Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “material defects”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,297 records · Page 72
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Ternary nitride semiconductors in the rocksalt crystal structure

Inorganic nitrides with wurtzite crystal structures are well-known semiconductors used in optical and electronic devices. In contrast, rocksalt-structured nitrides are known for their superconducting and refractory properties. Breaking this dichotomy, here we report ternary nitride semiconductors with rocksalt crystal structures, remarkable electronic properties, and the general chemical formula Mg x TM 1−x N ( TM = Ti, Zr, Hf, Nb). Our experiments show that these materials form over a broad metal composition range, and that Mg-rich compositions are nondegenerate semiconductors with visible-range optical absorption onsets (1.8 to 2.1 eV) and up to 100 cm 2 V −1 ⋅s −1 electron mobility for MgZrN 2 grown on MgO substrates. Complementary ab initio calculations reveal that these materials have disorder-tunable optical absorption, large dielectric constants, and electronic bandgaps that are relatively insensitive to disorder. These ternary Mg x TM 1−x N semiconductors are also structurally compatible both with binary TM N superconductors and main-group nitride semiconductors along certain crystallographic orientations. Overall, these results highlight Mg x TM 1−x N as a class of materials combining the semiconducting properties of main-group wurtzite nitrides and rocksalt structure of superconducting transition-metal nitrides.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Thermodynamic stability and contributions to the Gibbs free energy of nanocrystalline Ni 3 Fe

In this work, the heat capacities of nanocrystalline Ni 3 Fe and control materials with larger crystallites were measured from 0.4–300 K. The heat capacities were integrated to obtain the enthalpy, entropy, and Gibbs free energy and to quantify how these thermodynamic functions are altered by nanocrystallinity. From the phonon density of states (DOS) measured by inelastic neutron scattering, we find that the Gibbs free energy is dominated by phonons and that the larger heat capacity of the nanomaterial below 100 K is attributable to its enhanced phonon DOS at low energies. Besides electronic and magnetic contributions, the nanocrystalline material has an additional contribution at higher temperatures, consistent with phonon anharmonicity. The nanocrystalline material shows a stronger increase with temperature of both the enthalpy and entropy compared to the bulk sample. Its entropy exceeds that of the bulk material by 0.4 $k_B$/atom at 300 K. This is insufficient to overcome the enthalpy of grain boundaries and defects in the nanocrystalline material, making it thermodynamically unstable with respect to the bulk control material.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Plasticity models of material variability based on uncertainty quantification techniques

The advent of fabrication techniques like additive manufacturing has focused attention on the considerable variability of material response due to defects and other micro-structural aspects. This variability motivates the development of an enhanced design methodology that incorporates inherent material variability to provide robust predictions of performance. In this work, we develop plasticity models capable of representing the distribution of mechanical responses observed in experiments using traditional plasticity models of the mean response and recently developed uncertainty quantification (UQ) techniques. Lastly, we demonstrate that the new method provides predictive realizations that are superior to more traditional ones, and how these UQ techniques can be used in model selection and assessing the quality of calibrated physical parameters.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Electronic and Optical Properties of NV Center in Diamonds for Sensing Applications: Experimental and First Principles Density Functional Theory Approach

The nitrogen-vacancy (NV) center in a nanodiamond (ND) crystal is one of the best candidate materials for quantum sensing and metrology applications at elevated environmental conditions. The NV center can be used to achieve an unprecedented level of sensitivity for sensing applications at high temperatures and pressures. The NV center is also proven to be useful for magnetic field sensing. Furthermore, it can be used for applications in the sensing of valuable minerals such as rare earth elements (REEs) from the crude and waste subsurface materials. This work presents computational and experimental studies on electronic and optical properties of bulk diamond with N and NV defects. ND in MOF/polymer materials will be experimentally encapsulated. The transverse spin relaxation time of the NV center will be measured in bare and encapsulated ND. Different doping elements will be introduced on the surfaces and present surface electronic properties to study the surfaces with shallow NV center for quantum sensing applications.

