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At least 1,279 records · Page 71

Indirect tunneling enabled spontaneous time-reversal symmetry breaking and Josephson diode effect in TiN/Al 2 ⁢O 3 /Hf 0.8 ⁢Zr 0.2 ⁢O 2 /Nb tunnel junctions

Josephson diode (JD) effect in Josephson tunnel junctions (JTJs) has attracted a great deal of attention due to its importance for developing superconducting-circuitry-based quantum technologies. Even though the preparation of high-quality JTJs by techniques employed in the semiconductor industry has been demonstrated, which was an important milestone because JTJs are the building blocks of superconducting electronics even before the quantum era, the JD effect has not been accomplished in them, nor has the highly desirable electrical control of the effect. We report here the fabrication of JTJs featuring a composite tunnel barrier of Al 2 ⁢O 3 and Hf 0.8 ⁢Zr 0.2 ⁢O 2 using complementary-metal-oxide-semiconductor compatible atomic layer deposition. These JTJs were found to show the JD effect in nominally zero magnetic fields with nonreciprocity controllable via an electric training current, yielding a surprisingly large diode efficiency. The quasiparticle tunneling, through which the Josephson coupling in a JTJ is established, was found to show theoretically expected gap features but no nonreciprocity. We attribute these observations to the simultaneous presence of positive and negative local Josephson couplings in the JTJs, with the negative Josephson coupling originating from indirect tunneling, which results in spontaneous time-reversal symmetry breaking. Finally, the double-minima washboard potential for the ensemble-averaged phase difference in the resistively and capacitively shunted junction model is shown to fully account for the experimentally observed JD effect.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Network Models of Active Degradation Mechanisms and Pathways for Service Life Prediction of Indoor and Outdoor PV Modules

ct: PV service lifetime prediction (SLP) enables accurate calculation of levelized cost of energy (LCOE), which is crucial to rationalizing PV investment and installation. However, SLP is challeging since PV reliability in the field is affected by many combined factors, including various environmental stresses and module quality. In order to map out the active degradation mechanisms and pathways that best resemble real world conditions, we introduce the framework of a study protocol and use network models fitted to data, to enable analysis and SLP of complex PV systems with multiple active degradation mechanisms. The study protocol is the experimental design, including module variants and different exposure conditions, selection of evaluation methods, time-series data acquisition and training of network models to these data. We present SLP of minimodules in the lab and PV systems in the field. For lab SLP, minimodules with 8 variants based on manufacturer, architecture, and encapsulation were prepared and aged in modified damp heat with or without full spectrum light exposure. Stepwise I-V and Suns-Voc data acquisition tracks changes in electrical properties including Rs,IV, Isc,IV, Vmp,PIV providing insights into power loss of minimodules. Network structural equation modeling (netSEM) was utilized to construct degradation pathway models that identify active degradation mechanisms and predict power loss over time. For field SLP, datastreams of Pmp values and I-V curve datastreams of two types of modules installed in three distinctly different Köppen-Geiger climate zones for 9 years were acquired. With power loss modes corresponding to uniform current loss (ΔPIsc), recombination (ΔPVoc), series resistance (ΔPRs), and current mismatch (ΔPImis) determined, the performance loss rates (PLR) were determined using PVplr. We show how to establish a study protocol framework to ensure appropriate parametric variations and valid data collection from the variants of your complex systems. Then the data-driven netSEM model fitting provides a comprehensive mapping of multiple active degradation mechanisms, and accurate service life prediction.

network model, degradation, photovoltaic, solar↗

Ambient and Initial Temperature Effects on Energy Consumption Rate Modeled in FASTSim

