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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,297 records · Page 72
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

New technologies as decision aids for the advancement of ecological risk assessment

Moore's law states that the number of transistors that can be placed on an integrated circuit doubles every two years (Moore, 1975). This has led to a steady increase in the processing power of computers over time, and technology is now enhancing and advancing software and scientific applications, which has enabled computationally intensive methods such as machine learning, data science, modeling, and simulation. The advancement of computers and data-driven algorithms is profoundly impacting people's lives. It is changing the way we work, the way we learn, and the way we interact with the world around us. Here, this editorial will discuss how scientists can benefit from the latest technology advancements and related tools by incorporating them into the ecological risk assessment (ERA) to study ecosystems as a way to create refined assessments and accelerate the turnaround times.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2018

Mechanically Assisted Self‐Healing of Ultrathin Gold Nanowires

Abstract As the critical feature sizes of integrated circuits approaching sub‐10 nm, ultrathin gold nanowires (diameter <10 nm) have emerged as one of the most promising candidates for next‐generation interconnects in nanoelectronics. Also due to their ultrasmall dimensions, however, the structures and morphologies of ultrathin gold nanowires are more prone to be damaged during practical services, for example, Rayleigh instability can significantly alter their morphologies upon Joule heating, hindering their applications as interconnects. Here, it is shown that upon mechanical perturbations, predamaged, nonuniform ultrathin gold nanowires can quickly recover into uniform diameters and restore their smooth surfaces, via a simple mechanically assisted self‐healing process. By examining the local self‐healing process through in situ high‐resolution transmission electron microscopy, the underlying mechanism is believed to be associated with surface atomic diffusion as evidenced by molecular dynamics simulations. In addition, mechanical manipulation can assist the atoms to overcome the diffusion barriers, as suggested by ab initio calculations, to activate more surface adatoms to diffuse and consequently speed up the self‐healing process. This result can provide a facile method to repair ultrathin metallic nanowires directly in functional devices, and quickly restore their microstructures and morphologies by simple global mechanical perturbations.

Wang, Binjun↗
DOE OSTI2018

Highly Stable Battery Pack via Insulated, Reinforced, Buckling-Enabled Interconnect Array

This work describes a flexible and stretchable battery pack configuration that exhibits highly stable performance under large deformation up to 100% biaxial stretching. Using stress-enduring printable inks and serpentine interconnects, the new screen-printing route offers an attractive solution for converting rigid battery units into a flexible, stretchable energy storage device. Coin-cell lithium ion batteries are thus assembled onto the island regions of a screen-printed, buckling-enabled, polymer-reinforced interconnect “island-bridge” array. Most of the strain on the new energy-storage device is thus accommodated by the stress-enduring serpentine structures, and the array is further reinforced by mechanically strong “backbone” layers. Battery pack arrays are assembled and tested under different deformation levels, demonstrating a highly stable performance (<2.5% change) under all test conditions. Additionally, a light emitting diode band powered by the battery pack is tested on-body, showing uninterrupted illumination regardless of any degrees of deformation. Moreover, battery-powered devices that are ultrastable under large deformation can be easily fabricated by incorporating different electronics parts such as sensors or integrated circuits on the same platform. Such ability to apply traditionally rigid, bulky lithium ion batteries onto flexible and stretchable printed surfaces holds considerable promise for diverse wearable applications.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Multi‐Objective Optimization for Rapid Identification of Novel Compound Metals for Interconnect Applications

Abstract Interconnect materials play the critical role of routing energy and information in integrated circuits. However, established bulk conductors, such as copper, perform poorly when scaled down beyond 10 nm, limiting the scalability of logic devices. Here, a multi‐objective search is developed, combined with first‐principles calculations, to rapidly screen over 15,000 materials and discover new interconnect candidates. This approach simultaneously optimizes the bulk electronic conductivity, surface scattering time, and chemical stability using physically motivated surrogate properties accessible from materials databases. Promising local interconnects are identified that have the potential to outperform ruthenium, the current state‐of‐the‐art post‐Cu material, and also semi‐global interconnects with potentially large skin depths at the GHz operation frequency. The approach is validated on one of the identified candidates, CoPt, using both ab initio and experimental transport studies, showcasing its potential to supplant Ru and Cu for future local interconnects.

