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At least 1,315 records · Page 73

Magneto-electric coupling in antiferromagnet/ferroelectric Mn{sub 2}Au/BaTiO{sub 3} interface

Within the crucial issue of the electric field control of magnetism, the use of antiferromagnets (AFMs) coupled to ferroelectrics is much less explored than the ferromagnets counterpart, although the first choice might lead to better performances and larger stability with respect to external perturbations (such as magnetic fields). Here, we explore the possibility to control the magnetic anisotropy of a Mn{sub 2}Au layer by reversing the ferroelectric polarization of BaTiO{sub 3} in Mn{sub 2}Au/BaTiO{sub 3} interfaces. By means of a thorough exploration of many possible geometry configurations, we identify the two most stable, corresponding to compressive and tensile strain at the interface. The first appears to be easy-axis, while the second—easy-plane—with a large induced moment on the interface Ti atom. The reversal of ferroelectric polarization changes the anisotropy by approximately 50%, thus paving the way to the control of AFM properties with an electric field.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Obtaining the solid-liquid interfacial free energy via multi-scheme thermodynamic integration: Ag-ethylene glycol interfaces

The solid-liquid interfacial free energy γ sl is an important quantity in wetting, nucleation, and crystal growth. Although various methods have been developed to calculate γ sl with atomic-scale simulations, such calculations still remain challenging for multi-component interfaces between molecular fluids and solids. In this paper, we present a multi-scheme thermodynamic integration method that is inspired by the “cleaving-wall” method and aimed at obtaining γ sl for such systems using open-source simulation packages. This method advances two aspects of its predecessor methods. First, we incorporate separate schemes to resolve difficulties when manipulating periodic boundary conditions of the supercell using open-source simulation packages. Second, we introduce a numerical approximation to obtain thermodynamic integrands for complex force fields when an analytical differentiation is not readily available. To demonstrate this method, we obtain γ sl for interfaces between Ag(100) and Ag(111) and ethylene glycol (EG). These interfacial free energies mirror interfacial potential energies for each facet. We also estimate entropies of interface formation and these are consistent with theoretical predictions in signs and trends. For the Ag-EG systems, we find that the largest contribution to γ sl is the free energy to create the bare metal surfaces. The second-largest contribution to γ sl is from the liquid-solid interaction. Finally, this user-friendly method will accelerate investigation in a broad range of research topics, such as the thermodynamic effect of structure-directing agents in solution-phase shape-controlled nanocrystal syntheses.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Thermal interfaces in dynamic compression experiments

Temperature is a difficult thermodynamic variable to measure in dynamic compression experiments. Optical pyrometry is a general-purpose technique for measuring temperature from a radiant surface, but that surface is often the interface between distinct materials with temperatures that vary spatially along the loading direction. This leads to a fundamental problem: how does the measured interface temperature relate to this temperature profile along the compression axis? Numerical analysis of loading history and thermal diffusion at these interfaces shows that seemingly subtle changes in experiment geometry can lead to very different temperature profiles. We compare these results to laboratory temperature measurements of shock-compressed tin.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Interface learning in fluid dynamics: Statistical inference of closures within micro–macro-coupling models

Many complex multiphysics systems in fluid dynamics involve using solvers with varied levels of approximations in different regions of the computational domain to resolve multiple spatiotemporal scales present in the flow. The accuracy of the solution is governed by how the information is exchanged between these solvers at the interface and several methods have been devised for such coupling problems. In this article, we construct a data-driven model by spatially coupling a microscale lattice Boltzmann method (LBM) solver and macroscale finite difference method (FDM) solver for reaction-diffusion systems. The coupling between the micro-macro solvers has one to many mapping at the interface leading to the interface closure problem, and we propose a statistical inference method based on neural networks to learn this closure relation. The performance of the proposed framework in a bifidelity setting partitioned between the FDM and LBM domain shows its promise for complex systems where analytical relations between micro-macro solvers are not available.