Ambient and initial temperatures significantly impact the energy consumption rate (ECR) of battery electric vehicles (BEVs) due to auxiliary loads and the temperature dependence of battery efficiency. This study introduces a streamlined, physics-based thermal modeling approach within the FASTSim tool that bridges the gap between oversimplified constant-load models and computationally expensive high-fidelity simulations. By employing a lumped thermal mass framework, the model captures fundamental energy balances and critical non-linear energy penalties while maintaining the computational efficiency required for expansive sensitivity studies. The simulations evaluated a compact BEV hatchback with a resistive heater over city (UDDS) and highway (HWFET) test cycles. Compared to a 22 degrees Celsius initial and ambient temperature baseline, a -7 degrees Celsius initial/ambient temperature resulted in a 221% increase in the ECR for the city cycle and a 100% increase for the highway cycle. Conversely, a 45 degrees Celsius initial / 40 degrees Celsius ambient temperature resulted in a 40% increase for UDDS and an 18% increase for HWFET. These results demonstrate that while cold conditions impose the most severe energy penalties due to resistive heating, the impact is consistently more pronounced in city driving where auxiliary loads represent a larger proportion of total energy. This lightweight yet robust framework enables researchers to rapidly quantify BEV thermal sensitivity across diverse climates without the need for high-overhead simulation environments.

33 ADVANCED PROPULSION SYSTEMS↗

Generation of shear flows induced by AE / EPM in LHD plasma

The generation of shear flows (SFs) by Alfven Eigenmodes (AEs) and energetic particle modes (EPMs) have important effects on the operation of future nuclear fusion reactors, because SFs regulate the saturation of the AEs/EPMs, the transport of EPs and thermal plasma, as well as the formation of transport barriers among other consequences. The aim of this study is the analysis of SFs generation during the saturation phase of AEs and EPMs in LHD plasma. Experiments performed in the 23rd and 24th LHD experimental campaigns are dedicated to explore the destabilization of AEs/EPMs in discharges with different heating patterns, thermal plasma and magnetic field configurations. In particular, the shots 176490 and 179697 show the destabilization of MHD bursts and energetic-ion-driven resistive interchange modes (EIC), respectively. Charge exchange spectroscopy measurements in both discharges indicate that the generation of SFs by AE/EPM is uncorrelated with the perturbation induced by the neutral beam injector (NBI). Nonlinear simulations performed using the gyro-fluid code FAR3d show the generation of zonal structures, especially SFs, induced during the saturation phase of Toroidal Alfven Eigenmodes (TAEs) triggered in the MHD burst as well as by the 1/1 EIC in the bursting phase. The simulations indicate that SFs are caused by the radial electric fields powered by energy transfers from the unstable AE/EPM towards the thermal plasma. The strongest SFs are measured during the EIC bursting phase once the 1/1 EPM overlaps with nearby resonances at the plasma periphery. Likewise, the largest SFs during the MHD burst are observed once TAEs radially overlap in the inner-middle plasma region.

AE↗

OPET Hardware (Open PV Electrical Tool Hardware) [SWR-25-42]

OPET (Open-source Photovoltaic Electrical Tool) is used for performance measurements of solar photovoltaic (PV) devices in the field under natural sunlight or in the lab under artificial light. Its primary use is in research and development of solar cells and modules, specifically in reliability and durability research of PV devices. Some features and functions include: -IV curve measurements with linear or cosine distributed measurement points -PV device active loading at open circuit voltage (Voc), short circuit current (Isc) and maximum power point (Pmp) -Bias power supply to overcome series resistance in contact wires for Isc measurements and loading -PV voltage input in five ranges from 1V to 100V -PV current input ranges -Low current version, six current ranges from 1.1mA to 340mA -High current version, six current ranges from 50mA to 15A -IO ports for I2C and SPI temperature sensor Arduino extension boards -Integrated fan control This repository contains everything relating to the hardware of the OPET device. If you are looking for the firmware or software repositories, links are below: https://github.com/NREL/opet-firmware https://github.com/NREL/opet-control

McDanold, Byron [National Renewable Energy Laborat↗

Role of mixed conducting Pr 0.1 Gd 0.1 Ce 0.8 O 1.9-δ barrier layer on the promotion of SOFC performance

The cathode activity in a solid oxide fuel cell can be promoted by introducing various catalysts to reduce its polarization resistance towards oxygen reduction, and thus improve cell performance. Here, in this work, the La 0.6 Sr 0.4 Co 0.2 Fe 0.8 O 3 (LSCF) cathode surface is modified by the infiltration of Pr 6 O 11 and the power density at 0.8 V and 750 °C is improved by 21%. Moreover, by replacing the traditional barrier layer Gd 0.2 Ce 0.8 O 1.9 with mixed conducting Pr 0.1 Gd 0.1 Ce 0.8 O 1.9 (PGCO), the power density increases by 38%. The ohmic resistance is dramatically reduced by applying the PGCO interlayer. The distribution of relaxation time was used to analyze the mechanism for which the polarization resistance was decreased, attributing to the mixed conduction nature in PrO x . An increase of power density, ~0.358 W/cm 2 (71%) at 0.8 V, is achieved with the implementation of both surface modification and buffer layer engineering.

