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At least 1,315 records · Page 73
All sourcesNASA NTRSDOE OSTI
NASA NTRS1982

An EBIC study of HEM polycrystalline silicon

Low-cost silicon for solar cells grown by the heat exchanger method (HEM) was studied in the electron beam induced current (EBIC) mode of a scanning electron microscope (SEM). Comparisons were made between the defects observed optically and the recombination centers visible in EBIC. Much of the HEM material was single crystalline, but structural defects were found from areas near the corners of the grown material. Most of these defects consisted of linear twin boundaries and grain boundaries. The electrical activity of these boundaries was dependent on symmetry of the boundaries. Symmetric twin boundaries did not exhibit recombination activity while unsymmetric twin boundaries were electrically active.

Koch, T.↗
NASA NTRS1982

The ionization equilibrium of astrophysically abundant elements

The paper presents new calculations of ionization equilibrium fractions of 11 abundant elements (C, N, O, Ne, Mg, Si, S, Ar, Ca, Fe, Ni) as functions of temperature. Convenient coefficients for fitting the rates of collisional ionization, radiative recombination, and dielectronic recombination are also tabulated. Many of the ionization rates are based on recent experimental measurements of cross sections for collisional ionization and autoionization following inner-shell excitation. These rates are used elsewhere in computations of nonequilibrium ionization, radiative cooling, radiative shock models, and plasma emission diagnostics.

Shull, J. M.↗
NASA NTRS1982

Reduction of solar cell efficiency by bulk defects across the back-surface-field junction

The degradation of solar cell performance due to bulk defects distributed across the back-surface field junction is analyzed in terms of a three-region developed-perimeter model. Families of curves are computed and their physical significance is discussed in detail with reference to three parameters used to characterize the defects: defect area, defect density, and defect surface recombination velocity. A reduction in the open-circuit voltage due to the presence of a defect is expressed as a function of the defect area, density, cell thickness, and defect surface recombination velocity. Numerical examples are presented to illustrate the importance of the particular defect parameters.

Sah, C. T.↗
NASA NTRS1982

The energetic molecular outflow near AFGL 961 - Millimeter-wave and infrared observations

Sensitive millimeter-wave C-12O line observations and near-infrared hydrogen recombination line observations of AFGL 961 are reported and analyzed. The observations show that the high-velocity flow has a maximum extent of at least six arcmin or 1.9 pc at the distance of AFGL 961. The flow is anisotropic and the emission profiles are asymmetric in velocity. The mass of the gas involved in the flow is determined to be approximately 19 solar masses, and the kinetic energy of this gas is estimated to be about 8 x 10 to the 46th ergs. These observations are interpreted as evidence that an energetic bipolar outflow of molecular gas is occurring near AFGL 961. Comparison of infrared recombination line data, radio continuum, and CO observations shows that a strong, ionized, stellar wind would not be a sufficient force to drive the outflow. The effects of the outflow on the surrounding molecular cloud was also investigated.

Lada, C. J.↗
NASA NTRS1982

Thickness dependences of solar cell performance

The significance of including factors such as the base resistivity loss for solar cells thicker than 100 microns and emitter and BSF layer recombination for thin cells in predicting the fill factor and efficiency of solar cells is demonstrated analytically. A model for a solar cell is devised with the inclusion of the dopant impurity concentration profile, variation of the electron and hole mobility with dopant concentration, the concentration and thermal capture and emission rates of the recombination center, device temperature, the AM1 spectra and the Si absorption coefficient. Device equations were solved by means of the transmission line technique. The analytical results were compared with those of low-level theory for cell performance. Significant differences in predictions of the fill factor resulted, and inaccuracies in the low-level approximations are discussed.

Sah, C. T.↗
NASA NTRS1982

Determination of optimum sunlight concentration level in space for 3-5 cascade solar cells

Current-voltage curves were calculated for each cell in a cascade structure using a solar cell diode equation and superposition. Terms for the light generated current, diffusion current, space charge recombination current and series and shunt resistance are included. Individual current voltage curves are added in series with ohmic resistance losses for the cell interconnects to obtain the cascade cell performance. Temperature was varied with concentration, using several models, and ranged from 55 C at one Sun to between 80 and 200 C at 100 Suns. A variety of series resistance and internal resistances were used. Coefficients of the diffusion and recombination terms are strongly temperature dependent. The study indicates that maximum efficiency (30%) occurs in the 50 to 100X Sun concentration range, provided series resistance is below 0.015 ohm-sq cm and cell temperature is 80 C at 100 Suns.

