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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,297 records · Page 72
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

The ability to recreate synaptic functionalities in synthetic circuit elements is essential for neuromorphic computing systems that seek to emulate the cognitive powers of the brain with comparable efficiency and density. To date, silicon-based three-terminal transistors and two-terminal memristors have been widely used in neuromorphic circuits, in large part due to their ability to co-locate information processing and memory. Yet these devices cannot achieve the interconnectivity and complexity of the brain because they are power-hungry, fail to mimic key synaptic functionalities, and suffer from high noise and high switching voltages. To overcome these limitations, we have developed and characterized a biomolecular memristor that mimics the composition, structure, and switching characteristics of biological synapses. Here, we describe the process of assembling and characterizing biomolecular memristors consisting of a 5 nm-thick lipid bilayer formed between lipid-functionalized water droplets in oil and doped with voltage-activated alamethicin peptides. While similar assembly protocols have been used to investigate biophysical properties of droplet-supported lipid membranes and membrane-bound ion channels, this article focuses on key modifications of the droplet interface bilayer method essential for achieving consistent memristor performance. Specifically, we describe the liposome preparation process and the incorporation of alamethicin peptides in lipid bilayer membranes, and the appropriate concentrations of each constituent as well as their impact on the overall response of the memristors. As a result, we also detail the characterization process of biomolecular memristors, including measurement and analysis of memristive current-voltage relationships obtained via cyclic voltammetry, as well as short-term plasticity and learning in response to step-wise voltage pulse trains.

97 MATHEMATICS AND COMPUTING↗
NASA NTRS2019

Performance Evaluation of High-Speed, Low-Side Gate Driver, FAN3122, over Extended Temperature Range

Emerging power metal-oxide semiconductor field-effect transistor (MOSFETs) based on silicon carbide and gallium nitride technology are finding widespread use in many electronic applications such as motor control and DC/DC converters due to their higher voltage, higher temperature tolerance, and higher frequency switching capabilities. To utilize these power devices and to meet circuit/system compactness, modularity, and operational functionality, gate drivers that provide unique attributes, such as fast switching and high-current handling capability, are needed. In addition, power systems geared for use in space mission applications require on-board devices to withstand exposure to extreme temperatures and wide thermal swings. Very little data, however, exist on the performance of such devices and circuits under extreme temperatures. In this work, the performance of a high-speed gate driver with potential use in controlling power-level transistors was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance for potential use of this device in space exploration missions under extreme temperature conditions.

Wide Bandgap Semiconductors↗
NASA NTRS2011

Qualification of emerging point-of-load regulators for next generation power systems

As demand for high-speed, on-board, digital-processing integrated circuits (ICs) on spacecraft increases (FPGAs and DSPs in particular), the need for the next generation point-of-load (POL) regulator becomes a prominent design issue. Shrinking process nodes have resulted in core rails dropping to values close to 1.0 V, drastically reducing margin to standard switching converters or regulators that power digital ICs. The objectives of this study are to first identify reliability issues or additional space reliability requirements that might not be addressed for commercial application of POL converters; second, to study the performances of existing or emerging POL converters (including linear regulators) within a practical two-stage power distribution architecture; and, finally, to identify points of failure at extreme temperatures (low and high) beyond specifications.

Leon, Rosa↗
DOE OSTI2018

Decentralized Interleaving of Parallel-Connected Buck Converters

We present a decentralized control strategy that yields switch interleaving for parallel-connected dc-dc buck converters. Compared to state-of-the-art methods that are distributed at best, the proposed architecture requires no communication, and hence, presents a variety of advantages with regard to reliability, modularity, and cost. The method is based on the digital implementation of the dynamics of a Lienard-type oscillator circuit as the controller for the converters. Each controller only requires the locally measured output current to synthesize the pulsewidth modulation (PWM) carrier waveform. The intrinsic electrical coupling between converters drives the nonlinear-oscillator-based controllers to converge to an interleaved state with uniform phase spacing across PWM carriers, independent of the number of converters, the load, and initial conditions. We provide analytical guarantees for existence and stability of the interleaved state as well as extensive hardware results for a system of five 120 W 48 V-to-12 V dc-dc buck converters that demonstrate convergence to the interleaved state in the face of a variety of large-signal disturbances.

