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At least 1,297 records · Page 72

Charge transport mechanism analysis of Al/CdS:Sr{sup 2+}/ITO device under dark and light

In this study, we have synthesized CdS:Sr{sup 2+} by hydrothermal technique. Material property has been studied by X-ray diffraction (XRD), Scanning electron microscope (SEM) and UV-vis absorption spectroscopy. XRD data revealed that there are mixed phases of CdS and SrS in the synthesized sample. The optical band gap of the material was estimated as 3.15 eV from UV-vis data. The synthesized material has been applied in metal-semiconductor device and transport properties have been analyzed by measuring current–voltage characteristics under dark and light conditions at room temperature. Variation in different device parameters like ideality factor, barrier height and series resistance of Al/CdS:Sr{sup 2+}/ITO device were analyzed by using Cheung’s function.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

The multi-step resistive switching (RS) behavior of a unipolar Pt/Li{sub 0.06}Zn{sub 0.94}O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li{sup +} ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Study of plasma equilibrium in toroidal fusion devices using mesh-free numerical calculation method

Plasma confinement using external magnetic field is one of the successful ways leading to the controlled nuclear fusion. Development and validation of the solution process for plasma equilibrium in the experimental toroidal fusion devices is the main subject of this work. Solution of the nonlinear 2D stationary problem as posed by the Grad-Shafranov equation gives quantitative information about plasma equilibrium inside the vacuum chamber of hot fusion devices. This study suggests solving plasma equilibrium equation which is essential in toroidal nuclear fusion devices, using a mesh-free method in a condition that the plasma boundary is unknown. The Grad-Shafranov equation has been solved numerically by the point interpolation collocation mesh-free method. Important features of this approach include truly mesh free, simple mathematical relationships between points and acceptable precision in comparison with the parametric results. The calculation process has been done by using the regular and irregular nodal distribution and support domains with different points. The relative error between numerical and analytical solution is discussed for several test examples such as small size Damavand tokamak, ITER-like equilibrium, NSTX-like equilibrium, and typical Spheromak.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

An electron Bernstein wave heating scheme for the Proto-MPEX linear device

Linear plasma devices, such as the Prototype Material Plasma Exposure eXperiment (Proto-MPEX), are an economic method to study plasma-material interactions under high heat and particle fluxes. The Proto-MPEX device at Oak Ridge National Laboratory is a high-density helicon plasma generator with additional resonant electron heating to study plasma-material interactions in ITER-like conditions. Here, we present modeling results of an electron Bernstein wave (EBW) heating scheme for this device using a microwave-based system. A 28 GHz injection system is available to provide power levels up to 100 kW injected into low electron temperature and high electron density plasmas. A modified version of the GENRAY ray-tracing code, GENRAY-C, has been used to determine the EBW and electron cyclotron heating wave accessibility for these overdense plasmas. Modeling has shown that greater than 80% of mode conversion from the ordinary mode to the EBW is possible for 28 GHz injection in Proto-MPEX. Calculations show that by utilizing the effects of Doppler-shifted resonance absorption, power deposition near the core is possible. Finally, significant collisional damping, leading to edge absorption, is expected to occur for neutral pressures >1.0 mTorr; however, experiments can be designed to minimize these effects.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Challenges in materials and devices for resistive-switching-based neuromorphic computing

This tutorial describes challenges and possible avenues for the implementation of the components of a solid-state system, which emulates a biological brain. The tutorial is devoted mostly to a charge-based (i.e. electric controlled) implementation using transition metal oxide materials, which exhibit unique properties that emulate key functionalities needed for this application. In Sec. I, we compare the main differences between a conventional computational machine, based on the Turing-von Neumann paradigm, and a neuromorphic machine, which tries to emulate important functionalities of a biological brain. We also describe the main electrical properties of biological systems, which would be useful to implement in a charge-based system. In Sec. II, we describe the main components of a possible solid-state implementation. In Sec. III, we describe a variety of Resistive Switching phenomena, which may serve as the functional basis for the implementation of key devices for neuromorphic computing. In Sec. IV, we describe why transition metal oxides are promising materials for future neuromorphic machines. Theoretical models describing different resistive switching mechanisms are discussed in Sec. V, while existing implementations are described in Sec. VI. Section VII presents applications to practical problems. We list in Sec. VIII important basic research challenges and open issues. Here, we discuss issues related to specific implementations, novel materials, devices, and phenomena. The development of reliable, fault tolerant, energy efficient devices, their scaling, and integration into a neuromorphic computer may bring us closer to the development of a machine that rivals the brain.

