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At least 1,297 records · Page 72

Local formation of nitrogen-vacancy centers in diamond by swift heavy ions

We exposed nitrogen-implanted diamonds to beams of swift heavy ions (∼1 GeV, ∼4 MeV/u) and find that these irradiations lead directly to the formation of nitrogen vacancy (NV) centers, without thermal annealing. We compare the photoluminescence intensities of swift heavy ion activated NV{sup −} centers to those formed by irradiation with low-energy electrons and by thermal annealing. NV{sup −} yields from irradiations with swift heavy ions are 0.1 of yields from low energy electrons and 0.02 of yields from thermal annealing. We discuss possible mechanisms of NV center formation by swift heavy ions such as electronic excitations and thermal spikes. While forming NV centers with low efficiency, swift heavy ions could enable the formation of three dimensional NV{sup −} assemblies over relatively large distances of tens of micrometers. Further, our results show that NV center formation is a local probe of (partial) lattice damage relaxation induced by electronic excitations from swift heavy ions in diamond.

36 MATERIALS SCIENCE↗

New method for level-lifetime measurements with thick scintillators

Level lifetimes provide key insight into the structure of atomic nuclei and serve as stringent tests of theoretical descriptions. Though several methods for determining level lifetimes exist for both reaction measurements and decay studies, here the focus is on techniques involving the direct measurement of time differences between population and subsequent depopulation of excited states. The techniques presented herein are broadly applicable across multiple timing ranges, but the approach is specifically described for the βγ timing method. A multi-step, amplitude-dependent time walk correction was employed to address the data analysis complications that arise from using thick scintillators for electron detection. Further, additional corrections for the depth of the interaction must also be performed when the parent isotope has been implanted into the detector. Techniques are presented for performing these time walk and depth of interaction corrections. Subsequently, a new Monte Carlo method utilizing measured detector responses obtained from the data, coupled with chi-square minimization, is presented for extracting excited state lifetimes ≳ 100 picoseconds. The framework of this Monte Carlo method is developed for the decay of a state in 68 Zn with a known 1.6 ps half life, which is considered prompt given the detection sensitivity of the technique, and then benchmarked using two other excited states in neutron-rich Ni isotopes with 120(34) ps and 1.05(3) ns half lives. Using this new method which takes into account the thick scintillator used, these same half lives were measured to be 135(10) ps and 1.04(24) ns, respectively. The overall good agreement demonstrates the validity of the technique.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Light absorption and electrical transport in Si:O alloys for photovoltaics

Thin films (100-500 nm) of the Si:O alloy have been systematically characterized in the optical absorption and electrical transport behavior, by varying the Si content from 43 up to 100 at. %. Magnetron sputtering or plasma enhanced chemical vapor deposition have been used for the Si:O alloy deposition, followed by annealing up to 1250 deg. C. Boron implantation (30 keV, 3-30x10{sup 14} B/cm{sup 2}) on selected samples was performed to vary the electrical sheet resistance measured by the four-point collinear probe method. Transmittance and reflectance spectra have been extracted and combined to estimate the absorption spectra and the optical band gap, by means of the Tauc analysis. Raman spectroscopy was also employed to follow the amorphous-crystalline (a-c) transition of the Si domains contained in the Si:O films. The optical absorption and the electrical transport of Si:O films can be continuously and independently modulated by acting on different parameters. The light absorption increases (by one decade) with the Si content in the 43-100 at. % range, determining an optical band gap which can be continuously modulated into the 2.6-1.6 eV range, respectively. The a-c phase transition in Si:O films, causing a significant reduction in the absorption coefficient, occurs at increasing temperatures (from 600 to 1100 deg. C) as the Si content decreases. The electrical resistivity of Si:O films can be varied among five decades, being essentially dominated by the number of Si grains and by the doping. Si:O alloys with Si content in the 60-90 at. % range (named oxygen rich silicon films), are proved to join an appealing optical gap with a viable conductivity, being a good candidate for increasing the conversion efficiency of thin-film photovoltaic cell.

