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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,279 records · Page 71
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Spin-current-driven thermoelectric generation based on interfacial spin-orbit coupling

The longitudinal spin Seebeck effect (SSE) in Bi{sub 2}O{sub 3}/Cu/yttrium-iron-garnet (YIG) devices has been investigated. When an out-of-plane temperature gradient is applied to the Bi{sub 2}O{sub 3}/Cu/YIG device, a spin current is generated across the Cu/YIG interface via the SSE and then converted into electric voltage due to the spin–orbit coupling at the Bi{sub 2}O{sub 3}/Cu interface. The sign of the SSE voltage in the Bi{sub 2}O{sub 3}/Cu/YIG devices is opposite to that induced by the conventional inverse spin Hall effect in Pt/YIG devices. The SSE voltage in the Bi{sub 2}O{sub 3}/Cu/YIG devices disappears in the absence of the Bi{sub 2}O{sub 3} layer and its thermoelectric conversion efficiency is independent of the Cu thickness, indicating the important role of the Bi{sub 2}O{sub 3}/Cu interface. This result demonstrates that not only the bulk inverse spin Hall effect but also the spin–orbit coupling near the interface can be used for SSE-based thermoelectric generation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Achieving stable all-solid-state lithium-metal batteries by tuning the cathode-electrolyte interface and ionic/electronic transport within the cathode

All-solid-state batteries with sulfide electrolytes and high-nickel layered oxide cathodes attract much interest due to their high specific energy. However, their cycling performance is primarily influenced by the interface between the sulfide electrolyte and the high-Ni layered oxide particles, which requires the use of composite cathodes with high ionic and electronic conductivities to achieve a kinetically stable interface inside the cathode. Here, we apply Ti 2 O 3 particles to the high-Ni cathode LiNi 0.8 Co 0.1 Mn 0.1 O 2 (NCM811), where Ti 2 O 3 not only acts as an electronic conductor to provide a fast diffusion path for electrons in the composite cathode, but also absorbs the lattice oxygen released from NCM811 cathode during cycling, stabilizing the Li 6 PS 5 Cl/NCM811 interface and suppressing electrolyte oxidation. The as-modified cathode exhibits an initial specific capacity of 192 mAh g -1 and retains 166 mAh g -1 after 140 cycles at 0.1C rate with a good capacity retention of 86.5%. Furthermore, the composite cathode displays high rate capability even at 1C rate. By contrast, the unmodified Li 6 PS 5 Cl/NCM811 cathode shows poor cycling performance with only 130 mAh g -1 remaining after 130 cycles. This work provides a new direction for the design of cathodes for all-solid-state batteries that can deliver high specific energy with long cycle life.

25 ENERGY STORAGE↗
DOE OSTI2015

Effects of local field and inherent strain in reflectance anisotropy spectra of A{sup III}B{sup V} semiconductors with naturally oxidized surfaces

Reflectance anisotropy (RA) spectra of naturally oxidized (001) surfaces of GaAs and InAs crystals are measured for photon energies from 1.5 up to 5.5 eV. The differential high-accuracy RA spectra reveal features substantially different from those caused by either a reconstruction of clean surface or a built-in near-surface electric field. Models of atomic structure with anisotropic transition layers of excess arsenic atoms specific for GaAs(001)/oxide and InAs(001)/oxide interfaces are proposed. In conformity with these models, a general theory of reflectance anisotropy is developed for semiconductor/oxide interfaces within the Green's function technique. The theory takes into account the combined effect of local field due to interface dipoles and of intrinsic near-surface strain of the crystal. Measured RA spectra are analyzed in the model of valence-bond dipoles occupying a rectangular lattice in a multilayer medium. Comparing the measured and calculated spectra, we conclude that RA spectra of oxidized GaAs(001) and InAs(001) surfaces are simultaneously influenced by interface and near-surface anisotropies. The former is responsible for the broad-band spectral features which are associated with polarizability of the valence bonds attached to As atoms at the crystal/oxide interface. The near-surface anisotropy is due to inherent uniaxial straining the near-surface region of crystal. The effect of strain on RA spectra is experimentally and theoretically substantiated for GaAs crystal wafers undergone a uniaxial applied stress. Basically, this work results in the following. It establishes the physical nature of different levels of RA spectra observed in a majority of papers, but never analyzed. It demonstrates how the studied features of RA spectra could be applied for optical characterization of strained interfaces and atomic layers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Gate length and temperature dependence of negative differential transconductance in silicon quantum well metal-oxide-semiconductor field-effect transistors