42 ENGINEERING↗

Hidden features in the OH-stretching spectra of amino acid decorated air–water interfaces

Chemical reactivity at the air–water interface is governed by the interfacial solvation of reactive species. For instance, during aqueous amino acid-based CO 2 absorption, water reorganizes around the reactive sites and couples dynamically with reaction pathways, facilitating the reaction. In this context, surface-sensitive vibrational sum-frequency generation (vSFG) spectroscopy can probe the OH stretch vibrations of interfacial water and determine the solvation structures around reactants and products, thereby furthering our understanding of the role of interfacial solvation. However, vSFG spectra of the air–water interface in the presence of charged species can be remarkably complex; key species-bound local water structures with distinct orientations may be hidden beneath prominent vSFG peaks arising from water–water hydrogen bonds and remain difficult to resolve. Here, we measure and compute vSFG spectra of the water OH stretch at air–water interfaces decorated with amino acids in their zwitterionic and anionic forms, as well as equimolar mixtures of these forms with bicarbonate. The latter represents post-CO 2 -absorption conditions. We find that computing depth- and frequency-dependent spectral densities—decomposed into contributions from water molecules hydrogen-bonded exclusively to other water molecules, exclusively to amines, exclusively to carboxylates, or shared between these polar/charged groups—is indispensable for accurate interpretation of the vSFG spectra. Key findings include orientational flip-flop in water sub-layers, strong carboxylate-water H-bonding, and water orientational ordering extending into the bulk aqueous phase induced by anionic amino acids. Here, this study provides a computational spectroscopic platform for improved understanding of interfacial solvation relevant to interfacial reactivity.

Air-water interface↗

Strong adsorption of guanidinium cations to the air–water interface

Combining Deep-UV second harmonic generation spectroscopy with molecular simulations, we confirm and quantify the specific adsorption of guanidinium cations to the air–water interface. Using a Langmuir analysis of measurements at multiple concentrations, we extract the Gibbs free energy of adsorption, finding it larger than typical thermal energies. Molecular simulations clarify the role of polarizability in tuning the thermodynamics of adsorption, and establish the preferential parallel alignment of guanidinium at the air–water interface. As a polyatomic cation, guanidinium represents one of the few examples of a positively charged species to exhibit a propensity for the air-water interface. As such, these results expand on the growing body of work on specific ion adsorption.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Molecular dynamics simulation of zirconium tungstate amorphization and the amorphous-crystalline interface

Classical molecular dynamics (MD) simulations were performed to provide a conceptual understanding of the amorphous-crystalline interface for a candidate negative thermal expansion (NTE) material, ZrW 2 O 8 . Simulations of pressure-induced amorphization at 300 K indicate that an amorphous phase forms at pressures of 10 GPa and greater, and this phase persists when the pressure is subsequently decreased to 1 bar. However, the crystalline phase is recovered when the slightly distorted 5 GPa phase is relaxed to 1 bar. Simulations were also performed on a two-phase model consisting of the high-pressure amorphous phase in direct contact with the crystalline phase. Upon equilibration at 300 K and 1 bar, the crystalline phase remains unchanged beyond a thin layer of disrupted structure at the crystalline-amorphous interface. In conclusion, the differences in local atomic structure at the interface are quantified from the simulation trajectories.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Detection of uncompensated magnetization at the interface of an epitaxial antiferromagnetic insulator

We have probed directly the temperature and magnetic field dependence of pinned uncompensated magnetization at the interface of antiferromagnetic FeF 2 with Cu, using FeF 2 -Cu-Co spin valves. Electrons polarized by the Co layer are scattered by the pinned uncompensated moments at the FeF 2 -Cu interface giving rise to giant magnetoresistance. We determined the direction and magnitude of the pinned uncompensated magnetization at different magnetic fields and temperatures using the angular dependencies of resistance. The strong FeF 2 anisotropy pins the uncompensated magnetization along the easy axis independent of the cooling field orientation. Most interestingly, magnetic fields as high as 90 kOe cannot break the pinning at the FeF 2 -Cu interface. This proves that the pinned interfacial magnetization is strongly coupled to the antiferromagnetic order inside the bulk FeF 2 layer. Studies as a function of FeF2 crystalline orientation show that uncompensated spins are only detected in a spin valve with (110) crystal orientation, but not in valves containing FeF 2 (100) and FeF 2 (001). This observation is in agreement with symmetry-related considerations which predict the equilibrium boundary magnetization for the FeF 2 (110) layer.

36 MATERIALS SCIENCE↗

Emergence of topological and trivial interface states in VSe 2 films coupled to Bi 2 Se 3

Coupling ordinary metals with topological Bi 2 Se 3 can instigate the long-range migration of the spin-polarized Dirac states. Instead, for trivial metallic VSe 2 films on Bi 2 Se 3 , topological and trivial Rashba-type interface states emerge, each strongly localized at the VSe 2 /Bi 2 Se 3 interface. Their rapidly decaying spectral weights are uncovered by thickness-dependent band mappings of VSe 2 films and replicated by a phenomenological first-principles model of the spectral function. In this work, the results are pertinent to spintronic devices requiring spin transmission across metal/topological insulator interfaces.