36 MATERIALS SCIENCE↗

Thermodynamics of an austenitic stainless steel (AISI-348) under in situ TEM heavy ion irradiation

The stability of the face-centred cubic austenite (γ-Fe) phase in a commercial stainless steel (AISI348) was investigated through in situ transmission electron microscopy (TEM) with heavy ion irradiation at 1073 K up to a fluence of 1.3×10 17 ions·cm -2 (corresponding to a dose of 46 dpa). The γ-Fe phase was observed to decompose at a fluence of around 7.8×10 15 ions·cm -2 (3 dpa) when a new phase nucleated and grew upon increasing irradiation dose. Scanning transmission electron microscopy (STEM) with energy dispersive X-ray (EDX) spectroscopy and multivariate statistical analysis (MVSA) were used to characterise the irradiated specimens. The combination of such experimental techniques with calculated equilibrium phase diagrams using the CALPHAD method led to the conclusion that the new phase formed upon irradiation is the body-centred cubic Cr-rich α 0 phase. At the nanoscale, precipitation of M 23 C 6 (τ-carbide) was also observed. The results indicate that ion irradiation can assist the austenitic stainless steel to reach a non-equilibrium state similar to a calculated equilibrium state observed at lower temperatures in which, under conventional conditions, is suppressed due to kinetic restrictions.

36 MATERIALS SCIENCE↗

Order and disorder in edge-supported pure amorphous Si and pure amorphous Si on Si(001).

We report results from an investigation into hidden anisotropy in pure fully-dense amorphous silicon. For amorphous silicon in intimate contact with a crystalline Si(001) substrate, one can reasonably expect that the interface with the substrate may impose anisotropy in the form of distorted ordering within the film. Indeed, we found four-fold periodic intensity variations, with bimodal intensity centered along the substrate c-Si < 110> directions, in the X-ray scattering from a-Si on Si(001). These well-defined intensity variations disappeared entirely in X-ray scattering from edge-supported a-Si films, where there was no detectable anisotropy.

36 MATERIALS SCIENCE↗

Impact of composition modification induced by ion beam Coulomb-drag effects on the nanoindentation hardness of HT9

Accelerator-based ion irradiation is commonly used to simulate neutron damage, in lieu of neutron irradiation due to limited availability of fast flux facilities and little to no activation of the samples. Neutron atypical effects, however, must be recognized and their impact minimized in order to achieve the most accurate microstructural evolution under ion bombardment. Mechanical property changes, which arise from the synergy of numerous radiation-induced changes, are especially susceptible to these neutron atypical effects. Of these effects, a recently studied neutron atypical effect, arising from Coulomb-drag of vacuum contaminants and subsequent compositional alteration, was shown to substantially suppress swelling. Through the use of an ion beam filtering system, the resulting void swelling was shown to closely match neutron irradiation data. In this study, the impact of compositional modification via Coulomb-drag on the mechanical property changes is examined through the use of nanoindentation on a ferritic/martensitic alloy, HT9, irradiated with and without the use of the ion beam filtering system.

36 MATERIALS SCIENCE↗

Improved diamond surfaces following lift-off and plasma treatments as observed by x-ray absorption spectroscopy

We have investigated the nature of the residual damage in diamond crystals following the ion implantation/graphitization ''lift-off'' process, using near-edge x-ray absorption fine structure spectroscopy and transmission electron microscopy. A defective but crystalline interface is found, which displays dense pre-edge unoccupied states and an almost complete loss of the core-level C 1s exciton signature. This residual crystalline damage is resistant to standard chemical etching, however a hydrogen plasma treatment is found to completely recover a pristine diamond surface. Analysis and removal of residual ion-induced damage is considered crucial to the performance of many diamond device architectures.

36 MATERIALS SCIENCE↗

Dopant characterization in self-regulatory plasma doped fin field-effect transistors by atom probe tomography

Fin field-effect transistors are promising next-generation electronic devices, and the identification of dopant positions is important for their accurate characterization. We report atom probe tomography (APT) of silicon fin structures prepared by a recently developed self-regulatory plasma doping (SRPD) technique. Trenches between fin-arrays were filled using a low-energy focused ion beam to directly deposit silicon, which allowed the analysis of dopant distribution by APT near the surface of an actual fin transistor exposed to air. We directly demonstrate that SRPD can achieve a boron concentration above 1 x 10{sup 20} atoms/cm{sup 3} at the fin sidewall.