Chemistry↗
DOE OSTI2019

Targeted modification of hardware trojans

The use of untrusted design tools, components, and designers, coupled with untrusted device fabrication, introduces the possibility of malicious modifications being made to integrated circuits (ICs) during their design and fabrication. These modifications are known as hardware trojans. The widespread use of commercially purchased 3rd party intellectual property (3PIP) and commercial design tools extends even into trusted design flows. Unfortunately, due to the theoretical result that there is no program that can decide whether any other program will eventually halt, we know that the properties of a program, or circuit, cannot be known in advance of running it. While we can design a circuit to meet some functional specification and generate a simulation or test suite to obtain at least probabilistic confidence that the circuit implements the intended functionality, we cannot test a circuit for unintended functionality due to the combinatorially large state space. To address these concerns, we have developed a design-time method for automatically and systematically modifying portions of a design that exhibit characteristics of hardware trojans. After each modification, the functionality of the design is verified against a comprehensive simulation suite to ensure that the intended circuit functionality has not been changed. This approach can be applied to any digital circuit and does not rely on secret keys or obfuscation.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2022

Methods for estimating X-ray machine output through measurement and simulation

We report ball grid arrays are increasingly being applied in the electronics industry and may require X-ray inspection to ensure the integrity and correct placement of solder pins. However, as the architecture of integrated circuits continues to narrow while simultaneously growing more complex, the risk of electronic failure due to radiation damage increases. While medical X-ray devices have been held to high standards and are repeatedly shown to be well characterized, devices used for electronic inspection are often lacking detailed characterization. This study presents unique methods to solve for important properties in X-ray inspection devices such as source to object distance and energy spectrum. This information can then be applied to Monte Carlo models to achieve better overall dose estimates to electronics, which will lead to superior manufactured products. Since X-ray devices can vary greatly in source characteristics, this work investigates spectral measurement and Monte Carlo representation of three X-ray devices. For a Philips SRO 33 100 medical diagnostic device, the spectral output followed expected trends given by the prediction software SpekCalc and Spektr. For the Dage XD7500NT, direct measurement showed a spectral artifact that through the use of Gafchromic films, was shown to be a contributing effect in the dose output. For the Rad Source RS1800, a high powered irradiation device, direct spectral measurement was not achieved. However, a Monte Carlo model using an assumed spectra was found to match ion chamber measurements to a high degree.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

An MPMD approach coupling electromagnetic continuum mechanics approximations in ALEGRA

In this work, two complementary approximations for describing aspects of continuum electromagnetics in moving media are discussed: electroquasistatic and magnetoquasistatic. Each has been implemented in the finite element shock code ALEGRA for modeling dynamic electromechanical phenomena on typical engineering time scales, with fully integrated circuit coupling. The approximations can be obtained by consistent asymptotic balancing of Maxwell’s equations relative to timescales associated with magnetic diffusion, charge relaxation, and electromagnetic wave propagation. In ALEGRA, the electroquasistatic approximation is used for ferroelectric (FE) modeling, while the magnetoquasistatic approximation is used for magnetohydrodynamic (MHD) modeling. In this paper we introduce for the first time a detailed derivation of a useful quasi-steady “low-R m ” variant of the MHD approximation applicable for cases, such as with detonators, where the thermodynamic pressure arising from Joule heating dominates over magnetic forces. An additional purpose of this paper is to present a coupling mode using Multiple Program-Multiple Data (MPMD) message passing communication that allows the user to run 3D FE problems together with 2D and/or 3D MHD problems with the respective simulation domains coupled through a common circuit equation. The MPMD coupling capability is used here to model the dynamic coupling of a notional ferroelectric generator with an RP-87 exploding bridgewire detonator. The simulated bridgewire heats up and bursts under current generated by simulated depoling of the ferroelectric generator, as a demonstration of the MPMD capability.

42 ENGINEERING↗
DOE OSTI2018

On the formation mechanism of solid-solution Cu-to-Cu joints in the Cu/Ni/Ga/Ni/Cu system

