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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,315 records · Page 73
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

An Advanced Cooling Device for Concentrated Photovoltaic Systems

Concentrated photovoltaics (CPV) have the potential to significantly enhance the energy conversion utilization of solar panels and reduce solar generation costs, making them a crucial area of advancement in solar power generation technology. However, the concentration of sunlight can lead to overheating of solar panels, resulting in a notable reduction in both the efficiency of solar power generation and the lifespan of the panels. This challenge remains the predominant technical hurdle that hinders the application of concentrated photovoltaic power generation technology. In this study, we propose a new cooling method for concentrated photovoltaic power generation systems via an integrated approach of incorporating Phase-Change Thermal Storage (PCTS) and Thermoelectric Generator (TEG) technology. This new method not only enhances the overall system's electricity generation efficiency but also effectively resolves the technical challenge of concentrated photovoltaic panel overheating issues, ensuring the continuity of concentrated photovoltaic power generation and extending the lifespan of solar panels and their components. In order to make full use of the wasted heat generated by photovoltaic power generation and effectively improve the power generation efficiency of the system, this work developed a phase change heat storage device based on a phase change material. This device uses the temperature difference between day and night to recover wasted heat from photovoltaic power generation. Through integration with the thermoelectric power generation system, thermal energy can be converted into electrical energy. In addition, the Peltier effect of thermoelectric materials is used to construct a photovoltaic panel overheating protection system, which significantly improves the reliability and service life of the system.

14 SOLAR ENERGY↗
DOE OSTI2022

Experimental Setup for Grid Control Device Software Updates in Supply Chain Cyber-Security

Supply chain cyberattacks that exploit insecure third-party software are a growing concern for the security of the electric power grid. These attacks seek to deploy malicious software in grid control devices during the fabrication, shipment, installation, and maintenance stages, or as part of routine software updates. Malicious software on grid control devices may inject bad data or execute bad commands, which can cause blackouts and damage power equipment. This paper describes an experimental setup to simulate the software update process of a commercial power relay as part of a hardware-in-the-loop simulation for grid supply chain cyber-security assessment. The laboratory setup was successfully utilized to study three supply chain cyber-security use cases.

Keller, Joseph↗
DOE OSTI2022

Open-Source Architecture for Multi-Party Update Verification for Data Acquisition Devices

Power grids are integral parts of modern daily life and are increasingly under cyberattack. Common software update processes for grid control devices rely on only one organization to provide verification. This paper roposes a multi-signature software update process to help better secure data acquisition devices from malicious actions by using standard cryptosystems such as TLS. A prototype system build on Linux and off-the-shelf hardware has shown successful update and attack prevention with our customized multi-party update software.

Newberg, Benjamin↗
DOE OSTI2023

Conservation Voltage Reduction with Distributed Energy Resource Management System, Grid-Edge, and Legacy Devices

Distribution utilities use conservation voltage reduction (CVR) to obtain energy savings and lower peak demand by reducing bus voltages. Traditionally, the CVR is accomplished by controlling the legacy assets such as load tap changers, voltage regulators, and capacitor banks. The deployment of the advanced distribution management system (ADMS) and distributed energy resource management system (DERMS) enables the integration of distributed energy resources into the distribution networks and provide the grid services including CVR. This paper studies the coordinated operation of an ADMS and a DERMS in achieving CVR and voltage regulation. A commercial ADMS uses legacy devices and Edge-of-Network Grid Optimization (ENGO) devices to obtain energy savings through CVR. A prototype DERMS dispatches the photovoltaic smart inverters based on real-time optimal power low to ensure voltage regulation across the feeder. The results show that the coordinated operation of ADMS and DERMS is effective in achieving CVR and voltage regulation. Specifically, energy savings of up to 4.7% are observed in the real utility distribution system used in this study.

advanced distribution management system↗
DOE OSTI2023

Towards Redefining the Reproducibility in Quantum Computing: A Data Analysis Approach on NISQ Devices

Although the building of quantum computers has kept making rapid progress in recent years, noise is still the main challenge for any application to leverage the power of quantum computing. Existing works addressing noise in quantum devices proposed noise reduction when deploying a quantum algorithm to a specified quantum computer. The reproducibility issue of quantum algorithms has been raised since the noise levels vary on different quantum computers. Importantly, existing works largely ignore the fact that the noise of quantum devices varies as time goes by. Therefore, reproducing the results on the same hardware will even become a problem. We analyze the reproducibility of quantum machine learning (QML) algorithms based on daily model training and execution data collection. Our analysis shows a correlation between our QML models’ test accuracy and quantum computer hardware’s calibration features. We also demonstrate that noisy simulators for quantum computers are not a reliable tool for quantum machine learning applications.