08 HYDROGEN↗

Resistivity of Surface Steps in Bulk-Insulating Topological Insulators

Electron transport in topological insulators usually involves both topologically protected surface states and trivial electronic states in the bulk material. The surface transport is particularly interesting; however, it is also susceptible to atomic defects on the surfaces, such as vacancies, impurities, and step edges. Experimental determination of scattering effects of these surface defects requires both nanoscale spatial resolution and the ability to decipher surface transport from bulk transport. Here we directly measure the resistivity of individual surface steps in the surface dominating transport process of topological insulator Bi 2 Te 2 Se. A variable probe-spacing transport spectroscopy with a multiprobe scanning tunneling microscope is used to differentiate the surface conductance from bulk conductance, allowing the identification of a surface dominant transport regime. The technique also reveals a deviation from ideal 2D transport at atomic steps. Then, a multi-probe scanning tunneling potentiometry is employed to visualize the electrochemical potentials across individual step edges. A quantitative analysis of the potential distributions enables us to acquire a resistivity of 0.530 mΩ · cm for the one quintuple-layer atomic step. The result indicates that atomic defects, despite preserving the time-reversal symmetry, can still significantly affect the transport in topological insulators.

36 MATERIALS SCIENCE↗

Pulsed electric current joining of oxide-dispersion-strengthened austenitic steels

The solid-state joining of oxide-dispersion-strengthened (ODS) austenitic steels was achieved using a pulsed electric current joining (PECJ) process. Microstructures of the austenitic grain structures and oxide dispersions in the joint areas were characterized using electron microscopy. Negligible grain growth was observed in austenitic grain structures, while slight coarsening of oxide dispersions occurred at a short holding time. The mechanisms of the PECJ process may involve three steps that occur simultaneously, including the sintering of mechanical alloying powders in the bonding layer, formation of oxide dispersions, and bonding of the mechanical alloying powders with the base alloy. The high hardness and irradiation resistance of ODS alloys were retained in the joint areas. This research revealed the fundamental mechanisms during the PECJ process, which is beneficial for its potential applications during the advanced manufacturing of ODS alloys.

36 MATERIALS SCIENCE↗

Thermomechanical and sequential stress performance of photovoltaic backsheets

Photovoltaic backsheet technology is utilized to protect the interior components of solar modules from environmental stress as well as provide electrical insulation to the module. The growing demand for solar energy and longer module service life requirements have brought backsheet performance into focus. Despite being a protective packaging material, many backsheets have exhibited failure in the field, limiting the performance and service life of entire modules. Most backsheets consist of multiple polymeric layers laminated together using adhesives. A new backsheet, with a high performance polyamide structure, has been developed as the solution to module failure. Primarily, it contains a unique polyamide-ionomer alloy targeted at improved weather resistance. In this study, several photovoltaic industry standard backsheets, and the novel polyamide compositions of multilayered backsheets fabricated from the coextrusion process, were examined using thermomechanical analysis (TMA). The coefficient of thermal expansion (CTE) for entire backsheets and their constituent layers was used to model the thermomechanical behavior of various backsheet constructions. Subsequently, thermal cycling was performed in the TMA to examine the intrinsic thermal behavior of the backsheets. Thermal cycling in the TMA indicates the resilience and dimensional stability in the coextruded structures as opposed to the laminated structures. Lastly, results from a Module Accelerated Sequential Testing (MAST), are included to show the mechanical integrity of these backsheets after sequential exposure to stressors including damp heat, ultra-violet (UV) light radiation, and thermal cycling. The laminate backsheets deteriorated extensively after sequential exposure to these stressors, while the novel coextruded structures retained their physical properties.