Highlights: • The mechanism of Cu/(Ni,Cu,Ga)/Cu solid-solution joint formation is elaborated. • Ga is the dominant diffusion species in the Cu/Ni/Ga/Ni/Cu bonding system. • Loose and columnar Ni{sub 3}Ga{sub 7} layer is formed by the (001)-textured Ni/Ga reactions. • Cu significantly accelerates the growth of Ni{sub 3}Ga{sub 7} layer by enhancing Ga diffusion. • Supersaturated Cu in Ni{sub 2}Ga{sub 3} phase promotes the formation of the final fcc phase. - Abstract: Copper (Cu)-to-Cu interconnection is crucial in electronic packaging for applications ranging from three-dimensional integrated circuits to die-attachment in wide band-gap devices. Solid-solution phases are innate with better ductility and electrical and thermal conductivity over intermetallic compounds, which are brittle, electrical resistant, and unstable; yet are commonly seen in electronic joints. The desired solid-solution Cu-to-Cu joints have recently been demonstrated using transient-liquid-phase bonding with gallium (Ga) as the filler material to bond Cu substrates with electroplated nickel (Ni) as under-bump-metallurgy. The Cu/Ni/Ga/Ni/Cu couples can fully transform into the Cu/face-centered cubic (fcc)-(Ni,Cu,Ga)/Cu solid-solution joints. However, why and how the solid-solution joints were formed remains unclear. Here we proposed the formation mechanism of the fcc-(Ni,Cu,Ga) solid-solution joints based on five sets of Cu-Ni-Ga couples, namely the Ni/Ga, Ni/Cu/Ga, Ni/Ni/Ga, (Cu,Ni)/Ga, and Cu/Ni/Ni{sub 3}Ga{sub 7}/Ni{sub 3}Ga{sub 7}/Ni/Cu reactions. The roles of each element in the Cu-Ga-Ni interactions as well as the reaction progressions are elaborated.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Inspired superhydrophobic surfaces by a double-metal-assisted chemical etching route

Graphical abstract: A double-metal-assisted chemical etching method is employed to fabricate superhydrophobic surfaces, showing a good superhydrophobicity with the contact angle of about 170°, and the sliding angle of about 0°. Meanwhile, the potential formation mechanism about it is also presented. Highlights: ► A double-metal-assisted chemical etching method is employed to fabricate superhydrophobic surfaces. ► The obtained surfaces show good superhydrophobicity with a high contact angle and low sliding angle. ► The color of the etched substrate dark brown or black and it is so-called black silicon. -- Abstract: Silicon substrates treated by metal-assisted chemical etching have been studied for many years since they could be employed in a variety of electronic and optical devices such as integrated circuits, photovoltaics, sensors and detectors. However, to the best of our knowledge, the chemical etching treatment on the same silicon substrate with the assistance of two or more kinds of metals has not been reported. In this paper, we mainly focus on the etching time and finally obtain a series of superhydrophobic silicon surfaces with novel etching structures through two successive etching processes of Cu-assisted and Ag-assisted chemical etching. It is shown that large-scale homogeneous but locally irregular wire-like structures are obtained, and the superhydrophobic surfaces with low hysteresis are prepared after the modifications with low surface energy materials. It is worth noting that the final silicon substrates not only possess high static contact angle and low hysteresis angle, but also show a black color, indicating that the superhydrophobic silicon substrate has an extremely low reflectance in a certain range of wavelengths. In our future work, we will go a step further to discuss the effect of temperature, the size of Cu nanoparticles and solution concentration on the final topography and superhydrophobicity.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Semiconductor-compatible topological digital alloys

Recently, GeSn alloys have attracted much interest for direct-gap infrared photonics and as potential topological materials which are compatible with the semiconductor industry. However, for photonics, the high-Sn content required leads to low detectivity, associated with poor material quality, and the (>35 %) Sn required for topological properties have been out of reach experimentally. Here, we demonstrate that by patterning the Sn distribution within Ge, the electronic properties have a far greater tunability than is possible with the random alloy. For the GeSn δ-digital alloy (DA) formed by confining Sn atoms in atomic layer(s) along the [111] direction of Ge, we show that ∼ 10 % Sn can lead to a triple-point semimetal. These findings are understood in terms of Sn ordering causing spatial separation of Sn and Ge band edges, leading to band inversion. This mechanism can also lead to a weak topological insulator, Weyl semimetal, and enables tunable direct bandgaps down to 2 meV, covering the entire infrared range. This DA induced topological properties are also identified in compound semiconductors, such as InAs 1-x Sb x , showing the general applicability of the DA design for realizing topological properties on conventional semiconductor platforms. Furthermore, our findings not only point to a new class of currently unexplored topological systems accessible by epitaxy, but also establish the promise of low-Sn GeSn DAs for application as infrared laser diodes and photodetectors in Si photonic integrated circuits and infrared image sensors.

