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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,297 records · Page 72
All sourcesNASA NTRSDOE OSTI
NASA NTRS2000

Simulation of Aluminum Micro-mirrors for Space Applications at Cryogenic Temperatures

Closed form and finite element models are developed to predict the device response of aluminum electrostatic torsion micro-mirrors fabricated on silicon substrate for space applications at operating temperatures of 30K. Initially, closed form expressions for electrostatic pressure arid mechanical restoring torque are used to predict the pull-in and release voltages at room temperature. Subsequently, a detailed mechanical finite element model is developed to predict stresses and vertical beam deflection induced by the electrostatic and thermal loads. An incremental and iterative solution method is used in conjunction with the nonlinear finite element model and closed form electrostatic equations to solve. the coupled electro-thermo-mechanical problem. The simulation results are compared with experimental measurements at room temperature of fabricated micro-mirror devices.

Kuhn, J. L.↗
DOE OSTI2022

A cryogenic torsion balance using a liquid-cryogen free, ultra-low vibration cryostat

We describe a liquid-cryogen free cryostat with ultra-low vibration levels, which allows for continuous operation of a torsion balance at cryogenic temperatures. The apparatus uses a commercially available two-stage pulse-tube cooler and passive vibration isolation. Here, the torsion balance exhibits torque noise levels lower than room temperature thermal noise by a factor of about four in the frequency range of 3–10 mHz, limited by residual seismic motion and by radiative heating of the pendulum body. In addition to lowering thermal noise below room-temperature limits, the low-temperature environment enables novel torsion balance experiments. Currently, the maximum duration of a continuous measurement run is limited by accumulation of cryogenic surface contamination on the optical elements inside the cryostat.

47 OTHER INSTRUMENTATION↗
NASA NTRS2012

670-GHz Down- and Up-Converting HEMT-Based Mixers

A large category of scientific investigation takes advantage of the interactions of signals in the frequency range from 300 to 1,000 GHz and higher. This includes astronomy and atmospheric science, where spectral observations in this frequency range give information about molecular abundances, pressures, and temperatures of small-sized molecules such as water. Additionally, there is a minimum in the atmospheric absorption at around 670 GHz that makes this frequency useful for terrestrial imaging, radar, and possibly communications purposes. This is because 670 GHz is a good compromise for imaging and radar applications between spatial resolution (for a given antenna size) that favors higher frequencies, and atmospheric losses that favor lower frequencies. A similar trade-off applies to communications link budgets: higher frequencies allow smaller antennas, but incur a higher loss. All of these applications usually require converting the RF (radio frequency) signal at 670 GHz to a lower IF (intermediate frequency) for processing. Further, transmitting for communication and radar generally requires up-conversion from IF to the RF. The current state-of-the-art device for performing the frequency conversion is based on Schottky diode mixers for both up and down conversion in this frequency range for room-temperature operation. Devices that can operate at room temperature are generally required for terrestrial, military, and planetary applications that cannot tolerate the mass, bulk, and power consumption of cryogenic cooling. The technology has recently advanced to the point that amplifiers in the region up to nearly 1,000 GHz are feasible. Almost all of these have been based on indium phosphide pseudomorphic high-electron mobility transistors (pHEMTs), in the form of monolithic microwave integrated circuits (MMICs). Since the processing of HEMT amplifiers is quite differ en t from that of Schottky diodes, use of Schottky mixers requires separate MMICs for the mixers and amplifiers. Fabrication of all the down-/up-conversion circuitry on single MMICs, using a ll-HEMT circuits, would constitute a major advance in circuit simplicity.

Schlecht, Enrich T.↗
NASA NTRS1998

Ultra-Fast Fracture Strength of Advanced Ceramics at Elevated Temperatures

An attempt was made to determine elevated-temperature, 'ultra'-fast fracture strengths of one alumina, two silicon nitrides and one silicon carbide by using constant stress-rate ('dynamic fatigue') testing with a series of 'ultra'-fast test rates. Of the materials tested, the alumina exhibited a convergence of strength at stress rates below 3.3 x 10(exp 4) MPa/s. The strength approached approximately the room-temperature inert strength. By contrast, the silicon nitrides and silicon carbide did not reveal a strength approach, but exhibited elevated-temperature strengths 10 and 20% lower than their respective room-temperature strengths. Although the analytical results imply that the elevated-temperature 'inert' strength of a ceramic material can be obtained by using sufficiently high stress rates, the experimental testing rates were only sufficient to demonstrate convergence for the alumina.

