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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,279 records · Page 71
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Simulation of radiation-defect formation processes in heterostructures with self-assembled Ge(Si)/Si(001) nanoislands under neutron irradiation

TRISQD software is developed for the computer simulation of processes in which radiation defects are formed under the corpuscular irradiation of semiconductor heterostructures with lenticular nanoinclusions of various shapes. The computer program is used to study defect-formation processes in p-i-n diodes with the i region having a built-in 20-period lattice of self-assembled Ge(Si) nanoislands formed under irradiation with high-energy neutrons. It is found that the fraction of Ge(Si) nanoislands in which point radiation defects are formed under the impact of atomic-displacement cascades is ≤3% of their total number in the lattice. More than 94% of the defects are localized in the bulk of the p, n, and i regions of the diode and in silicon layers that separate sheets of Ge(Si) nanoislands.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Tailoring Kinetics on a Topological Insulator Surface by Defect-Induced Strain: Pb Mobility on Bi 2 Te 3

Heteroepitaxial structures based on Bi2Te3-type topological insulators (TIs) exhibit exotic quantum phenomena. For optimal characterization of these phenomena, it is desirable to control the interface structure during film growth on such TIs. In this process, adatom mobility is a key factor. We demonstrate that Pb mobility on the Bi2Te3(111) surface can be modified by the engineering local strain, ε, which is induced around the point-like defects intrinsically forming in the Bi2Te3(111) thin film grown on a Si(111)-7 × 7 substrate. Scanning tunneling microscopy observations of Pb adatom and cluster distributions and first-principles density functional theory (DFT) analyses of the adsorption energy and diffusion barrier Ed of Pb adatom on Bi2Te3(111) surface show a significant influence of ε. Surprisingly, Ed reveals a cusp-like dependence on ε due to a bifurcation in the position of the stable adsorption site at the critical tensile strain εc ≈ 0.8%. This constitutes a very different strain-dependence of diffusivity from all previous studies focusing on conventional metal or semiconductor surfaces. Kinetic Monte Carlo simulations of Pb deposition, diffusion, and irreversible aggregation incorporating the DFT results reveal adatom and cluster distributions compatible with our experimental observations.

Chemistry↗
DOE OSTI2023

Advanced Thermoluminescence Spectroscopy as a Research Tool for Semiconductor and Photonic Materials: A Review and Perspective

Thermoluminescence (TL) or thermally stimulated luminescence (TSL) spectroscopy is based on liberating charge carriers from traps in the bandgap by providing enough thermal energy to overcome the potential barrier of the traps. It provides a powerful tool to measure the positions of the localized states/traps in the bandgap. Despite that, its applications in semiconductors are very limited. Herein, the basics of TL spectroscopy and the recent advances in the technique with focus on cryogenic thermally stimulated photoemission spectroscopy (C‐TSPS) which extends TL measurements to cryogenic regime and allows the detection of very low concentrations of shallow and deep localized states is discussed. One goal herein is to introduce the reader to the use of TL and C‐TSPS in the characterization of semiconductors, explaining how it can be applied and demonstrating its advantages as a powerful tool for measuring shallow donor/acceptor ionization energies in semiconductors and as a method for characterizing compensating defects. The article also discusses interesting potential applications of C‐TSPS in new research areas such as corrosion and formation of oxide layers on metal surfaces.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Crystal structures and formation mechanisms of boron-rich tungsten borides

Boron-rich tungsten borides tend to adopt mechanically unfavorable layered structures but experimentally exhibit excellent mechanical properties rivalling traditional superhard solids. Unravelling the contraindicated structure-property relationship, however, has been impeded by their structural ambiguities because of the difficulty in probing boron and atomic deficiency of these borides. Here, we study crystal structures of boron-rich tungsten borides WB 3+x and WB 2+x by neutron diffraction based on high-quality samples prepared by a high-pressure method, leading to definitive structural resolutions for both borides with unique compositions of WB 5.14 and WB 2.34 . Combined with theoretical calculations, their structural stability is revealed to be closely related to atomic deficiency, which is governed by the valence-band filling with an optimal valence-electron concentration of ~10 per cell. The presence of interstitial boron trimers at the vacant W : 2b sites in WB 5.14 alters the crystal symmetry, making the Wyckoff 2d site more favorably occupied by W, rather than the 2c site, as previously misassigned. Here, the staggered planar boron layers and wrinkled boron bonding in WB 2.34 are identified to be crucial for stabilizing its structure. These findings unveil the longstanding structural mysteries of boron-rich tungsten borides and offer powerful insights for rational design of borides by defect chemistry.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Disorder effects on the band structure of ZnGeN 2 : Role of exchange defects

