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Results for “silicon processing”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,279 records · Page 71
All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

The effects of titanium impurities in N/+//P silicon solar cells

Microscopic and electrical measurements were performed to explain the degradation mechanisms associated with the presence of titanium impurities in silicon. The measurements included X-ray topography, transmission electron microscopy, and deep level transient spectroscopy, before and after processing. The results indicated the presence of TiO2 precipitates, the density of which increased after phosphorus diffusion. A majority carrier trapping level was observed in the wafers before processing. It was concluded that 10% of the Ti in the N(+)/P silicon solar cells formed electrically active centers which caused degradation of the cell junction. 14% of the remaining Ti precipitated out as TiO2, forming electrically active defects, which also caused junction degradation.

Salama, A. M.↗
NASA NTRS1994

A 500 megabyte/second disk array

Applications at the Army High Performance Computing Research Center's (AHPCRC) Graphic and Visualization Laboratory (GVL) at the University of Minnesota require a tremendous amount of I/O bandwidth and this appetite for data is growing. Silicon Graphics workstations are used to perform the post-processing, visualization, and animation of multi-terabyte size datasets produced by scientific simulations performed of AHPCRC supercomputers. The M.A.X. (Maximum Achievable Xfer) was designed to find the maximum achievable I/O performance of the Silicon Graphics CHALLENGE/Onyx-class machines that run these applications. Running a fully configured Onyx machine with 12-150MHz R4400 processors, 512MB of 8-way interleaved memory, 31 fast/wide SCSI-2 channel each with a Ciprico disk array controller we were able to achieve a maximum sustained transfer rate of 509.8 megabytes per second. However, after analyzing the results it became clear that the true maximum transfer rate is somewhat beyond this figure and we will need to do further testing with more disk array controllers in order to find the true maximum.

Ruwart, Thomas M.↗
NASA NTRS1986

Processes and process development in Japan

The commercialization of solar power generation necessitates the development of low cost manufacturing method of silicon suitable for solar cells. The manufacturing methods of semiconductor grade silicon (SEG-Si) and the development of solar grade silicon (SOG-Si) in foreign countries was investigated. It was concluded that the most efficient method of developing such materials was the hydrogen reduction process of trichlorosilane (TCS), using a fluidized bed reactor. The low cost reduction of polysilicon requires cost reductions of raw materials, energy, labor, and capital. These conditions were carefully reviewed. The overall conclusion was that a development program should be based on the TCS-FBR process and that the experimental program should be conducted in test facilities capable of producing 10 tons of silicon granules per year.

Noda, T.↗
NASA NTRS1999

Utilizing Controlled Vibrations in a Microgravity Environment to Understand and Promote Microstructural Homogeneity During Floating-Zone Crystal Growth

It has been demonstrated in floating-zone configurations utilizing silicone oil and nitrate salts that mechanically induced vibration effectively minimizes detrimental, gravity independent, thermocapillary flow. The processing parameters leading to crystal improvement and aspects of the on-going modeling effort are discussed. Plans for applying the crystal growth technique to commercially relevant materials, e.g., silicon, as well as the value of processing in a microgravity environment are presented.

Grugel, Richard N.↗
DOE OSTI2023

Interpretable inverse-designed cavity for on-chip nonlinear photon pair generation

Inverse design is a powerful tool in wave physics for compact, high-performance devices. To date, applications in photonics have mostly been limited to linear systems and it has rarely been investigated or demonstrated in the nonlinear regime. In addition, the “black box” nature of inverse design techniques has hindered the understanding of optimized inverse-designed structures. We propose an inverse design method with interpretable results to enhance the efficiency of on-chip photon generation rate through nonlinear processes by controlling the effective phase-matching conditions. We fabricate and characterize a compact, inverse-designed device using a silicon-on-insulator platform that allows a spontaneous four-wave mixing process to generate photon pairs at a rate of 1.1 MHz with a coincidence to accidental ratio of 162. Our design method accounts for fabrication constraints and can be used for scalable quantum light sources in large-scale communication and computing applications.

42 ENGINEERING↗
NASA NTRS1993

Opto-electronic morphological processor

The opto-electronic morphological processor of the present invention is capable of receiving optical inputs and emitting optical outputs. The use of optics allows implementation of parallel input/output, thereby overcoming a major bottleneck in prior art image processing systems. The processor consists of three components, namely, detectors, morphological operators and modulators. The detectors and operators are fabricated on a silicon VLSI chip and implement the optical input and morphological operations. A layer of ferro-electric liquid crystals is integrated with a silicon chip to provide the optical modulation. The implementation of the image processing operators in electronics leads to a wide range of applications and the use of optical connections allows cascadability of these parallel opto-electronic image processing components and high speed operation. Such an opto-electronic morphological processor may be used as the pre-processing stage in an image recognition system. In one example disclosed herein, the optical input/optical output morphological processor of the invention is interfaced with a binary phase-only correlator to produce an image recognition system.

