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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,315 records · Page 73
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Direct formation of nitrogen-vacancy centers in nitrogen doped diamond along the trajectories of swift heavy ions

We report depth-resolved photoluminescence measurements of nitrogen-vacancy (NV$^-$) centers formed along the tracks of swift heavy ions in type Ib synthetic single crystal diamonds that had been doped with 100 ppm nitrogen during crystal growth. Analysis of the spectra shows that NV$^-$ centers are formed preferentially within regions where electronic stopping processes dominate and not at the end of the ion range where elastic collisions lead to formation of vacancies and defects. Thermal annealing further increases NV yields after irradiation with SHI preferentially in regions with high vacancy densities. NV centers formed along the tracks of single swift heavy ions can be isolated with lift-out techniques for explorations of color center qubits in quasi 1D registers with average qubit spacing of a few nm and of order 100 color centers per micron along 10 to 30 micron long percolation chains.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2024

Studying single-electron traps in newly fabricated Skipper-CCDs for the Oscura experiment using the pocket-pumping technique

Understanding and characterizing very low-energy (⁠ ∼eV) background sources is a must in rare-event searches. Oscura, an experiment aiming to probe electron recoils from sub-GeV dark matter using a 10 kg skipper-CCD detector, has recently fabricated its first two batches of sensors. In this work, we present the characterization of defects/contaminants identified in the buried-channel region of these newly fabricated skipper-CCDs. These defects/contaminants produce deferred charge from trap emission in the images next to particle tracks, which can be spatially resolved due to the sub-electron resolution achieved with these sensors. Using the trap-pumping technique, we measured the energy and cross section associated with these traps in three Oscura prototype sensors from different fabrication batches which underwent different gettering methods during fabrication. Results suggest that the type of defects/contaminants is more closely linked to the fabrication batch rather than to the gettering method used. The exposure-dependent single-electron rate (SER) of one of these sensors was measured ∼100 m underground, yielding (1.8±0.3)×10−3e−/pix/day at 131 K. The impact of the identified traps on the measured exposure-dependent SER is evaluated via a Monte Carlo simulation. Results suggest that the exposure-dependent SER of Oscura prototype sensors would be lower in lower background environments as expected.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2017

Optimal periodic frequency combs for high-efficiency optical quantum memory based on rare-earth ion crystals

The possibility of enhancing the quantum efficiency of photon echo broadband quantum memory in rare-earth-ion-doped crystals with a frequency comb structure of optical transition inhomogeneous broadening is studied. We have found the optimal parameters of the frequency combs for implementing the pre-assigned quantum efficiency in the chosen spectral range of the optical transitions of rare-earth ions with real parameters. The obtained results allow the conditions to be formulated for increasing the efficiency of broadband quantum memory. The possibilities of experimental implementation of such memory are also discussed. (paper)

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Beam-contamination-induced compositional alteration and its neutron-atypical consequences in ion simulation of neutron-induced void swelling

Although accelerator-based ion irradiation has been widely accepted to simulate neutron damage, neutron-atypical features need to be carefully investigated. In this study, we have shown that Coulomb force drag by ion beams can introduce significant amounts of carbon, nitrogen, and oxygen into target materials even under ultra-high vacuum conditions. The resulting compositional and microstructural changes dramatically suppress void swelling. By applying a beam-filtering technique, introduction of vacuum contaminants is greatly minimized and the true swelling resistance of the alloys is revealed and matches neutron behavior closely. These findings are a significant step toward developing standardized procedures for emulating neutron damage.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Experimental studies on the formation of D{sub 2}O and D{sub 2}O{sub 2} by implantation of energetic D{sup +} ions into oxygen ices

