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At least 1,297 records · Page 72

Dynamics of self-reorganization explains passivation of silicate glasses

Understanding the dissolution of silicate glasses and minerals from atomic to macroscopic levels is a challenge with major implications in geoscience and industry. One of the main uncertainties limiting the development of predictive models lies in the formation of an amorphous surface layer––called gel––that can in some circumstances control the reactivity of the buried interface. Here, we report experimental and simulation results deciphering the mechanisms by which the gel becomes passivating. The study conducted on a six-oxide borosilicate glass shows that gel reorganization involving high exchange rate of oxygen and low exchange rate of silicon is the key mechanism accounting for extremely low apparent water diffusivity (~10 –21 m 2 s –1 ), which could be rate-limiting for the overall reaction. Furthermore, these findings could be used to improve kinetic models, and inspire the development of new molecular sieve materials with tailored properties as well as highly durable glass for application in extreme environments.

36 MATERIALS SCIENCE↗

Low-divergence femtosecond X-ray pulses from a passive plasma lens

Electron and X-ray beams originating from compact laser-wakefield accelerators have very small source sizes that are typically on the micrometre scale. Therefore, the beam divergences are relatively high, which makes it difficult to preserve their high quality during transport to applications. To improve on this, tremendous efforts have been invested in controlling the divergence of the electron beams, but no mechanism for generating collimated X-ray beams has yet been demonstrated experimentally. Here we propose and realize a scheme where electron bunches undergoing focusing in a dense, passive plasma lens can emit X-ray pulses with divergences approaching the incoherent limit. Furthermore, compared with conventional betatron emission, the divergence of this so-called plasma lens radiation is reduced by more than an order of magnitude in solid angle, while maintaining a similar number of emitted photons per electron. This X-ray source offers the possibility of producing brilliant and collimated few-femtosecond X-ray pulses for ultra-fast science, in particular for studies based on X-ray diffraction and absorption spectroscopy.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Quantitative imaging and automated fuel pin identification for passive gamma emission tomography

Compliance of member States to the Treaty on the Non-Proliferation of Nuclear Weapons is monitored through nuclear safeguards. The Passive Gamma Emission Tomography (PGET) system is a novel instrument developed within the framework of the International Atomic Energy Agency (IAEA) project JNT 1510, which included the European Commission, Finland, Hungary and Sweden. The PGET is used for the verification of spent nuclear fuel stored in water pools. Advanced image reconstruction techniques are crucial for obtaining high-quality cross-sectional images of the spent-fuel bundle to allow inspectors of the IAEA to monitor nuclear material and promptly identify its diversion. In this work, we have developed a software suite to accurately reconstruct the spent-fuel cross sectional image, automatically identify present fuel rods, and estimate their activity. Unique image reconstruction challenges are posed by the measurement of spent fuel, due to its high activity and the self-attenuation. While the former is mitigated by detector physical collimation, we implemented a linear forward model to model the detector responses to the fuel rods inside the PGET, to account for the latter. The image reconstruction is performed by solving a regularized linear inverse problem using the fast-iterative shrinkage-thresholding algorithm. We have also implemented the traditional filtered back projection (FBP) method based on the inverse Radon transform for comparison and applied both methods to reconstruct images of simulated mockup fuel assemblies. Higher image resolution and fewer reconstruction artifacts were obtained with the inverse-problem approach, with the mean-square-error reduced by 50%, and the structural-similarity improved by 200%. We then used a convolutional neural network (CNN) to automatically identify the bundle type and extract the pin locations from the images; the estimated activity levels finally being compared with the ground truth. The proposed computational methods accurately estimated the activity levels of the present pins, with an associated uncertainty of approximately 5%.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Passive high explosive neutron inspection (PHENIX): a new method to confirm the presence or absence of high explosives for nuclear treaty verification