Introducing quantum transport into silicon transistors in a manner compatible with industrial fabrication has the potential to transform the performance horizons of large scale integrated silicon devices and circuits. Explicit quantum transport as evidenced by negative differential transconductances (NDTCs) has been observed in a set of quantum well (QW) transistors fabricated using industrial silicon complementary metal-oxide-semiconductor processing. Detailed gate length and temperature dependence characteristics of the NDTCs in these devices have been measured. The QW potential was formed via lateral ion implantation doping on a commercial 45 nm technology node process line, and measurements of the transfer characteristics show NDTCs up to room temperature. Gate length dependence of NDTCs shows a correlation of the interface channel length with the number of NDTCs formed as well as with the gate voltage (V{sub G}) spacing between NDTCs. The V{sub G} spacing between multiple NDTCs suggests a quasi-parabolic QW potential profile. The temperature dependence is consistent with partial freeze-out of carrier concentration against a degenerately doped background.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Macroscopic lateral heterogeneity observed in a laterally mobile immiscible mixed polyelectrolyte-neutral polymer brush

We studied mixed poly(ethylene oxide) (PEO) and poly(2-(dimethylamino)ethyl methacrylate) (PDMAEMA) brushes. The question we attempted to answer was: when the chain grafting points are laterally mobile, how will this lateral mobility influence the structure and phase behavior of the mixed brush? Three different model mixed PEO/PDMAEMA brush systems were prepared: (1) a laterally mobile mixed brush by spreading onto the air–water interface a mixture of poly(ethylene oxide)–poly(n-butyl acrylate) (PEO–PnBA) and poly(2-(dimethylamino)ethyl methacrylate)–poly(n-butyl acrylate) (PDMAEMA–PnBA) diblock copolymers (the specific diblock copolymers used will be denoted as PEO 113 –PnBA 100 and PDMAEMA 118 –PnBA 100 , where the subscripts refer to the number-average degrees of polymerization of the individual blocks), (2) a mobility-restricted (inseparable) version of the above mixed brush prepared using a PEO–PnBA–PDMAEMA triblock copolymer (denoted as PEO 113 –PnBA 89 –PDMAEMA 120 ) having respective brush molecular weights matched with those of the diblock copolymers, and (3) a different laterally mobile mixed PEO and PDMAEMA brush prepared from a PEO 113 –PnBA 100 and PDMAEMA 200 –PnBA 103 diblock copolymer combination, which represents a further more height-mismatched mixed brush situation than described in (1). These three mixed brush systems were investigated by surface pressure–area isotherm and X-ray (XR) reflectivity measurements. These experimental data were analyzed within the theoretical framework of a continuum self-consistent field (SCF) polymer brush model. The combined experimental and theoretical results suggest that the mobile mixed brush derived using the PEO 113 –PnBA 100 and PDMAEMA 118 –PnBA 100 combination (i.e., mixed brush System #1) undergoes a lateral macroscopic phase separation at high chain grafting densities, whereas the more height-mismatched system (System #3) is only microscopically phase separated under comparable brush density conditions even though the lateral mobility of the grafted chains is unrestricted. The macroscopic phase separation observed in the laterally mobile mixed brush system is in contrast with the microphase separation behavior commonly observed in two-dimensional laterally mobile charged small molecule mixtures. Further study is needed to determine the detailed morphologies of the macro- and microphase-separated mixed PEO/PDMAEMA brushes.