Yu, Jeffrey W.↗
NASA NTRS1990

Signatures of aging silicate dust

A self-consistent explanation for the width, strength, and position of spectral features which may be diagnostic of the structure and composition of circumstellar and interstellar silicate grains is presented based on a long series of laboratory experiments using simple oxide analogs. The ratio of the integrated absorption strength of the grains near 10 mu to that near 20 mu is shown to decrease monotonically with increased processing. This ratio may be diagnostic of the relative age of the silicate. The oxidation state of iron in the grains is directly related to both the near-IR grain opacity and enhanced absorption in the UV. The oxidation state of both iron and silicon is directly related to the rate of nucleation, growth, and processing in a circumstellar outflow, as well as to the processing history of the grain after it reaches the interstellar medium. Other diagnostic indicators of the average silicon oxidation state, degree of structural polymerization, and dispersion in the average degree of structural polymerization are discussed.

Nuth, Joseph A., III↗
NASA NTRS1995

Integrated Microreactor for Chemical and Biochemical Applications

A completely integrated microreactor was developed that allows for the processing of very small amounts of chemical solutions. The entire system comprises several pumps and valves arranged in different branches as well as a mixing unit and a reaction chamber. The streaming path of each branch contains two valves and one pump each. The pumps are driven by piezoelectric elements mounted on thin glass membranes. Each pump is about 3.5 mm x 3.5 mm x 0.7 mm. A pumping rate up to 25 microliters per hour can be achieved. The operational voltage ranges between 40 and 200 V. A volume stroke up to 1.5 millimeter is achievable from the membrane structures. The valves are designed as passive valves. Sealing is by thin metal films. The dimension of a valve unit is 0.8 x 0.8. 07 mm. The ends of the separate streaming branches are arranged to meet in one point. This point acts as the beginning of a mixer unit which contains several fork-shaped channels. The arrangement of these channels allows for the division of the whole liquid stream into partial streams and their reuniting. A homogeneous mixing of solutions and/or gases can be observed after having passed about 10 of the fork elements. A reaction chamber is arranged behind the mixing unit to support the chemical reaction of special fluids. This unit contains heating elements placed outside of the chamber. The complete system is arranged in a modular structure and is built up of silicon. It comprises three silicon wafers bonded together by applying the silicon direct bonding technology. The silicon structures are made only by wet chemical etching processes. The fluid connections to the outside are realized using standard injection needles glued into v-shaped structures on the silicon wafers. It is possible to integrate other components, like sensors or electronic circuits using silicon as the basic material.

Schwesinger, N.↗
NASA NTRS2018

Integration of Multilevel Superconducting Buried Wiring Layers with Transition-Edge Sensor Detectors for Large Scale Arrays

Lynx, one of the four mission concepts under consideration for the next Astrophysics DecadalReview, will include a microcalorimeter array consisting of more than 100,000 pixels in a compact arrangement with absorber pitch as small as 25 microns. In order to realize the desired array scale, fine-pitch multi-level superconducting wiring with high yield, compatible with rapid expansion of our hydra absorber designs, is essential. We have demonstrated a method of integrating transition edge sensor (TES) microcalorimeters with suitable multilevel buried wiring, fabricated at MIT Lincoln Laboratory using advanced tools dedicated to superconducting circuit fabrication. The TES Mo/Au bilayer is deposited on a high-quality oxide surface created by chemical-mechanical polishing, allowing tight specifications on the TES superconducting transition and link conductivity to be achieved even though the process order has been inverted. The TESs contact the top-level niobium wiring through vias etched through silicon dioxide down to the topmost wiring layer. The article discusses the overall fabrication process, as wellas the behavior of sensors with different via designs, proximity structures, and lateral sizes. An initial iteration of the integrated fabrication process indicates that microcalorimeters fabricated in this way should meet mission specifications using a Mo/Au bilayer with a reasonable critical temperature below 100 mK.