Advanced instruments and methods need to be developed now to create a technical basis to support the negotiation of future nuclear arms control treaties. One new capability that is anticipated is the ability to confirm either the declared presence or declared absence of high explosive (HE) material in the presence of special nuclear material (SNM). Towards this goal, Passive HE Neutron Inspection (PHENIX) has been developed and demonstrated as a method for confirming the presence or absence of HE in the presence of plutonium. The method exploits the inherent presence of neutrons associated with the decay of plutonium as an internal probe source for performing prompt gamma-ray neutron activation analysis (PGNAA), searching for the presence of HE as revealed by the emission of characteristic gamma rays following neutron absorption in hydrogen and nitrogen which are building blocks of present-day, military-grade HE. Tests using stoichiometrically-correct hemishells of mock HE with plutonium show that a system can be expected to positively confirm the presence or absence of these signatures, supporting determination of HE presence or absence with Pu, in a few hours. To protect other potentially sensitive gamma-ray signatures from a treaty accountable item, an analog information barrier has been conceptualized and tested which physically prevents the collection of gamma-ray spectral data outside of user selected energy windows strategically chosen to view only narrow spectral regions corresponding to the hydrogen (2223.2 keV) and nitrogen (9807.2 keV, 10,318.2 keV, and 10,829.2 keV) PGNAA signatures.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Strain engineering of doped hydrogen passivated silicon quantum dots

Silicon quantum dots are nanomaterials that are attractive candidates for photovoltaic applications. Doping of these materials creates p-n junctions and is important for solar cells. In this work, we present a first-principles study of the coupled influence of doping and strain on the stability, energy gap, Fermi level, electronic density, and density of states of hydrogen-passivated silicon quantum dots. We find that the cohesive energy and the energy gap decrease with increasing quantum dot size and are strongly influenced by strain. Furthermore, the response to strain also depends on the size of the quantum dot and dopant type. We present expressions of cohesive energy and energy gap as power-law of size and polynomial dependence on strain. We also show that the Fermi energy increases with size for pristine and p-type doping but decreases with size for n-type doping. We also discuss the influence of strain and dopant type on the density of states and electron density of the quantum dots.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Nanocrystal heterostructures of LiCoO 2 with conformal passivating shells

Stabilization of electrode–electrolyte interfaces is required to increase the energy stored in battery electrodes. Introducing redox-inactive ions on the electrode surface minimizes deleterious side reactions without affecting the bulk properties. A synthetic challenge exists to grow such layers conformally at each primary particle, to fully passivate interfaces that are buried in the final electrode architecture. The development of methods of sequential colloidal growth of complex oxides and overlayers, enabled by surfactant interactions, would provide novel means to advance toward this goal. For this, nanocrystals composed of LiCoO 2 , a commercially relevant material for high energy devices, were grown with a shell enriched in Al 3+ , deposited conformally through a one-pot colloidal synthetic method. The effects of synthetic conditions on the composition of the Al-rich shell and the corresponding electrochemical performance were investigated. The modified nanocrystals showed enhanced electrochemical properties, while maintaining carrier transport.

25 ENERGY STORAGE↗

All-day passive radiative cooling using common salts

An infrared transparent foam made from inexpensive salts was developed enabling sub-ambient cooling of underlying surfaces for a full 24 hour cycle. This work showcases how non-convetional materials may be used for passive day-time radiative cooling.

36 MATERIALS SCIENCE↗

Photosynthesis of CO from CO 2 with an iron polypyridyl catalyst at a passivated silicon photoelectrode

A first-row transition metal catalyst, [Fe(tpy)(Mebim-py)(NCCH 3 )] 2+ (tpy = 2,2′:6′,2′′-terpyridine, Mebim-py = 1-methylbenzimidazol-2-ylidene-3-(2′-pyridine)) mediates CO 2 reduction to CO at passivated p-Si photoelectrodes with applied potentials 240 mV positive of the standard CO 2 /CO reduction potential. The molecular catalyst's selectivity for CO was retained under photoelectrochemical conditions, with negligible direct proton reduction promoted by the photoelectrode. The faradaic efficiency for CO (44 ± 6%) was slightly enhanced relative to the catalyst performance in the dark (33%). A photosynthetic cell based on this photocathode system, coupled with ferrocene oxidation at the anode, successfully operated at a cell voltage of −1.2 V. The photovoltage generated by illumination of p-Si–CH 3 met and surpassed the potential required for CO 2 reduction when coupled with ferrocene oxidation. By leveraging a low-overpotential CO 2 reduction electrocatalyst, a photo-assisted electrochemical efficiency of 0.15% and applied bias photon-to-current efficiency of 0.05% was achieved for this single-junction cell, ultimately storing 46 kJ mol −1 (11 kcal mol −1 ) of photon energy.