Lee, Hoyoung↗
DOE OSTI2014

Band alignment of HfO{sub 2}/In{sub 0.18}Al{sub 0.82}N determined by angle-resolved x-ray photoelectron spectroscopy

The band-alignment of atomic layer deposited (ALD)-HfO{sub 2}/In{sub 0.18}Al{sub 0.82}N was studied by high resolution angle-resolved X-ray photoelectron spectroscopy measurements. The band bending near the HfO{sub 2}/In{sub 0.18}Al{sub 0.82}N interface was investigated, and the potential variation across the interface was taken into account in the band alignment calculation. It is observed that the binding energies for N 1s and Al 2p in In{sub 0.18}Al{sub 0.82}N decreases and the corresponding extracted valence band offsets increases with increasing θ (i.e., closer to the HfO{sub 2}/In{sub 0.18}Al{sub 0.82}N interface), as a result of an upward energy band bending towards the HfO{sub 2}/In{sub 0.18}Al{sub 0.82}N interface. The resultant valence band offset and the conduction band offset for the ALD-HfO{sub 2}/In{sub 0.18}Al{sub 0.82}N interface calculated was found to be 0.69 eV and 1.01 eV, respectively.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Continuum model for hydrogen pickup in zirconium alloys of LWR fuel cladding

A continuum model for calculating the time-dependent hydrogen pickup fractions in various Zirconium alloys under steam and pressured water oxidation has been developed in this paper. Using only one fitting parameter, the effective hydrogen gas partial pressure at the oxide surface, a qualitative agreement is obtained between the predicted and previously measured hydrogen pickup fractions. The calculation results therefore demonstrate that H diffusion through the dense oxide layer plays an important role in the hydrogen pickup process. Finally, the limitations and possible improvement of the model are also discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Oxidation-resistant, solution-processed plasmonic Ni nanochain-SiO{sub x} (x < 2) selective solar thermal absorbers

Metal oxidation at high temperatures has long been a challenge in cermet solar thermal absorbers, which impedes the development of atmospherically stable, high-temperature, high-performance concentrated solar power (CSP) systems. In this work, we demonstrate solution-processed Ni nanochain-SiO{sub x} (x < 2) and Ni nanochain-SiO{sub 2} selective solar thermal absorbers that exhibit a strong anti-oxidation behavior up to 600 °C in air. The thermal stability is far superior to previously reported Ni nanoparticle-Al{sub 2}O{sub 3} selective solar thermal absorbers, which readily oxidize at 450 °C. The SiO{sub x} (x < 2) and SiO{sub 2} matrices are derived from hydrogen silsesquioxane and tetraethyl orthosilicate precursors, respectively, which comprise Si-O cage-like structures and Si-O networks. Fourier transform infrared spectroscopy shows that the dissociation of Si-O cage-like structures and Si-O networks at high temperatures have enabled the formation of new bonds at the Ni/SiO{sub x} interface to passivate the surface of Ni nanoparticles and prevent oxidation. X-ray photoelectron spectroscopy and Raman spectroscopy demonstrate that the excess Si in the SiO{sub x} (x < 2) matrices reacts with Ni nanostructures to form silicides at the interfaces, which further improves the anti-oxidation properties. As a result, Ni-SiO{sub x} (x < 2) systems demonstrate better anti-oxidation performance than Ni-SiO{sub 2} systems. This oxidation-resistant Ni nanochain-SiO{sub x} (x < 2) cermet coating also exhibits excellent high-temperature optical performance, with a high solar absorptance of ∼90% and a low emittance ∼18% measured at 300 °C. These results open the door towards atmospheric stable, high temperature, high-performance solar selective absorber coatings processed by low-cost solution-chemical methods for future generations of CSP systems.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Photo current generation in RGO - CdS nanorod thin film device

Herein, we report the synthesis and characterization of reduced graphene oxide (RGO) - cadmium sulfide (CdS) nanocomposite materials. The reduction of GO, formation of CdS and decoration of CdS onto RGO sheets were done in a one- pot solvothermal process. We have observed that the PL intensity for CdS nanorods remarkably quenched after the attachment of RGO, which established the photo induced charge transformation from the CdS nanorod to RGO sheets through the RGO-CdS interface. The optoelectronic transport properties of our fabricated large area thin film device exhibits excellent photo induced charge generation under simulated solar light illumination. The photo sensitivity of the device increases linearly with the increase of illuminated light intensity. The RGO-CdS composite exhibits enhance photocatalytic dye degradation efficiency in compare to control CdS under simulated solar light illumination.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
NASA NTRS1993

