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The unique physicochemical properties of non-Ti-MXenes make them excellent class of materials for flexible and wearable electronics.
Uniaxial stress is used to detwin samples of orthorhombic iron based superconductors to study their intrinsic electronic anisotropy. Here we describe the development of a new detwinning setup enabling variable-load stress-detwinning with easy sample mounting/dismounting without the need to re-solder the contacts. It enables the systematic study of the anisotropy evolution as a function of an external parameter when the sample is modified between the measurements. In our case, the external parameter is the dose of 2.5 MeV electron irradiation at low temperature. We illustrate the approach by studying resistivity anisotropy in single crystals of Ba 1-x K x Fe 2 As 2 at x =0.25 where the much discussed unusual re-entrance of tetragonal C 4 phase, C 4 → C 2 → C 4 , is observed on cooling. With the described technique we found a significant anisotropy increase in C 2 phase after electron irradiation with dose of 2.35 C/cm 2 .
Modern electronics and materials science are bringing revolutionary advances to biointerface design and are shattering the limits of what is possible in the areas of biomedical diagnostics and sensing, neuroscience, and prosthetics. Furthermore, this special issue highlights the rapid progress in all areas of bioelectronics and includes contributions that explore the interfaces between electronics, materials science, and other engineering disciplines, as well as biochemistry, biophysics, and general biology.
Turbulent self-organization driven by global ideal interchange modes in a dipole-confined plasma is explored with self-consistent, whole-plasma simulations using a flux-tube averaged magnetohydrodynamic model in dipole magnetic geometry. We show the existence of robust particle pinch driven by ideal interchange-mode fluctuations, in which the particles are transported up the density gradient. It is found that the plasma profiles in a dipole field spontaneously relax to a marginally stable state as centrally peaked pressure and density are created by global interchange-mode transport.
The rotation profile of a magnetized plasma cylinder composed of multiple fluids is investigated analytically, expanding on previous results. The analytic steady-state solution is used as a benchmark for a time-dependent multiple-fluid finite-difference code, MITNS: Multiple-Ion Transport Numerical Solver. Magnetic field evolution is taken into account, both analytically and numerically. Its details are shown to be of importance when particles are allowed out of the domain. MITNS reproduces the asymptotic expansion results for a small parameter $δ<<<1$. For $\sqrt{m_elm_i} ~ δ << 1$ , a slightly different regime, dominated by viscosity-induced transport of ions, is found numerically and analytically. Finally, this verification supports the use of this code for more complex time-dependent calculations in the future. Additionally, we derive the angular velocity profile of each species due to radial particle and charge fluxes of various strengths.
Here, we describe mathematical methods based on optimizing a modified non-linear flux function (MFF) to evaluate whether odd-parity perturbations affect the local closure of magnetic field lines in field-reversed configurations. Using the MFF methodology, quantitative formulas are derived that provide the shift of the field minimum and the threshold for field-line opening, a discontinuous change in field topology.
Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, in this paper, we report the growth of ultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride (GaN) by pulsed laser deposition. Comprehensive spectroscopic (core level and valence band x-ray photoelectron spectroscopy, Fourier-transform infrared spectroscopy, and Raman) and microscopic (atomic force microscopy and scanning transmission electron microscopy) characterizations confirm the growth of BN thin films on GaN. Optically, we observed that the BN/GaN heterostructure is second-harmonic generation active. Moreover, we fabricated the BN/GaN heterostructure-based Schottky diode that demonstrates rectifying characteristics, lower turn-on voltage, and an improved breakdown capability (~234 V) as compared to GaN (~168 V), owing to the higher breakdown electrical field of BN. Our approach is an early step toward bridging the gap between wide and ultrawide-bandgap materials for potential optoelectronics as well as next-generation high-power electronics.
Heterogeneous integration techniques allow the coupling of highly lattice-mismatched solid-state membranes, including semiconductors, oxides, and two-dimensional materials, to synergistically fuse the functionalities. The formation of heterostructures generally requires two processes: the combination of crystalline growth and a non-destructive lift-off/transfer process enables the formation of high-quality heterostructures. Although direct atomic interaction between the substrate and the target membrane ensures high-quality growth, the strong atomic bonds at the substrate/epitaxial film interface hinder the non-destructive separation of the target membrane from the substrate. Alternatively, a 2D material-coated compound semiconductor substrate can transfer the weakened (but still effective) surface potential field of the surface through the 2D material, allowing both high-quality epitaxial growth and non-destructive lift-off of the grown film. This Perspective reviews 2D/3D heterogeneous integration techniques, along with applications of III–V compound semiconductors and oxides. Here, the advanced heterogeneous integration methods offer an effective method to produce various freestanding membranes for stackable heterostructures with unique functionalities that can be applied to novel electrical, optoelectronic, neuromorphic, and bioelectronic systems.