36 MATERIALS SCIENCE↗

Tailoring interfacial exchange coupling with low-energy ion beam bombardment: Tuning the interface roughness

By ascertaining NiO surface roughness in a Ni{sub 80}Fe{sub 20}/NiO film system, we were able to correlate the effects of altered interface roughness from low-energy ion-beam bombardment of the NiO layer and the different thermal instabilities in the NiO nanocrystallites. From experiment and by modelling the temperature dependence of the exchange bias field and coercivity, we have found that reducing the interface roughness and changing the interface texture from an irregular to striped conformation enhanced the exchange coupling strength. Our results were in good agreement with recent simulations using the domain state model that incorporated interface mixing.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Formation mechanisms of embedded nanocrystals in SiN{sub x}

We have investigated the formation of embedded nanocrystals (NCs) in SiN{sub x} using Ga{sup +} focused-ion beam irradiation of SiN{sub x} membranes, followed by rapid thermal annealing (RTA). During irradiation, redeposition is enhanced by developing side walls, leading to enhanced near-surface [Ga] and [Si]. Subsequent RTA leads to the formation of Si and Ga NCs embedded in SiN{sub x}. When the ratio of the irradiated area to the sidewall area is increased, redeposition is limited, and SiN{sub x} and GaN NCs are also apparent. We discuss the effect of limited redeposition on NC formation and the catalytic effect of Ga on Si NC nucleation and growth.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Enhancement of the magnetic interfacial exchange energy at a specific interface in NiFe/CoO/Co trilayer thin films via ion-beam modification

A series of ferromagnetic Ni{sub 80}Fe{sub 20}(55 nm)/antiferromagnetic CoO (25 to 200 nm)/ferromagnetic Co (55 nm)/SiO{sub 2}(substrate) trilayer thin films were fabricated by ion-beam assisted deposition in order to understand the role of ion beam modification on the interfacial and interlayer coupling. The microstructural study using transmission electron microscopy, X-ray reflectometry, and polarised neutron reflectometry showed that ion-beam modification during the deposition process led to an oxygen-rich Co/CoO nanocomposite interface region at the bottom layer. This interface caused a high exchange bias field for the ferromagnetic cobalt. However, the exchange bias for top permalloy ferromagnet remained low, in line with expectations from the literature for the typical interfacial energy. This suggest that the ion-beam enhancement of the magnetic exchange bias is localized to the Co/CoO interface where local microstructural effects provide the dominant mechanism.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Effects of ion and nanosecond-pulsed laser co-irradiation on the surface nanostructure of Au thin films on SiO{sub 2} glass substrates

Ion irradiation and short-pulsed laser irradiation can be used to form nanostructures on the surfaces of substrates. This work investigates the synergistic effects of ion and nanosecond-pulsed laser co-irradiation on surface nanostructuring of Au thin films deposited under vacuum on SiO{sub 2} glass substrates. Gold nanoparticles are randomly formed on the surface of the substrate after nanosecond-pulsed laser irradiation under vacuum at a wavelength of 532 nm with a repetition rate of 10 Hz and laser energy density of 0.124 kJ/m{sup 2}. Gold nanoparticles are also randomly formed on the substrate after 100-keV Ar{sup +} ion irradiation at doses of up to 3.8 × 10{sup 15} ions/cm{sup 2}, and nearly all of these nanoparticles are fully embedded in the substrate. With increasing ion irradiation dose (number of incident laser pulses), the mean diameter of the Au nanoparticles decreases (increases). However, Au nanoparticles are only formed in a periodic surface arrangement after co-irradiation with 6000 laser pulses and 3.8 × 10{sup 15} ions/cm{sup 2}. The periodic distance is ∼540 nm, which is close to the wavelength of the nanosecond-pulsed laser, and the mean diameter of the Au nanoparticles remains at ∼20 nm with a relatively narrow distribution. The photoabsorption peaks of the ion- or nanosecond-pulsed laser-irradiated samples clearly correspond to the mean diameter of Au nanoparticles. Conversely, the photoabsorption peaks for the co-irradiated samples do not depend on the mean nanoparticle diameter. This lack of dependence is likely caused by the periodic nanostructure formed on the surface by the synergistic effects of co-irradiation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Negative differential transconductance in silicon quantum well metal-oxide-semiconductor field effect/bipolar hybrid transistors

