DOE OSTI2017
The optical absorption and photoluminescence properties of cerium-activated (Pb,Gd){sub 3}(Al,Ga){sub 5}O{sub 12} epitaxial films are studied. The films are grown on single-crystal (111)-oriented Gd{sub 3}Ga{sub 5}O{sub 12} substrates by liquid-phase epitaxy from supercooled PbO – B{sub 2}O{sub 3} melt solutions at different concentrations of gadolinium, cerium, and aluminium oxides in the charge. The photoluminescence band of Ce{sup 3+} ions is shown to peak at 532 nm. The highest cathodoluminescence yield of about 51500 photons MeV{sup -1} at a decay time of the slow component of 61.0 ns (light yield fraction 68%) is found for the Pb{sub 0.01}Ce{sub 0.03}Gd{sub 2.96}Al{sub 3.14}Ga{sub 1.86}O{sub 12} film, grown from melt solution with gadolinium oxide, cerium oxide, and aluminium oxide concentrations of 0.4, 0.2, and 4.5 mol % in the charge, respectively. Epitaxial films with these spectroscopic characteristics are promising for application in scintillation screens. (fluorescence and photogeneration)