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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,315 records · Page 73
All sourcesNASA NTRSDOE OSTI
NASA NTRS1971

Development of reverse biased p-n junction electron emission

A cold cathode emitter of hot electrons for use as a source of electrons in vacuum gauges and mass spectrometers was developed using standard Norton electroluminescent silicon carbide p-n diodes operated under reverse bias conditions. Continued development including variations in the geometry of these emitters was carried out such that emitters with an emission efficiency (emitted current/junction current) as high as 3 x 10-0.00001 were obtained. Pulse measurements of the diode characteristics were made and showed that higher efficiency can be attained under pulse conditions probably due to the resulting lower temperatures resulting from such operation.

Fowler, P.↗
NASA NTRS1982

Grown-in defects and defects produced by 1-Me electron irradiated in Al0.3Ga0.7As P-N junction solar cells

Studies of grown-in defects and defects produced by the one-MeV electron irradiation in Al sub 0.3 Ga sub 0.7As p-n junction solar cells fabricated by liquid phase epitaxial (LPE) technique were made for the unirradiated and one-MeV electron irradiated samples, using DLTS and C-V methods. Defect and recombination parameters such as energy level, defect density, carrier capture cross sections and lifetimes were determined for various growth, annealing, and irradiation conditions.

Li, S. S.↗
NASA NTRS1983

Interface states and internal photoemission in p-type GaAs metal-oxide-semiconductor surfaces

An interface photodischarge study of p-type GaAs metal-oxide-semiconductor (MOS) structures revealed the presence of deep interface states and shallow donors and acceptors which were previously observed in n-type GaAs MOS through sub-band-gap photoionization transitions. For higher photon energies, internal photoemission was observed, i.e., injection of electrons to the conduction band of the oxide from either the metal (Au) or from the GaAs valence band; the threshold energies were found to be 3.25 and 3.7 + or - 0.1 eV, respectively. The measured photoemission current exhibited a thermal activation energy of about 0.06 eV, which is consistent with a hopping mechanism of electron transport in the oxide.

Kashkarov, P. K.↗
NASA NTRS1984

Defect studies in one MeV electron irradiated GaAs and in Al/sub x Ga/sub l-x As P-N junction solar cells

Deep level transient spectroscopy reveals that the main electron traps for one-MeV electron irradiated GaAs cells are E9c)-0.31, E(c)-0.90 eV, and the main hole trap is due to the level. Electron trap density was found to vary from 3/tens-trillion ccm for 2/one quadrillion cm 3/3.7 quadrillion cm for 21 sextillion cm electron fluence for electron fluence; a similar result was also obtained for the hole trap density. As for the grown-in defects in the Al(x)Ga(1-x)As p-n junciton cells, only two electron traps with energies of E(c)-0.20 and E(c)-0.34 eV were observed in samples with x = 0.17, and none was found for x 0.05. Auger analysis on the Al(x)Ga(1-x) As window layer of the GaAs solar cell showed a large amount of oxygen and carbon contaminants near the surface of the AlGaAs epilayer. Thermal annealing experiment performed at 250 C for up to 100 min. showed a reduction in the density of both electron traps.

Li, S. S.↗
NASA NTRS1982

Photovoltaic characteristics of diffused P/+N bulk GaAs solar cells

The photovoltaic characteristics of P(+)N junction solar cells fabricated on bulk GaAs by an open tube diffusion technique are described in this paper.Spectral response measurements were analyzed in detail and compared to a computer simulation in order to determine important material parameters. It is projected that proper optimization of the cell parameters can increase the efficiency of the cells from 12.2 percent to close to 20 percent.