Biogeochemical cycles of carbon, sulfur, and free oxygen in a microbial mat

Complete budgets for carbon and oxygen have been constructed for cyanobacterial mats dominated by Microcoleus chthonoplastes from the evaporating ponds of a salt works. We infer from the data the various sinks for O2 as well as the sources of carbon for primary production. Although seasonal variability exists, a major percentage of the O2 produced during the day did not diffuse out of the mat but was used within the mat to oxidize both organic carbon and the sulfide produced by sulfate reduction. At night, most of the O2 that diffused into the mat was used to oxidize sulfide, with O2 respiration of minor importance. During the day, the internal mat processes of sulfate reduction and O2 respiration generated as much or more inorganic carbon (DIC) for primary production as diffusion into the mat. Oxygenic photosynthesis was the most important process of carbon fixation. At night, the DIC lost from the mat was mostly from sulfate reduction. Elemental fluxes across the mat/brine interface indicated that carbon with an oxidation state of greater than zero was taken up by the mat during the day and liberated from the mat at night. Overall, carbon with an average oxidation state of near zero accumulated in the mat. Both carbon fixation and carbon oxidation rates varied with temperature by a similar amount.

Canfield, Donald E.↗
DOE OSTI2016

Highly conductive grain boundaries in copper oxide thin films

High conductivity in the off-state and low field-effect mobility compared to bulk properties is widely observed in the p-type thin-film transistors of Cu{sub 2}O, especially when processed at moderate temperature. This work presents results from in situ conductance measurements at thicknesses from sub-nm to around 250 nm with parallel X-ray photoelectron spectroscopy. An enhanced conductivity at low thickness is explained by the occurrence of Cu(II), which is segregated in the grain boundary and locally causes a conductivity similar to CuO, although the surface of the thick film has Cu{sub 2}O stoichiometry. Since grains grow with an increasing film thickness, the effect of an apparent oxygen excess is most pronounced in vicinity to the substrate interface. Electrical properties of Cu{sub 2}O grains are at least partially short-circuited by this effect. The study focuses on properties inherent to copper oxide, although interface effects cannot be ruled out. This non-destructive, bottom-up analysis reveals phenomena which are commonly not observable after device fabrication, but clearly dominate electrical properties of polycrystalline thin films.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

First principles assessment of helium trapping in Y{sub 2}TiO{sub 5} in nano-featured ferritic alloys

Nano-scale Y{sub 2}Ti{sub 2}O{sub 7} and Y{sub 2}TiO{sub 5} oxides are the major features that provide high strength and irradiation tolerance in nano-structured ferritic alloys. Here, we employ density functional theory to study helium trapping in Y{sub 2}TiO{sub 5}. The results suggest that helium is more deeply trapped in Y{sub 2}TiO{sub 5} compared to Y{sub 2}Ti{sub 2}O{sub 7}. Helium occupies open channels in Y{sub 2}TiO{sub 5}, where it weakly chemically interacts with neighboring oxygen anions, and results in less volume expansion compared to Y{sub 2}Ti{sub 2}O{sub 7}, reducing strains in the iron matrix. The corresponding helium mobility in these channels is very high. While its ultimate fate is to form oxide/matrix interface bubbles, transient deep trapping of helium in oxides plays a major role in the ability of NFA to manage helium distribution.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2011