Choi, Sung R.↗
DOE OSTI2020

Abnormally Low Activation Energy in Cubic Na3SbS4 Superionic Conductor

Inorganic Na-ion superionic conductors play a vital role in all-solid-state Na batteries that operate at room temperature. Sodium thioantimonate (Na3SbS4), a popular sulfide-based solid electrolyte, has attracted serious attention due to its advantages of high ionic conductivity at room temperature and impressive chemical stability under ambient conditions. Much research detailing Na3SbS4 focused on its synthetic approaches and interfacial stability against Na metal, yet, there is limited information elucidating a fundamental understanding of the Na- ion diffusion mechanisms in Na3SbS4 with different crystal structures (e.g., tetragonal and cubic). Herein, we combine real-time electrochemical impedance measurements with theoretical simulations based on density functional theory and in situ quasi-elastic neutron scattering to study the Na-ion conductive properties of Na3SbS4 during its phase transition from a tetragonal to cubic structure. Although there is a slight change in the lattice parameters, the energy barrier for Na-ion diffusion in the tetragonal structure was determined to be much larger (5-10 times) than that in the cubic structure from both theoretical and experimental perspectives. The high degree of symmetry in cubic Na3SbS4 leads to less interatomic correlations between Na and S(Sb) atoms, a shorter jump distance (2.85 angstrom), and a larger diffusion coefficient. This research provides insight into understanding the Na-ion diffusion in solid electrolytes with phase transitions and provides fundamental guidance for designing novel solid-state Na-ion conductors.

Zhang, Qian↗
DOE OSTI2026

Crystallization of the Transdimensional Electron Liquid

Wigner crystallization of free electrons at room temperature has been explored theoretically for a new class of metallic ultrathin (transdimensional) materials whose properties can be controlled by their thickness. Our calculations of the melting surface, critical electron density and temperature explain consistently the experimental data reported previously. We show that by reducing the material thickness one can Wigner-crystallize free electrons at room temperature to get them pinned onto a two-dimensional triangular lattice of a supersolid inside of the crystalline material. Such a solid melts and freezes reversibly with increase and decrease of electron doping or temperature, whereby its resistivity behaves opposite to the free electron gas model predictions.

Wigner crystal↗
DOE OSTI2022

An optoelectronic heterostructure for neuromorphic computing: CdS/V 3 O 5

Nonvolatile resistive switching is one of the key phenomena for emerging applications in optoelectronics and neuromorphic computing. In most of the cases, an electric field is applied to a two terminal dielectric material device and leads to the formation of a low resistance filament due to ion migration. However, the stochastic nature of the ion migration can be an impediment for the device robustness and controllability, with uncontrolled variations of high and low resistance states or threshold voltages. Here, we report an optically induced resistive switching based on a CdS/V 3 O 5 heterostructure which can overcome this issue. V 3 O 5 is known to have a second order insulator to metal transition around T c ≈ 415 K, with an electrically induced threshold switching at room temperature. Upon illumination, the direct transfer of the photoinduced carriers from the CdS into V 3 O 5 produces a nonvolatile resistive switching at room temperature. The initial high resistance can be recovered by reaching the high temperature metallic phase, i.e., temperatures above T c . Interestingly, this resistive switching becomes volatile around the T c . In conclusion, by locally manipulating the volatile and nonvolatile resistive switching using electric field and light, this system is a promising platform for hardware based neuromorphic computing implementations.

97 MATHEMATICS AND COMPUTING↗
NASA NTRS1974

Effect of proof testing on the flaw growth characteristics of 304 stainless steel

The effects of proof overload frequency and magnitude on the cyclic crack growth rates of 304 stainless steel weldments were investigated. The welding procedure employed was typical of those used on over-the-road cryogenic vessels. Tests were conducted at room temperature with an overload ratio of 1.50 to determine the effect of overload frequency. Effect of overload magnitude was determined from tests where a room temperature overload was applied between blocks of 1000 cycles applied at 78 K (-320 F). The cyclic stress level used in all tests was typical of the nominal membrane stress generally encountered in full scale vessels. Test results indicate that judicious selection of proof overload frequency and magnitude can reduce crack growth rates for cyclic stress levels.