A systematic numerical study is carried out, computing and comparing the plasma response to the resonant magnetic perturbation (RMP) field, applied for controlling edge localized modes (ELMs), in a series of tokamak plasmas with varying aspect ratio and utilizing the MARS-F code. The aspect ratio is scanned either by varying the plasma major radius at a fixed minor radius or by varying the latter while fixing the former. Both approaches yield similar results when compared in terms of quantities with proper normalizations. In general, a non-monotonic dependence of the resonant response field (normalized by the vacuum counterpart) near the plasma edge is found with varying aspect ratio, indicating that a given ELM control coil current configuration strongly favors plasmas with a certain aspect ratio. This optimal aspect ratio, on the other hand, depends on the toroidal as well as poloidal (i.e., coil phasing) spectra of the applied RMP field. The equilibrium (edge) safety factor, the plasma shape, and the plasma toroidal flow are all fixed to ensure that the effects identified here are predominantly due to the plasma aspect ratio.
Although particle–laden electrostatic discharges are widely used in laboratories as well as in industrial applications, the mechanism of particle lifting for particles initially at rest in such highly unsteady systems is not well understood. A multiphase gas–particle solver is developed using the multiphase particle-in-cell (MP-PIC) approach to emulate the interaction of a compressible shock-dominated gas phase with the dense particle phase. First, the two-way coupled solver is initially used to study the interaction of a planar traveling shock with a vertical curtain of particulates. The gas and particle phase evolution was found to be in good agreement with a similar experimental study in Ling et al. [Phys. Fluids 24, 113301 (2012)]. Second, the MP-PIC code is used to study the interaction of an expanding blast wave with a thick bed of particles. The simulation considered forces such as quasi-steady drag, pressure-gradient, added-mass, Saffman, and Magnus forces. We observe that the vertical liftoff particles close to the shock impingement point in this configuration are associated with the quasi-steady drag, pressure gradient, and added-mass forces. Also, the Saffman lift and Magnus forces contribute to lifting particles located radially farther away from the shock impingement point. In addition, the study finds a decrease in particle lifting efficiency with decreasing plasma kernel length and shock strength.
In this study, we demonstrate the ability of polarity inversion of sputtered aluminum scandium nitride thin films through post-fabrication processes with domain widths as small as 220 nm at a periodicity of 440 nm. An approach using photo- and electron-beam lithography to generate sub-quarter micrometer feature size with adjustable duty cycle through a lift-off process is presented. Here, the film with a coercive field $E_c^+$ of 5.35 MV/cm was exercised first with a 1 kHz triangular double bipolar wave and ultimately poled with a 0.5 kHz double monopolar wave using a Radiant Precision Premier II tester. The metal polar (M-polar) and nitrogen polar (N-polar) domains were identified and characterized through potassium hydroxide wet etching as well as piezoresponse force microscopy (PFM). Well-distinguished boundaries between the oppositely polarized domain regions were confirmed through the phase diagram of the PFM results. The relationship between the electrode width, poling voltage, and domain growth was experimentally studied and statistically analyzed, where 7.96 nm/V domain width broadening vs escalating poling voltage was observed. This method produces extremely high domain spatial resolution in III-nitride materials via poling and is transferable to a CMOS-compatible photolithography process. The spatial resolution of the periodically poled Al 0.68 Sc 0.32 N is suitable for second-harmonic generation of deep ultraviolet through quasi-phase-matching and RF MEMS operating in the X-Band spectrum.
A central issue in the design of tokamaks or stellarators is the coils that produce the external magnetic fields. The freedom that remains unstudied in the design of coils is enormous. This freedom could be quickly studied computationally at low cost with high reliability. In particular, the space between toroidal field and modular coils that blocks access to the plasma chamber could be increased by a large factor. The concept of current-potential patches, which was developed in Todd Elder's thesis, provides a method for separating the study of the feasibility of coils with attractive physics properties from the engineering design of specific coils. In addition to enhanced accessibility, coils can be designed for increased plasma-coil separation, insensitivity to coil position errors, and plasma control.
The external-kink stability of a toroidal plasma surrounded by a rigid resistive wall is investigated. The well-known analysis of Haney and Freidberg is rigorously extended to allow for a wall that is sufficiently thick that the thin-shell approximation does not necessarily hold. A generalized Haney–Freidberg formula for the growth-rate of the resistive wall mode is obtained. Thick-wall effects do not change the marginal stability point of the mode but introduce an interesting asymmetry between growing and decaying modes. Growing modes have growth-rates that exceed those predicted by the original Haney–Freidberg formula. On the other hand, decaying modes have decay-rates that are less than those predicted by the original formula. The well-known Hu–Betti formula for the rotational stabilization of the resistive wall mode is also generalized to take thick-wall effects into account. Increasing wall thickness facilitates the rotational stabilization of the mode, because it decreases the critical toroidal electromagnetic torque that the wall must exert on the plasma. On the other hand, the real frequency of the mode at the marginal stability point increases with increasing wall thickness.