Detector↗
DOE OSTI2016

In situ mitigation of subsurface and peripheral focused ion beam damage via simultaneous pulsed laser heating

Focused helium and neon ion (He(+)/Ne(+) ) beam processing has recently been used to push resolution limits of direct-write nanoscale synthesis. The ubiquitous insertion of focused He(+) /Ne(+) beams as the next-generation nanofabrication tool-of-choice is currently limited by deleterious subsurface and peripheral damage induced by the energetic ions in the underlying substrate. The in situ mitigation of subsurface damage induced by He(+)/Ne(+) ion exposures in silicon via a synchronized infrared pulsed laser-assisted process is demonstrated. The pulsed laser assist provides highly localized in situ photothermal energy which reduces the implantation and defect concentration by greater than 90%. The laser-assisted exposure process is also shown to reduce peripheral defects in He(+) patterned graphene, which makes this process an attractive candidate for direct-write patterning of 2D materials. In conclusion, these results offer a necessary solution for the applicability of high-resolution direct-write nanoscale material processing via focused ion beams.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Greenhouse gas emissions embodied in the U.S. solar photovoltaic supply chain

Abstract Solar photovoltaic (PV) electricity is considered to be an important source of electricity generation in the quest for net-zero carbon emissions. However, the growth of solar electricity is creating both increased material demands and increased greenhouse gas (GHG) emissions from silicon and PV manufacturing (also referred to as embodied GHG emissions of solar electricity). Here we analyze the silicon and solar PV supply chain for the United States (U.S.) market and find that the embodied GHG emissions of solar PV panel materials (such as silicon), manufacture, logistics, and installation in the U.S. given the current supply chain are 36 g CO 2 e kWh −1 of solar electricity generated. Eighty-five percent of the embodied GHG emissions are from PV panel production processes in China and other Asia–Pacific countries. Moving the silicon and PV manufacturing to the U.S. would reduce the embodied GHG emissions of solar electricity by 16% from its current level, primarily because of the lower GHG emission intensity of the U.S. electrical grid and the lower GHG emissions for aluminum electrolysis in North America. Future scenario analysis shows that by 2030, with the U.S. PV domestic supply chain and its decarbonized grid electricity and aluminum production, as well as improving PV conversion efficiency, the embodied GHG emissions of solar electricity in the U.S. will be reduced to 21 g CO 2 e kWh −1 .

14 SOLAR ENERGY↗
DOE OSTI2023

Nanopinhole Passivating Contact Si Solar Cells Fabricated with Metal-Assisted Chemical Etching

Monocrystalline Si (c-Si) solar cells with passivating contacts based on doped polycrystalline Si (poly-Si) on ≈2.0 nm silicon oxide (SiO x ) require >1000 °C thermal processing to create conducting pinholes in the SiO x layer. However, this high thermal budget can induce bulk defects in the Czochralski c-Si wafers used as the cell absorber layer. We demonstrate that pinholes can instead be created using metal-assisted chemical etching on planar or textured morphologies, at room temperature. This wet process creates up to 200 nm wide conducting pinholes that are directly observed with transmission electron and atomic force microscopies. High-performance hole-selective poly-Si/SiN y /SiO x and electron-selective poly-Si/SiO x passivating contacts are fabricated and implemented in laboratory-scale solar cells. This process development significantly broadens the range of passivation layer materials, their thicknesses, and surface morphologies, which enables the design of poly-Si contacts with superior passivating quality.

14 SOLAR ENERGY↗
DOE OSTI2017

Highly Efficient and Uniform 1 cm 2 Perovskite Solar Cells with an Electrochemically Deposited NiO x Hole-Extraction Layer

Here, given that the highest certified conversion efficiency of the organic-inorganic perovskite solar cell (PSC) already exceeds 22%, which is even higher than that of the polycrystalline silicon solar cell, the significance of new scalable processes that can be utilized for preparing large-area devices and their commercialization is rapidly increasing. From this perspective, the electrodeposition method is one of the most suitable processes for preparing large-area devices because it is an already commercialized process with proven controllability and scalability. Here, a highly uniform NiO x layer prepared by electrochemical deposition is reported as an efficient hole-extraction layer of a p-i-n-type planar PSC with a large active area of >1 cm 2 . It is demonstrated that the increased surface roughness of the NiO x layer, achieved by controlling the deposition current density, facilitates the hole extraction at the interface between perovskite and NiO x , and thus increases the fill factor and the conversion efficiency. The electrochemically deposited NiO x layer also exhibits extremely uniform thickness and morphology, leading to highly efficient and uniform large-area PSCs. As a result, the p-i-n-type planar PSC with an area of 1.084 cm 2 exhibits a stable conversion efficiency of 17.0% (19.2% for 0.1 cm 2 ) without showing hysteresis effects.