The role of exchange defects on the band structure of ZnGeN 2 is investigated. Exchange defects are defined through the exchange of cations Zn and Ge starting from the ideal Pna2 1 crystal structure, which obeys the local octet rule. Each such exchange creates several nitrogen-centered tetrahedra which violate the local octet rule, although overall charge neutrality is preserved. We study several distributions of exchange defects, some with all antisites making up the exchange defect close to each other and with increasing numbers of exchange defects, and others where the two types of antisites Zn Ge and Ge Zn are kept separated from each other. We also compare the results for these models with a fully random distribution of Zn and Ge on the cation sites. We show that for a single-nearest-neighbor exchange defect, the band gap is narrowed by about 0.5 eV due to two effects: (1) the Zn Ge antisites form filled acceptor states just above and merging with the valence-band maximum (VBM) of perfect crystal ZnGeN 2 and (2) the Ge Zn antisites form a resonance in the conduction band which lowers the conduction-band minimum (CBM). When more exchange defects are created, these acceptor states broaden into bands which can lower the gap further. When tetrahedra occur surrounded completely by four Zn atoms, states even deeper in the gap are found localized all near these tetrahedra, forming a separate intermediate band. Finally, for phase-segregated Zn Ge and Ge Zn , the gap is significantly more reduced, but no separate band is found to occur. The Zn Ge acceptorlike states now form a percolating defect band which is significantly wider and hence reaches deeper into the gap. In all cases, the wave functions near the top of the new VBM remain, to some extent, localized near the Zn Ge sites. For a fully random case, the gap is even more severely reduced by almost 3 eV. The total energy of the system increases with the number of octet-rule-violating tetrahedra and the energy cost per exchange defect of order 2 eV is quite high.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Nature of native atomic defects in ZrTe 5 and their impact on the low-energy electronic structure

Over the past decades, investigations of the anomalous low-energy electronic properties of ZrTe 5 have reached a wide array of conclusions. An open question is the growth method's impact on the stoichiometry of ZrTe 5 samples, especially given the very small density of states near its chemical potential. In this work, we report on high-resolution scanning tunneling microscopy and spectroscopy measurements performed on samples grown via different methods. Using density functional theory calculations, we identify the most prevalent types of atomic defects on the surface of ZrTe 5 , namely, Te vacancies and intercalated Zr atoms. Finally, we precisely quantify their density and outline their role as ionized defects in the anomalous resistivity of this material.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Hydrogen adsorption and anomalous electronic properties of nitrogen-doped graphene

We investigate hydrogen adsorption effects on stabilities and electronic properties of nitrogen defects in graphene using first-principles electronic-structure calculations within the density-functional theory. We find that the adsorption of hydrogen atoms on the pyridine-type nitrogen defects in graphene becomes energetically favorable, whereas in the case of the substitutional nitrogen defect the hydrogen adsorption becomes unfavorable. We also find that a transition from p-type to n-type doping properties occurs by hydrogen adsorption on the pyridine-type defects, suggesting that even the carrier type is controllable in nitrogen-doped graphene.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Primary radiation damage on displacement cascades in UO 2 , ThO 2 and (U 0.5 Th 0.5 )O 2

Primary radiation damage in UO 2 , ThO 2 and (U 0.5 Th 0.5 )O 2 has been investigated as function of temperature (300 to 1500 K) using classical molecular dynamics (MD) simulations. Displacement cascades of 5 keV are used for defect production. The number of defects produced from the cascade events in UO 2 is higher than that in ThO 2 at all temperatures. Our results indicate that the defect production in (U 0.5 Th 0.5 )O 2 is different from that in the pure oxides. The number of residual defects in the mixed oxide fuel is considerably higher than in UO 2 or ThO 2 . In all three systems studied, the fraction of anion defects is much higher than that of cations, in line with higher defect energies of the U sublattice compared to the O sublattice. It is also reported that for increasing temperature peak damage increases, while residual damage decreases. Furthermore, this is indicative of the greater recombination of defects due to enhanced mobility at high temperatures. Overall, all systems studied exhibit clustering in the residual damage with interstitial clusters tending to be smaller than voids.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Dielectric screening and vacancy formation for large neutral and charged Si n H m ( n > 1500 ) nanocrystals using real-space pseudopotentials