Curtis, H. B.↗
NASA NTRS1982

Defects and annealing studies in 1-Me electron irradiated (AlGa)As-GaAs solar cells

The deep-level defects and recombination mechanisms in the one-MeV electron irradiated (AlGa)As-GaAs solar cells under various irradiation and annealing conditions are discussed. Deep-level transient spectroscopy (DLTS) and capacitance-voltage (CV) techniques were used to determine the defect and recombination parameters such as energy levels and defect density, carrier capture cross sections and lifetimes for both electron and hole traps as well as hole diffusion lengths in these electron irradiated GaAs solar cells. GaAs solar cells used in this study were prepared by the infinite solution melt liquid phase epitaxial (LPE) technique at Hughes Research Lab., with (Al0.9Ga0.1)-As window layer, Be-diffused p-GaAs layer on Sn-doped n-GaAs or undoped n-GaAs active layer grown on n(+)-GaAs substrate. Mesa structure with area of 5.86x1000 sq cm was fabricated. Three different irradiation and annealing experiments were performed on these solar cells.

Li, S. S.↗
NASA NTRS1983

Solar-simulator-pumped atomic iodine laser kinetics

The literature contains broad ranges of disagreement in kinetic data for the atomic iodine laser. A kinetic model of a solar-simulator-pumped iodine laser is used to select those kinetic data consistent with recent laser experiments at the Langley Research Center. Analysis of the solar-simulator-pumped laser experiments resulted in the following estimates of rate coefficients: for alkyl radical (n-C3F7) and atomic iodine (I) recombination, 4.3 x 10 to the 11th power (1.9) + or - cu cm/s; for n-C3F7I stabilized atomic iodine recombination (I + I) 3.7 x 10 to the -32nd power (2.3) + or -1 cm to the 6th power/s; and for molecular iodine (I2) quenching, 3.1 x 10 to the -11th power (1.6) + or - 1 cu cm/s. These rates are consistent with the recent measurements.

Wilson, H. W.↗
NASA NTRS1982

Coordinated airborne and satellite measurements of equatorial plasma depletions

A series of experiments conducted in December 1979 to investigate the structure of plasma depletions in the low latitude, nighttime ionosphere is discussed. Density biteouts of about one order of magnitude in the dominant ion, O(+), are mapped to lower altitudes along magnetic field lines for comparison with 6300-A and 7774-A O I airglow depletions. Owing to the different airglow production mechanisms (dissociative recombination of O2(+) for 6300 A and radiative recombination of O(+) for 7774 A), the 6300-A depletions reflect plasma depletions near the bottomside of the F layer, while those at 7774 A are located near the peak of the layer. The O(+) biteouts map directly into the 7774-A airglow depletions in the same hemisphere and also when traced into the opposite hemisphere, which suggests magnetic flux tube alignment over north-south distances of approximately 2220 km. The 6300-A (bottomside) depletions are found to be wider in longitude than the 7774-A (F-peak) depeletions near the equatorward edge of the Appleton anomaly.

Weber, E. J.↗
NASA NTRS1983

Characterization of grain boundaries in silicon

Zero-bias conductance and capacitance measurements at various temperatures were used to study trapped charges and potential barrier height at the boundaries. Deep-level transient spectroscopy (DLTS) was applied to measure the density of states at the boundary. A study of photoconductivity of grain boundaries in p-type silicon demonstrated the applicability of the technique in the measurement of minority carrier recombination velocity at the grain boundary. Enhanced diffusion of phosphorus at grain boundaries in three cast polycrystalline photovoltaic materials was studied. Enhancements for the three were the same, indicating that the properties of boundaries are similar, although grown by different techniques. Grain boundaries capable of enhancing the diffusion were found always to have strong recombination activities; the phenomena could be related to dangling bonds at the boundaries. Evidence that incoherent second-order twins of (111)/(115) type are diffusion-active is presented.

Cheng, L. J.↗
NASA NTRS1984

Electron-beam induced current characterization of back-surface field solar cells using a chopped scanning electron microscope beam

A chopped electron beam induced current (EBIC) technique for the chacterization of back-surface field (BSF) solar cells is presented. It is shown that the effective recombination velocity of the low-high junction forming the back-surface field of BSF cells, in addition to the diffusion length and the surface recombination velocity of the surface perpendicular to both the p-n and low-high junctions, can be determined from the data provided by a single EBIC scan. The method for doing so is described and illustrated. Certain experimental considerations taken to enhance the quality of the EBIC data are also discussed.

Luke, K. L.↗
NASA NTRS1984

A theoretical study of the effects of interacting grain boundaries on electron-beam-induced currents

The influence of several grain boundaries on the electron-beam-induced current in polycrystalline silicon is investigated. The simple geometry contemplated here, consisting of two plane parallel grain boundaries possessing different effective, albeit constant, surface recombination velocities, intersecting a planar junction at right angles allows for an exact solution of the corresponding boundary value problem. It is shown that if the distance between the grain boundaries w becomes less than the diffusion length for minority carriers L within the grain, the grain boundary with the smaller effective recombination velocity becomes less and less visible the smaller the ratio w/L.