Paudel, Hari P.↗
DOE OSTI2024

Computational Approaches for Clean Energy Materials

Currently, 80% of the global final energy consumption occurs in form of fuels and only 20% as electricity. On the other hand, renewable energy additions come almost exclusively in the form of electricity (dominantly photovoltaics and wind). Thus, a successful energy transition will require enormous growth in renewables, sufficient to convert excess electricity into fuels, as well as the development of non-electricity based solar fuel technologies. As much as photovoltaic capacities have grown over the past 20 years, it is far from clear that current technologies and materials are up to the task to grow from here by yet another factor 100 until 2050. Therefore, sustained research efforts on emerging inorganic semiconductors for solar electricity and fuels are essential for facing the double challenge of climate change and energy security. Computational materials science can make important contributions, guiding and supporting research activities through both materials search and discovery and through detailed studies that help to develop a mechanistic understanding of materials performance and bottlenecks. This presentation will highlight three recent computational projects with relevance for photovoltaics and solar fuels (1) Defect graph neural networks (dGNN) for materials discovery in solar thermochemical hydrogen (STCH) [1]. The dGNN approach facilitates broad and fast materials screening for defect properties. (2) Modeling highly off-stoichiometric systems by evaluating the free energy of defect interaction [2]. This approach allows quantitative prediction of H2 production in complex STCH oxides. (3) First-principles atomic structure prediction for interfaces [3]. This work showed how an atomically thin CdCl2 interlayer phase enables in principle ideal electron transport across the incommensurate SnO2/CdTe interface. [1] M.D. Witman, A. Goyal, T. Ogitsu, A.H. McDaniel, S. Lany, Nat. Comput. Sci. (2023). https://doi.org/10.1038/s43588-023-00495-2. [2] A. Goyal, M.D. Sanders, R.P. O'Hayre, S. Lany, PRX Energy 3, 013008 (2024). https://doi.org/10.1103/PRXEnergy.3.013008. [3] A. Sharan, M. Nardone, D. Krasikov, N. Singh, S. Lany, Appl. Phys. Rev. 9, 041411 (2022). https://doi.org/10.1063/5.0104008.

density functional theory↗
DOE OSTI2020

Defect-mediated metastability and carrier lifetimes in polycrystalline (Ag,Cu)(In,Ga)Se 2 absorber materials

Using a combination of optical and electrical measurements, we develop a model for metastable defects in Ag-alloyed Cu(In,Ga)Se 2 , one of the leading thin film photovoltaic materials. By controlling the pre-selenization conditions of the back contact prior to the growth of polycrystalline (Ag,Cu)(In,Ga)Se 2 absorbers and subsequently exposing them to various stresses (light soaking and dark-heat), we explore in this paper the nature and role of metastable defects on the electro-optical and photovoltaic performance of high-efficiency solar cell materials and devices. Positron annihilation spectroscopy indicates that dark-heat exposure results in an increase in the concentration of the selenium–copper divacancy complex (V Se –V Cu ), attributed to depassivation of donor defects. Deep-level optical spectroscopy finds a corresponding increase of a defect at Ev+0.98 eV, and deep-level transient spectroscopy suggests that this increase is accompanied by a decrease in the concentration of mid-bandgap recombination centers. Time-resolved photoluminescence excitation spectroscopy data are consistent with the presence of the V Se –V Cu divacancy complex, which may act as a shallow trap for the minority carriers. Light-soaking experiments are consistent with the V Se –V Cu optical cycle proposed by Lany and Zunger, resulting in the conversion of shallow traps into recombination states that limit the effective minority carrier recombination time (and the associated carrier diffusion length) and an increase in the doping density that limits carrier extraction in photovoltaic devices.

14 SOLAR ENERGY↗
DOE OSTI2023

Neutron diffraction and DFT studies of oxygen defect and transport in higher-order Ruddlesden–Popper phase materials

A series of higher-order Ruddlesden–Popper phase materials – La 3 PrNi 3 O 10-δ , La 2 Pr 2 Ni 3 O 10-δ and LaPr 3 Ni 3 O 10-δ – were synthesised and investigated by neutron powder diffraction to understand the oxygen defect structure and propose possible pathways for oxygen transport in these materials. Further complimentary DFT calculations of the materials were performed to support the experimental analysis. All of the phases were hypostoichiometric and it was observed that the majority of the oxygen vacancies were confined to the perovskite layers, with a preference for equatorial oxygen sites. A particular preference for vacancies in O(1) and O(5) sites at high temperatures was observed from neutron diffraction measurements which were further complimented by DFT calculations wherein the vacancy formation energy was found to be lowest at the O(1) site. Also, a preference for a curved oxygen transport pathway around the NiO 6 octahedra was observed which agrees with the published literature for Ruddlesden–Popper phase materials. Lattice parameters for all three compositions showed a linear increase with increasing temperature, but the increase was greatest in the c parameter while the b parameter showed only a slight increase when compared to the a parameter. The thermal expansion coefficient was calculated for all compositions and was found to be in the range 13.0–13.4 × 10 -6 °C -1 , which is compatible with the commonly used electrolyte materials for solid oxide fuel cells.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2011

Relative Defect Density Measurements of Laser Shock Peened 316L Stainless Steel Using Positron Annihilation Spectroscopy

The surface of an annealed 316L stainless steel coupon was laser shock peened and Vickers hardness measurements were subsequently taken of its surface. This Vickers hardness data was compared with measurements taken using the technique of positron annihilation Doppler broadening spectroscopy. When compared, a correlation was found between the Vickers hardness data measurements and those made using Doppler broadening spectroscopy. Although materials with a high defect density can cause the S-parameter measurements to saturate, variations in the Sparameter measurements suggest that through further research the Doppler broadening technique could be used as a viable alternative to measuring a material's hardness. In turn, this technique, could be useful in industrial settings where surface hardness and surface defects are used to predict lifetime of components.