Senapati, Priyabrata↗
DOE OSTI2022

Model-based interface design for smart field-device integration

Operational complexity is ever-increasing for electric utilities that face challenges including integration of DERs, customer expectation of energy choices, the proliferation of non-utility-owned resources, new business models with energy service providers, and new technology with IT/OT convergence. To maintain and improve the quality of operations, planning, and decision-making in general, utilities need to manage and navigate the complexity. Managing complexity requires a modular, scalable, and flexible solution. Connecting large amounts of DERs and introducing new services requires increased grid control and evolving applications. In this paper, we show an approach utilizing model-based standardized interfaces that simplifies integration and deployment of new algorithms and smart field devices for interoperability across legacy or new systems. A modular design is presented for a reference implementation of widely used DNP3 and IEEE 2030.5 interfaces within an open-source, standards-based data integration platform for integration of smart field devices with independently developed, best-of-breed applications.

Model-driven development, system integration, smar↗
DOE OSTI2026

DISARM: Target Electronic Device Informed Mitigation of Software Runtime Side-Channel Vulnerabilities

Program runtime/timing attacks exploit variations in a program’s execution times to extract sensitive information from the program (e.g. encryption keys, sensitive variable data, intellectual property). State-of-the-art solutions to runtime side-channel attacks attempt to balance the execution time of the sensitive code for different control flow paths to eliminate the timing leakage. However, during the mitigation process, most techniques do not consider the underlying hardware/device on which the target program is supposed to run on. This can lead to over-fixing (unnecessary extra operations), under-fixing (not solving the imbalance properly), and even failures. Here, we propose DISARM, a joint hardware-software methodology (unlike any existing solution) for mitigating runtime side-channel vulnerabilities that utilizes timing values from real embedded devices to generate targeted software fixes. We implement DISARM to support C/C++/Java source codes and validate it across 22 standard benchmarks. DISARM outperforms state-of-the-art solutions such as PENDULUM and DifFuzzaR in terms of execution time overhead, code size overhead, and correctness on five different embedded/edge devices.

Timing/runtime side-channel↗
DOE OSTI2021

Smart Meter Pinging and Reading Through AMI Two-Way Communication Networks to Monitor Grid Edge Devices and DERs

Today’s power distribution system is changing to a power-electronics-enabled distribution system, especially with the increasing penetration of distributed energy resources (DERs). To monitor and manage those electronic devices and DERs at the grid edge, the advanced metering infrastructure (AMI) with two-way communications presents great potential. At present, extensive research explores the upstream communication from smart meters to electric utilities (e.g., meter reading) but few examine the downstream communication from the utilities to smart meters (e.g., meter pinging). This article discusses the AMI two-way communication and its recent industrial practice in the U.S., especially for applying the smart meter pinging functionality to monitor grid-edge devices and DERs. This paper then develops the two-way communication model and the network calculus method to quantify the impact of the two-way communication on the AMI network. In the end, the proposed method is validated with ns-3 simulation using the modified 13-node test feeder and real-world feeder systems.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2021

Characterization and differentiation of aluminum powders used in improvised explosive devices. Part 2: Micromorphometric method refinement and preliminary statistical analysis

Abstract Aluminum (Al) powder is commonly encountered in improvised explosive devices (IEDs) as a metallic fuel due to its availability and low cost. Although available commercially in powder form, amateur bomb‐makers also produce their own Al powder via simple methods found online. In order to provide investigative leads and forensic intelligence, it is important to evaluate not only the composition of homemade devices, but also to distinguish between the various forms of Al powder they contain. To achieve this goal, a method using automated microscopy in combination with statistical techniques has been demonstrated to have the potential to provide source discrimination and investigative leads in source attribution of Al powders in IEDs. The present research refined this method and investigated 59 industrially and amateurly produced Al powder sources with seven subsamples per source using two traditional linear discriminant analyses (LDA), one with a standard data split for training and testing, and another using leave‐one‐out cross‐validation. Averaging the classification accuracies for the two LDA‐based analyses, LDA has the ability to correctly classify 59.26%, 83.35%, and 80.69% of the samples based on their powder source, type, and production method, respectively. This classification accuracy represents a 3407%, 317%, and 61.38% increase in accuracy from random class assignment, respectively. Further, in most instances of incorrect data attribution to a particular source, the subsample has been misidentified with another sample of the same powder type or production method.

