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At least 1,297 records · Page 72

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NASA NTRS1978

Design considerations for silicon HLE solar cells

The high-low (H-L) junction in the emitter region that defines the high-low-junction emitter (HLE) solar cell suppresses the dark emitter recombination current J sub E so that the base recombination current dominates in determining the open-circuit voltage. For silicon cells this enables the achievement of considerably larger values of open-circuit voltage than those achievable in conventional structures. This paper describes experiments that demonstrate the achievement of J sub E suppression (to less than 5 x 10 to the -14th A/sq cm) and large open-circuit voltage (640 mV) in HLE test cells of two distinct types. In the first type (the diffused HLE structure) impurity diffusion forms the H-L junction in the emitter; in the second type (the oxide-charge-induced HLE structure) the H-L junction is formed in emitter material of relatively low doping concentration by an oxide-charge-induced electron accumulation layer.

Lindholm, F. A.↗

NASA NTRS1978

Photon degradation effects in terrestrial solar cells

A certain type of photon degradation effect has been observed experimentally in n(+)/p solar cells. It is found that this effect is caused by a recombination center, the formation of which requires the simultaneous presence of a lattice defect and a silver atom or complex of atoms. The center is electrically active in its equilibrium state; the energy level of the inactive center is located in the band gap, 0.37 eV below the conduction band. Conversion to an active recombination center can be brought about either by raising the minority carrier quasi-Fermi level to coincide with the position of the latent center level in the band gap or by the direct excitation of electrons from the valence band to the latent center level. Photon degradation can be prevented either by preventing the introduction of silver through the use of a clean diffusion system and clean initial material or by eliminating lattice damage through sufficient surface material removal prior to diffusion while at the same time restricting diffusion temperatures to 875 C or below.

Weizer, V. G.↗

NASA NTRS1979

Associative ionization of N/2D/ and O

Recent laboratory measurements have shown that N(2P) atoms, and thus probably hot N(2D) atoms, will recombine with atomic oxygen via an associative ionization process at the gas kinetic rate. In the present paper the likelihood of the associative ionization of N(2D) and O playing a significant role in the normal ionosphere is investigated in the light of several recent studies. It is concluded that the associative ionization process is not an important factor and that a more probable cause for disagreements in the various determinations of the recombination coefficient, is the difference in excited states of the ions in the various experiments.

Torr, M. R.↗

NASA NTRS1979

Simplified model of a volumetric direct nuclear pumped He-3-Ar laser

A physical model for the volumetric nuclear pumped He-3-Ar laser is described and the source terms arising from the He-3(n, p)H-3 reaction as well as the rate equations are given. Steady state solutions are derived for the densities of the species vs the fraction of argon. The dominant pumping mechanism is found to be collisional radiative recombination of the argon atomic ions and subsequent cascading into the upper laser level. The reactions following recombination are described and an expression is derived for the difference in densities of the argon 3d and 4p levels. Comparison with experiments shows good agreement.

Harries, W. L.↗

NASA NTRS1979

Studies of silicon p-n junction solar cells

To provide theoretical support for investigating different ways to obtain high open-circuit voltages in p-n junction silicon solar cells, an analytical treatment of heavily doped transparent-emitter devices is presented that includes the effects of bandgap narrowing, Fermi-Dirac statistics, a doping concentration gradient, and a finite surface recombination velocity at the emitter surface. Topics covered include: (1) experimental determination of bandgap narrowing in the emitter of silicon p-n junction devices; (2) heavily doped transparent regions in junction solar cells, diodes, and transistors; (3) high-low-emitter solar cell; (4) determination of lifetimes and recombination currents in p-n junction solar cells; (5) MOS and oxide-charged-induced BSF solar cells; and (6) design of high efficiency solar cells for space and terrestrial applications.

Neugroschel, A.↗

NASA NTRS1980

Study of the effects of impurities on the properties of silicon materials and performance of silicon solar cell

Zinc is a major residue impurity in the preparation of solar grade silicon material by the zinc vapor reduction of silicon tetrachloride. It was found that in order to get a 17 percent AMl cell efficiency, the concentration of the zinc recombination centers in the base region of silicon solar cells must be less than 4 x 10 to the 11th power Zn/cu cm in the p-base n+/p/p+ cell and 7 x 10 to the 11th power Zn/cu cm in the n-base p+/n/n+ cell for a base dopant impurity concentration of 5 x 10 to the 14th power atoms/cu cm. If the base dopant impurity concentration is increased by a factor of 10 to 5 x 10 to the 15th power atoms/cu cm, then the maximum allowable zinc concentration is increased by a factor of about two for a 17 percent AMl efficiency. The thermal equilibrium electron and hole recombination and generation rates at the double acceptor zinc cancers were obtained from previous high field measurements as well as new measurements at zero field. The rates were used in the exact d.c. circuit model to compute the projections.