3D topological semimetal↗
DOE OSTI2025

Optimization of edge bead removal (EBR) process to enhance defect reduction in optical lithography

Defect reduction remains a critical objective in the integrated circuit manufacturing process, particularly within the highly re-entrant lithography modules where minimizing defects is crucial. Defects at the wafer edge can contaminate lithography modules and downstream processing equipment, leading to redistribution onto the wafer surface and adversely affecting overall device yield. A persistent challenge in the resist coating process is the formation of resist edge beads, driven by the strong Van der Waals attraction of excess photoresist (PR) to itself and the underlying substrate. The edge bead removal (EBR) process is a standard cleaning step designed to eliminate these edge beads and prevent potential contamination. Here, in this study, we identify the sources of EBR induced defects and additional EBR process encroachment toward edge patterning during the EBR cleaning process. This study provides a comprehensive study aimed at optimizing the EBR cleaning process to effectively eliminate EBR-induced defects, thereby enhancing overall device yield. Specifically, we identify three primary defects induced by the EBR cleaning process: rainbow-type, finger-shaped, and teardrop-type defects. Our experimental study reveals that in addition to EBR rinse time, PR cast time is crucial parameters contributing to the formation of these defects. By properly optimizing the PR cast time and EBR rinse time, we were able to remove nearly 100 % of dense clusters of defects that were easily visible even at low magnification optical microscopy throughout the wafer edge. We observed that shorter PR casting times shows edge defects caused by inefficient EBR process because of insufficient time for PR to fully settle causing superfluous PR to continue flowing toward wafer edge during EBR clearing step, leading to partial removal of PR at the wafer edge and the formation of rainbow defects. Proper optimization of both PR casting time and EBR chemistries dispense time is essential to resolve these defects, ensuring efficient EBR cleaning process and improved overall device yield.

42 ENGINEERING↗
DOE OSTI2021

Degradation mechanisms of 1.3 μm C-doped quantum dot lasers grown on native substrate

Here, the aim of this paper is to analyse the degradation modes of 1.3 μm InAs quantum dot laser diodes (QD LDs) grown by using carbon as a p-type dopant, as an alternative to beryllium. The devices were stressed at high current densities, to favor the onset of excited-state (ES) emission, and to study the related degradation phenomena. The study of QD LDs is of fundamental importance for the photonic integrated circuits (PICs). The investigation is based on two types of stress tests: 1) a current step stress and 2) a constant current stress. With these experiments we demonstrate that a) the current is a determining factor for the onset of the ES during the operation of such devices. b) the onset of ES is responsible for a rapid quenching of the ground state (GS) emission. c) stress induces a significant increase in the threshold current of the devices, that is ascribed to the lowering of the injection efficiency, which in turn can be explained by the easier escape of carriers from quantum dots (QDs) from ES energy levels. d) the contribution of defects on the optical and electrical degradation is also discussed.

42 ENGINEERING↗
DOE OSTI2015

Radiation testing campaign results for understanding the suitability of FPGAs in detector electronics

SRAM based Field Programmable Gate Arrays (FPGAs) have been rarely used in High Energy Physics (HEP) due to their sensitivity to radiation. The last generation of commercial FPGAs based on 28 nm feature size and on Silicon On Insulator (SOI) technologies are more tolerant to radiation to the level that their use in front-end electronics is now feasible. FPGAs provide re-programmability, high-speed computation and fast data transmission through the embedded serial transceivers. They could replace custom application specific integrated circuits in front end electronics in locations with moderate radiation field. Finally, the use of a FPGA in HEP experiments is only limited by our ability to mitigate single event effects induced by the high energy hadrons present in the radiation field.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

A low-noise CMOS pixel direct charge sensor, Topmetal-II -

In this paper, we report the design and characterization of a CMOS pixel direct charge sensor, Topmetal-II-, fabricated in a standard 0.35 μm CMOS Integrated Circuit process. The sensor utilizes exposed metal patches on top of each pixel to directly collect charge. Each pixel contains a low-noise charge-sensitive preamplifier to establish the analog signal and a discriminator with tunable threshold to generate hits. The analog signal from each pixel is accessible through time-shared multiplexing over the entire array. Hits are read out digitally through a column-based priority logic structure. Tests show that the sensor achieved a <15e - analog noise and a 200e - minimum threshold for digital readout per pixel. The sensor is capable of detecting both electrons and ions drifting in gas. Lastly, these characteristics enable its use as the charge readout device in future Time Projection Chambers without gaseous gain mechanism, which has unique advantages in low background and low rate-density experiments.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2018

Characterisation and testing of CHEC-M—A camera prototype for the small-sized telescopes of the Cherenkov telescope array