Ommen, Danica M.↗
DOE OSTI2022

Quantum thermodynamic devices: From theoretical proposals to experimental reality

Thermodynamics originated in the need to understand novel technologies developed by the Industrial Revolution. However, over the centuries, the description of engines, refrigerators, thermal accelerators, and heaters has become so abstract that a direct application of the universal statements to real-life devices is everything but straight forward. Furthermore, the recent, rapid development of quantum thermodynamics has taken a similar trajectory, and, e.g., “quantum engines” have become a widely studied concept in theoretical research. However, if the newly unveiled laws of nature are to be useful, we need to write the dictionary that allows us to translate abstract statements of theoretical quantum thermodynamics to physical platforms and working mediums of experimentally realistic scenarios. To assist in this endeavor, this review is dedicated to provide an overview over the proposed and realized quantum thermodynamic devices and to highlight the commonalities and differences of the various physical situations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Heterovalent semiconductor structures and devices grown by molecular beam epitaxy

Heterovalent structures consisting of group II-VI/group III-V compound semiconductors offer attractive properties, such as a very broad range of bandgaps, large conduction band offsets, high electron and hole mobilities, and quantum-material properties such as electric-field-induced topological insulator states. These properties and characteristics are highly desirable for many electronic and optoelectronic devices as well as potential condensed-matter quantum-physics applications. Here, we provide an overview of our recent studies of the MBE growth and characterization of zincblende II-VI/III-V heterostructures as well as several novel device applications based on different sets of these materials. By combining materials with small lattice mismatch, such as ZnTe/GaSb (Δa/a~0.13%), CdTe/InSb (Δa/a~0.05%), and ZnSe/GaAs (Δa/a~0.26%), epitaxial films of excellent crystallinity were grown once the growth conditions had been optimized. Cross-sectional observations using conventional and atomic-resolution electron microscopy revealed coherent interfaces and close to defect-free heterostructures. Measurements across CdTe/InSb interfaces indicated a limited amount (~1.5 nm) of chemical intermixing. Results for ZnTe/GaSb distributed Bragg reflectors, CdTe/Mg x Cd 1-x Te double heterostructures, and CdTe/InSb two-color photodetectors are briefly presented, and the growth of a rock salt/zincblende PbTe/CdTe/InSb heterostructure is also described.

Materials Science↗
DOE OSTI2023

Ultrathin stable Ohmic contacts for high-temperature operation of β -Ga2O3 devices

Beta gallium oxide (β-Ga2O3) shows significant promise in high-temperature, high-power, and sensing electronics applications. However, long-term stable metallization layers for Ohmic contacts at high temperatures present unique thermodynamic challenges. The current most common Ohmic contact design based on 20 nm of Ti has been repeatedly demonstrated to fail at even moderately elevated temperatures (300–400 °C) due to a combination of nonstoichiometric Ti/Ga2O3 interfacial reactions and kinetically favored Ti diffusion processes. Here, we demonstrate stable Ohmic contacts for Ga2O3 devices operating up to 500–600 °C using ultrathin Ti layers with a self-limiting interfacial reaction. The ultrathin Ti layer in the 5 nm Ti/100 nm Au contact stack is designed to fully oxidize while forming an Ohmic contact, thereby limiting both thermodynamic and kinetic instability. This novel contact design strategy results in an epitaxial conductive anatase titanium oxide interface layer that enables low-resistance Ohmic contacts that are stable both under long-term continuous operation (>500 h) at 600 °C in vacuum (≤10−4 Torr), as well as after repeated thermal cycling (15 times) between room temperature and 550 °C in flowing N2. This stable Ohmic contact design will accelerate the development of high-temperature devices by enabling research focus to shift toward rectifying interfaces and other interfacial layers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Heteroepitaxial growth of Ga2O3 on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga2O3 power devices