The formation of water (H{sub 2}O) in the interstellar medium is intrinsically linked to grain-surface chemistry; thought to involve reactions between atomic (or molecular) hydrogen with atomic oxygen (O), molecular oxygen (O{sub 2}), and ozone (O{sub 3}). Laboratory precedent suggests that H{sub 2}O is produced efficiently when O{sub 2} ices are exposed to H atoms (∼100 K). This leads to the sequential generation of the hydroxyperoxyl radical (HO{sub 2}), then hydrogen peroxide (H{sub 2}O{sub 2}), and finally H{sub 2}O and a hydroxyl radical (OH); despite a barrier of ∼2300 K for the last step. Recent detection of the four involved species toward ρ Oph A supports this general scenario; however, the precise formation mechanism remains undetermined. Here, solid O{sub 2} ice held at 12 K is exposed to a monoenergetic beam of 5 keV D{sup +} ions. Products formed during the irradiation period are monitored through FTIR spectroscopy. O{sub 3} is observed through seven archetypal absorptions. Three additional bands found at 2583, 2707, and 1195 cm {sup –1} correspond to matrix isolated DO{sub 2} (ν{sub 1}) and D{sub 2}O{sub 2} (ν{sub 1}, ν{sub 5}), and D{sub 2}O (ν{sub 2}), respectively. During subsequent warming, the O{sub 2} ice sublimates, revealing a broad band at 2472 cm{sup –1} characteristic of amorphous D{sub 2}O (ν{sub 1}, ν{sub 3}). Sublimating D{sub 2}, D{sub 2}O, D{sub 2}O{sub 2}, and O{sub 3} products were confirmed through their subsequent detection via quadrupole mass spectrometry. Reaction schemes based on both thermally accessible and suprathermally induced chemistries were developed to fit the observed temporal profiles are used to elucidate possible reaction pathways for the formation of D{sub 2}-water. Several alternative schemes to the hydrogenation pathway (O{sub 2}→HO{sub 2}→H{sub 2}O{sub 2}→H{sub 2}O) were identified; their astrophysical implications are briefly discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Implantation of energetic D{sup +} ions into carbon dioxide ices and implications for our solar system: formation of D{sub 2}O and D{sub 2}CO{sub 3}

Carbon dioxide (CO{sub 2}) ices were irradiated with energetic D{sup +} ions to simulate the exposure of oxygen-bearing solar system ices to energetic protons from the solar wind and magnetospheric sources. The formation of species was observed online and in situ by exploiting FTIR spectroscopy. Molecular products include ozone (O{sub 3}), carbon oxides (CO{sub 3}(C {sub 2v}, D {sub 3h}), CO{sub 4}, CO{sub 5}, CO{sub 6}), D2-water (D{sub 2}O), and D2-carbonic acid (D{sub 2}CO{sub 3}). Species released into the gas phase were sampled via a quadrupole mass spectrometer, and possible minor contributions from D2-formaldehyde (D{sub 2}CO), D4-methanol (CD{sub 3}OD), and D2-formic acid (DCOOD) were additionally identified. The feasibility of several reaction networks was investigated by determining their ability to fit the observed temporal column densities of 10 key species that were quantified during the irradiation period. Directly relevant to the CO{sub 2}-bearing ices of comets, icy satellites in the outer solar system, and the ice caps on Mars, this work illustrates for the first time that D2-water is formed as a product of the exposure of CO{sub 2} ices to D{sup +} ions. These findings provide strong support for water formation from oxygen-bearing materials via non-thermal hydrogen atoms, and predict reaction pathways that are likely to be unfolding on the surfaces of asteroids and the Moon.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2025

Relationship between atomic and electronic structure in Ln-bearing oxides

Metastable states of matter are of great interest as they offer the promise of novel functionality. They are often a natural consequence of exposure to nonequilibrium environments. In oxides, metastability can take the form of new polymorphs, chemical disorder, and even amorphization. While significant attention has been given to the impact those changes have on the atomic properties of the material, the corresponding changes in the electronic structure have received less attention. Here, using density functional theory, we consider how the electronic structure varies with potential metastable structures in two classes of lanthanide-bearing oxides—pyrochlores and interlanthanide sesquioxides. We find that the changes depend strongly on both the crystal structure and crystal chemistry of the compound with, for example, disordering and amorphization either increasing or decreasing the bandgap depending on the chemistry. For the 𝐴 2 ⁢𝐵 2 ⁢O 7 pyrochlores, we find different dependencies of the bandgap on the 𝐴 = 𝐿⁢𝑛 cations as the 𝐵 cation is changed, which we relate to the nature of the density of states at the conduction band minimum for different 𝐵 chemistries. Our calculations are validated by electron energy loss spectroscopy measurements for two pyrochlore compounds in which amorphization does reduce the bandgap, consistent with our calculations on these two compounds. In conclusion, our results highlight the relationship between atomic and electronic structure and how radiation can be used to modify and potentially control the electronic properties of oxides.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Effect of localization on photoluminescence and zero-field splitting of silicon color centers

