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At least 1,297 records · Page 72

Hall effect study of electron irradiated Si(Li)

Measurement of the Hall coefficient as a function of temperature between 15 and 300 K allows the separate determination of donor and acceptor concentrations in silicon samples which were irradiated at 240 K by 1-MeV electrons and then thermally annealed at 300 K. In both lithium- and phosphorus-doped silicon irradiation increased the acceptor concentration and decreased the donor concentration due to the formation of vacancy donor pairs. Annealing did not change either concentration in phosphorus-doped silicon and caused both concentrations to decrease in silicon doped with moderate amounts of lithium. In addition to this, in both lithium- and phosphorus-doped silicon the concentration and energy level of the A center were measured at each point in the sample's history. This experiment was limited to float-zoned silicon doped with less than 6 x 10 to the 14th power donors per cu cm.

Stannard, J.↗

Radiation-induced extrinsic photoconductivity in Li-doped Si.

Investigation of the effects of lithium on radiation-produced complexes having long-time stability by examining the localized energy levels in the forbidden gap which give rise to extrinsic photoconductivity. The levels are found to disappear and in some cases shift with annealing in the 100-450 C temperature range. Due to the complexity of the system and the present lack of adequate theory, no complete analysis of the data obtained could be made.

Fenimore, E.↗

Si(Li) position sensitive detector

A position sensitive detector was made using the lithium diffused layer of a lithium-drifted-silicon detector as the uniform resistive layer. An expression is derived for estimating the resistance from the thickness of the lithium layer. Expressions for the noise and ballistic deficit for single differentiation-double integration pulse shaping are presented. Room temperature data for a 1 Mev proton beam on a 45 mm long detector shows that the linearity is better than .05% and that the position resolution is 1.06 + or - .05 mm.

Gigante, J. R.↗

MAR-SI, Martin Surface Insulation

The development of an alumina/silicate based composite material for space shuttle reusable surface insulation is reported. Physical property determinations, environmental testing, design analysis, and projected costs for a thermal protection system are outlined.

Plank, P. P.↗

O-18/O-16 and Si-30/Si-28 studies of some Apollo 15, 16, and 17 samples

A study of lunar rock samples from eight sites on the near side of the moon showed oxygen isotope abundance variations much smaller than those in meteorites and earth material. The grain-surface coatings of the lunar fines were found to be generally depleted in oxygen relative to silicon. The lunar soils, on the other hand, were somewhat richer in both O18 and Si30 than the lunar crystalline rock.

Taylor, H. P., Jr.↗

Crack nucleation in Fe-3% Si in a hydrogen environment

An investigation has been made of the grain-size and strain-rate dependence of the crack nucleation process in iron-3% silicon polycrystals tested in a low-pressure hydrogen environment. The results are compared with similar observations made in an air environment and are discussed in terms of the role of hydrogen on the process of crack nucleation in iron.

Kamdar, M. H.↗

Glass-Si heterojunction solar cells

An increase in efficiency from 2% to over 7% was achieved by a solar cell that used polycrystal silicon heterojunction with SnO2 glass. For Single crystal substrates, efficiencies close to 10% were measured. These cells had the same structures as polycrystalline cells. Work on p+/n heterojunction using In2O3 glass resulted in cells of 3% efficiency on polycrystalline material and 4% efficiency on single crystal material.

Ahrons, R. W.↗

Effect of interfacial oxide layers on the current-voltage characteristics of Al-Si contacts

Aluminum-silicon contacts with very thin interfacial oxide layers and various surface impurity concentrations are studied for both n and p-type silicon. To determine the surface impurity concentrations on p(+)-p and n(+)-n structures, a modified C-V technique was utilized. Effects of interfacial oxide layers and surface impurity concentrations on current-voltage characteristics are discussed based on the energy band diagrams from the conductance-voltage plots. The interfacial oxide and aluminum layer causes image contrasts on X-ray topographs.

Porter, W. A.↗

Analysis of GaAs and Si solar energy hybrid systems

Various silicon hybrid systems are modeled and compared with a gallium arsenide hybrid system. The hybrid systems modeled produce electric power and also thermal power which can be used for heating or air conditioning. Various performance indices are defined and used to compare the system performance: capital cost per electric power out; capital cost per total power out; capital cost per electric power plus mechanical power; annual cost per annual electric energy; and annual cost per annual electric energy plus annual mechanical work. These performance indices indicate that concentrator hybrid systems can be cost effective when compared with present day energy costs.

Heinbockel, J. H.↗

Observed and theoretical profiles of the Si II lines at lambda 1814

Emission line spectra observed at the limb of the solar disc are presented for transitions of singly ionized silicon at lambdas 1816.93, 1817.45 and 1808.01. The profiles show self-reversals in the line cores. A non-LTE analysis for a simplified model of the silicon ion is presented, and calculated line profiles are compared with the observations. The study indicates that some modification of the Vernazza et al. (1973) model of the solar chromosphere in the transition region is needed to reconcile the calculated and observed profiles.

Finn, G. D.↗