36 MATERIALS SCIENCE↗
DOE OSTI2022

The role of pre-existing heterogeneities in materials under shock and spall

There has been a challenge for many decades to understand how heterogeneities influence the behavior of materials under shock loading, eventually leading to spall formation and failure. Experimental, analytical, and computational techniques have matured to the point where systematic studies of materials with complex microstructures under shock loading and the associated failure mechanisms are feasible. This is enabled by more accurate diagnostics as well as characterization methods. As interest in complex materials grows, understanding and predicting the role of heterogeneities in determining the dynamic behavior becomes crucial. Early computational studies, hydrocodes, in particular, historically preclude any irregularities in the form of defects and impurities in the material microstructure for the sake of simplification and to retain the hydrodynamic conservation equations. Contemporary computational methods, notably molecular dynamics simulations, can overcome this limitation by incorporating inhomogeneities albeit at a much lower length and time scale. This review discusses literature that has focused on investigating the role of various imperfections in the shock and spall behavior, emphasizing mainly heterogeneities such as second-phase particles, inclusions, and voids under both shock compression and release. Pre-existing defects are found in most engineering materials, ranging from thermodynamically necessary vacancies, to interstitial and dislocation, to microstructural features such as inclusions, second phase particles, voids, grain boundaries, and triple junctions. This literature review explores the interaction of these heterogeneities under shock loading during compression and release. Systematic characterization of material heterogeneities before and after shock loading, along with direct measurements of Hugoniot elastic limit and spall strength, allows for more generalized theories to be formulated. Further, continuous improvement toward time-resolved, in situ experimental data strengthens the ability to elucidate upon results gathered from simulations and analytical models, thus improving the overall ability to understand and predict how materials behave under dynamic loading.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Geometrically necessary dislocation fingerprints of dislocation loop absorption at grain boundaries

Here we present a numerical methodology to compute the Nye-tensor fingerprints of dislocation loop absorption at grain boundaries (GBs) for comparison with TEM observations of irradiated polycrystals. Our approach links atomistic simulations of self-interstitial atom (SIA) prismatic loops gliding toward and interacting with GBs in body-centered cubic iron with experimentally extracted geometrically necessary dislocation (GND) maps to facilitate the interpretation of damage processes. The Nye-tensor analysis is strongly mesh-size dependent—corresponding to resolution-dependent TEM observations. The method computes GND fingerprints from discretized dislocation line segments extracted from molecular dynamics simulations of dislocation loops being absorbed at a GB. Specifically, we perform MD simulation of prismatic loops of two diameters and monitor the three stages of the absorption process: loop glide, the partial, and full absorption of the loops at a [1 0 0] symmetric tilt GB. These methods provide a framework for future investigations of the nature of defect absorption by grain boundaries under irradiation conditions.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Low energy electron beam induced damage on InGaN/GaN quantum well structure

In this paper, low energy electron beam (5-20 keV, 0-500 {mu}As/cm{sup 2}) induced damage on a GaN/InGaN/GaN near-surface quantum well structure is studied. Exposure to low energy electron beam is shown to significantly reduce the optical quality of the structure. It is also observed that reducing the electron beam energy causes larger PL intensity reduction. This can be explained by considering the beam penetration depth, which is shown to be smaller with lower e-beam energies. The damage is believed to be attributed to enhanced dislocation mobility upon low energy electron beam irradiation. However, further studies are needed to confirm the mechanism. These results should be taken into consideration in low energy electron beam related sample characterization and preparation.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Shockley-Read-Hall lifetimes in CdTe

A combination of first principles electronic structure calculations, Green's function method, and empirical tight-binding Hamiltonian method is used to evaluate the minority carrier lifetimes of CdTe due to recombination via native point defects in CdTe. For defect energy levels near mid-gap, our calculated value of the Shockley-Read-Hall capture cross section for both electrons and holes is ~10⁻¹³ cm², which is considerably different from the most commonly employed values. We further find that minority carrier lifetimes in doped CdTe are affected more by defect levels closer to the Fermi level than those in the mid-gap.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Revealing the Hidden Third Dimension of Point Defects in Two-Dimensional MXenes