The study of defect centers in silicon has been recently reinvigorated by their potential applications in optical quantum information processing. A number of silicon defect centers emit single photons in the telecommunication O-band, making them promising building blocks for quantum networks between computing nodes. The two-carbon G-center, self-interstitial W-center, and spin-1/2 T-center are the most intensively studied silicon defect centers, yet despite this, there is no consensus on the precise configurations of defect atoms in these centers, and their electronic structures remain ambiguous. Here, in this work, we employ ab initio density functional theory to characterize these defect centers, providing insight into the relaxed structures, band structures, and photoluminescence spectra, which are compared to experimental results. Motivation is provided for how these properties are intimately related to the localization of electronic states in the defect centers. In particular, we present the calculation of the zero-field splitting for the excited triplet state of the G-center defect as the structure is linearly interpolated from the A-configuration to the B-configuration, showing a sudden increase in the magnitude of the D zz component of the zero-field-splitting tensor. By performing projections onto the local orbital states of the defect, we analyze this transition in terms of the symmetry and bonding character of the G-center defect, which sheds light on its potential application as a spin-photon interface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

β decay of He 6 into the α + d continuum

Here, the rare β-decay channel of 6 He into the α+d continuum was investigated at the REX-ISOLDE facility. Bunches of postaccelerated 6 He ions were implanted into the optical time projection chamber (OTPC), where the decays with emission of charged particles were recorded. This novel technique allowed us to extend the low-energy end of the spectrum down to 150 keV in α+d center of mass, corresponding to a deuteron energy of 100 keV. The branching ratio for this process amounts to [2.78±0.07(stat)±0.17(sys)]×10 –6 . The shape of the spectrum is found to be in a good agreement with a three-body model, while the total intensity is about 20% larger than the predicted one.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2017

Towards diluted magnetism in TaAs

Magnetism in Weyl semimetals is desired to investigate the interaction between the magnetic moments and Weyl fermions, e.g., to explore anomalous quantum Hall phenomena. In this work, we demonstrate that proton irradiation is an effective tool to induce ferromagnetism in the Weyl semimetal TaAs. The intrinsic magnetism is observed with a transition temperature above room temperature. The magnetic moments from d states are found to be localized around Ta atoms. Further, the first-principles calculations indicate that the d states localized on the nearest-neighbor Ta atoms of As vacancy sites are responsible for the observed magnetic moments and the long-ranged magnetic order. The results show the feasibility of inducing ferromagnetism in Weyl semimetals so that they may facilitate the applications of this material in spintronics.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Local control of defects and switching properties in ferroelectric thin films

Electric-field switching of polarization is the building block of a wide variety of ferroelectric devices. In turn, understanding the factors affecting ferroelectric switching and developing routes to control it are of great technological significance. This research provides systematic experimental evidence of the role of defects in affecting ferroelectric-polarization switching and utilizes the ability to deterministically create and spatially locate point defects in $PbZr_{0.2}Ti_{0.8}O_3$ thin films via focused-helium-ion bombardment and the subsequent defect-polarization coupling as a knob for on-demand control of ferroelectric switching (e.g., coercivity and imprint). At intermediate ion doses ($0.22-2.2×10^{14}\,ions\,cm^{-2}$), the dominant defects (isolated point defects and small clusters) show a weak interaction with domain walls (pinning potentials from $200-500\,K\,MV\,cm^{-1}$), resulting in small and symmetric changes in the coercive field. At high doses ($0.22-1×10^{15}\,ions\,cm^{-2}$), on the other hand, the dominant defects (larger defect complexes and clusters) strongly pin domain-wall motion (pinning potentials from 500 to $1600\,K\,MV\,cm^{-1}$), resulting in a large increase in the coercivity and imprint, and a reduction in the polarization. This local control of ferroelectric switching provides a route to produce novel functions; namely, tunable multiple polarization states, rewritable pre-determined 180° domain patterns, and multiple zero-field piezoresponse and permittivity states. Such an approach opens up pathways to achieve multilevel data storage and logic, nonvolatile self-sensing shape-memory devices, and nonvolatile ferroelectric field-effect transistors.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Phonon scattering effects from point and extended defects on thermal conductivity studied via ion irradiation of crystals with self-impurities

Fundamental theories predict that reductions in thermal conductivity from point and extended defects can arise due to phonon scattering with localized strain fields. In this paper, to experimentally determine how these strain fields impact phonon scattering mechanisms, we employ ion irradiation as a controlled means of introducing strain and assorted defects into the lattice. In particular, we observe the reduction in thermal conductivity of intrinsic natural silicon after self-irradiation with two different silicon isotopes, $^{28}\mathrm{Si}^{+}$ and $^{29}\mathrm{Si}^{+}$. Irradiating with an isotope with a nearly identical atomic mass as the majority of the host lattice produces a damage profile lacking mass impurities and allows us to assess the role of phonon scattering with local strain fields on the thermal conductivity. Our results demonstrate that point defects will decrease the thermal conductivity more so than spatially extended defect structures assuming the same volumetric defect concentrations due to the larger strain per defect that arises in spatially separated point defects. Finally, with thermal conductivity models using density functional theory, we show that for a given defect concentration, the type of defect (i.e., point vs extended) plays a negligible role in reducing the thermal conductivity compared to the strain per defect in a given volume.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Micro-beam Laue alignment of multi-reflection Bragg coherent diffraction imaging measurements