Finger, R. W.↗
NASA NTRS1991

The influences of fluorine and process variations on polysilicon film stress and MOSFET hot carrier effects

The use of fluorinated gate oxides may provide an improvement in nMOSFET reliability by enhancing hot carrier resistance. In order to clarify the mechanisms by which polysilicon processing and fluorination influence the oxide behavior, a matrix of nMOSFET structures was prepared using various processing, doping, and implantation strategies. These structures were evaluated for crystalline morphology and chemical element distribution. Mechanical stress measurements were taken on the polysilicon films from room temperature to cryogenic temperature. These examinations showed that fluorination of a structure with randomly oriented polysilicon can reduce residual mechanical stress and improve hot carrier resistance at room temperature.

Lowry, Lynn E.↗
NASA NTRS2002

Accelerated Near-Threshold Fatigue Crack Growth Behavior of an Aluminum Powder Metallurgy Alloy

Fatigue crack growth (FCG) research conducted in the near threshold regime has identified a room temperature creep crack growth damage mechanism for a fine grain powder metallurgy (PM) aluminum alloy (8009). At very low DK, an abrupt acceleration in room temperature FCG rate occurs at high stress ratio (R = Kmin/Kmax). The near threshold accelerated FCG rates are exacerbated by increased levels of Kmax (Kmax less than 0.4 KIC). Detailed fractographic analysis correlates accelerated FCG with the formation of crack-tip process zone micro-void damage. Experimental results show that the near threshold and Kmax influenced accelerated crack growth is time and temperature dependent.

Piascik, Robert S.↗
DOE OSTI2025

Chemically Generated Liquid Sulfur Droplets at Room and Subzero Temperatures

The liquid phase of sulfur has been observed at room temperature, resulting from the electrochemical oxidation of polysulfides, a process occurring on the electrodes and influenced by the electrode materials. However, such electrode-dependent behavior of liquid sulfur has constrained its use in battery applications, driving research for alternative processes. This paper introduces an approach to generating liquid sulfur at both room and subzero temperatures through chemical reactions independent of the substrate material. We demonstrate that using a redox mediator, polysulfides can be chemically oxidized into liquid sulfur droplets in the electrolyte close to but away from the electrode. This pathway can generate liquid sulfur at room and subzero temperatures of −15 °C, 130 °C below sulfur’s melting temperature (115 °C). The chemically generated liquid sulfur further enriches the lithium–sulfur-electrolyte material systems, potentially creating opportunities for high-energy lithium–sulfur and other metal–sulfur batteries.

liquid sulfur↗
NASA NTRS1985

Orientation and temperature dependence of some mechanical properties of the single-crystal nickel-base superalloy Rene N4. 3: Tension-compression anisotropy

Single crystal superalloy specimens with various crystallographic directions along their axes were tested in compression at room temperature, 650, 760, 870, and 980 deg C. These results are compared with the tensile behavior studied previously. The alloy, Rene N4, was developed for gas turbine engine blades and has the nominal composition 3.7 Al, 4.2 Ti, 4 Ta, 0.5 Nb, 6 W, 1.5 Mo 9 Cr. 7.5 Co, balance Ni, in weight percent. Slip trace analysis showed that primary cube slip occurred even at room temperature for the 111 specimens. With increasing test temperature more orientations exhibited primary cube slip, until at 870 deg C only the 100 and 011 specimens exhibited normal octahedral slip. The yield strength for octahedral slip was numerically analysed using a model proposed by Lall, Chin, and Pope to explain deviations from Schmid's Law in the yielding behavior of a single phase Gamma prime alloy, Ni3(Al, Nb). The Schmid's Law deviations in Rene N4 were found to be largely due to a tension-compression anisotropy. A second effect, which increases trength for orientations away from 001, was found to be small in Rene N4. Analysis of recently published data on the single crystal superalloy PWA 1480 yielded the same result.

Miner, R. V.↗
DOE OSTI2025

Development of Niobium-based alloys for Turbine Applications: 20/CJ000/08/09 (ULTIMATE Phase I project)