Point defects govern many important functional properties of two-dimensional (2D) materials. However, resolving the three-dimensional (3D) arrangement of these defects in multi-layer 2D materials remains a fundamental challenge, hindering rational defect engineering. Here, we overcome this limitation using an artificial intelligence-guided electron microscopy workflow to map the 3D topology and clustering of atomic vacancies in Ti3C2TX MXene. Our approach reconstructs the 3D coordinates of vacancies across hundreds of thousands of lattice sites, generating robust statistical insight into their distribution that can be correlated with specific synthesis pathways. This large-scale data enables us to classify a hierarchy of defect structures-from isolated vacancies to nanopores-revealing their preferred formation and interaction mechanisms, as corroborated by molecular dynamics simulations. This work provides a generalizable framework for understanding and ultimately controlling point defects across large volumes, paving the way for the rational design of defect-engineered functional 2D materials.

2D materials↗
DOE OSTI2025

Coherent Spins in van der Waals Semiconductor GeS 2 at Ambient Conditions

Optically active spin defects in van der Waals (vdW) materials have emerged as versatile quantum sensors, enabling applications for a wide range of quantum phenomena in condensed matter systems. Their ease of exfoliation and compatibility with device integration make them promising candidates for future quantum technologies. Here we report the observation and room-temperature coherent control of ensemble spin defects in the high-temperature crystalline phase of germanium disulfide (β-GeS 2 ), a two-dimensional (2D) semiconductor with low nuclear spin density. The defects exhibit spin-1/2 behavior, and their dynamics can be explained by a weakly coupled spin-pair model. We implement dynamical decoupling techniques to extend the coherence time (T 2 ) by a factor of 20. Finally, we use density functional theory (DFT) calculations to estimate the structures and spin densities of two possible spin defect candidates. This work will help to expand the field of quantum sensing with spin defects in 2D materials.

2D materials↗
NASA NTRS1992

A comparison of conventional and advanced ultrasonic inspection techniques in the characterization of TMC materials

Results obtained with a conventional ultrasonic inspection technique as well as those obtained with more advanced ultrasonic NDE methods in the characterization of an 8-ply quasi-isotropic titanium matrix composite (TMC) specimen are presented. Images obtained from a conventional ultrasonic inspection of TMC material are compared with those obtained using more sophisticated ultrasonic inspection methods. It is suggested that the latter techniques are able to provide quantitative images of TMC material. They are able to reveal the same potential defect indications while simultaneously providing more quantitative information concerning the material's inherent properties. Band-limited signal loss and slope-of-attenuation images provide quantitative data on the inherent material characteristics and defects in TMC.

Holland, Mark R.↗
DOE OSTI2016

Toward superconducting critical current by design

The interaction of vortex matter with defects in applied superconductors directly determines their current carrying capacity. Defects range from chemically grown nanostructures and crystalline imperfections to the layered structure of the material itself. The vortex-defect interactions are non-additive in general, leading to complex dynamic behavior that has proven difficult to capture in analytical models. With recent rapid progress in computational powers, a new paradigm has emerged that aims at simulation assisted design of defect structures with predictable ‘critical-current-by-design’: analogous to the materials genome concept of predicting stable materials structures of interest. We demonstrate the feasibility of this paradigm by combining large-scale time-dependent Ginzburg-Landau numerical simulations with experiments on commercial high temperature superconductor (HTS) containing well-controlled correlated defects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

High-resolution virtual Frisch grid gamma-ray detectors based on as-grown CdZnTeSe with reduced defects

X- and gamma-ray detectors arequickly becoming essential tools for science and technology in various fields. These detectors offer broad applications such as homeland security, nonproliferation, nuclear security, medical imaging, astrophysics, and high energy physics. All these applications necessitate high-resolution detectors operable at room temperature and available at a reasonable cost. CdZnTe (CZT) is the material of choice for this purpose; however, the material still suffers from intrinsic defects such as highly decorated subgrain boundary networks and a high concentration of secondary phases. These defects not only hinder the charge transport but also create a spatial inhomogeneity in the charge transport properties, subsequently causing substantial degradation in detector response particularly for relatively thick (>1 cm) detectors. Some of the material deficiencies suffered by CZT have been addressed by adding selenium into the CZT matrix. Selenium was found to be very effective in producing material that is principally free from a subgrain boundary network with the occasional appearance of subgrain boundaries with reduced secondary phases decorating these boundaries. The resulting quaternary compound CdZnTeSe (CZTS) reflected excellent material quality mitigating some major deficiencies suffered by CZT. Virtual Frisch grid detectors were fabricated from the as-grown CZTS ingots, and they demonstrated high resolution spectroscopic grade. The excellent CZTS material contained very low defects and was found to potentially increase the yield of high-quality detectors as compared to CZT.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