Sah, C. T.↗

NASA NTRS1980

Tailored emitter, low-resistivity, ion-implanted silicon solar cells

Open-circuit voltages as high as 0.645 V (AM0, 25 C) have been obtained by a new process developed for low-resistivity silicon. The process utilizes high-dose phosphorus implantation followed by furnace annealing and simultaneous oxide growth. The effect of the thermally grown oxide is a reduction of surface recombination velocity; the oxide also acts as a moderately efficient antireflection (AR) coating. Boron-doped, float-zone silicon with resistivities from 0.1 to 1.0 (omega)(cm) has been processed according to this sequence; results show that the highest open-circuit voltage is obtained with 0.1(omega)(cm) starting material. The effects of Auger recombination and bandgap narrowing caused by high doping concentrations in the n(+)junction region have been investigated by implanting phosphorus over a wide range of dose levels. The effects of emitter-phosphorus concentrations tailored to optimize electric fields in the emitter have also been investigated.

Minnucci, J. A.↗

NASA NTRS1979

Magnetic diffusion and ionization fractions in dense molecular clouds - The role of charged grains

The physics of magnetic diffusion in dense molecular clouds is examined, with particular attention given to the role of charged grains in controlling the process. The ionization fraction of dense molecular clouds in the presence of grains is determined from considerations of charge exchange, dissociative recombination, radiative recombination and collisions between grains and charged species, and it is found that the inclusion of grains tends to lower the ionization fraction for a given cosmic-ray ionization rate and metal depletion. The kinematics of grain motion is discussed and it is shown that at temperatures less than 30 K, each grain alternates rapidly in charge between -1 and 0 and thus executes periodic motion in a self-gravitating cloud containing a magnetic field. The full kinematics of magnetic diffusion including the motions of ions and electrons are then examined, taking into account the additional viscous force from charged grains, and numerical calculations of the diffusion time scales of uniform, magnetically supported clouds or cloud cores are presented.

Elmegreen, B. G.↗

NASA NTRS1980

Effects of grain boundaries in polycrystalline solar cells

In polycrystalline solar cells, the short-circuit current is reduced (compared to single-crystal cells) due to recombination of minority carriers at the grain boundaries. The magnitude of this reduction is calculated for the case of a monochromatic beam of light, assuming that both the light beam and the grain boundaries are perpendicular to a p-n junction. The photoresponse of the junction is calculated in terms of the absorption coefficient of the light, the minority-carrier diffusion length, the surface recombination velocity at the grain boundary and the distance of the light beam from the grain boundary. The analysis gives an expression for an effective grain boundary width which depends on wavelength. This width determines the reduction in short-circuit current of solar cells made from material with columnar-type grains.

Zook, J. D.↗

NASA NTRS1980

Determination of deep level capture cross sections in wide band-gap semiconductors by means of an electron beam

The paper presents a general theory for the determination of the short circuit current generated by a sinusoidally amplitude-modulated electron beam in the presence of recombination centers with an arbitrary number of charge states. It is shown that a measurement of the coherent phase shift with respect to the incident beam as a function of the modulation frequency of the beam ascertains the magnitudes of electron and hole capture cross sections. The surface exposed to the electron beam must have a negligible surface recombination velocity for the measurements to be unambiguous.

Von Roos, O.↗

NASA NTRS1980

Observations of quasars with the International Ultraviolet Explorer satellite

The paper deals with the spectra of six quasars, ranging in redshift from 0.23 to 2.04, obtained with the 45-cm telescope mounted on the IUE satellite. The average emission-line intensity ratio for L-alpha to H beta and the detection of higher-order Lyman emission lines in two objects are found to be inconsistent with a simple optically thick recombination model. The Lyman and Balmer line velocity profiles are identical. The emission lines in 3C 351 can be decomposed into sharp and broad components, with the sharp lines consistent with the recombination model.

Green, R. F.↗

NASA NTRS1980

Low resolution infrared spectra of quasars

Recent observational results based on a joint infrared/optical survey of the hydrogen line spectra of a significant number of low and high redshift quasars are summarized. The spectra show that the Paschen-alpha and Balmer line ratios do not agree with the result of nominal case B recombination theory and vary widely within the quasars sampled. The range of P-alpha to H-beta ratios is a factor of roughly 6, while the range in Ly-alpha to H-alpha ratios is a factor of roughly 5. For the P-alpha:Balmer series, the deviations from case B recombination are not consistent with reddening, but appear, within large dispersions, to be consistent with optical depth effects in the Balmer lines affecting the lines ratios.

Soifer, B. T.↗

NASA NTRS1981

Free radical propulsion concept

A free radical propulsion concept utilizing the recombination energy of dissociated low molecular weight gases to produce thrust was examined. The concept offered promise of a propulsion system operating at a theoretical impulse, with hydrogen, as high as 2200 seconds at high thrust to power ratio, thus filling the gas existing between chemical and electrostatic propulsion capabilities. Microwave energy used to dissociate a continuously flowing gas was transferred to the propellant via three body recombination for conversion to propellant kinetic energy. Power absorption by the microwave plasma discharge was in excess of 90 percent over a broad range of pressures. Gas temperatures inferred from gas dynamic equations showed much higher temperatures from microwave heating than from electrothermal heating. Spectroscopic analysis appeared to corroborate the inferred temperatures of one of the gases tested.