24 POWER TRANSMISSION AND DISTRIBUTION↗
NASA NTRS1992

Autonomous power system brassboard

The Autonomous Power System (APS) brassboard is a 20 kHz power distribution system which has been developed at NASA Lewis Research Center, Cleveland, Ohio. The brassboard exists to provide a realistic hardware platform capable of testing artificially intelligent (AI) software. The brassboard's power circuit topology is based upon a Power Distribution Control Unit (PDCU), which is a subset of an advanced development 20 kHz electrical power system (EPS) testbed, originally designed for Space Station Freedom (SSF). The APS program is designed to demonstrate the application of intelligent software as a fault detection, isolation, and recovery methodology for space power systems. This report discusses both the hardware and software elements used to construct the present configuration of the brassboard. The brassboard power components are described. These include the solid-state switches (herein referred to as switchgear), transformers, sources, and loads. Closely linked to this power portion of the brassboard is the first level of embedded control. Hardware used to implement this control and its associated software is discussed. An Ada software program, developed by Lewis Research Center's Space Station Freedom Directorate for their 20 kHz testbed, is used to control the brassboard's switchgear, as well as monitor key brassboard parameters through sensors located within these switches. The Ada code is downloaded from a PC/AT, and is resident within the 8086 microprocessor-based embedded controllers. The PC/AT is also used for smart terminal emulation, capable of controlling the switchgear as well as displaying data from them. Intelligent control is provided through use of a T1 Explorer and the Autonomous Power Expert (APEX) LISP software. Real-time load scheduling is implemented through use of a 'C' program-based scheduling engine. The methods of communication between these computers and the brassboard are explored. In order to evaluate the features of both the brassboard hardware and intelligent controlling software, fault circuits have been developed and integrated as part of the brassboard. A description of these fault circuits and their function is included. The brassboard has become an extremely useful test facility, promoting artificial intelligence (AI) applications for power distribution systems. However, there are elements of the brassboard which could be enhanced, thus improving system performance. Modifications and enhancements to improve the brassboard's operation are discussed.

Merolla, Anthony↗
DOE OSTI2017

Differential voltage amplification from ferroelectric negative capacitance

Here, we demonstrate that a ferroelectric can cause a differential voltage amplification without needing an external energy source. As the ferroelectric switches from one polarization state to the other, a transfer of energy takes place from the ferroelectric to the dielectric, determined by the ratio of their capacitances, which, in turn, leads to the differential amplification. This amplification is very different in nature from conventional inductor-capacitor based circuits where an oscillatory amplification can be observed. The demonstration of differential voltage amplification from completely passive capacitor elements only has fundamental ramifications for next generation electronics.

42 ENGINEERING↗
DOE OSTI2025

On-demand magnon resonance isolation in cavity magnonics

Cavity magnonics is a promising field focusing on the interaction between spin waves (magnons) and other types of signal. In cavity magnonics, isolation of magnons from the cavity to allow signal storage and processing fully in the magnonic domain is highly desired, but its realization is often hindered by the lack of necessary tunability of the interaction. This work shows that by using the collective mode of two yttrium iron garnet spheres and applying Floquet engineering, magnonic signals can be switched on demand to a magnon dark mode that is protected from the environment, enabling a variety of manipulation over the magnon dynamics. Furthermore, our demonstration can be scaled up to systems with an array of magnonic resonators, paving the way for large-scale programmable hybrid magnonic circuits.

42 ENGINEERING↗
NASA NTRS2004

Class E/F switching power amplifiers

The present invention discloses a new family of switching amplifier classes called class E/F amplifiers. These amplifiers are generally characterized by their use of the zero-voltage-switching (ZVS) phase correction technique to eliminate of the loss normally associated with the inherent capacitance of the switching device as utilized in class-E amplifiers, together with a load network for improved voltage and current wave-shaping by presenting class-F.sup.-1 impedances at selected overtones and class-E impedances at the remaining overtones. The present invention discloses a several topologies and specific circuit implementations for achieving such performance.

Hajimiri, Seyed-Ali↗
NASA NTRS2011

Reconfigurable Microwave Phase Delay Element for Frequency Reference and Phase-Shifter Applications

A technique was developed to provide a reconfigurable high-precision micro - wave electrical phase delay for resonators and phase shifters. The invention employs multiple branches of transmission lines with open-ended or ground-ended terminations as configurable bits or digits. This technique minimizes the errors due to limited precision of switching devices. In addition, the proposed linear analytical approach significantly produces a much simpler design than that of other prior inventions at the time of this reporting. Microwave components such as filters, phase delay elements, or resonators require a method that can accurately adjust their frequency responses. Most tuning techniques offer very wide frequency tuning range; however, it is often difficult and expensive to tune their response in a very narrow operating frequency, especially when the tuning element reaches its minimum discrete step due to fabrication tolerances. The problem becomes worse as the operating frequency is in mm-wave frequency range (>26 GHz). The electrical tuning sensitivity of a microwave line is dependent on the position of the tuning element with respect to the reference termination. By placing this tuning element away from this reference with the main transmission line connecting the two elements together the sensitivity of the tuning element can change significantly. This concept can be used in the system that requires multiple tuning sensitivities. In this case, multiple tuning branches are superimposed in the main transmission line. The proposed invention allows the transmission-line electrical length to be accurately programmed using switching elements that have limited accuracy. The invention consists of multiple branches of transmission lines connected to discrete switching devices with open-ended terminations. They are used as discrete tuning elements. These elements are connected to the main microwave transmission line and are separated by a well-defined electrical degree spacing. Each branch is programmed to have different electrical degree sensitivity, such as a combination of discrete steps in each branch, which results in a reflective line with a unique effective phase response. To reduce the number of switching devices, it is desirable to program the devices in binary configuration where each branch represents one bit in the base-2 number system. This invention allows the transmission line electrical length to be tuned precisely with customizable sensitivity based on the known sensitivity of the base tuning circuit. The tuning resolution is dependent on the distance among tuning branches.