The Compact High Energy Camera (CHEC) is a camera design for the Small-Sized Telescopes (SSTs; 4 m diameter mirror) of the Cherenkov Telescope Array (CTA). The SSTs are focused on very-high-energy γ-ray detection via atmospheric Cherenkov light detection over a very large area. This implies many individual units and hence cost-effective implementation, as well as shower detection at large impact distance, and hence large field of view (FoV), and efficient image capture in the presence of large time gradients in the shower image detected by the camera. CHEC relies on dual-mirror optics to reduce the plate-scale and make use of 6 x 6 mm 2 pixels, leading to a low-cost (~150 k€), compact (0.5 m x 0.5 m), and light (~45 kg) camera with 2048 pixels providing a camera FoV of ~9 degrees. The CHEC electronics are based on custom TARGET (TeV array readout with GSa/s sampling and event trigger) application-specific integrated circuits (ASICs) and field programmable gate arrays (FPGAs) sampling incoming signals at a gigasample per second, with flexible camera-level triggering within a single backplane FPGA. CHEC is designed to observe in the γ-ray energy range of 1–300 TeV, and at impact distances up to 500 m. To accommodate this and provide full flexibility for later data analysis, full waveforms with 96 samples for all 2048 pixels can be read out at rates up to ~900 Hz. The first prototype, CHEC-M, based on multi-anode photomultipliers (MAPMs) as photosensors, was commissioned and characterised in the laboratory and during two measurement campaigns on a telescope structure at the Paris Observatory in Meudon. Here in this paper, the results and conclusions from the laboratory and on-site testing of CHEC-M are presented. They have provided essential input on the system design and on operational and data analysis procedures for a camera of this type. In conclusion, a second full-camera prototype based on Silicon photomultipliers (SiPMs), addressing the drawbacks of CHEC-M identified during the first prototype phase, has already been built and is currently being commissioned and tested in the laboratory.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2019

Front-end electronic readout system for the Belle II imaging Time-Of-Propagation detector

The Time-Of-Propagation detector is a Cherenkov particle identification detector based on quartz radiator bars for the Belle II experiment at the SuperKEKB ee collider. The purpose of the detector is to identify the type of charged hadrons produced in ee collisions, and requires a single photon timing resolution below 100 picoseconds. A novel front-end electronic system was designed, built, and integrated to acquire data from the 8192 microchannel plate photomultiplier tube channels in the detector. Waveform sampling of these analog signals is done by switched-capacitor array application-specific integrated circuits. The processes of triggering, digitization of windows of interest, readout, and data transfer to the Belle II data acquisition system are managed by Xilinx Zynq-7000 programmable system on a chip devices.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2023

Ultrafast radiographic imaging and tracking: An overview of instruments, methods, data, and applications

Ultrafast radiographic imaging and tracking (U-RadIT) use state-of-the-art ionizing particle and light sources to experimentally study sub-nanosecond transients or dynamic processes in physics, chemistry, biology, geology, materials science and other fields. These processes are fundamental to modern technologies and applications, such as nuclear fusion energy, advanced manufacturing, communication, and green transportation, which often involve one mole or more atoms and elementary particles, and thus are challenging to compute by using the first principles of quantum physics or other forward models. One of the central problems in U-RadIT is to optimize information yield through, e.g. high-luminosity X-ray and particle sources, efficient imaging and tracking detectors, novel methods to collect data, and large-bandwidth online and offline data processing, regulated by the underlying physics, statistics, and computing power. We review and highlight recent progress in: (a.) Detectors such as high-speed complementary metal-oxide semiconductor (CMOS) cameras, hybrid pixelated array detectors integrated with Timepix4 and other application-specific integrated circuits (ASICs), and digital photon detectors; (b.) U-RadIT modalities such as dynamic phase contrast imaging, dynamic diffractive imaging, and four-dimensional (4D) particle tracking; (c.) U-RadIT data and algorithms such as neural networks and machine learning, and (d.) Applications in ultrafast dynamic material science using XFELs, synchrotrons and laser-driven sources. Hardware-centric approaches to U-RadIT optimization are constrained by detector material properties, low signal-to-noise ratio, high cost and long development cycles of critical hardware components such as ASICs. Interpretation of experimental data, including comparisons with forward models, is frequently hindered by sparse measurements, model and measurement uncertainties, and noise. Alternatively, U-RadIT make increasing use of data science and machine learning algorithms, including experimental implementations of compressed sensing. Machine learning and artificial intelligence approaches, refined by physics and materials information, may also contribute significantly to data interpretation, uncertainty quantification and U-RadIT optimization.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