36 MATERIALS SCIENCE↗

Room temperature depinning of the charge-density waves in quasi-two-dimensional 1T-TaS 2 devices

Here we report on the depinning of nearly commensurate charge-density waves in 1T-TaS 2 thin films at room temperature. A combination of the differential current–voltage measurements with the low-frequency noise spectroscopy provides unambiguous means for detecting the depinning threshold field in quasi-2D materials. The depinning process in 1T-TaS 2 is not accompanied by an observable abrupt increase in electric current—in striking contrast to depinning in the conventional charge-density-wave materials with quasi-1D crystal structure. We explained it by the fact that the current density from the charge-density waves in the 1T-TaS 2 devices is orders of magnitude smaller than the current density of the free carriers available in the discommensuration network surrounding the commensurate charge-density wave islands. The depinning fields in 1T-TaS 2 thin-film devices are several orders of magnitude larger than those in quasi-1D van der Waals materials. Obtained results are important for the proposed applications of the charge-density wave devices in electronics.

2D materials↗

Ion beam etching dependence of spin-orbit torque memory devices with switching current densities reduced by Hf interlayers

We report on the fabrication of nanoscale, three-terminal in-plane spin–orbit torque switching devices with low switching current densities. Critical parameters in the fabrication process, including the ion beam etching angle and time, were optimized to avoid fabrication defects and improve device yield. Measurements of the magnetic field and current-induced switching behavior of the tunnel junctions demonstrate a sensitivity to the nanopillar aspect ratio, which dictates the nanopillars’ anisotropy and thermal stability. Additionally, we show that the current density required for switching can be reduced and the device thermal stability increased by inserting Hf interlayers into the heterostructure. Micromagnetic simulations are generally consistent with the experimentally observed switching behavior, suggesting an increase in the interfacial perpendicular anisotropy at the CoFeB/MgO interface and the reduction in the Dzyaloshinskii–Moriya interaction at the W/CoFeB interface by the Hf interlayers.

36 MATERIALS SCIENCE↗

Sketched Nanoscale KTaO 3 -Based Superconducting Quantum Interference Device

The discovery of two-dimensional superconductivity in LaAlO 3 /KTaO 3 (111) and (110) interfaces has raised significant interest in this system. In this paper, we report the first successful fabrication of a direct current superconducting quantum interference device (dc-SQUID) in the KTO system. The key device elements, superconducting weak links, are created by conductive atomic force microscope lithography, which can reversibly control the conductivity at the LAO/KTO (110) interface with nanoscale resolution. The periodic modulation of the SQUID critical current 𝐼 c ⁡(𝐵) with magnetic field corresponds well with our theoretical modeling, which reveals a large kinetic inductance of the superconducting two-dimensional electron gas in KTO. The kinetic inductance of the SQUID is tunable by electrical gating from the back, due to the large dielectric constant of KTO. The demonstration of weak links and SQUIDs in KTO broadens the scope for exploring the underlying physics of KTO superconductivity, including the role of spin-orbit coupling, pairing symmetry, and inhomogeneity. It also promotes KTO as a versatile platform for a growing family of quantum devices, which could be applicable in the realm of quantum computing and information.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Band Edge Positions and Their Impact on the Simulated Device Performance of ZnSnN 2 -Based Solar Cells

