Absorption edge modulator utilizing a p-n junction.
Optical absorption edge shift in reverse-biased p-n junction gallium arsenide semiconductor for light modulation
OPTICAL ABSORPTION↗
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Effect of mechanical strain on p-n junctions
Effect of mechanical strain on electrical characteristics of germanium and silicon p-n junction devices
ELECTRIC PROPERTY↗
Improved n on p silicon solar cells.
Fabrication processes and techniques for improving n on p silicon solar cells
P-N JUNCTION↗
Far ultraviolet response of silicon P-N JUNCTION photodiodes
Silicon P-N junction photodiode resistivity in vacuum ultraviolet
P-N JUNCTION↗
Photovoltaic Effect and Utilization of Photovoltaic Cells - Effect of Sub-threshold Electron Radiation on Surface Properties of Ge P-V Cells Second Semiannual Report, 1 Nov. 1965 - 31 May 1966
Effect of high energy electron irradiation on surface recombination properties of germanium p-n junction photovoltaic cells
GERMANIUM↗
Some Effects of Mechanical Stress on the Breakdown Voltage of P-n Junctions
Effects of mechanical stress on breakdown voltage of p-n junctions
STRESS-STRAIN-TIME RELATION↗
Equivalence of stress- and radiation-induced defects in degenerate p-n junctions.
Equivalence of stress and electron-irradiation induced defects in degenerate p-n germanium junctions as indicated in similar voltage-anneal characteristics
P-N JUNCTION↗
Thermal and electronic transport properties of p-type ZnSb.
Single crystal p-type zinc antimonide in thermoelectric, thermoconductivity and electronic transport measurements
THERMOELECTRIC MATERIAL↗
Effect of mechanical stress on p-n junction device characteristics. II - Generation- recombination current.
Theoretical model for effect of mechanical stress on generation-recombination currents in p-n junctions
SEMICONDUCTOR DEVICE↗
Electron paramagnetic resonance and electrical properties of the dominant paramagnetic defect in electron-irradiated p-type silicon.
Electron paramagnetic resonance and Hall effect measurements to determine properties of dominant paramagnetic defect in electron irradiated p-type silicon
ELECTRON BOMBARDMENT↗
Anomalous radiation effect in p-channel MOSFET's under electron irradiation.
Anomalous shift in gate threshold voltage of high transconductance p-channel MOSFETs during exposure to space-like radiation
SPACE RADIATION↗
Radiation induced peaking effect in open geometry-p-channel MOSFETs.
Electron radiation effect on open geometry p channel enhancement type MOSFET gate threshold voltage, noting peaking anomaly
Newman, P. A.↗
Microdetermination of urea in urine using p-dimethylaminobenzaldehyde /PDAB/
Adaptation of the p-dimethylaminobenzaldehyde method for determining urea concentration in urine is an improved micromechanical method. Accuracy and precision are satisfactory. This method avoids extra steps of deproteinizing or removing normal urinary chromogens.
Geiger, P. J.↗
Ionospheric research - The interaction of an obliquely incident p-polarized plane electromagnetic wave with a hot plasma half- space and plasma slab
Interaction of plane p-polarized electromagnetic wave obliquely incident on hot plasma half space and plasma slab
Bolduc, P. E.↗
On the concept of a p-q generalized inverse of a matrix.
P-Q norms generalized inverse concept of matrix derived from extension of Penrose best approximate solution of linear equations
Newman, T. G.↗
Interaction of an obliquely incident p- polarized plane electromagnetic wave with a hot plasma half-space
Obliquely incident p-polarized plane electromagnetic wave interaction with hot plasma half space, using linearized relativistic Vlasov equation and Laplace transform technique
Bolduc, P. E.↗
Magnetostriction and magnetoelastic quantum oscillations in P-type lead telluride
A detailed experimental and theoretical study of quantum oscillations in the magnetostriction and Young's modulus of p-PbTe is presented. The valance band of PbTe is approximated by a spheroidal, nonparabolic model in which the effects of strain on the valance band parameters are described by a deformation potential model. Using appropriate thermodynamic derivatives of the modified Lifshitz-Kosevich expression for the oscillatory parts of the electronic free energy, it is shown that both types of oscillations arise mainly from relative shifts of the valance band maxima due to shear strains, accompanied by intervalley charge transfer. Band parameters derived from the periods, phases, and spin splitting of the oscillations are in generally good agreement with values reported by other workers. A detailed comparison is made of the experimentally observed oscillation amplitudes with those predicted by theory, and satisfactory agreement is found. The ratio of the amplitudes of the two effects yields a value of the valance band deformation potential in good agreement with a value found from piezoresistance experiments by Burke.
Thompson, T. E.↗
Zr-92(d,p)Zr-93 and Zr-92(d,t)Zr-91
The structures of Zr-93 and Zr-91 were studied by the stripping reaction Zr-92(d,p)Zr-93 and the pick-up reaction Zr-92(d,t)Zr-91 using 13 MeV incident deuterons. The reaction product particles were detected by counter telescope. Typical spectra from the reactions were analyzed by a nonlinear least squares peak fitting program which included a background search. Spin and parity assignments to observed excited levels were made by comparing experimental angular distributions with distorted wave Born approximation calculations.
Baron, N.↗