Measuring Input Thresholds on an Existing Board

A critical PECL (positive emitter-coupled logic) interface to Xilinx interface needed to be changed on an existing flight board. The new Xilinx input interface used a CMOS (complementary metal-oxide semiconductor) type of input, and the driver could meet its thresholds typically, but not in worst-case, according to the data sheet. The previous interface had been based on comparison with an external reference, but the CMOS input is based on comparison with an internal divider from the power supply. A way to measure what the exact input threshold was for this device for 64 inputs on a flight board was needed. The measurement technique allowed an accurate measurement of the voltage required to switch a Xilinx input from high to low for each of the 64 lines, while only probing two of them. Directly driving an external voltage was considered too risky, and tests done on any other unit could not be used to qualify the flight board. The two lines directly probed gave an absolute voltage threshold calibration, while data collected on the remaining 62 lines without probing gave relative measurements that could be used to identify any outliers. The PECL interface was forced to a long-period square wave by driving a saturated square wave into the ADC (analog to digital converter). The active pull-down circuit was turned off, causing each line to rise rapidly and fall slowly according to the input s weak pull-down circuitry. The fall time shows up as a change in the pulse width of the signal ready by the Xilinx. This change in pulse width is a function of capacitance, pulldown current, and input threshold. Capacitance was known from the different trace lengths, plus a gate input capacitance, which is the same for all inputs. The pull-down current is the same for all inputs including the two that are probed directly. The data was combined, and the Excel solver tool was used to find input thresholds for the 62 lines. This was repeated over different supply voltages and temperatures to show that the interface had voltage margin under all worst case conditions. Gate input thresholds are normally measured at the manufacturer when the device is on a chip tester. A key function of this machine was duplicated on an existing flight board with no modifications to the nets to be tested, with the exception of changes in the FPGA program.

Kuperman, Igor↗
DOE OSTI2019

Development of an Electrochemical Impedance Instrument for Monitoring Corrosion Formation (Oxide and Hydride) on Cladding Materials

The objective of this work package is to develop electrochemical impedance spectroscopic (EIS) techniques for the in pile measurement of changes in cladding materials in coupling with model simulation and material characterization. This work package will involve the initial development of electrochemical sensing technologies for measuring spatial and time resolved changes in cladding chemistry. Specific attention will be paid to monitoring changes in monitor cladding corrosion including oxide and hydride formation and deformation. The planned work during this period was focused on cladding material zirconium alloy corrosion, oxide and hydride development, and to characterize samples using EIS under controlled gas atmosphere, atom probe tomography (APT), Raman Spectroscopy, and Synchrotron X-ray diffraction (XRD). The corrosion, including oxide and hydride of zirconium alloy samples, was tested in this study. The samples were treated at a gas environment containing 3% H2 (vol%) balanced with N2 gas at various temperatures (100 – 500°C) and different times (up to 60 hours) and were characterized by in situ EIS. After treatment, various characterization techniques were applied to measure the samples, including TGA, Ramen, XRD, and APT. This study found that impedance spectra can be affected significantly with (furnace/environment) temperature. Higher temperature resulted in higher overall impedance, and longer exposure time exerted similar effects. Proof of concept characterization of oxidized samples, including TGA, Raman, XRD, and APT, were accomplished on samples exposed to 700 oC gas environment containing 20% O2 and 80% N2. TGA provides observable breakaway and bulk oxide growth measurements. High-temperature, in-situ Raman provides observation of oxidation stress at the surface of the oxide. Additionally, a transition from tetragonal to monoclinic zirconia can be seen early in the oxidation experiment. Specifically, tetragonal-rich zirconia is seen at the metal/oxide interface, where a transition to monoclinic-rich zirconia is seen in the bulk of the oxide. It has also been confirmed that highly compressive residual stresses are seen near the metal/oxide interface. It is concluded that the transition from tetragonal to monoclinic zirconia is induced by massive shifts in stress as the oxide grows. APT has supplied evident differences in the distribution of zirconium and oxygen at the metal/oxide interface. On the pre-breakaway sample, the metastable Zr(O) region at the boundary is relatively thin, interfaced by Zr-rich (i.e., metal) and O-rich (i.e., ZrO2) on either side. In contrast, it has been seen on a post-breakaway sample that the Zr(O) metastable region is much greater in thickness, with evidence of four “zones” showing slightly contrasting composition between 49-54% Zr. In addition, it can be seen from the Zr-2.65Nb post-breakaway sample that secondary element concentrations are considerably different than bulk composition measurements show. Specifically, Nb concentration is much lower than expected, whereas Fe concentration is much higher than expected. These differences could play a role in each element’s contribution to oxide growth mechanisms, as well as causation for breakaway. Future work is focused on analyzing EIS spectra of hydride and its correlation with characterization features, finite element (FE) modeling of cladding materials, electrochemical sensor development, targeting cladding oxides/hydrides under thermodynamic equilibria, during transients and under irradiation.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2021