Luke, K. L.↗
NASA NTRS1984

Non-catalytic surfaces for metallic heat shields

The magnitude of the atom recombination coefficients needed for metal heat shield surfaces on Shuttle-type vehicles is analyzed and discussed. Prior work which identifies surfaces having low catalytic activity is reviewed. Arc tunnel tests to evaluate catalytic activity are described and the difficulties of such tests are discussed. Results are presented which show major differences between atom recombination and atom exchange from molecules. Results of surface analysis show that bulk and surface composition of a coating are different.

Swann, R. T.↗
NASA NTRS1984

Reheating the intergalactic medium under extremal conditions

Sherman (1982) commenced the investigation of a hypothetical closure density intergalactic medium (IGM) in the recombination epoch and found present acceptable temperatures in the range from 160,000 to 4,200,000 K for IGM heating. The present investigation has the objective to complete these calculations by finding extreme bounds on the reheating epoch which preceded recombination. The final results are presented in a table. Three models have been generated. The presented models suggest that a closure density IGM is constrained to be heated by a source in the range from 10 to the -31st to 10 to the -27th ergs per s per cu cm. The heating had to originate no earlier than z approximately 28.

Sherman, R. D.↗
NASA NTRS1984

Surface and allied studies in silicon solar cells

Measuring small-signal admittance versus frequency and forward bias voltage together with a new transient measurement apparently provides the most reliable and flexible method available for determining back surface recombination velocity and low-injection lifetime of the quasineutral base region of silicon solar cells. The new transient measurement reported here is called short-circuit-current decay (SCCD). In this method, forward voltage equal to about the open-circuit or the maximum power voltage establishes excess holes and electrons in the junction transition region and in the quasineutral regions. The sudden application of a short circuit causes an exiting of the excess holes and electrons in the transition region within about ten picoseconds. From observing the slope and intercept of the subsequent current decay, the base lifetime and surface recombination velocity can be determined. The admittance measurement previously mentioned then enters to increase accuracy particularly for devices for which the diffusion length exceeds the base thickness.

Lindholm, F. A.↗
NASA NTRS1984

Surface and allied studies in silicon solar cells

Significant improvements were made in the short-circuit current-decay method of measuring the recombination lifetime tau and the back surface recombination velocity S of the quasineutral base of silicon solar cells. The improvements include a circuit implementation that increases the speed of switching from the forward-voltage to the short-circuit conditions. They also include a supplementation of this method by some newly developed techniques employing small-signal admittance as a function of frequency omega. This supplementation is highly effective for determining tau for cases in which the diffusion length L greatly exceeds the base thickness W. Representative results on different solar cells are reported. Some advances made in the understanding of passivation provided by the polysilicon/silicon heterojunction are outlined. Recent measurements demonstrate that S 10,000 cm/s derive from this method of passivation.

Lindholm, F. A.↗
NASA NTRS1985

Silicon MINP solar cells

The MINP solar cell concept refers to a cell structure designed to be a base region dominated device. Thus, it is desirable that recombination losses are reduced to the point that they occur only in the base region. The most unique feature of the MINP cell design is that a tunneling contact is utilized for the metallic contact on the front surface. The areas under the collector grid and bus bar are passivated by a thin oxide of tunneling thickness. Efforts must also be taken to minimize recombination at the surface between grid lines, at the junction periphery and within the emitter. Results of both theoretical and experimental studies of silicon MINP cells are given. Performance calculations are described which give expected efficiencies as a function of base resistivity and junction depth. Fabrication and characterization of cells are discussed which are based on 0.2 ohm-cm substrates, diffused emitters on the order of 0.15 to 0.20 microns deep, and with Mg MIS collector grids. A total area AM 1 efficiency of 16.8% was achieved. Detailed analyses of photocurrent and current loss mechanisms are presented and utilized to discuss future directions of research. Finally, results reported by other workers are discussed.

Olsen, L. C.↗
NASA NTRS1985

Measurement of electrical parameters and current components in the bulk of silicon solar cells

A review and illustration of electrical measurements for determination of the bulk parameters in silicon solar cells is given. The presentation concentrates on transient and small signal admittance measurements. These measurements yield accurate and reliable values of the base lifetime and the surface recombination velocity at the back contract without inaccuracies that normally results from electrons and holes in the p/n junction space charge region. This then allows the determination of the recombination current in each region of the cell. As an example, current components in the emitter, low doped base, high doped base and junction space charge region of the back surface field cell are obtained. Such analysis is essential in determining the relative importance of the base and the emitter and, thus, the region that limits the cell efficiency.

Neugroschel, A.↗