ZnSnN 2 (ZTN) has been proposed as a new earth abundant absorber material for PV applications. While carrier concentration has been reduced to values suitable for device implementation, other properties such as ionization potential, electron affinity and work function are not known. Here, we experimentally determine the value of ionization potential (5.6 eV), electron affinity (4.1 eV) and work function (4.4 eV) for ZTN thin film samples with Zn cation composition Zn/(Zn+Sn) = 0.56 and carrier concentration n = 2x10 19 cm -3 . Using both experimental and theoretical results, we build a model to simulate the device performance of a ZTN/Mg:CuCrO 2 solar cell, showing a potential efficiency of 23% in the limit of no defects present. We also investigate the role of band tails and recombination centers on the cell performance. In particular device simulations show that band tails are highly detrimental to the cell efficiency, and recombination centers are a major limitation if present in concentration comparable to the net carrier density. The effect of the position of the band edges of the p-type junction partner was assessed too. Through this study, we determine the major bottlenecks for the development of ZTN-based solar cell and identify avenues to mitigate them.

14 SOLAR ENERGY↗

Device Access Abstractions for Resilient Information Architecture Platform for Smart Grid

An open application platform distributes the intelligence and control capability to local endpoints (or nodes) reducing total network traffic, improving speed of local actions by avoiding latency, and improving reliability by reducing dependencies on numerous devices and communication interfaces. The platform must be multi-tasking and able to host multiple applications running simultaneously. Given such a system, the core functions of power grid control systems include grid state determination, low level control, fault intelligence and reconfiguration, outage intelligence, power quality measurement, remote asset monitoring, configuration management, power and energy management (including local distributed energy resources, such as wind, solar and energy storage) can be eventually distributed. However, making this move requires extensive regression testing of systems to prove out new technologies, such as phasor measurement units (PMU). Additionally, as the complexity of the systems increase with the inclusion of new functionality (especially at the distribution and consumer levels), hidden coupling issues becomes a challenge with possible N-way interactions known and not known by device and application developers. Therefore, it is very important to provide core abstractions that ensure uniform operational semantics across such interactions. Here in this paper, we describe the pattern for abstracting device interactions we have developed for the RIAPS platform in the context of a microgrid control application we have developed.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Metamaterial-Inspired Vacuum Electron Devices and Accelerators

Metamaterials (MTMs) are structured materials with subwavelength features that can be engineered to have some unique properties not found in nature, such as negative refractive index, reversed Doppler effect, and reversed Cherenkov radiation. Based on these novel MTMs, several important research groups have made great attempts to develop novel MTM-inspired vacuum electron devices (VEDs) and accelerators. Just as solid-state power devices are innovated by incessant emerging of new semiconductor materials, VEDs can also be inspired by MTMs to have very remarkable advantages, such as smaller size, higher power, higher efficiency, and/or larger gain relative to conventional VEDs, such as traveling-wave tubes, backward-wave oscillators, and klystrons. Similarly, relative to conventional accelerators, MTM-inspired accelerators have obvious advantages, such as smaller size and higher accelerating gradient. In addition, MTM-inspired devices have promising applications in areas such as radar, communication, electronicwarfare,microwave heating, and imaging.

43 PARTICLE ACCELERATORS↗

Understanding the Implications of a LINAC’s Microstructure on Devices and Photocurrent Models

Here, the effect of a linear accelerator’s (LINAC’s) microstructure (i.e., train of narrow pulses) on devices and the associated transient photocurrent models are investigated. The data indicate that the photocurrent response of Si-based RF bipolar junction transistors and RF p-i-n diodes is considerably higher when taking into account the microstructure effects. Similarly, the response of diamond, SiO 2 , and GaAs photoconductive detectors (standard radiation diagnostics) is higher when taking into account the microstructure. This has obvious hardness assurance implications when assessing the transient response of devices because the measured photocurrent and dose rate levels could be underestimated if microstructure effects are not captured. Indeed, the rate the energy is deposited in a material during the microstructure peaks is much higher than the filtered rate which is traditionally measured. In addition, photocurrent models developed with filtered LINAC data may be inherently inaccurate if a device is able to respond to the microstructure.