Hsieh, Wen-Ting↗
DOE OSTI2011

Structural Dependence of Grain Boundary Resistance in Copper Nanowires

The current choice of the interconnect metal in integrated circuits is copper due to its higher electrical conductivity and improved electromigration reliability in comparison with aluminum. However, with reducing feature sizes, the resistance of copper interconnects (lines) increases dramatically. Greater resistance will result in higher energy use, more heat generation, more failure due to electromigration, and slower switching speeds. To keep pace with the projected planar transistor density, the first challenge is to identify the dominant factors that contribute to the high interconnect resistance. Here we directly measure individual grain boundary (GB) resistances in copper nanowires with a one-to-one correspondence to the GB structure. The specific resistivities of particular GBs are measured using four-probe scanning tunneling microscopy (STM) to establish a direct link between GB structure and the resistance. High-angle random GBs contribute to a specific resistivity of about 25 10-12 cm2 for each boundary, while coincidence boundaries are significantly less-resistive than random boundaries. Thus, replacing random boundaries with coincidence ones would be a route to suppress the GB impact to the resistivity of polycrystalline conductors. Acknowledgement: The research was supported by the Division of Scientific User Facilities, U. S. Department of Energy.

Kim, Tae Hwan↗
DOE OSTI2024

A nanoscale photonic thermal transistor for sub-second heat flow switching

Abstract Control of heat flow is critical for thermal logic devices and thermal management and has been explored theoretically. However, experimental progress on active control of heat flow has been limited. Here, we describe a nanoscale radiative thermal transistor that comprises of a hot source and a cold drain (both are ~250 nm-thick silicon nitride membranes), which are analogous to the source and drain electrodes of a transistor. The source and drain are in close proximity to a vanadium oxide (VO x )-based planar gate electrode, whose dielectric properties can be adjusted by changing its temperature. We demonstrate that when the gate is located close ( < ~1 µm) to the source-drain device and undergoes a metal-insulator transition, the radiative heat transfer between the source and drain can be changed by a factor of three. More importantly, our nanomembrane-based thermal transistor features fast switching times ( ~ 500 ms as opposed to minutes for past three-terminal thermal transistors) due to its small thermal mass. Our experiments are supported by detailed calculations that highlight the mechanism of thermal modulation. We anticipate that the advances reported here will open new opportunities for designing thermal circuits or thermal logic devices for advanced thermal management.

42 ENGINEERING↗
DOE OSTI2011

Detection of THz radiation with devices made from wafers with HgTe and InSb quantum wells

In this study we present measurements of the Terahertz (THz) photoconductivity of 2D electron system realized at HgTe/HgCdTe and AlInSb/InSb/AlInSb quantum wells (QWs) in Corbino geometry (inner and outer radius: 500 {mu}m and 1500 {mu}m) with different mobilities and electron densities. To characterize the devices, the Shubnikov-de Haas (SdH) effect up to magnetic fields B of 7T and current-voltage (I-V) characteristics at various magnetic fields were measured. The THz radiation is provided by a p-Ge laser which operates with a magnetic field and a high voltage for the electrical pumping. The stimulated emission is caused by transitions between Landau levels of light holes [1]. The laser is tunable in the range between 1.7 to 2.5 THz (corresponding to wavelengths between 120 to 180 {mu}m or energies of 7 to 12 meV). The laser is pulsed with a pulse rate of 1 Hz and pulse lengths of about 1 {mu}s with low switching times (about 20 ns). The monochromatic THz radiation is transferred to our samples via a 0.32m long brass waveguide immersed in liquid Helium. The detection of a change in the conductivity of the sample due to absorption of THz-radiation (photoresponse) requires a low-noise circuit. For the Corbino-shaped samples the photoresponse (PR) is measured via a resistor R{sub V} of 1 k{Omega}. The signal is transferred via in a high-frequency cable and detected with a digital oscilloscope.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Molecularly Thin Electrolyte for All Solid-State Nonvolatile Two-Dimensional Crystal Memory