Current Ni-based alloys used in turbine blade applications are operating at 1100°C which is approximately 90% of the solidus of Ni-based alloys. Further increases in temperature can be achieved only through the use of alloys with higher solidus temperatures such as refractory alloys which include Mo, Nb, W, Ta alloys. Niobium has a unique combination of physical properties that include a high melting point (2468°C), lowest density (8.57 g/cc), and the lowest modulus amongst refractory alloys, a good thermal conductivity that increases from 45 W/mK at room temperature to 62 W/mK at 1093°C, good ductility with fabricability using traditional techniques, high strength, good creep resistance, and general chemical inactivity. Hence niobium alloys offer many advantages for use at the desired temperature of 1300°C. One of the major deterrents to the use of niobium and its alloys at high temperatures is achieving good oxidation resistance. In addition, achieving balanced properties of room temperature strength, ductility, fracture toughness, high temperature strength, and creep resistance required for 1300°C operation at a density of 9 g/cm 3 is extremely challenging since the addition of W which is a potent strengthener increases the density of the alloy. This project seeks to enable the development of a tri-layered turbine blade that can operate continuously at 1300°C with the core of the turbine blade providing good creep resistance, the second layer providing improved oxidation resistance over the core layer, and the third layer being an environmental barrier providing oxidation resistance. The objective of this Phase 1 project was to use computational modeling and advanced characterization tools to develop two classes of Nb alloys which could be used as the core layer and the transition layer.

36 MATERIALS SCIENCE↗
NASA NTRS2007

Crystal Growth and Characterization of CdTe Grown by Vertical Gradient Freeze

In this study, crystals of CdTe were grown from melts by the unseeded vertical gradient freeze method. The quality of grown crystal were studied by various characterization techniques including Synchrotron White Beam X-ray Topography (SWBXT), chemical analysis by glow discharge mass spectroscopy (GDMS), low temperature photoluminescence (PL), and Hall measurements. The SWBXT images from various angles show nearly strain-free grains, grains with inhomogeneous strains, as well as twinning nucleated in the shoulder region of the boule. The GDMS chemical analysis shows the contamination of Ga at a level of 3900 ppb, atomic. The low temperature PL measurement exhibits the characteristic emissions of a Ga-doped sample. The Hall measurements show a resistivity of 1 x l0(exp 7) ohm-cm at room temperature to 3 x 10(exp 9) ohm-cm at 78K with the respective hole and electron concentration of 1.7 x 10(exp 9) cm(exp -3) and 3.9 x 10(exp 7) cm(exp -3) at room temperature.

Su, Ching-Hua↗
DOE OSTI2023

Microstructural and phase changes in alpha uranium investigated via in-situ studies and molecular dynamics

A deeper knowledge of thermally induced microstructural and phase evolution in nuclear metallic fuel can be obtained using novel in-situ microscopic analyses. Such studies can provide information on the dynamics of phase transitions which is not possible with conventional postmortem characterization (post-irradiation examination). In this work, the behavior of alpha uranium (α-U) was investigated via in-situ heating tests in a transmission electron microscope. Here, the main objective is to understand the microstructural and phase changes, such as defect annihilation and ß phase formation and retention, observed in reactor in-pile transient studies at the Transient Reactor Test facility. Indeed, defect migration and rearrangement were observed within the α phase starting at 673 K; α→ß phase transition was observed between 773 K and 1,073 K during the heating ramp (which is in the temperature window reported for α→ß transition temperatures). Recrystallization and formation of nano grains was observed at high temperatures (over 1,073 K). Such recrystallization was possibly related to the formation of the γ phase. Finally, it was indeed observed that the ß phase (but not γ phase) was retained at room temperature upon rapid cooling. Molecular dynamics studies support these experimental results and shows that the γ phase of pure uranium cannot be retained at room temperature if not stabilized with the addition of an alloying element.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2024

High-Temperature Observation of Intralayer, Interlayer, and Rydberg Excitons in Bulk Van Der Waals Alloy Single Crystals

Transition metal dichalcogenides exhibit remarkable optical properties due to the diverse number of strongly bound excitons, which can be fine-tuned by alloying. Despite a flurry of research activity in characterizing these excitons, a comprehensive and profound understanding of their behavior with temperature is lacking. Here, we report the rich spectrum of excitonic features within bulk van der Waals alloy Mo0.5 W0.5 S2 and Mo0.5 W0.5 Se2 single crystals through temperature-dependent reflectance spectroscopy and first-principles calculations. We observed Rydberg excitons and interlayer excitons in both the single crystals. Notably, we provide the first experimental evidence of highly energetic A' and B' excitons in Mo0.5 W0.5 S2 at room temperature. The strong carrier-phonon scattering significantly broadens the A', B', and interlayer excitons at room temperature in bulk Mo0.5 W0.5 S2 single crystal compared to its selenide. Our findings, supported by density functional theory and Bethe-Salpeter equation calculations, signify the crucial role of carrier-phonon interactions. These results open pathways for next-generation optoelectronic devices and quantum technologies operating at high temperature.

excitons↗