14 SOLAR ENERGY↗

p-type conductivity and damage recovery in implanted GaN annealed by rapid gyrotron microwave annealing

We demonstrate p-type activation of GaN doped by Mg ion implantation, and in situ during metalorganic chemical vapor deposition through sequential short-duration gyrotron microwave heating cycles at temperatures of 1200–1350 °C. GaN is implanted with 1019 cm−3 Mg ions, capped with AlN, and annealed under 3 MPa N2 overpressure in 5 s heating cycles for less than 60 s total using a high-power gyrotron microwave heating source. Through I–V characterization, photoluminescence spectroscopy, and Raman spectroscopy, we study the evolution of electrical properties, optically active point defects, and material strain in response to implantation and annealing. For Mg-implanted samples, increasing annealing temperature is characterized by an increase in the PL substitutional Mg-related peak (UVL) relative to the shallow-donor vacancy-related peak (GL2). Through comparison of implanted and in situ doped samples, it is demonstrated that the origin of compensating VN lies primarily in implantation rather than degradation from the annealing process. Transmission line measurements and diode I–V measurements show a sheet resistance of 1083 kΩ/□ and a hole concentration of 1.23 × 1015 cm−3, respectively, in the Mg-implanted material annealed at 1350 °C. We conclude that temperature-cycled gyrotron annealing at 1350 °C decreases implant-induced compensating point defects and activates Mg to obtain selective p-type conduction.

Meyers, V. (ORCID:0000000176731553)↗

Insulator‐to‐Metal Transition and Isotropic Gigantic Magnetoresistance in Layered Magnetic Semiconductors

Magnetotransport, the response of electrical conduction to external magnetic field, acts as an important tool to reveal fundamental concepts behind exotic phenomena and plays a key role in enabling spintronic applications. Magnetotransport is generally sensitive to magnetic field orientations. In contrast, efficient and isotropic modulation of electronic transport, which is useful in technology applications such as omnidirectional sensing, is rarely seen, especially for pristine crystals. Here a strategy is proposed to realize extremely strong modulation of electron conduction by magnetic field which is independent of field direction. GdPS, a layered antiferromagnetic semiconductor with resistivity anisotropies, supports a field-driven insulator-to-metal transition with a paradoxically isotropic gigantic negative magnetoresistance insensitive to magnetic field orientations. This isotropic magnetoresistance originates from the combined effects of a near-zero spin–orbit coupling of Gd 3+ -based half-filling ƒ-electron system and the strong on-site f – d exchange coupling in Gd atoms. These results not only provide a novel material system with extraordinary magnetotransport that offers a missing block for antiferromagnet-based ultrafast and efficient spintronic devices, but also demonstrate the key ingredients for designing magnetic materials with desired transport properties for advanced functionalities.

36 MATERIALS SCIENCE↗

Bipolar Membrane Electrodialyzers as Flexible Demand Response Resources: Co-Optimization of Cost Savings and Product Formation

Bipolar membrane electro dialyzers (BPMED) are widely used for chemical production and processing, including in the emerging ocean alkalinity enhancement (OAE) industry. In this paper, we explore the potential of BPMED devices as flexible electrochemical loads within power system operations. Using a multi-objective optimization framework, we evaluate BPMED operation across 24-hour and monthly horizons to examine how dispatch strategies respond to electricity price and grid conditions. Simulation results show that altering the relative weights of the choices in the objective function strongly shape the operating patterns, with cost-focused strategies that suppress the operation during peak prices. Furthermore, we propose alternative formulations that optimize operations to achieve both cost savings and alignment with periods of lower grid-side carbon intensity (CI), as low grid-side CI is key to maximize OAE efficiency. Additionally, a detailed sensitivity analysis highlights the importance of device properties, where low area-specific resistance (ASR) of membrane and high current efficiency (CE) are observed to jointly unlock cost-effective operation. However, even modest shunt efficiency losses are observed to erode performance and decrease system value. Importantly, the analysis demonstrates that BPMED can serve as a controllable and flexible demand response resource, shifting load to support multiple grid-side objectives, including (but not limited to) renewable integration, alleviate peak demand, and provide co-benefits for system reliability. These findings underscore BPMED’s dual role as a process technology and a grid-supporting asset, pointing to promising pathways for operational optimization of multiple objectives.