Borrego, J. M.↗
NASA NTRS1985

Stable polymeric carbon radicals. Part 2: Attempts at the preparation of polyradicals of the triphenylmethyl type linked by P-phenylene units

As starting materials for the preparation of polyradicals of triphenylmethyl type linked by p-phenylene units bis(4-iodophenylmethane) and bis(4-iodo-2,5-dimethyl-phenylmethane) were synthesized by a Sandmeyer reaction from the corresponding diamino compounds and subsequently transformed into the corresponding polymeric hydrocarbons 6a and 6b by an Ullmann condensation. In the following step 6a and 6b were brominated at the tert. carbon atom by means of N-bromosuccinimide. The reaction of the resulting poly (4,4'-biphenylylen-alpha-bromobenzylidene)s (7a and 7b) with mercury afforded the corresponding radicals, the ESR spectra of which were recorded. From the methyl substituted polymer 7b poly (2,2'5,5-tetramethyl-4,4'-bi-phenylylen)phenylmethylidyne was formed, whereas the unsubstituted product 7a was transformed into a para-quinoide polymer with radical properties.

Braun, D.↗
NASA NTRS1985

Determination of primary energy in nucleus-nucleus collisions and the high P(sub)T tail of alpha-particles

A determination of primary energy is required in order to study the energy dependence of meson multiplicity in A-A collisions in cosmic rays. Various procedures which estimate the energy of a primary nucleus from its interaction were investigated. An average of two methods were used, one using the pions and wounded protons and the other using spectator protons and alpha particles. The high P sub T tail observed for Z = 2 fragments requires a modification of the latter method.

Freier, P. S.↗
NASA NTRS1985

p-n junction formation in InSb and InAs(1-x)Sb(x) by metalorganic chemical vapor deposition

p-n junctions have been fabricated in InSb and InAs(1-x)Sb(x)(0.4 less than x less than 0.7) using metalorganic chemical vapor deposition. These junctions showed soft breakdown in addition to forward characteristics with a diode factor greater than 2. The ternary alloy has a cut-off wavelength in the 8-11-micron range, thus providing a potential material system for detectors covering the 8-12-micron range.

Chiang, P. K.↗
NASA NTRS1985

Observations of low-degree P-mode oscillations in 1984

Analysis of Stanford differential velocity observations has been extended through the 1984 observing season. Excellent quality observations were obtained in 1984 on 38 days in a 49 day interval from June 20th through August 7th. The power spectrum of this data has been examined and improved frequency determinations have been made for p-modes of degree 2 through 5 and order 5 through 34. Of special interest are the modes of the lower orders, n ranging from 5 to 10, which have not been identified previously.

Henning, H. M.↗
NASA NTRS1988

Large optical nonlinearities in a GaAs/AlGaAs hetero n-i-p-i structure

Light-induced changes in the absorption of a multiple quantum well hetero n-i-p-i structure at room temperature have been measured using a pump-probe method. Changes in the absorption coefficient in the quantum wells of more than 2000/cm have been observed with pump intensities as small as 375 mW/sq cm. Corresponding changes in the index of refraction of about 0.02 have been calculated.

Kost, A.↗
NASA NTRS1991

Temperature coefficients and radiation induced DLTS spectra of MOCVD grown n(+)p InP solar cells

The effects of temperature and radiation on n(+)p InP solar cells and mesa diodes grown by metallorganic chemical vapor deposition (MOCVD) were studied. It was shown that MOCVD is capable of consistently producing good quality InP solar cells with Eff greater than 19 percent which display excellent radiation resistance due to minority carrier injection and thermal annealing. It was also shown that universal predictions of InP device performance based on measurements of a small group of test samples can be expected to be quite accurate, and that the degradation of an InP device due to any incident particle spectrum should be predictable from a measurement following a single low energy proton irradiation.

Walters, Robert J.↗
NASA NTRS1993

High temperature annealing of minority carrier traps in irradiated MOCVD n(+)p InP solar cell junctions

Deep level transient spectroscopy was used to monitor thermal annealing of trapping centers in electron irradiated n(+)p InP junctions grown by metalorganic chemical vapor deposition, at temperatures ranging from 500 up to 650K. Special emphasis is given to the behavior of the minority carrier (electron) traps EA (0.24 eV), EC (0.12 eV), and ED (0.31 eV) which have received considerably less attention than the majority carrier (hole) traps H3, H4, and H5, although this work does extend the annealing behavior of the hole traps to higher temperatures than previously reported. It is found that H5 begins to anneal above 500K and is completely removed by 630K. The electron traps begin to anneal above 540K and are reduced to about half intensity by 630K. Although they each have slightly different annealing temperatures, EA, EC, and ED are all removed by 650K. A new hole trap called H3'(0.33 eV) grows as the other traps anneal and is the only trap remaining at 650K. This annealing behavior is much different than that reported for diffused junctions.