A commonly used procedure for computing the properties of defects in crystalline materials is to consider a large supercell that includes the defect of interest. This is a straightforward technique as standard energy band codes can be used for such computations. For neutral defects, the only impediment of such an approach is to avoid defect-defect interactions between adjoining cells. However, this procedure can be complex if the defect of interest is charged as the system at large contains Coulombic divergences. Moreover, some have recently argued that the conventional definition of formation energies for charged defects cannot be reconciled with statistical mechanics. Here, we focus on an alternative approach. We consider large nanocrystals wherein a charged defect can be placed. Since the system is confined, a charged defect within the nanocrystal does not result in a Coulombic divergence. The chief impediment is computational, i.e., while no defect-defect or Coulombic divergences are present, the nanocrystal must be sufficiently large to allow the system to properly replicate a bulklike configuration. With the development of new algorithms and hardware advances, computations for systems of sufficient size to address this issue are feasible. In particular, we solve the Kohn-Sham equation in real space using pseudopotential-density-functional theory for large silicon nanocrystals, which contain thousands of atoms. Further, we focus on (i) the screening of a point charge and (ii) the formation of a charged vacancy in hydrogen-terminated silicon nanocrystals. This approach allows us to examine the role of quantum confinement in addition to exploring the bulk limit. Comparisons to other methods confirm the viability of this approach.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Role of Lithium Codoping in Enhancing the Scintillation Yield of Aluminate Garnets

The aim of this work is to clarify the scintillation-yield enhancement in Lu YAG : Pr scintillators obtained by Li codoping via integrated study of the valence state of activators, the preferential site occupancy of Li codopants, and defect structures from experimental and theoretical insights. Here, with Li codoping, the light yield and energy resolution of 10 × 10 × 10 mm 3 Lu YAG : Pr samples are improved from 156000 to 248000 photons/MeV, and 5.3 to 4.3% at 662 keV,respectively.The optical absorption spectra indicate that Li codoping does not induce conversion of stable Pr 3 + to Pr 4 + in Lu YAG : Pr single crystals. Based on the formation energies of substitutional and interstitial Li sites using density-functional-theory (DFT) calculations and the 7 Li nuclear magnetic resonance results, it is shown that the Li ions prefer to dominantly occupy the fourfold coordinated interstitial sites and fourfold coordinated Al sites. The systematic analysis of thermoluminescence glow curves, positron annihilation lifetime spectroscopies, and defect formation energies derived from DFT calculations reveals that the concentration of isolated Lu and Al vacancies as dominant acceptor defects is reduced by Li codoping, whilst the shallow Li i interstitial defects and the deep V O oxygen vacancies are introduced simultaneously. We propose that the lowering of hole trapping at defects resulting from Li codoping contributes to the scintillation-yield enhancement.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Effects of neutron irradiation of ultra-thin HfO{sub 2} films

Neutron irradiation at low fluence decreases the Pb-type and E′ defect levels in ultra-thin hafnium dioxide films because electrons can fill existing states. These electrons come from electron-hole pairs generated by neutron interactions with silicon and oxygen. Thus, a low fluence of neutrons “anneals” the sample. However, when neutron fluence increases, more neutrons collide with oxygen atoms and cause them to leave the lattice or to transmute into different atoms. This causes the E′ states to increase. As defect-state concentrations increase, leakage currents increase, but since the E′ is much lower than the Pb concentration, this is not a dominant factor.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Charge and magnetic states of Mn-, Fe-, and Co-doped monolayer MoS{sub 2}

First-principles calculations have been performed to investigate the electronic and magnetic properties of monolayer MoS{sub 2} substitutionally doped with Mn, Fe, and Co in possible charge states (q). We find that the Mn, Fe, and Co dopants substituting for a Mo atom in monolayer MoS{sub 2} (Mn@Mo, Fe@Mo, and Co@Mo) are all magnetic in their neutral and charge states except in the highest positive charge states. Mn@Mo, Fe@Mo, and Co@Mo have the same highest negative charge states of q=−2 for chemical potential of electron just below the conduction band minimum, which corresponds to the electron doping. In the q=−2 state, Mn@Mo has a much larger magnetic moment than its neutral state with the antiferromagnetic coupling between the Mn dopant and its neighboring S atoms maintained, while Fe@Mo and Co@Mo have equal or smaller magnetic moments than their neutral states. The possible charge states of Mn@Mo, Fe@Mo, and Co@Mo and the variation of the magnetic moments for different dopants and charge states are due to the change of the occupation and energy of the anti-bonding defect levels in the band gap. The rich magnetic properties of the neutral and charge states suggest possible realization of the substitutionally Mn-, Fe-, and Co-doped monolayer MoS{sub 2} as dilute magnetic semiconductors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Effect of the energy of bombarding electrons on the conductivity of n-4H-SiC (CVD) epitaxial layers