Bhattacharya, Saptarshi (ORCID:0000000308902060)↗

Unconventional ferroelectricity in moiré heterostructures

Although all matter is composed of component particles, these particles can arrange themselves in various ways, giving rise to emergent phenomena that can be surprisingly rich and often cannot be understood by studying only the individual constituents. Discovering and understanding novel forms of emergence in quantum materials, especially in those where multiple degrees of freedom or energy scales are delicately balanced, is of great fundamental interest to condensed matter research. In this work, we report on the surprising observation of emergent ferroelectricity in graphene-based moiré heterostructures. Ferroelectric materials exhibit an electrically-switchable electric dipole, which is usually formed by spatial separation between the averaged centers of positive and negative charge within the unit cell. Based on this, it is difficult to imagine graphene, a material composed only of carbon atoms, exhibiting ferroelectricity. However, in this work, we indeed realize switchable ferroelectricity in Bernal-stacked bilayer graphene sandwiched between two hexagonal boron nitride (BN) layers. By introducing a moiré superlattice potential (via aligning bilayer graphene with the top and/or bottom BN crystals), we observe prominent and robust hysteretic behavior of the graphene resistance with an externally applied out-of-plane displacement field. Our systematic transport measurements reveal rich and striking response as a function of displacement field and electron filling, not previously observed in any 2D systems, and beyond the framework of conventional ferroelectrics. We further directly probe the ferroelectric polarization through a nonlocal monolayer graphene sensor. Our results suggest an unconventional, odd parity electronic ordering in the bilayer graphene/BN moiré system. This emergent moiré ferroelectricity may pave the way for ultrafast, programmable, and atomically thin carbon-based memory devices.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Retrofittable Thermal Switches for Dynamic Building Envelopes Integrated with Thermal Energy Storage: Preprint

Buildings in the United States consume about 40 quadrillion BTU of primary energy annually, which accounts for the nation's 40% of total energy use, 75% of all electricity use, and 35% of the net carbon emissions. Deploying thermal energy storage in the form of phase change material (PCM) in building envelopes is an effective method to reduce space heating/cooling loads, provide load shedding, and shift demand to periods of lower energy cost. However, the full potential of PCM-integrated envelopes can only be realized if the PCM undergoes complete phase change using free ambient heating/cooling, and the stored energy is effectively transferred between the exterior and the interior environments. Conventional thermal insulation (with a fixed thermal resistance) limits PCM utilization, particularly with the increasing emphasis on higher R-value in building envelopes, which negatively affects the energy-saving potential of a PCM-integrated envelope. In contrast, dynamic building envelopes integrated with PCMs provide the option of varying the thermal resistance based on the indoor and outdoor conditions, thereby enhancing utilization of free ambient cooling and heating to charge/discharge the PCM thermal storage, reducing the buildings' heating and cooling load, and shifting the peak energy demand. In this study, we demonstrate innovative retrofittable thermal switches in the form of the insertable plugs inside an insulation to provide variable thermal resistance depending on the operating temperature and direction of temperature gradient, thus allowing preferential directional heat flow. Notably, they are passive in nature, requiring no external power, and work solely based on the ambient temperature.

buildings↗

Metal–insulator transition tuned by oxygen vacancy migration across TiO2/VO2 interface

Abstract Oxygen defects are essential building blocks for designing functional oxides with remarkable properties, ranging from electrical and ionic conductivity to magnetism and ferroelectricity. Oxygen defects, despite being spatially localized, can profoundly alter global properties such as the crystal symmetry and electronic structure, thereby enabling emergent phenomena. In this work, we achieved tunable metal–insulator transitions (MIT) in oxide heterostructures by inducing interfacial oxygen vacancy migration. We chose the non-stoichiometric VO 2-δ as a model system due to its near room temperature MIT temperature. We found that depositing a TiO 2 capping layer on an epitaxial VO 2 thin film can effectively reduce the resistance of the insulating phase in VO 2 , yielding a significantly reduced R OFF /R ON ratio. We systematically studied the TiO 2 /VO 2 heterostructures by structural and transport measurements, X-ray photoelectron spectroscopy, and ab initio calculations and found that oxygen vacancy migration from TiO 2 to VO 2 is responsible for the suppression of the MIT. Our findings underscore the importance of the interfacial oxygen vacancy migration and redistribution in controlling the electronic structure and emergent functionality of the heterostructure, thereby providing a new approach to designing oxide heterostructures for novel ionotronics and neuromorphic-computing devices.