Messenger, S. R.↗
NASA NTRS1996

Highly Accurate Beam Torsion Solutions Using the p-Version Finite Element Method

A new treatment of the classical beam torsion boundary value problem is applied. Using the p-version finite element method with shape functions based on Legendre polynomials, torsion solutions for generic cross-sections comprised of isotropic materials are developed. Element shape functions for quadrilateral and triangular elements are discussed, and numerical examples are provided.

Smith, James P.↗
NASA NTRS2002

Tropospheric Ozone during the TRACE-P Mission: Comparison between TOMS Satellite Retrievals and Aircraft Lidar Data, March 2001

Over the past several years, we have developed two new tropospheric ozone retrievals from the TOMS (Total Ozone Mapping Spectrometer) satellite instrument that are of sufficient resolution to follow pollution episodes. The modified-residual technique uses v. 7 TOMS total ozone and is applicable to tropical regimes in which the wave-one pattern in total ozone is observed. The TOMS-direct method ('TDOT' = TOMS Direct Ozone in the Troposphere) represents a new algorithm that uses TOMS radiances directly to extract tropospheric ozone in regions of constant stratospheric ozone. It is not geographically restricted, using meteorological regimes as the basis for classifying TOMS radiances and for selecting appropriate comparison data. TDOT is useful where tropospheric ozone displays high mixing ratios and variability characteristic of pollution. Some of these episodes were observed downwind of Asian biomass burning during the TRACE-P (Transport and Atmospheric Chemical Evolution-Pacific) field experiment in March 2001. This paper features comparisons among TDOT tropospheric ozone column depth, integrated uv-DIAL measurements made from NASA's DC-8, and ozonesonde data.

Frolov, A. D.↗
NASA NTRS2002

An Intercomparison and Evaluation of Aircraft-Derived and Simulated CO from Seven Chemical Transport Models During the TRACE-P Experiment

Four global scale and three regional scale chemical transport models are intercompared and evaluated during NASA's TRACE-P experiment. Model simulated and measured CO are statistically analyzed along aircraft flight tracks. Results for the combination of eleven flights show an overall negative bias in simulated CO. Biases are most pronounced during large CO events. Statistical agreements vary greatly among the individual flights. Those flights with the greatest range of CO values tend to be the worst simulated. However, for each given flight, the models generally provide similar relative results. The models exhibit difficulties simulating intense CO plumes. CO error is found to be greatest in the lower troposphere. Convective mass flux is shown to be very important, particularly near emissions source regions. Occasionally meteorological lift associated with excessive model-calculated mass fluxes leads to an overestimation of mid- and upper- tropospheric mixing ratios. Planetary Boundary Layer (PBL) depth is found to play an important role in simulating intense CO plumes. PBL depth is shown to cap plumes, confining heavy pollution to the very lowest levels.

Kiley, C. M.↗
NASA NTRS2003

Bisadducts from the Diels-Alder Trapping of Bis(o-Xylenols) Photochemically Generated from 2,5-Dibenzoyl-p-xylene

Photolysis of 2,5-dibenzoyl-p-xylene produces two discrete o-xylenols which undergo Diels-Alder cycloadditions with standard dienophiles, such as methyl acrylate, to produce 1,5-dihydroxy-1,5-diphenyl-l,2,3,4,5,6,7,8-octahydroanthracenes, 2a, in good yield (greater than 80%). The anti bisadduct crystallizes into hydrogen bonded stacks. Conversion of both syn- and anti-bisadducts to the corresponding anthracenes was achieved through the use of standard dehydration and aromatization chemistry.

Meador, Michael A.↗