Multi-reflection Bragg coherent diffraction imaging has the potential to allow three-dimensional (3D) resolved measurements of the full lattice strain tensor in specific micro-crystals. Until now such measurements were hampered by the need for laborious, time-intensive alignment procedures. Here, in this paper, a different approach is demonstrated, using micro-beam Laue X-ray diffraction to first determine the lattice orientation of the micro-crystal. This information is then used to rapidly align coherent diffraction measurements of three or more reflections from the crystal. Based on these, 3D strain and stress fields in the crystal are successfully determined. This approach is demonstrated on a focused ion beam milled micro-crystal from which six reflections could be measured. Since information from more than three independent reflections is available, the reliability of the phases retrieved from the coherent diffraction data can be assessed. Lastly, our results show that rapid, reliable 3D coherent diffraction measurements of the full lattice strain tensor in specific micro-crystals are now feasible and can be successfully carried out even in heavily distorted samples.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Trap Passivation for Reducing On-Resistance and Saturation Voltage in Wafer-Bonded InGaAs-Channel/GaN-Drain Vertical FETs

High frequency and high power are the driving forces behind semiconductor transistor technology. However, conventional devices have the tradeoff of either being high speed or high breakdown—but not both. Wafer-bonded current aperture vertical electron transistors (BAVETs) help eliminate the tradeoff by combining a high-speed III-As channel to a high-breakdown III-N drift region. The device presented herein comprises of an InAlAs gate-barrier/InGaAs channel, wafer-bonded to an InGaN/GaN drift region, with the InGaAs/InGaN interface referred to as the wafer-bonded interface (WBI). The electronic behavior of WBIs is yet less known but necessary in realizing the potential of a BAVET. Herein, strong trap activity at the WBI is shown to be the cause of abnormally high saturation voltage ( V DS_SAT ) in BAVETs. The traps cause unintentional space charge (SC) region in the drain region of the device. This causes a drain resistance, a higher ON-resistance ( R ON ), and a higher V DS_SAT . Here, the challenge is overcome by hydrogen passivation of traps at WBI by using a p-doping for the InAlAs layer, which reduces the trap-charge concentration at the WBI. Consequently, the width of the SC region is reduced and a reduction in V DS_SAT is demonstrated, wherein it reduces from >12 to 5 V.

36 MATERIALS SCIENCE↗
DOE OSTI2020

DFF Layout Variations in CMOS SOI—Analysis of Hardening by Design Options

Four D flip-flop (DFF) layouts were created from the same schematic in Sandia National Laboratories’ CMOS7 silicon-on-insulator (SOI) process. Single-event upset (SEU) modeling and testing showed an improved response with the use of shallow (not fully bottomed) N-type metal-oxide-semiconductor field-effect transistors (NMOSFETs), extending the size of the drain implant and increasing the critical charge of the transmission gates in the circuit design and layout. This research also shows the importance of correctly modeling nodal capacitance, which is a major factor determining SEU critical charge. Accurate SEU models enable the understanding of the SEU vulnerabilities and how to make the design more robust.

42 ENGINEERING↗
DOE OSTI2014

Effects of He Irradiation on Yttria-Stabilized Zirconia Ceramics

Here we study the effects of He irradiation on polycrystalline yttria-stabilized zirconia (YSZ), with the focus on irradiation-induced damage buildup, He behavior, and volume swelling. The evolution of irradiation-induced structural damage in polycrystalline YSZ, which is independent of grain orientation, is described by a multistep damage accumulation model. We found a three-step damage evolution process, and we observed different types of defects in the different damage steps. Compared with single-crystal YSZ, the second damage step occurs at a lower dose in polycrystalline YSZ due to the initial defects and strain. The implanted He ions are readily trapped along the grain boundaries and the mobility of He ions is greatly increased. The enhanced He mobility along the grain boundary leads to a lower threshold irradiation dose and a larger penetration depth for bubble formation. Similar morphologies are observed for the He bubbles in the polycrystalline YSZ is not influenced by grain orientation. Lastly, as both the extended defects and He bubbles can induce volume swelling, the variation in volume swelling as a function of dose can be divided into a two stage process.

36 MATERIALS SCIENCE↗