36 MATERIALS SCIENCE↗

Anisotropic multicarrier transport at the (111) LaAlO 3 /SrTiO 3 interface

The conducting gas that forms at the interface between LaAlO 3 and SrTiO 3 has proven to be a fertile playground for a wide variety of physical phenomena. The bulk of previous research has focused on the (001) and (110) crystal orientations. In this work, we report detailed measurements of the low-temperature electrical properties of (111) LAO/STO interface samples. We find that the low-temperature electrical transport properties are highly anisotropic in that they differ significantly along two mutually orthogonal crystal orientations at the interface. While anisotropy in the resistivity has been reported in some (001) samples and in (110) samples, the anisotropy in the (111) samples reported here is much stronger and also manifests itself in the Hall coefficient as well as the capacitance. In addition, the anisotropy is not present at room temperature and at liquid nitrogen temperatures, but only at liquid helium temperatures and below. The anisotropy is accentuated by exposure to ultraviolet light, which disproportionately affects transport along one surface crystal direction. Furthermore, analysis of the low-temperature Hall coefficient and the capacitance as a function of back gate voltage indicates that in addition to electrons, holes contribute to the electrical transport.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Antiferromagnetic Fe Te 2 1 T - phase formation at the Sb 2 Te 3 / Ni 80 Fe 20 interface

Bilayer topological insulator/ferromagnet (TI/FM) heterostructures are promising for spintronic applications due to their low switching energy and therefore power efficiency. Until recently, the reactivity of TI with FM films was overlooked in the spin orbit-torque literature, even though there are reports that it is energetically favorable for TIs to react with transition metals and form interfacial layers. Here, in this study we fabricated a TI/FM heterostructure comprised of molecular beam epitaxy grown Sb 2 Te 3 and DC sputtered Ni 80 Fe 20 . Broadband ferromagnetic resonance revealed spin-pumping evident by the significant enhancement in Gilbert damping, which is likely a signature of the topological surface states or the presence of large spin-orbit-coupling in the adjacent Sb 2 Te 3 . With low-temperature magnetometry, an exchange bias is observed which indicates an exchange interaction between an antiferromagnet (AFM) and an adjacent FM. Cross-section high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) characterization of the Sb 2 Te 3 - Ni 80 Fe 20 bilayer revealed a complex interface showing diffusion of Fe and Ni into the Sb 2 Te 3 film yielding the formation of a FeTe 2 1T-type structural phase. Furthermore, density functional theory calculations revealed that the FeTe 2 1T-phase has an AFM ground state. Due to experimental limitations in the electron energy loss spectroscopy measurements precise chemistry of the interfacial phase could not be determined, therefore it is possible that the FeTe 2 1T and/or an intermixed (Fe 1-x Ni x )Te 2 1T is the AFM interfacial phase contributing to exchange bias in the system. This work emphasizes the chemical complexity of TI/FM interfaces that host novel, metastable magnetic topological phases and require more in-depth studies of other similar interfaces.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

First Principles Predictions of SnO2/CdTe and SnO2/CdCl2/CdTe Interface Structures

Interfaces become increasingly the limiting factor of solar cell efficiency, raising the interest in computational models. However, explicit atomic structure models from microscopy are rare, and hypothetical assumptions about the atomic structure become ambiguous for incoherent or highly lattice mismatched interfaces. Adopting a bulk crystal structure prediction algorithm to interfacial systems enables explicit structure models for the bare and CdCl 2 treated SnO 2 /CdTe interface.

CdTe↗

An Energy Service Interface for Distributed Energy Resources

Renewable energy resources, particularly wind and solar photovoltaic, are becoming significant contributors to electric power generation. These re-sources will contribute towards achieving sustainable electric power systems. However, renewable resources will dramatically increase the demand for flexible power system operations. This paper proposes an energy service interface that will allow aggregated distributed energy resources, such as residential loads and inverter-based systems, to participate in NERC-defined smart energy reliability services. Such cyber-physical systems will increase system flexibility by ensuring match between energy supply and energy demand.Aggregation and coordinated dispatch of millions of distributed energy resources will require development of large-scale computing networks. Several smart grid interface-enabling technologies, including IEEE 2030.5, Common Smart Inverter Profile, SunSpec Modbus, and CTA 2045, are discussed. Residential loads are categorized by their static and dynamic energy characteristics to identify services in which they can participate. The business model for the energy services interface as well as probabilistic modeling for resource estimation are highlighted as future considerations.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Proposed Application for an Entity Component System in an Energy Services Interface