The electrical characteristics of epitaxial layers of n-4H-SiC (CVD) irradiated with 0.9 and 3.5MeV electrons are studied. It is shown that the donor removal rate becomes nearly four times higher as the energy of impinging electrons increases by a factor of 4, although the formation cross section of primary radiation defects (Frenkel pairs in the carbon sublattice) responsible for conductivity compensation of the material is almost energy independent in this range. It is assumed that the reason for the observed differences is the influence exerted by primary knocked-out atoms. First, cascade processes start to manifest themselves with increasing energy of primary knocked-out atoms. Second, the average distance between genetically related Frenkel pairs grows, and, as a consequence, the fraction of defects that do not recombine under irradiation becomes larger. The recombination radius of Frenkel pairs in the carbon sublattice is estimated and the possible charge state of the recombining components is assessed.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Geometrical defect detection for additive manufacturing with machine learning models

This study proposed a scheme based on Machine Learning (ML) models to detect geometric defects of additively manufactured objects. The ML models are trained with synthetic 3D point clouds with defects and then applied to detect defects in actual production. Using synthetic 3D point clouds rather than experimental data could save a huge amount of training time and costs associated with many prints for each design. Besides distance differences of individual points between source and target point clouds, this scheme uses a new concept called “patch” to capture macro-level information about nearby points for ML training and implementation. Numerical comparisons of prediction results on experimental data with different shapes showed that the proposed scheme outperformed the existing Z-difference method in the literature. Five ML methods (Bagging of Trees, Gradient Boosting, Random Forest, K-nearest Neighbors and Linear Supported Vector Machine) were compared under various conditions, such as different point cloud densities and defect sizes. Bagging and Random Forest were found the two best models regarding predictability; and the right patch size was found to be at 20. The proposed ML-based scheme is applicable to in-situ defect detection during additive manufacturing with the aid of a proper 3D data acquisition system.

Additive manufacturing↗
DOE OSTI2020

Enhancing Photocarrier Bulk Lifetime with Defect Engineering of Polycrystalline Passivated-Contact n-Cz Photovoltaic Devices

We study the photocarrier lifetime evolution of n-Cz Si material throughout the processing sequence for polycrystalline passivated contact devices. We show that a high temperature annealing pretreatment (known as Tabula Rasa) has a clear effect on enhancing bulk lifetimes of n-Cz Si. We further this development by integrating such defect engineering into the lower-temperature annealing of passivated contact. By applying oxidizing ambient gases during these anneals we report a photocarrier lifetime enhancement over an N 2 environment. This enhancement is exhibited in a 1-sun iV OC of 735 mV when annealed in O 2 rather than 708 mV in N 2.

14 SOLAR ENERGY↗
DOE OSTI2018

Effect of Tuning the Structure on the Optical and Magnetic Properties by Various Transition Metal Doping in ZnO/TM (TM = Fe, FeCo, Cr, and Mn) Thin Films

We have investigated in this work the physical, optical, electronic, and the magnetic behavior (Curie temperature, magnetic moment) of Zn.1-x.MxO (M = Fe 5%, Co 1%, Cr 5%, and Mn 5%), diluted magnetic semiconductors (DMSs). The samples were deposited on glass substrate by the spray pyrolysis technique, and the results of the x-ray diffraction (XRD) of the prepared substrates was used to prove the incorporation of the dopants into the ZnO lattice host; the ferromagnetic and the antiferromagnetic state competitions and their effects on the physical, magnetic, and optical properties, were investigated. The electronic structure and magnetic properties of transition metal (TM) defects, were investigated in detail, by using the Korringa–Kohn–Rostoker (KKR) method combined with the coherent potential approximation (CPA). As a result, doping by TM impurities induce the ferromagnetism with different competitions between the ferromagnetic and antiferromagnetic states, which affects the physical properties of the TM (Fe, Fe/Co, Cr, and Mn)-doped ZnO, with a Curie temperature closer to room-temperature ferromagnetic.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Radiative capture rates at deep defects from electronic structure calculations

We present a methodology to calculate radiative carrier capture coefficients at deep defects in semiconductors and insulators from first principles. Electronic structure and lattice relaxations are accurately described with hybrid density functional theory. Calculations of capture coefficients provide an additional validation of the accuracy of these functionals in dealing with localized defect states. We also discuss the validity of the Condon approximation, showing that even in the event of large lattice relaxations the approximation is accurate. We test the method on GaAs:VGa-TeAs and GaN:CN, for which reliable experiments are available, and demonstrate very good agreement with measured capture coefficients.

36 MATERIALS SCIENCE↗