43 PARTICLE ACCELERATORS↗

Topology-empowered membrane devices for terahertz photonics

Control of terahertz waves offers a profound platform for next-generation sensing, imaging, and information communications. However, all conventional terahertz components and systems suffer from bulky design, sensitivity to imperfections, and transmission loss. We propose and experimentally demonstrate on-chip integration and miniaturization of topological devices, which may address many existing drawbacks of the terahertz technology. We design and fabricate topological devices based on valley-Hall photonic structures that can be employed for various integrated components of on-chip terahertz systems. We demonstrate valley-locked asymmetric energy flow and mode conversion with topological waveguide, multiport couplers, wave division, and whispering gallery mode resonators. Our devices are based on topological membrane metasurfaces, which are of great importance for developing on-chip photonics and bring many features into terahertz technology.

47 OTHER INSTRUMENTATION↗

Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques

The attachment of dopant precursor molecules to depassivated areas of hydrogen-terminated silicon templated with a scanning tunneling microscope (STM) has been used to create electronic devices with subnanometer precision, typically for quantum physics experiments. This process, which we call atomic precision advanced manufacturing (APAM), dopes silicon beyond the solid-solubility limit and produces electrical and optical characteristics that may also be useful for microelectronic and plasmonic applications. However, scanned probe lithography lacks the throughput required to develop more sophisticated applications. In this work, we demonstrate and characterize an APAM device workflow where scanned probe lithography of the atomic layer resist has been replaced by photolithography. An ultraviolet laser is shown to locally and controllably heat silicon above the temperature required for hydrogen depassivation on a nanosecond timescale, a process resistant to under- and overexposure. STM images indicate a narrow range of energy density where the surface is both depassivated and undamaged. Modeling that accounts for photothermal heating and the subsequent hydrogen desorption kinetics suggests that the silicon surface temperatures reached in our patterning process exceed those required for hydrogen removal in temperature-programmed desorption experiments. A phosphorus-doped van der Pauw structure made by sequentially photodepassivating a predefined area and then exposing it to phosphine is found to have a similar mobility and higher carrier density compared with devices patterned by STM. Lastly, it is also demonstrated that photodepassivation and precursor exposure steps may be performed concomitantly, a potential route to enabling APAM outside of ultrahigh vacuum.

nanoscale devices↗

SU-F-BRA-16: Development of a Radiation Monitoring Device Using a Low-Cost CCD Camera Following Radionuclide Therapy

Purpose: It is now commonplace to handle treatments of hyperthyroidism using iodine-131 as an outpatient procedure due to lower costs and less stringent federal regulations. The Nuclear Regulatory Commission has currently updated release guidelines for these procedures, but there is still a large uncertainty in the dose to the public. Current guidelines to minimize dose to the public require patients to remain isolated after treatment. The purpose of this study was to use a low-cost common device, such as a cell phone, to estimate exposure emitted from a patient to the general public. Methods: Measurements were performed using an Apple iPhone 3GS and a Cs-137 irradiator. The charge-coupled device (CCD) camera on the phone was irradiated to exposure rates ranging from 0.1 mR/hr to 100 mR/hr and 30-sec videos were taken during irradiation with the camera lens covered by electrical tape. Interactions were detected as white pixels on a black background in each video. Both single threshold (ST) and colony counting (CC) methods were performed using MATLAB®. Calibration curves were determined by comparing the total pixel intensity output from each method to the known exposure rate. Results: The calibration curve showed a linear relationship above 5 mR/hr for both analysis techniques. The number of events counted per unit exposure rate within the linear region was 19.5 ± 0.7 events/mR and 8.9 ± 0.4 events/mR for the ST and CC methods respectively. Conclusion: Two algorithms were developed and show a linear relationship between photons detected by a CCD camera and low exposure rates, in the range of 5 mR/hr to 100-mR/hr. Future work aims to refine this model by investigating the dose-rate and energy dependencies of the camera response. This algorithm allows for quantitative monitoring of exposure from patients treated with iodine-131 using a simple device outside of the hospital.