A molecularly thin electrolyte is developed to demonstrate a nonvolatile, solid-state, one-transistor (1T) memory based on an electric-double-layer (EDL) gated WSe 2 field-effect transistor (FET). The custom-designed monolayer electrolyte consists of cobalt crown ether phthalocyanine and lithium ions, which are positioned by field-effect at either the surface of the WSe 2 channel or an h-BN capping layer to achieve “1” or “0”, respectively. Bistability in the monolayer electrolyte memory is significantly improved by the h-BN cap with density functional theory (DFT) calculations showing enhanced trapping of Li+ near h-BN due to a ~1.34 eV increase in the absolute value of the adsorption energy compared to vacuum. The threshold voltage shift between the two states corresponds to a change in charge density of ~2.5 × 10 12 cm –2 , and an On/Off ratio exceeding 10 4 at a back gate voltage of 0 V. The On/Off ratio remains stable after 1000 cycles and the retention time for each state exceeds 6 h (max measured). Furthermore, when the write time approaches 1 ms, the On/Off ratio remains >10 2 , showing that the monolayer electrolyte-gated FET can respond on time scales similar to existing flash memory. The data suggest that faster switching times and lower switching voltages could be feasible by top gating.

2D crystal↗
NASA NTRS1987

Diode Structure for Microwave and Infrared Applications

Microwave signals switched or modulated optically. Planar diode with transparent cathode made in BaAs, Si, and InSb versions. Depending on specific configuration and material, such diode used for optical modulation of microwave signal or as infrared detector. Transparent cathode fabricated on GaAs diode so diode illuminates to generate and control short-circuit current.

Alcorn, George↗
NASA NTRS1991

Noise characteristics of passive components for phased array applications

The results of a comparative study on noise characteristics of basic power combining/dividing and phase shifting schemes are presented. The theoretical basics of thermal noise in a passive linear multiport are discussed. A new formalism is presented to describe the noise behavior of the passive circuits, and it is shown that the fundamental results are conveniently achieved using this description. The results of analyses concerning the noise behavior of basic power combining/dividing structures (the Wilkinson combiner, 90 deg hybrid coupler, hybrid ring coupler, and the Lange coupler) are presented. Three types of PIN-diode switch phase shifters are analyzed in terms of noise performance.

Sonmez, M. Kemal↗
DOE OSTI2013

Optical set-reset latch

An optical set-reset (SR) latch is formed from a first electroabsorption modulator (EAM), a second EAM and a waveguide photodetector (PD) which are arranged in an optical and electrical feedback loop which controls the transmission of light through the first EAM to latch the first EAM in a light-transmissive state in response to a Set light input. A second waveguide PD controls the transmission of light through the second EAM and is used to switch the first EAM to a light-absorptive state in response to a Reset light input provided to the second waveguide PD. The optical SR latch, which may be formed on a III-V compound semiconductor substrate (e.g. an InP or a GaAs substrate) as a photonic integrated circuit (PIC), stores a bit of optical information and has an optical output for the logic state of that bit of information.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

SiC and GaN Devices With Cryogenic Cooling

This article presents the cryogenically cooled application for wide bandgap (WBG) semiconductor devices. Characteristics of silicon carbide (SiC) and gallium nitride (GaN) at cryogenic temperatures are illustrated. SiC MOSFETs exhibit increased on-state resistance and slower switching speed at cryogenic temperatures. However, cryogenic cooling provides low ambient temperature environment and thus enables the SiC converter to operate at lower junction temperature to achieve higher efficiency compared to room temperature cooling. A cryogenically cooled MW-level SiC inverter prototype is developed and demonstrated the feasibility of operating high-power SiC converter with cryogenic cooling. GaN HEMTs exhibit more than five times on-state resistance reduction and faster switching speed at cryogenic temperatures which makes GaN HEMTs an excellent candidate for cryogenic power electronics applications. The significantly reduced on-state resistance of GaN devices provides the possibility to operate them at a current level much higher than rated current at cryogenic temperatures. A GaN double pulse test (DPT) circuit is constructed and demonstrated that GaN HEMTs can operate at nearly four times of rated current at cryogenic temperatures. Challenges of utilizing WBG device with cryogenic cooling are discussed and summarized.

42 ENGINEERING↗
DOE OSTI2023

The Dynamic Tunability of Memristor-Based Active Filters

When the memristor was fabricated for the first time, it launched an entirely new field of research. Many of the published papers regarding memristors are primarily theoretical and are based on computer simulations. Some recent papers analyze the memristor’s programming circuits, but to the best of the authors’ knowledge, no memristor has been embedded into a commercial analog circuit. This paper is practically oriented and it is based on the experimental results obtained by measurements on the circuit prototype. We present a solution for automated programming of a commercially available memristor and its implementation in tunable active bandpass filter design. The novelty of this paper is that the active bandpass filter’s central frequency could be programmed during the filter operation, so a pause for memristor state-switching is not required. The experimental results are promising, and open up possibilities for the memristor’s application in analog systems.

42 ENGINEERING↗