Introducing explicit quantum transport into Si transistors in a manner amenable to industrial fabrication has proven challenging. Hybrid field-effect/bipolar Si transistors fabricated on an industrial 45 nm process line are shown to demonstrate explicit quantum transport signatures. These transistors incorporate a lateral ion implantation-defined quantum well (QW) whose potential depth is controlled by a gate voltage (V{sub G}). Quantum transport in the form of negative differential transconductance (NDTC) is observed to temperatures >200 K. The NDTC is tied to a non-monotonic dependence of bipolar current gain on V{sub G} that reduces drain-source current through the QW. These devices establish the feasibility of exploiting quantum transport to transform the performance horizons of Si devices fabricated in an industrially scalable manner.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Freestanding single-crystalline magnetic structures fabricated by ion bombardment

Starting from an ultrathin Fe film grown epitaxially on top of a GaAs(001) substrate, we show that freestanding structures can be created by ion-beam treatment. These structures are single-crystalline blisters and only a few nanometers thick. Anisotropic stress in the rim of a blister induces magnetic domain states magnetized in the direction normal to the blister edge. Experimental evidence is provided that the lateral size can be confined by starting from a nanostructured template.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Néel walls between tailored parallel-stripe domains in IrMn/CoFe exchange bias layers

Tailored parallel-stripe magnetic domains with antiparallel magnetizations in adjacent domains along the long stripe axis have been fabricated in an IrMn/CoFe Exchange Bias thin film system by 10 keV He{sup +}-ion bombardment induced magnetic patterning. Domain walls between these domains are of Néel type and asymmetric as they separate domains of different anisotropies. X-ray magnetic circular dichroism asymmetry images were obtained by x-ray photoelectron emission microscopy at the Co/Fe L{sub 3} edges at the synchrotron radiation source BESSY II. They revealed Néel-wall tail widths of 1 μm in agreement with the results of a model that was modified in order to describe such walls. Similarly obtained domain core widths show a discrepancy to values estimated from the model, but could be explained by experimental broadening. The rotation senses in adjacent walls were determined, yielding unwinding domain walls with non-interacting walls in this layer system.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Optical studies of ion-beam synthesized metal alloy nanoparticles

Au{sub x}Ag{sub 1-x} alloy nanoparticles with tunable surface plasmon resonance (SPR) have been synthesized on a silica glass substrate. A small Au foil on an Ag foil is irradiated as target substrates such that ion beam falls on both Ag foil and Au foils. Silica slides are kept at an angle ∼45° with respect to the metallic foils. While irradiating the metallic foils with 100 keV Ar{sup +} ions, sputtered Au and Ag atoms get deposited on the silica-glass. In this configuration the foils have been irradiated by Ar{sup +} ions to various fluences at room temperature and the sputtered species are collected on silica slides. Formation of Au{sub x}Ag{sub 1-x} nanoparticles has been confirmed from the optical absorption measurements. With respect to the exposure area of Au and Ag foils to the ion beam, the SPR peak position varies from 450 to 500 nm. Green photoluminescence has been observed from these alloy metal nanoparticles.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

In operandi observation of dynamic annealing: A case study of boron in germanium nanowire devices

We report on the implantation of boron in individual, electrically contacted germanium nanowires with varying diameter and present a technique that monitors the electrical properties of a single device during implantation of ions. This method gives improved access to study the dynamic annealing ability of the nanowire at room temperature promoted by its quasi-one-dimensional confinement. Based on electrical data, we find that the dopant activation efficiency is nontrivially diameter dependent. As the diameter decreases, a transition from a pronounced dynamic-annealing to a radiation-damage dominated regime is observed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Void-interface wetting to crossing transition owing to bubble to void transformation

Understanding cavity-interface interaction is crucial in designing high-strength, radiation-tolerant nanocomposites. In this work, bubbles near the Cu–Nb interface in Nb could be absorbed by Cu voids wetting the interface due to the high system energy difference produced by the huge pressure difference between the bubbles and voids and high mobility of bubbles, and no bubble-denuded zone forms owing to fast Brownian motion of bubbles, which keeps bubbles distributed homogeneously. However, owing to the low system energy difference generated by the low internal pressure difference and low mobility, voids near the Cu–Nb interface in Nb would simply coalesce with Cu voids wetting the interface, leading to the void-interface wetting to crossing transition and the formation of void-denuded zones due to the negligible migration of internal Nb voids.

36 MATERIALS SCIENCE↗