The carrier-envelope phase (CEP) is a key parameter for attosecond waveform control of ultrashort laser pulses. For laser systems with high repetition rates, however, single-shot CEP detection is still challenging. Building on recent findings on phase detection with electric current generation in gases, we show that with an optimized detection method, a long-term stable single-shot phase detection is feasible. We investigate the achievable performance depending on various parameters such as pulse duration, gas pressure, or incident intensity. The latter exhibits a regime where the saturation of the ionization process boosts the phase sensitivity of the signal, which is elucidated by numerical calculations.
Advances in wurtzite nitride ferroelectrics of Al 1-x M x N ( M = Sc or B) have led to novel capabilities, which must be integrated into existing fabrication processes. In the case of electronics operating > 200°C, a movement toward SiC-based platforms enables better performance over conventional Si, primarily due to the higher bandgap and lower intrinsic carrier concentration of SiC. Hence, the challenge is to develop a deposition process to integrate Al 1-x M x M x N ferroelectrics with elevated temperature-compatible materials for high temperature electronics such as the non-volatile memory component. We demonstrate epitaxial Al M N/Mo/SiC heterostructures, which provides both the crystalline and surface features that promote high-quality ferroelectric nitride film growth. Omega scans of the Mo (110) reflection exhibit a full width at half max of < 0.02° (40 arc sec) and the (0002) peak of the subsequently grown nitride film had a value of 1.1° for 160 nm thick Al 0.7 Sc 0.3 N and 1.3° for 400 nm thick Al 0.94 B 0.06 N. The crystallographic relationships found between the Al M N, Mo, and SiC layers indicate an advancement in sputter deposition of epitaxial films. Ferroelectric switching is also shown at 400 °C in both samples via polarization-electric field hysteresis and pulsed measurements, which exhibited P r values >100 μC cm -2 and E c between 3 and 4 M V cm -1 , despite a large presence of oxygen in both Al M N films ranging between 4 and 5 at.%, revealed by compositional analysis. This study demonstrates the process for synthesizing high-crystal quality ferroelectric nitride films, which can be used in extremely high temperature applications.
Particularly for aneutronic fusion schemes, it is advantageous to manipulate the fuel species differently from one another and to expel ash promptly. The ponderomotive effect can be used to selectively manipulate particles. It is commonly a result of particle–wave interactions and has a complex dependence on the particle charge and mass, enabling species selectivity. If the plasma is rotating, e.g., due to E x B motion, the ponderomotive effect can be generated using static (i.e., time-independent) perturbations to the electric and magnetic fields, which can be significantly cheaper to produce than time-dependent waves. We propose that this feature can be particularly useful in rotating mirror machines where mirror confinement can be enhanced by rotation, both through centrifugal confinement and additionally through a ponderomotive interaction with a static azimuthal perturbation. We identify specific static perturbations that generate a ponderomotive barrier and other perturbations that can generate either a repulsive barrier or an attractive ponderomotive well, which can be used to attract particles of a certain species while repelling another. We identify the regimes in which the ponderomotive potential can enhance net plasma confinement and the regime in which plasma confinement is not enhanced. The viability of each of these effects is found to be dependent on the specifics of the rotation profile and the resultant dispersion relation in the rotating plasma.
The development of effective neutron shielding materials is of paramount importance for the progression of fusion technologies with the aim of producing clean and sustainable energy for future generations. This study demonstrates the successful fabrication of a promising candidate material for shielding applications, hafnium hydride, through the powder metallurgy process. Powder metallurgy fabrication resulted in the production of 91% dense, crack-free, ε-phase HfH 2 pellets with a hydrogen-to-metal ratio of 1.89 to 2.00. Resonant ultrasound spectroscopy (RUS) was used to measure a Young’s modulus of 34.52 ± 2.70 GPa and a shear modulus of 12.25 ± 0.18 GPa. Nanoindentation techniques have been used to establish a hardness value of 4.45 ± 1.63 GPa, and a Young’s modulus of 47.8 ± 6.4 GPa was determined using Poison’s ratio from RUS. Hydrogen release was measured using thermogravimetric analysis and appeared to occur in three different regimes as the sample transitioned through the ε- and δ-phases. Heat capacity matched literature data up to 600 K, after which a rapid increase was observed due to phase transformations occurring with hydrogen loss.
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