36 MATERIALS SCIENCE↗

Structural, magnetic and electrical transport properties of YMnAl

The intermetallic compound YMnAl, crystallizing in the cubic C-15 (MgCu 2 -type) structure, was prepared using arc-melting and annealing. Rietveld refinement of the XRD pattern yields a lattice parameter of a = 7.816(1) Å⁠. The system exhibits antiferromagnetic order with a transition temperature of approximately 38 K, along with indications of a spin-glass–like phase. The effective magnetic moment, estimated from Curie–Weiss fitting of the susceptibility versus temperature curve, is 6.06 μ B /f.u. and the Curie–Weiss temperature of −79 K confirming the antiferromagnetic nature. Isothermal magnetization measurements below and above the Néel temperature show no saturation, with a maximum magnetization of 0.09 μ B /f.u observed at an applied field of 9 T. The temperature dependence of resistivity exhibits a negative temperature coefficient, characteristic of dirty metals. Hall effect measurements indicate the absence of an anomalous Hall contribution. The Hall coefficient RH, carrier concentration n, and mobility μ estimated from R XY (H) are -1.05×10 -8 m 3 /C, 5.92×10 26 m -3 and 1.05×10 -3 m 2 /V.s, respectively. Our first-principles calculations indicate that YMnAl in the orthorhombic (Imma) structure has the lowest energy; however, the substitutional disorder occurring during experimental synthesis may favor the formation of the cubic Laves phase.

Crystallography↗

Collective Energy Transport of Excitons in Two-dimensional Materials

Electronic thermal transport and thermoelectric measurements are pursued in this project to obtain unique insights into the unusual collective energy transport behaviors in two-dimensional (2D) heterostructures. Electronic thermal transport and thermoelectric measurements are essential techniques for characterizing bulk superconductors by probing the heat-carrying quasi-particles. Thermoelectric and electronic thermal transport measurements are expanded in this work beyond bulk systems to probe interactions among electrons, holes, and phonons in 2D heterostructures. In one experiment, a microbridge platform is advanced to demonstrate field-effect resistive-thermometry measurements of the electronic thermal conductivity of graphene heterostructures. Together with first principles theoretical calculations and analytical models, the experimental results suggest that tunable electron coupling with flexural phonons provides a knob to control quantum matters in graphene heterostructures with broken reflection symmetry. In another experiment, the Seebeck coefficient (S) is measured to probe interlayer interactions in electron-hole bilayers that are predicted to give rise to the emergence of a variety of correlated states. As a measure of the entropy, the measured S reveals the signature of electric injection of interlayer excitons in transition metal dichalcogenide (TMD) structures.

36 MATERIALS SCIENCE↗

Electrochemical Healing of Dendrites in Garnet-Based Solid Electrolytes

Garnet oxides are a promising material family for solid-state batteries (SSBs). Dendrite formation in solid electrolytes critically limits the applicability of SSBs because of limiting Coulombic efficiency and power capability. In this study, the authors report operando electrochemical healing of dendrites in a garnet-based solid electrolyte (SE). Dendrites were deliberately formed at high operational current density (2 mA cm –2 ) beyond the critical current density (0.55 mA cm –2 ) of the used garnet SE. Electrochemical impedance spectroscopy and scanning electron microscopy were used to confirm dendrite growth in the SE. Dendrites were subsequently healed electrochemically via plating and stripping at 20 and 1 μA cm –2 current densities. Removal of dendrites was shown by an increase in bulk and interfacial resistance and a progressive increase in polarization during galvanostatic plating and stripping. High local current density at the dendrite tips was identified as the mechanism for preferentially removing dendrites electrochemically. The dendrite detection and healing methods discussed here are crucial for extending the life of SSBs.

25 ENERGY STORAGE↗