effects of device geometry and material and/or processing parameters. The back contact is tested by reproducing it on both sides of a substrate. The objective is to find a back contact which performs well as a back contact, can be applied cheaply to large area solar cells, fits well into a practical process sequence, does not introduce structural damage or undesirable impurities into the silicon substrate, is compatible with an effective front contact technology, permits low temperature solder contacting, adheres well to silicon, and is reliable.
The basic photovoltaic properties of a given crystalline silicon specimen seem to be governed by density and nature of two to three dimensional lattice defects. These are mainly generated by primary growth conditions as grain boundaries of more or less intrinsic character or second phase precipitates from supersaturated solutions of carbon or oxygen. Considerably high values of both solubility and diffusivity in connection with their abundance in common refractory material systems account for the predominance of the two particular elements. Unsaturated dislocations of different types very often can be seen as a consequence of the existence of more dimensional defects as described initially. The final performance of a solar cell is dependent of the concentration and distribution of recombination active centers in the different regions of this device. Typical representatives are fast diffusing transition metals in form of either single atoms or simple complexes. Their avoidance, annihilation, or removal is of great concern in different fields of electronic materials development.
As a general qualitative tool, the electron beam induced current (EBIC) method can be very useful in imaging recombination in silicon sheet used for solar cells. Work using EBIC on EFG silicon ribbon is described. In particular, some efforts at making the technique more quantitative and hence more useful, some limitations of the method, and finally specific application to hydrogen passivation is treated. Some brief remarks are made regarding the technique itself.
A computer simulation method is discussed that provides for equivalent simulation accuracy, but that exhibits significantly lower CPU running time per bias point compared to other techniques. This new method is applied to a mesh point field as is customary in numerical integration (NI) techniques. The assumption of a linear approximation for the dependent variable, which is typically used in the finite difference and finite element NI methods, is not required. Instead, the set of device transport equations is applied to, and the closed-form solutions obtained for, each mesh point. The mesh point field is generated so that the coefficients in the set of transport equations exhibit small changes between adjacent mesh points. Application of this method to high-efficiency silicon solar cells is described; and the method by which Auger recombination, ambipolar considerations, built-in and induced electric fields, bandgap narrowing, carrier confinement, and carrier diffusivities are treated. Bandgap narrowing has been investigated using Fermi-Dirac statistics, and these results show that bandgap narrowing is more pronounced and that it is temperature-dependent in contrast to the results based on Boltzmann statistics.
Large area (100 sq cm) polysilicon solar cells having efficiencies of up to 14.1% (100 mW/sq cm, 25 C) were fabricated and a detailed analysis was performed to identify the efficiency loss mechanisms. The 1-5 characteristics of the best cell were dominated by recombination in the quasi-neutral base due to the combination of minority carrier diffusion length and base resistivity. An analysis of the microstructural defects present in the material and their effect on the electrical properties is presented.
An outline is given listing the speeches given in each session and the pertinent points is some speeches. There were six session, besides the overview session they were: (1) high efficiency concepts; (2) surface/interface effects; (3) bulk effects; (4) modeling; and (5) high efficiency device processing. Besides the emphasis placed on increasing efficiency of energy conversion, a great amount of discussion was spent on ways to reduce recombination and reducing surface defects.