Carbon Dioxide Reduction↗

Core-ion temperature measurement of the ADITYA tokamak using passive charge exchange neutral particle energy analyzer

Core-ion temperature measurements have been carried out by the energy analysis of passive charge exchange (CX) neutrals escaping out of the ADITYA tokamak plasma (minor radius, a= 25 cm and major radius, R= 75 cm) using a 45 Degree-Sign parallel plate electrostatic energy analyzer. The neutral particle analyzer (NPA) uses a gas cell configuration for re-ionizing the CX-neutrals and channel electron multipliers (CEMs) as detectors. Energy calibration of the NPA has been carried out using ion-source and {Delta}E/E of high-energy channel has been found to be {approx}10%. Low signal to noise ratio (SNR) due to VUV reflections on the CEMs was identified during the operation of the NPA with ADITYA plasma discharges. This problem was rectified by upgrading the system by incorporating the additional components and arrangements to suppress VUV radiations and improve its VUV rejection capabilities. The noise rejection capability of the NPA was experimentally confirmed using a standard UV-source and also during the plasma discharges to get an adequate SNR (>30) at the energy channels. Core-ion temperature T{sub i}(0) during flattop of the plasma current has been measured to be up to 150 eV during ohmically heated plasma discharges which is nearly 40% of the average core-electron temperature (typically T{sub e}(0) {approx} 400 eV). The present paper describes the principle of tokamak ion temperature measurement, NPA's design, development, and calibration along with the modifications carried out for minimizing the interference of plasma radiations in the CX-spectrum. Performance of the NPA during plasma discharges and experimental results on the measurement of ion-temperature have also been reported here.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Passive runaway electron suppression in tokamak disruptions

Runaway electrons created in disruptions pose a serious problem for tokamaks with large current. It would be desirable to have a runaway electron suppression method which is passive, i.e., a method that does not rely on an uncertain disruption prediction system. One option is to let the large electric field inherent in the disruption drive helical currents in the wall. This would create ergodic regions in the plasma and increase the runaway losses. Whether these regions appear at a suitable time and place to affect the formation of the runaway beam depends on disruption parameters, such as electron temperature and density. We find that it is difficult to ergodize the central plasma before a beam of runaway current has formed. However, the ergodic outer region will make the Ohmic current profile contract, which can lead to instabilities that yield large runaway electron losses.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Low repetition rate and broad frequency tuning from a grating-coupled passively mode-locked quantum dot laser

Passively mode-locked quantum dot lasers with a grating-coupled external cavity arrangement are investigated. A broad repetition-rate tuning range of fundamental mode-locking from 2 GHz to a record-low frequency of 79.3 MHz is achieved with selecting the wavelength at 1.28 μm. A narrow RF linewidth of ∼25 Hz and an intrinsic linewidth as low as 0.15 Hz are also obtained.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

A numerical simulation study of gallium-phosphide/silicon heterojunction passivated emitter and rear solar cells

The performance of passivated emitter and rear (PERC) solar cells made of p-type Si wafers is often limited by recombination in the phosphorus-doped emitter. To overcome this limitation, a realistic PERC solar cell is simulated, whereby the conventional phosphorus-doped emitter is replaced by a thin, crystalline gallium phosphide (GaP) layer. The resulting GaP/Si PERC cell is compared to Si PERC cells, which have (i) a standard POCl{sub 3} diffused emitter, (ii) a solid-state diffused emitter, or (iii) a high efficiency ion-implanted emitter. The maximum efficiencies for these realistic PERC cells are between 20.5% and 21.2% for the phosphorus-doped emitters (i)–(iii), and up to 21.6% for the GaP emitter. The major advantage of this GaP hetero-emitter is a significantly reduced recombination loss, resulting in a higher V{sub oc}. This is so because the high valence band offset between GaP and Si acts as a nearly ideal minority carrier blocker. This effect is comparable to amorphous Si. However, the GaP layer can be contacted with metal fingers like crystalline Si, so no conductive oxide is necessary. Compared to the conventional PERC structure, the GaP/Si PERC cell requires a lower Si base doping density, which reduces the impact of the boron-oxygen complexes. Despite the lower base doping, fewer rear local contacts are necessary. This is so because the GaP emitter shows reduced recombination, leading to a higher minority electron density in the base and, in turn, to a higher base conductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Passive tailoring of laser-accelerated ion beam cut-off energy by using double foil assembly