An Entity Component System is a data-oriented architecture originally developed to streamline video game performance. Despite being quite new, Entity Component Systems are relatively well established within the video game industry due to the cutting edge nature of research into performance, especially around graphics. However, Entity Component Systems have not been widely examined or adopted outside of that industry. We propose adopting an Entity Component Systems framework to serve the needs of an Energy Service Interfaces. We examine the needs of an Energy Service Interface, give an overview of open-source Entity Component Systems (ECSs) libraries, examine some preliminary performance results for ECSs, and explore the traditional approach to fulfilling the needs of an Energy Service Interface (ESI) with database architectures.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Emergent phenomena at oxide interfaces studied with standing-wave photoelectron spectroscopy

Emergent phenomena at complex-oxide interfaces have become a vibrant field of study in the past two decades due to the rich physics and a wide range of possibilities for creating new states of matter and novel functionalities for potential devices. The electronic-structural characterization of such phenomena presents a unique challenge due to the lack of direct yet nondestructive techniques for probing buried layers and interfaces with the required Ångstrom-level resolution, as well as element and orbital specificity. In this Review, we survey several recent studies wherein soft x-ray standing-wave photoelectron spectroscopy—a relatively newly developed technique—is used to investigate buried oxide interfaces exhibiting emergent phenomena such as metal-insulator transition, interfacial ferromagnetism, and two-dimensional electron gas. The advantages, challenges, and future applications of this methodology are also discussed.

36 MATERIALS SCIENCE↗

Review of recent studies on nanoscale electrical junctions and contacts: Quantum tunneling, current crowding, and interface engineering

The study of charge carrier transport at nanoscale electrical contacts is crucial for the development of next-generation electronics. In this study, we review recent modeling efforts on quantum tunneling, current crowding, and contact resistance across electrical interfaces with nanometer scale dimensions. A generalized self-consistent model for quantum tunneling induced electron transport in metal–insulator–metal (MIM) junctions is summarized. Rectification of a dissimilar MIM junction is reviewed. A modified two-dimensional (2D) transmission line model is used to investigate the effects of spatially varying specific contact resistivity along the contact length. The model is applied to various types of electrical contacts, including ohmic contacts, MIM junction based tunneling contacts, and 2D-material-based Schottky contacts. Roughness engineering is recently proposed to offer a possible paradigm for reducing the contact resistance of 2D-material-based electrical contacts. Contact interface engineering, which can mitigate current crowding near electrical contacts by spatially designing the interface layer thickness or properties, without requiring an additional material or component, is briefly reviewed. Tunneling engineering is suggested to eliminate severe current crowding in highly conductive ohmic contacts by introducing a thin tunneling layer or gap between the contact members. Furthermore, unsolved problems and challenges are also discussed.

2D materials↗

Nonlinear Surface Waves at the Interface between Optical Media with Different Nonlinearity Induction Mechanisms

Different types of nonlinear surface waves with a peculiar polarization, which emerge at the interface between a photorefractive crystal and a medium with Kerr nonlinearity, are described. The cases of focusing and defocusing nonlinearity are considered. It is shown that several types of nonlinear surface waves with an asymmetric profile can exist in such a system. Waves of one type attenuate with increasing distance from the interface without oscillations towards the bulk of the photorefractive crystal as well as the Kerr crystal, while waves of another type decay with oscillations. Two types of localized states differing in the form of field damping with and without oscillations can exist near the interface between the photorefractive crystal and the medium with defocusing Kerr nonlinearity. Dispersion relations are obtained and the conditions for the existence of all aforementioned types of waves depending on the optical characteristics of the crystals are indicated. Exact solutions to dispersion equations are obtained in explicit analytic form; these solutions describe the dependence of the propagation constant on the optical characteristics of the crystals.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Generation of surface electron states with a silicon–ultrathin-oxide interface under the field-induced damage of metal–oxide–semiconductor structures

The high-frequency capacitance–voltage characteristics of metal–oxide–semiconductor structures on n-Si substrates with an oxide thickness of 39 Å are studied upon being subjected to damage by field stress. It is shown that the action of a high, but pre-breakdown electric field on an ultrathin insulating layer brings about the formation of a large number of additional localized interface electron states with an energy level arranged at 0.14 eV below the conduction band of silicon. It is found that, as the field stress is increased, the recharging of newly formed centers provides the accumulation of excess charge up to 8 × 10{sup 12} cm{sup –2} at the silicon–oxide interface. The lifetime of localized centers created under field stress is two days, after which the dependences of the charge localized at the semiconductor–insulator interface on the voltage at the gate after and before field stress are practically the same.

36 MATERIALS SCIENCE↗