60 APPLIED LIFE SCIENCES↗

Buried Anode Device Development: Cooperative Research and Development Final Report, CRADA Number CRD-11-451

The possibility of a reflecting electrochromic device is very attractive, and the 'Buried Anode' architecture developed at NREL could yield such a device. The subject of this cooperative agreement will be the development and refinement of a Buried Anode device process. This development will require the active involvement of NREL and US e-Chromic personnel, and will require the use of NREL equipment as much as possible. When this effort is concluded, US e-Chromic will have enough information to construct a pilot production line, where further development can continue.

14 SOLAR ENERGY↗

Alpha Channeling in Open-System Magnetic Devices

The Grant DE-SC0000736, Alpha Channeling in Open-System Magnetic Devices, is a continuation of the Grant DE-FG02-06ER54851, Alpha Channeling in Mirror Machines. In publications funded by DE-SC0000736, the grant DE-FG02-06ER54851 was actually credited. The key results obtained under Grant DE-SC0000736, Alpha Channeling in Open-System Magnetic Devices, appear in a series of publications. The earlier effort under DE-FG02- 06ER54851 was the subject of a previous Final Report. The theme of this later effort has been unusual confinement effects, or de-confinement effects, in open-field magnetic confinement devices. First, the possibilities in losing axisymmetry were explored. Then a number of issues in rotating plasma were addressed. Most importantly, a spinoff application to plasma separations was recognized, which also resulted in a provisional patent application. (That provisional patent application, however, was not pursued further.) Alpha channeling entails injecting waves into magnetically confined plasma to release energy from one particular ion while ejecting that ion. The ejection of the ion is actually a concomitant effect in releasing energy from the ion to the wave. In rotating plasma, there is the opportunity to store the energy in a radial electric field rather than in waves. In other words, the ejected alpha particle loses its energy to the radial potential, which in turn produces plasma rotation. This is a very useful effect, since producing radial electric fields by other means are technologically more difficult. In fact, one can heat ions, and then eject them, to produce the desired radial field. In each case, there is a separation effect of different ions, which generalizes the original alpha-channeling concept of separating alpha ash from hydrogen. In a further generalization of the separation concept, a double-well filter represents a new way to produce high-throughput separations of ions, potentially useful for nuclear waste remediation.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

A Novel, Low-Cost, Portable Device for Counterfeit and Noncompliant Refrigerant Detection

The increasing prevalence of counterfeit refrigerants presents significant risks to Heating, Ventilation, Air Conditioning, and Refrigeration (HVACR) systems, including compromised equipment performance, safety hazards, and environmental non-compliance. This report details the development of a novel, cost-effective, and portable detection device designed to accurately identify counterfeit refrigerants. The device utilizes a controlled gas sampling and analysis system within a sealed chamber, ensuring precise measurements while maintaining safety through a purging mechanism. The system features a high-sensitivity sensor integrated with an onboard control module that analyzes gas composition in real-time, providing users with clear visual indicators for refrigerant authenticity.Laboratory validation demonstrated the device’s high accuracy (exceeding 95%) in detecting unauthorized refrigerant blends. Key advantages include affordability, ease of use, rapid response time, and compatibility with a wide range of refrigerants. This solution supports compliance with regulatory frameworks such as the American Innovation and Manufacturing (AIM) Act, enhances safety in HVACR operations, and mitigates the risks associated with counterfeit refrigerants. Future developments will focus on expanding refrigerant detection capabilities, integrating machine learning for enhanced accuracy, implementing cost-reduction strategies to improve accessibility and market adoption, and optimizing system packaging for enhanced field portability.

99 GENERAL AND MISCELLANEOUS↗