A double foil assembly is shown to be effective in tailoring the maximum energy produced by a laser-accelerated proton beam. The measurements compare favorably with adiabatic expansion simulations, and particle-in-cell simulations. The arrangement proposed here offers for some applications a simple and passive way to utilize simultaneously highest irradiance lasers that have best laser-to-ion conversion efficiency while avoiding the production of undesired high-energy ions.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Silicon heterojunction solar cell with passivated hole selective MoO{sub x} contact

We explore substoichiometric molybdenum trioxide (MoO{sub x}, x < 3) as a dopant-free, hole-selective contact for silicon solar cells. Using an intrinsic hydrogenated amorphous silicon passivation layer between the oxide and the silicon absorber, we demonstrate a high open-circuit voltage of 711 mV and power conversion efficiency of 18.8%. Due to the wide band gap of MoO{sub x}, we observe a substantial gain in photocurrent of 1.9 mA/cm{sup 2} in the ultraviolet and visible part of the solar spectrum, when compared to a p-type amorphous silicon emitter of a traditional silicon heterojunction cell. Our results emphasize the strong potential for oxides as carrier selective heterojunction partners to inorganic semiconductors.

36 MATERIALS SCIENCE↗

Amorphous silicon passivated contacts for diffused junction silicon solar cells

Carrier recombination at the metal contacts is a major obstacle in the development of high-performance crystalline silicon homojunction solar cells. To address this issue, we insert thin intrinsic hydrogenated amorphous silicon [a-Si:H(i)] passivating films between the dopant-diffused silicon surface and aluminum contacts. We find that with increasing a-Si:H(i) interlayer thickness (from 0 to 16 nm) the recombination loss at metal-contacted phosphorus (n{sup +}) and boron (p{sup +}) diffused surfaces decreases by factors of ∼25 and ∼10, respectively. Conversely, the contact resistivity increases in both cases before saturating to still acceptable values of ∼ 50 mΩ cm{sup 2} for n{sup +} and ∼100 mΩ cm{sup 2} for p{sup +} surfaces. Carrier transport towards the contacts likely occurs by a combination of carrier tunneling and aluminum spiking through the a-Si:H(i) layer, as supported by scanning transmission electron microscopy–energy dispersive x-ray maps. We explain the superior contact selectivity obtained on n{sup +} surfaces by more favorable band offsets and capture cross section ratios of recombination centers at the c-Si/a-Si:H(i) interface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Atomic imaging and modeling of H{sub 2}O{sub 2}(g) surface passivation, functionalization, and atomic layer deposition nucleation on the Ge(100) surface

Passivation, functionalization, and atomic layer deposition nucleation via H{sub 2}O{sub 2}(g) and trimethylaluminum (TMA) dosing was studied on the clean Ge(100) surface at the atomic level using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). Chemical analysis of the surface was performed using x-ray photoelectron spectroscopy, while the bonding of the precursors to the substrate was modeled with density functional theory (DFT). At room temperature, a saturation dose of H{sub 2}O{sub 2}(g) produces a monolayer of a mixture of –OH or –O species bonded to the surface. STS confirms that H{sub 2}O{sub 2}(g) dosing eliminates half-filled dangling bonds on the clean Ge(100) surface. Saturation of the H{sub 2}O{sub 2}(g) dosed Ge(100) surface with TMA followed by a 200 °C anneal produces an ordered monolayer of thermally stable Ge–O–Al bonds. DFT models and STM simulations provide a consistent model of the bonding configuration of the H{sub 2}O{sub 2}(g) and TMA dosed surfaces. STS verifies the TMA/H{sub 2}O{sub 2}/Ge surface has an unpinned Fermi level with no states in the bandgap demonstrating the ability of a Ge–O–Al monolayer to serve as an ideal template for further high-k deposition.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Tuning the external optical feedback-sensitivity of a passively mode-locked quantum dot laser

The external optical feedback-sensitivity of a two-section, passively mode-locked quantum dot laser operating at elevated temperature is experimentally investigated as a function of absorber bias voltage. Results show that the reverse-bias voltage on the absorber has a direct impact on the damping rate of the free-running relaxation oscillations of the optical signal output, thereby enabling interactive external control over the feedback-response of the device, even under the nearly resonant cavity configuration. The combination of high temperature operation and tunable feedback-sensitivity is highly promising from a technological standpoint, in particular, for applications requiring monolithic integration of multi-component architectures on a single chip in order to accomplish, for instance, the dual-objectives of stable pulse quality and isolation from parasitic reflections.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