Temperature-Dependent Excitonic Light Manipulation with Atomically Thin Optical Elements
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Methylammonium lead iodide (CH 3 NH 3 PbI 3 , MAPbI 3 ) belongs to the group of organic–inorganic halide perovskites (OIHPs) that exhibit exceptional electrical and optical behavior suitable for photovoltaic applications. However, improving its structural and chemical stability and robustness remains a challenge for OIHPs to be considered a feasible active material in optoelectronic devices. This is due to the fact that this material is very susceptible to degrade under various intrinsic and extrinsic factors. Therefore, it is crucial to understand the mechanisms through which MAPbI 3 undergoes chemical degradation under operating conditions such as a relatively humid environment. We present the structural characteristics of MAPbI 3 under working conditions that suggest the routes of phase segregation as a result of exposing to highly moist media. We use dark pulse discharge behavior and current–voltage (I–V) variations of MAPbI 3 under different moisture levels to investigate the nature of structural degradation in OIHPs. Here we show that while relatively lower levels of humidity (~60% RH) have a limited impact on the structural stability of MAPbI 3 , exposure to higher levels of moisture (~100% RH) results in the formation of PbI 2 and aqueous CH 3 NH 3 I, which fundamentally change the charge transport characteristics in MAPbI 3 . Our findings explain the ongoing debate on the presence of a threshold for the humidity that triggers irreversible structural transformation and leads to full degradation of MAPbI 3 .
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Intermixing of atomic species at the electrode-electrolyte boundaries can impact the properties of the interfaces in solid-state batteries. Herein, this work uses first-principles statistical mechanics along with experimental characterization to understand intermixing at the electrode-electrolyte interface. For the model presented in this work, lithium manganese oxide (LiMn 2 O 4 , LMO) and lithium lanthanum titanate (Li 3x La 2/3-x TiO 3 , LLTO) are employed as the cathode and electrolyte, respectively. The results of the computational work show that Ti-Mn intermixing at the interface is significant at synthesis temperatures. The experimental results in this work find that, at some critical temperatures between 600 and 700 degrees C for material preparation, the interface of LLTO-LMO becomes blurred. Calculations predict that the interface is unstable with regard to Ti-Mn intermixing starting at 0 K, suggesting that the critical temperature found in the experiment is related to kinetics. The work overall suggests that, in designing a solid-state battery, the fundamental reactions such as intermixing need to be considered.
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Perfluoroalkyls (PFAS) continue to emerge as a global health threat making their effective detection and capture extremely important. Though metal–organic frameworks (MOFs) have stood out as a promising class of porous materials for sensing PFAS, detection limits remain insufficient and a fundamental understanding of detection mechanisms warrants further investigation. Here, in this study, we show the use of a 2D conductive MOF film based on copper hexahydroxy triphenylene (Cu-HHTP) to fabricate chemiresistive sensing devices for detecting PFAS in drinking water. We further show ultrasensitive detection using electrochemical impedance spectroscopy. Owing to excellent electrostatic attractions and electrochemical interactions between the copper-based MOF and PFAS, confirmed by high-resolution spectroscopy and theoretical simulations, the MOF-based sensor reported herein exhibits excellent affinity and sensitivity toward perfluorinated acids at concentrations as low as 0.002 ng/L.
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Strain is a widely used strategy for electrocatalyst engineering. Overstraining, however, can lead to unintentional materials transformation. We investigate the impact of strain on the surface morphology of a rutile RuO 2 (110) film grown on a symmetry-matching rutile TiO 2 (110) substrate. When the film thickness exceeds 9 nm, the RuO 2 surface relaxes by forming step edges that expose the {011} plane. Density functional theory (DFT) calculation shows that the (011) facet is among the lower energy surfaces of rutile RuO 2 , suggesting that this formation incurs minimal energetic penalties. In situ atomic force microscopy (AFM) shows that the film maintains the (110) structure of the terrace during electrochemistry. Inductively coupled plasma–mass spectrometry (ICP-MS) further reveals the insensitivity of the Ru dissolution to strain. Here, our findings show a strain-relieving pathway via surface reconstruction in RuO 2 (110) and provide an example of a strain-relieving mechanism that does not affect dissolution.