Hawkins, C. E.↗

NASA NTRS1980

An alternative approach to charge transport in semiconducting electrodes

The excess-carrier charge transport through the space-charge region of a semiconducting electrode is analyzed by a technique known as the flux method. In this approach reflection and transmission coefficients appropriate for a sheet of uniform semiconducting material describe its transport properties. A review is presented of the flux method showing that the results for a semiconductor electrode reduce in a limiting case to those previously found by Gaertner if the depletion layer is treated as a perfectly transmitting medium in which scattering and recombination are ignored. Then, in the framework of the flux method the depletion layer is considered more realistically by explicitly taking into account scattering and recombination processes which occur in this region.

Thomchick, J.↗

NASA NTRS1981

Effect of zinc impurity on silicon solar-cell efficiency

Zinc is a major residue impurity in the preparation of solar-grade silicon material by the zinc vapor reduction of silicon tetrachloride. This paper projects that in order to get a 17-percent AM1 cell efficiency for the Block IV module of the Low-Cost Solar Array Project, the concentration of the zinc recombination centers in the base region of silicon solar cells must be less than 4 x 10 to the 11th Zn/cu cm in the p-base n+/p/p+ cell and 7 x 10 to the 11th Zn/cu cm in the n-base p+/n/n+ cell for a base dopant impurity concentration of 5 x 10 to the 14 atoms/cu cm. If the base dopant impurity concentration is increased by a factor of 10 to 5 x 10 to the 15th atoms/cu cm, then the maximum allowable zinc concentration is increased by a factor of about two for a 17-percent AM1 efficiency. The thermal equilibrium electron and hole recombination and generation rates at the double-acceptor zinc centers are obtained from previous high-field measurements as well as new measurements at zero field described in this paper. These rates are used in the exact dc-circuit model to compute the projections.

Sah, C.-T.↗

NASA NTRS1981

Atomic hydrogen rocket engine

A rocket using atomic hydrogen propellant is discussed. An essential feature of the proposed engine is that the atomic hydrogen fuel is used as it is produced, thus eliminating the necessity of storage. The atomic hydrogen flows into a combustion chamber and recombines, producing high velocity molecular hydrogen which flows out an exhaust port. Standard thermodynamics, kinetic theory and wall recombination cross-sections are used to predict a thrust of approximately 1.4 N for a RF hydrogen flow rate of 4 x 10 to the 22nd/sec. Specific impulses are nominally from 1000 to 2000 sec. It is predicted that thrusts on the order of one Newton and specific impulses of up to 2200 sec are attainable with nominal RF discharge fluxes on the order of 10 to the 22nd atoms/sec; further refinements will probably not alter these predictions by more than a factor of two.

Etters, R. D.↗

NASA NTRS1981

Hot oxygen atoms in the upper atmosphere of Venus

Using data obtained by an ultraviolet spectrometer on the Pioneer-Venus Orbiter, energy and altitude distribution of nonthermal oxygen atoms in the Venus atmosphere for typical daytime and nighttime conditions are calculated using two different numerical methods. Agreement is found between results obtained by the two-stream transport method and the diffusion equation technique. Dissociative recombination of molecular oxygen ions and charge exchange of atomic oxygen ions with the neutral hydrogen and oxygen gas are the source terms, and calculations show that the dissociative recombination term is the dominant one. It is shown that measured hot atom concentrations exceed estimates of the thermal hydrogen atom concentrations derived from Brinton et al. (1980) over most of the daytime exosphere, and the calculated concentrations do so to an even greater extent. It is concluded that hot oxygen atoms are an important component of the dayside exosphere of Venus, their most important effect being the absorption of solar wind.

Nagy, A. F.↗

NASA NTRS1982

Cryogenic masers

Various factors affecting the frequency stability of hydrogen masers are described and related to maser design parameters. The long-term frequency stability of a hydrogen maser is limited by the mechanical stability of the cavity, and the magnitudes of the wall relaxation, spin exchange, and recombination rates which affect the Q of the line. Magnetic resonance studies of hydrogen atoms at temperatures below 1 K and in containers coated with liquid helium films demonstrated that cryogenic masers may allow substantial improvements in all of these parameters. In particular the thermal expansion coefficients of most materials are negligible at 1 K. Spin exchange broadening is three orders of magnitude smaller at 1 K than at room temperature, and the recombination and wall relaxation rates are negligible at 0.52 K where the frequency shift due to the 4 He-coated walls of the container has a broad minimum as a function of temperature. Other advantages of the helium-cooled maser result from the high purity, homogeneity, and resilence of helium-film-coated walls and the natural compatibility of the apparatus with helium-cooled amplifiers.

Berlinsky, A. J.↗