14 SOLAR ENERGY↗
DOE OSTI2023

Efficient Metal–Halide Perovskite Photovoltaic Cells Deposited via Vapor Transport Deposition

Photovoltaic cells based on metal-halide perovskites have exceeded the performance of other thin film technologies and rival the performance of devices based on archetypical silicon. Attractively, the perovskite active layer can be processed via a variety of solution- and vapor-based methods. Herein, emphasis is on the use of vapor transport codeposition (VTD) to process efficient n–i–p photovoltaic cells based on methylammonium lead iodide (MAPbI 3 ). VTD utilizes a hot-walled reactor operated under moderate vacuum in the range of 0.5–10 Torr. The organic and metal-halide precursors are heated with the resulting vapor transported by a N 2 carrier gas to a cooled substrate where they condense and react to form a perovskite film. The efficiency of photovoltaic devices based on VTD-processed MAPbI 3 is found to be highest in films with excess lead iodide content, with champion devices realizing exceeding 12%.

14 SOLAR ENERGY↗
DOE OSTI2017

Experimental Research on Selective Laser Melting AlSi10Mg Alloys: Process, Densification and Performance

In this work, a set of experiments was designed to investigate the effect of process parameters on the relative density of the AlSi10Mg parts manufactured by SLM. The influence of laser scan speed v, laser power P and hatch space H, which were considered as the dominant parameters, on the powder melting and densification behavior was also studied experimentally. In addition, the laser energy density was introduced to evaluate the combined effect of the above dominant parameters, so as to control the SLM process integrally. As a result, a high relative density (> 97%) was obtained by SLM at an optimized laser energy density of 3.5-5.5 J/mm{sup 2}. Moreover, a parameter–densification map was established to visually select the optimum process parameters for the SLM-processed AlSi10Mg parts with elevated density and required mechanical properties. The results provide an important experimental guidance for obtaining AlSi10Mg components with full density and gradient functional porosity by SLM.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Advanced processing of EBSD data to distinguish the complex microstructure evolution of a Cu-Ni-Si alloy induced by fatigue

Highlights: • Microstructure investigation of the fatigue behaviour of a Cu-Ni-Si alloy • Use of ECCI and EBSD to investigate the microstructure evolution related to fatigue dislocations structures • Characterisation of local plastic accommodation through EBSD misorientation criteria - Abstract: The present work aims at identifying the evolution of the microstructure of a Cu-Ni-Si (Corson alloy) alloy after low cycle fatigue by means of advanced electron microscopy analysis techniques (SEM-ECCI, Orientation Imaging Microscopy by means of SEM-EBSD and TEM). Deep attention is paid on the material subjected to high cyclic strains where a transient cellular dislocation structure transformed into precipitate free bands. It is shown that the formation of dislocation cells leads to a high GROD and high GOSaera value and its standard deviation. However, the presence of precipitate free bands results in the low GOSarea level and its low standard deviation.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Effect of nano particle sizes on the third-order optical non-linearities and nanostructure of copolymer P3HT:PCBM thin film for organic photovoltaics

Highlights: • Active layer (P3HT:PCBM) has been deposited on substrate type by spin coating at 1000 rpm. • The device was completed by evaporating a 60 nm thick, circular gold electrodes onto the P3HT:PCBM. • Nonlinear refractive indices of the three particle sizes are found to be of the order of 10{sup −7} cm{sup 2}/W - Abstract: Organic solar cells are based on (3-hexylthiophene):[6,6]-phenyl C61-butyric acid with methyl ester Bulk Heterojunction. An inverted structure has been fabricated using nano-anatase crystalline titanium dioxide, as the electron transport layer, which was prepared on either the Indium Tin Oxide coated glass (ITO—glass), or Silicon wafer, as well as on glass substrates by the sol–gel method, at different spin speed, using the spin-coating system. The effect of thickness on the surface morphology and on the optical properties of TiO{sub 2} layer, was investigated using the Atomic Force Microscopy (AFM), X-ray diffraction, and UV–visible spectrophotometer. The samples were examined to feature currents and voltages, in the darkness and light extraction efficiency of the solar cell. The highest open-circuit voltage, V{sub oc}, and power conversion efficiency were 0.66% and 0.39%, fabricated with 90 nm, respectively. The non-linear optical properties of nano-anatase TiO{sub 2} sol–gel, were investigated at different particle sizes, using the z-scan technique.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Cadmium effect on structural properties of Cu{sub 2}Zn{sub 1-x}Cd{sub x}SnS{sub 4} quinternary alloys nanostructures

The study report novel sensing plat of extended quinternart materials, Cu{sub 2}Zn{sub 1-x}d{sub x}SnS{sub 4} quinternary alloy nanostructures were fabricated onto oxidized silicon substrate by sol-gel method and characterized were synthesized by X-ray diffraction (XRD). The XRD peaks were shifted towered the lower angle side with increasing cadmium content. The practical size average of the Cu{sub 2}Zn{sub 1-x}d{sub x}SnS{sub 4} quinternary alloy nanostructures between 34.55 to 63.30 nm.

77 NANOSCIENCE AND NANOTECHNOLOGY↗