In the Acknowledgements section of this article the grant number relating to NSF was incorrectly given as DMR 2045826 and should have been DMR-2045826. The original article has been corrected.
An outstanding challenge in developing a complete equation of state for materials at elevated pressure and temperature is a robust method of determining the bulk temperature state under dynamic conditions. In metals, the determination of bulk temperature states by optical pyrometry is complicated by the small optical depth and thermal conduction effects. These effects lead to observed temperatures differing by 20% or more from the bulk temperature state. In this work, we show the presence of thermal conduction effects in temperature measurements of tin and iron coatings during dynamic compression experiments. We demonstrate that tin, in contrast to iron, coatings can fail to converge to a bulk temperature source over the time scale of the experiment, requiring the experimenter to modify assumptions, design, or analysis. This work bounds thermal transport at shocked conditions.
The change in the interplanar spacing ( d -spacing) including the ferroelectric orthorhombic (O) phase in the low-temperature fabricated Hf x Zr 1-x O 2 (HZO) films was studied using synchrotron grazing-incidence wide-angle x-ray scattering analysis. The 10-nm-thick HZO films were fabricated by thermal and plasma-enhanced atomic layer deposition (TH- and PE-ALD) methods using H 2 O gas and O 2 plasma as oxidants, respectively, and a post-metallization annealing (PMA) was performed at 300–400 °C. The d -spacing of the mixture of (111)-, (101)-, and (111)-planes of O, tetragonal (T), and cubic (C) phases, respectively, for the TH- and PE-ALD HZO films increased up to 2.99 Å with an increase in PMA temperature, while the d -spacing estimated by conventional x-ray diffraction was 2.92 Å regardless of the PMA temperature. The remanent polarization (2 P r = P r + - P r - ) of the HZO films increased as the PMA temperature increased. It is clear that the 2 P r value satisfied a linear relationship as a function of the d -spacing of O(111)/T(101)/C(111) phases. Furthermore, the wake-up effect was found to depend on the ferroelectric O phase formation. The wake-up effect was significantly reduced in both the TH- and PE-ALD HZO films after the PMA at 400 °C due to the increase in the ferroelectric O phase formation. The leakage current density ( J )–electric field properties of the PE-ALD HZO film with the lowest d -spacing were divided into three steps, such as low, middle, and large J values, in the wake-up (10 3 cycles), pristine (10 0 cycle), and fatigue (10 7 cycles) states, respectively. Therefore, an analysis of the ferroelectric O phase is very important for understanding the ferroelectricity including endurance.
The elastic moduli of amorphous and crystalline atomic layer-deposited Hf 1-x Zr x O 2 (HZO, x = 0, 0.31, 0.46, 0.79, 1) films prepared with TaN electrodes on silicon substrates were investigated using picosecond acoustic measurements. The moduli of the amorphous films were observed to increase between 211 ± 6 GPa for pure HfO 2 and 302 ± 9 GPa for pure ZrO 2 . In the crystalline films, it was found that the moduli increased upon increasing the zirconium composition from 248 ± 6 GPa for monoclinic HfO 2 to 267 ± 9 GPa for tetragonal ZrO 2 . Positive deviations from this increase were observed for the Hf 0.69 Zr 0.31 O 2 and Hf 0.54 Zr 0.46 O 2 compositions, which were measured to have moduli of 264 ± 8 GPa and 274 ± 8 GPa, respectively. These two compositions contained the largest fractions of the ferroelectric orthorhombic phase, as assessed from polarization and diffraction data. The biaxial stress states of the crystalline films were characterized through sin 2 (ψ) x-ray diffraction analysis. The in-plane stresses were all found to be tensile and observed to increase with the increasing zirconium composition, between 2.54 ± 0.6 GPa for pure HfO 2 and 5.22 ± 0.5 GPa for pure ZrO 2 . The stresses are consistent with large thermal expansion mismatches between the HZO films and silicon substrates. Furthermore, these results demonstrate a device-scale means to quantify biaxial stress for investigation on its effect on the ferroelectric properties of hafnia-based materials.