Oxidation kinetics and microstructure evolution of high Mn stainless-steel alloy in CO 2 at 700 °C

Oxidation kinetics and scale formation were examined in 21–2N Stainless Steel alloys in a CO 2 environment at 700 °C. Several characterization techniques were used to identify the morphology, crystallographic structure, and chemical composition of the oxide scale formation during exposures up to 1925 h. High manganese content played an important role in homogenous oxide scale formation of Mn 3 O 4 and MnCr 2 O 4 at the scale/gas and scale/alloy interfaces and as an FCC stabilizer in the alloy. Depletion of Mn resulted in an FCC to BCC phase transformation at the scale/alloy interface. No carburization was observed, indicating that the oxide layer is preventing carbon uptake.

36 MATERIALS SCIENCE↗
DOE OSTI2018

On visualizing material flow and precipitate evolution during probeless friction stir spot welding of an Al-Li alloy

Highlights: • Severe thermal cycle and deformation refined grains and intermetallic particles in SZ. • T{sub 1} phases fully dissolved in SZ followed by re-precipitation of GP zone and δ′ phases. • The predominant flow direction remained in spiral-like pattern during P-FSSW. • Local abrasion existed in the lap-weld interface due to flow difference, forming joining. - Abstract: The precipitate evolution and material flow visualization during probeless friction stir spot welding (P-FSSW) of an Al-Li alloy has been investigated experimentally and numerically in this work. Due to severe heat input during welding, the main strengthening phases of T{sub 1} fully dissolved in the stir zone followed by the re-precipitation of GP zone and δ′ phases, assisted with the refinement of the intermetallic particles and grains. The history of material flow was three-dimensionally visualized with a tracer, studied with X-ray tomography. The experiments and the simulation results provided a consistent interpretation of a circumferential material flow which moved inwards radially near the top surface. Upward flow in the bottom sheet improved with dwell time, causing the interface to bend. Local abrasion between the two sheets due to flow difference led to the disruption of oxide layer, and formed a connection at the interface.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Oxidation of GaSb(100) and its control studied by scanning tunneling microscopy and spectroscopy

Atomic-scale knowledge and control of oxidation of GaSb(100), which is a potential interface for energy-efficient transistors, are still incomplete, largely due to an amorphous structure of GaSb(100) oxides. We elucidate these issues with scanning-tunneling microscopy and spectroscopy. The unveiled oxidation-induced building blocks cause defect states above Fermi level around the conduction-band edge. By interconnecting the results to previous photoemission findings, we suggest that the oxidation starts with substituting second-layer Sb sites by oxygen. Adding small amount of indium on GaSb(100), resulting in a (4 × 2)-In reconstruction, before oxidation produces a previously unreported, crystalline oxidized layer of (1 × 3)-O free of gap states.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Semicoherent oxide heterointerfaces: Structure, properties, and implications

In the quest for enhanced functionality of all sorts, nanostructured materials are becoming ever more common. This is particularly true of oxide/oxide heterostructures in which the high density of interfaces has been implicated in enhanced properties and used to engineer strain in oxide composite structures. These interfaces are often characterized by a network of misfit dislocations that relieve the lattice mismatch strain between the two materials, and these dislocations themselves are often suggested as the source of either enhancements or degradation of properties. Despite the importance and pervasiveness of misfit dislocations, however, there is still much that is unknown about their structure and properties, particularly in oxide/oxide heterostructures. Here, we give a perspective on the importance of these dislocation networks and the need to interrogate their impact on functionality.

36 MATERIALS SCIENCE↗