We report on the growth of monoclinic β- and orthorhombic κ-phase Ga2O3 thin films using liquid-injection metal-organic chemical vapor deposition on highly thermally conductive 4H-SiC substrates using gallium (III) acetylacetonate or tris(2,2,6,6-tetramethyl-3,5-heptanedionato) gallium (III). Both gallium precursors produced the β phase, while only the use of the latter led to growth of κ-Ga2O3. Regardless of the used precursor, best results for β-Ga2O3 were achieved at a growth temperature of 700 °C and O2 flows in the range of 600–800 SCCM. A relatively narrow growth window was found for κ-Ga2O3, and best results were achieved for growth temperatures of 600 °C and the O2 flow of 800 SCCM. While phase-pure β-Ga2O3 was prepared, κ-Ga2O3 showed various degrees of parasitic β phase inclusions. X-ray diffraction and transmission electron microscopy confirmed a highly textured structure of β- and κ-Ga2O3 layers resulting from the presence of multiple in-plane domain orientations. Thermal conductivities of 53 nm-thick β-Ga2O3 (2.13 + 0.29/−0.51 W/m K) and 45 nm-thick κ-Ga2O3 (1.23 + 0.22/−0.26 W/m K) were determined by transient thermoreflectance and implications for device applications were assessed. Presented results suggest great potential of heterointegration of Ga2O3 and SiC for improved thermal management and reliability of future Ga2O3-based high power devices.

Materials Science↗
DOE OSTI2024

Synthesis and electrical transport properties of superconducting platinum silicide thin films and devices

Here, we evaluate the material characteristics of superconducting platinum silicide (PtSi) thin films as candidate materials for superconducting quantum information devices compatible with silicon technology. These films were synthesized using magnetron sputtering under ultrahigh vacuum conditions, followed by rapid thermal annealing. Polycrystalline PtSi films synthesized by this method have the favorable properties of superconducting critical temperature of 0.95 K and relatively long zero-temperature Ginzburg-Landau coherence length of 76 nm. We further studied coplanar microbridge devices fabricated by electron beam lithography and chlorine-free reactive ion etching, finding that the temperature-dependent critical current density follows the Ginzburg Landau depairing mechanism.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Prospects for Antiferromagnetic Spintronic Devices

This article examines recent advances in the field of antiferromagnetic spintronics from the perspective of potential device realization and applications. We discuss advances in the electrical control of antiferromagnetic order by current-induced spin–orbit torques, particularly in antiferromagnetic thin films interfaced with heavy metals. We also review possible scenarios for using voltage-controlled magnetic anisotropy as a more efficient mechanism to control antiferromagnetic order in thin films with perpendicular magnetic anisotropy. Next, we discuss the problem of electrical detection (i.e., readout) of antiferromagnetic order and highlight recent experimental advances in realizing anomalous Hall and tunneling magnetoresistance effects in thin films and tunnel junctions, respectively, which are based on noncollinear antiferromagnets. Understanding the domain structure and dynamics of antiferromagnetic materials is essential for engineering their properties for applications. For this reason, we then provide an overview of imaging techniques as well as micromagnetic simulation approaches for antiferromagnets. Finally, we present a perspective on potential applications of antiferromagnets for magnetic memory devices, terahertz sources, and detectors.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Ultra compact Bragg grating devices with broadband selectivity

Current silicon waveguide Bragg gratings typically introduce perturbation to the optical mode in the form of modulation of the waveguide width or cladding. However, since such a perturbation approach is limited to weak perturbations to avoid intolerable scattering loss and higher-order modal coupling, it is difficult to produce ultra-wide stopbands. In this Letter, we report an ultra-compact Bragg grating device with strong perturbations by etching nanoholes in the waveguide core to enable an ultra-large stopband with apodization achieved by proper location of the nanoholes. With this approach, a 15 µm long device can generate a stopband as wide as 110 nm that covers the entire C + L band with a 40 dB extinction ratio and over a 10 dB sidelobe suppression ratio (SSR). Similar structures can be further optimized to achieve higher SSR of > <#comment/> 17 d B for a stopband of about 80 nm.

Li, Ang (ORCID:0000000232251280)↗
DOE OSTI2022

Hybrid quantum nanophotonic devices with color centers in nanodiamonds [Invited]

Optically active color centers in nanodiamonds offer unique opportunities for generating and manipulating quantum states of light. These mechanically, chemically, and optically robust emitters can be produced in mass quantities, deterministically manipulated, and integrated with a variety of quantum device geometries and photonic material platforms. Nanodiamonds with deeply sub-wavelength sizes coupled to nanophotonic structures feature a giant enhancement of light-matter interaction, promising high bitrates in quantum photonic systems. We review the recent advances in controlled techniques for synthesizing, selecting, and manipulating nanodiamond-based color centers for their integration with quantum nanophotonic devices.

Sahoo, Swetapadma (ORCID:0000000179281391)↗